KR20060080851A - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
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- KR20060080851A KR20060080851A KR1020050054832A KR20050054832A KR20060080851A KR 20060080851 A KR20060080851 A KR 20060080851A KR 1020050054832 A KR1020050054832 A KR 1020050054832A KR 20050054832 A KR20050054832 A KR 20050054832A KR 20060080851 A KR20060080851 A KR 20060080851A
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 7
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910020684 PbZr Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 57
- 239000011229 interlayer Substances 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 21
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 238000000206 photolithography Methods 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 description 18
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 101100290380 Caenorhabditis elegans cel-1 gene Proteins 0.000 description 1
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
- 유기 금속 기상 성장법에 의해 강유전체막을 형성하는 공정과,상기 강유전체막 표면의 오목부를 메우는 매립층을 형성하는 공정과,상기 매립층 상에서 에칭함으로써, 상기 강유전체막 표면의 볼록부 정상을 제거하여 상기 강유전체막 표면을 평탄화하는 공정과,상기 강유전체막 표면에 잔존하는 상기 매립층을 제거하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 1 항에 있어서,상기 매립층을 형성하는 공정에서는, 상기 강유전체막 표면의 볼록부가 상기 매립층 상에 노출되는 정도의 두께로 상기 매립층을 형성하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 1 항에 있어서,상기 매립층을 형성하는 공정에서는, 상기 강유전체막 표면의 볼록부가 상기 매립층 내에 메워지는 정도의 두께로 상기 매립층을 형성하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 매립층을 형성하는 공정에서는, 상기 강유전체막 표면에 매립 재료를 스핀 코트법에 의해 도포하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 4 항에 있어서,상기 유전체 재료는 레지스트 재료, 강유전체 재료, 또는 산화 실리콘계 재료인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 강유전체막은 PbZr1-XTiXO3막, Pb1-XLaXZr1-YTiYO3막, SrBi2(TaXNb1-X)2O9막, 또는 Bi4Ti2O12막인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 강유전체막 표면을 평탄화하는 공정에서는, 상기 매립층 상에서 이방성 에칭하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 7 항에 있어서,상기 강유전체막 표면을 평탄화하는 공정에서는, 상기 매립층 상에서 반응성 이온 에칭하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 1 항 내지 제 8 항 중 어느 한 항에 있어서,상기 강유전체막 상에 도전막을 형성하는 공정과,상기 도전막 상에 레지스트층을 형성하는 공정과,상기 레지스트층을 노광하여 현상함으로써, 패터닝하는 공정과,패터닝된 상기 레지스트층을 마스크로 하여 상기 도전막을 에칭함으로써, 패터닝하는 공정을 더 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서,상기 도전막은 IrOX막, Ir막, Ru막, RuO2막, SRO막, Pd막, 또는 이들 막의 적층막인 것을 특징으로 하는 반도체 장치의 제조 방법.
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JPJP-P-2005-00001309 | 2005-01-06 | ||
JP2005001309A JP2006190811A (ja) | 2005-01-06 | 2005-01-06 | 半導体装置の製造方法 |
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KR20060080851A true KR20060080851A (ko) | 2006-07-11 |
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WO2015131424A1 (zh) * | 2014-03-06 | 2015-09-11 | 北京大学 | 一种制备多层超细硅线条的方法 |
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JPH0632613A (ja) | 1992-07-16 | 1994-02-08 | Rohm Co Ltd | 複合酸化物薄膜の製造方法 |
JPH1117124A (ja) * | 1997-06-24 | 1999-01-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2002170938A (ja) | 2000-04-28 | 2002-06-14 | Sharp Corp | 半導体装置およびその製造方法 |
KR20010113271A (ko) * | 2000-06-19 | 2001-12-28 | 박종섭 | 상하부 전극간의 단락을 방지할 수 있는 강유전체캐패시터 형성 방법 |
US6815223B2 (en) * | 2002-11-22 | 2004-11-09 | Symetrix Corporation | Low thermal budget fabrication of ferroelectric memory using RTP |
JP2003282560A (ja) | 2002-03-26 | 2003-10-03 | Seiko Epson Corp | 強誘電体層およびその製造方法ならびに強誘電体キャパシタおよび圧電素子 |
JP4230243B2 (ja) * | 2003-02-20 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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- 2005-05-18 US US11/131,210 patent/US7160737B2/en active Active
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JP2006190811A (ja) | 2006-07-20 |
KR100728146B1 (ko) | 2007-06-13 |
US7160737B2 (en) | 2007-01-09 |
US20060148107A1 (en) | 2006-07-06 |
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