KR20060096177A - ｎ형 반도체 다이아몬드의 제조 방법 및 ｎ형 반도체 다이아몬드 - Google Patents

ｎ형 반도체 다이아몬드의 제조 방법 및 ｎ형 반도체 다이아몬드 Download PDF

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Publication number
KR20060096177A
KR20060096177A KR1020057004098A KR20057004098A KR20060096177A KR 20060096177 A KR20060096177 A KR 20060096177A KR 1020057004098 A KR1020057004098 A KR 1020057004098A KR 20057004098 A KR20057004098 A KR 20057004098A KR 20060096177 A KR20060096177 A KR 20060096177A
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KR
South Korea
Prior art keywords
diamond
ion implantation
ion
type semiconductor
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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KR1020057004098A
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English (en)
Korean (ko)
Inventor
아끼히꼬 남바
요시유끼 야마모또
히또시 스미야
요시끼 니시바야시
다까히로 이마이
Original Assignee
스미토모덴키고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003368198A external-priority patent/JP2005132648A/ja
Priority claimed from JP2003390035A external-priority patent/JP4474905B2/ja
Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20060096177A publication Critical patent/KR20060096177A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2044—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020057004098A 2003-10-29 2003-12-22 ｎ형 반도체 다이아몬드의 제조 방법 및 ｎ형 반도체 다이아몬드 Withdrawn KR20060096177A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00368198 2003-10-29
JP2003368198A JP2005132648A (ja) 2003-10-29 2003-10-29 ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド
JP2003390035A JP4474905B2 (ja) 2003-11-20 2003-11-20 ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド
JPJP-P-2003-00390035 2003-11-20

Publications (1)

Publication Number Publication Date
KR20060096177A true KR20060096177A (ko) 2006-09-08

Family

ID=34525472

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057004098A Withdrawn KR20060096177A (ko) 2003-10-29 2003-12-22 ｎ형 반도체 다이아몬드의 제조 방법 및 ｎ형 반도체 다이아몬드

Country Status (7)

Country Link
US (1) US20060177962A1 (https=)
EP (1) EP1713116A4 (https=)
KR (1) KR20060096177A (https=)
AU (1) AU2003289502A1 (https=)
CA (1) CA2491242A1 (https=)
TW (1) TW200514878A (https=)
WO (1) WO2005041279A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170097961A (ko) * 2016-02-19 2017-08-29 한국전자통신연구원 불순물 주입 장치 및 이를 이용한 n형 반도체 다이아몬드의 형성방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2328563C2 (ru) 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
DE102019117423A1 (de) * 2019-06-27 2020-12-31 Universität Leipzig Verfahren zur Erzeugung zumindest eines deterministischen Farbzentrums in einer Diamantschicht
CN111863608B (zh) * 2020-07-28 2023-05-19 哈尔滨工业大学 一种抗单粒子烧毁的大功率晶体管及其制作方法
CN119245743B (zh) * 2024-12-06 2025-03-07 山东大学 一种具备多信号感知功能的改性金刚石设计与制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
JPH11214321A (ja) * 1998-01-27 1999-08-06 Sumitomo Electric Ind Ltd ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置
JP3112163B2 (ja) * 1999-03-19 2000-11-27 日本電気株式会社 結晶成長方法およびその結晶体
JP3495943B2 (ja) * 1999-03-26 2004-02-09 シャープ株式会社 半導体ダイヤモンドの製造方法
JP2001064094A (ja) * 1999-08-24 2001-03-13 Sharp Corp 半導体ダイヤモンドの製造方法
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170097961A (ko) * 2016-02-19 2017-08-29 한국전자통신연구원 불순물 주입 장치 및 이를 이용한 n형 반도체 다이아몬드의 형성방법

Also Published As

Publication number Publication date
WO2005041279A1 (ja) 2005-05-06
EP1713116A4 (en) 2009-07-01
EP1713116A1 (en) 2006-10-18
US20060177962A1 (en) 2006-08-10
TW200514878A (en) 2005-05-01
TWI316565B (https=) 2009-11-01
HK1078682A1 (zh) 2006-03-17
AU2003289502A1 (en) 2005-05-11
CA2491242A1 (en) 2005-04-29

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