TWI316565B - - Google Patents

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Publication number
TWI316565B
TWI316565B TW092136851A TW92136851A TWI316565B TW I316565 B TWI316565 B TW I316565B TW 092136851 A TW092136851 A TW 092136851A TW 92136851 A TW92136851 A TW 92136851A TW I316565 B TWI316565 B TW I316565B
Authority
TW
Taiwan
Prior art keywords
nitrogen
diamond
ion implantation
lithium
ion
Prior art date
Application number
TW092136851A
Other languages
English (en)
Chinese (zh)
Other versions
TW200514878A (en
Inventor
Akihiko Namba
Yoshiyuki Yamamoto
Hitoshi Sumiya
Yoshiki Nishibayashi
Takahiro Imai
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003368198A external-priority patent/JP2005132648A/ja
Priority claimed from JP2003390035A external-priority patent/JP4474905B2/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200514878A publication Critical patent/TW200514878A/zh
Application granted granted Critical
Publication of TWI316565B publication Critical patent/TWI316565B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2044—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
TW092136851A 2003-10-29 2003-12-25 Process for producing n-type semiconductor diamond and n-type semiconductor diamond TW200514878A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003368198A JP2005132648A (ja) 2003-10-29 2003-10-29 ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド
JP2003390035A JP4474905B2 (ja) 2003-11-20 2003-11-20 ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド

Publications (2)

Publication Number Publication Date
TW200514878A TW200514878A (en) 2005-05-01
TWI316565B true TWI316565B (https=) 2009-11-01

Family

ID=34525472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136851A TW200514878A (en) 2003-10-29 2003-12-25 Process for producing n-type semiconductor diamond and n-type semiconductor diamond

Country Status (7)

Country Link
US (1) US20060177962A1 (https=)
EP (1) EP1713116A4 (https=)
KR (1) KR20060096177A (https=)
AU (1) AU2003289502A1 (https=)
CA (1) CA2491242A1 (https=)
TW (1) TW200514878A (https=)
WO (1) WO2005041279A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2328563C2 (ru) 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
KR102374639B1 (ko) * 2016-02-19 2022-03-16 한국전자통신연구원 불순물 주입 장치 및 이를 이용한 n형 반도체 다이아몬드의 형성방법
DE102019117423A1 (de) * 2019-06-27 2020-12-31 Universität Leipzig Verfahren zur Erzeugung zumindest eines deterministischen Farbzentrums in einer Diamantschicht
CN111863608B (zh) * 2020-07-28 2023-05-19 哈尔滨工业大学 一种抗单粒子烧毁的大功率晶体管及其制作方法
CN119245743B (zh) * 2024-12-06 2025-03-07 山东大学 一种具备多信号感知功能的改性金刚石设计与制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
JPH11214321A (ja) * 1998-01-27 1999-08-06 Sumitomo Electric Ind Ltd ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置
JP3112163B2 (ja) * 1999-03-19 2000-11-27 日本電気株式会社 結晶成長方法およびその結晶体
JP3495943B2 (ja) * 1999-03-26 2004-02-09 シャープ株式会社 半導体ダイヤモンドの製造方法
JP2001064094A (ja) * 1999-08-24 2001-03-13 Sharp Corp 半導体ダイヤモンドの製造方法
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法

Also Published As

Publication number Publication date
WO2005041279A1 (ja) 2005-05-06
EP1713116A4 (en) 2009-07-01
KR20060096177A (ko) 2006-09-08
EP1713116A1 (en) 2006-10-18
US20060177962A1 (en) 2006-08-10
TW200514878A (en) 2005-05-01
HK1078682A1 (zh) 2006-03-17
AU2003289502A1 (en) 2005-05-11
CA2491242A1 (en) 2005-04-29

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MM4A Annulment or lapse of patent due to non-payment of fees