JP2006190811A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910020684 PbZr Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 51
- 239000011229 interlayer Substances 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 17
- 239000004020 conductor Substances 0.000 description 9
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
【解決手段】MOCVDにより形成した強誘電体膜32上に、低粘度の材料を塗布して埋め込み層34を形成し、次いで、全面を異方性エッチングして強誘電体膜32表面の凸部頂上を除去し、次いで、強誘電体膜32表面に残存する埋め込み層34を除去する。強誘電体膜32の表面モホロジーが改善され平坦化される。フォトリソグラフィーにより導電膜36や強誘電体膜32をパターニングする際に、露光入射光が色々な方向に反射することなく、設計通りの所望のパターンを形成することができる。
【選択図】図4
Description
本発明の第1実施形態による半導体装置の製造方法を図1乃至図8を用いて説明する。図1は本実施形態による半導体装置の構造を示す断面図であり、図2乃至図7は本実施形態による半導体装置の製造方法を示す工程断面図であり、図8は従来の半導体装置の製造方法の問題点を説明するための図である。
本実施形態による半導体装置の構造について図1を用いて説明する。
次に、本実施形態による半導体装置の製造方法について図2乃至図7を用いて説明する。
本発明の第2実施形態による半導体装置の製造方法を図9を用いて説明する。図9は本実施形態による半導体装置の製造方法を示す工程断面図である。
本発明は上記実施形態に限らず種々の変形が可能である。
12…素子分離領域
14…ウェル
16…ゲート絶縁膜
18…ゲート電極
19…絶縁膜
20…サイドウォール絶縁膜
22…ソース/ドレイン拡散層
24…トランジスタ
26…層間絶縁膜
28…シリコン酸化膜
30…下部電極
32…強誘電体膜
34…埋め込み層
36…上部電極
38…強誘電体キャパシタ
40…レジスト層
42…レジスト層
44…レジスト層
46…層間絶縁膜
50…コンタクトホール
52…導体プラグ
54a、54b…配線
Claims (10)
- 有機金属気相成長法により強誘電体膜を形成する工程と、
前記強誘電体膜表面の凹部を埋める埋め込み層を形成する工程と、
前記埋め込み層上からエッチングすることにより、前記強誘電体膜表面の凸部頂上を除去して前記強誘電体膜表面を平坦化する工程と、
前記強誘電体膜表面に残存する前記埋め込み層を除去する工程と
を有することを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記埋め込み層を形成する工程では、前記強誘電体膜表面の凸部が前記埋め込み層上に露出する程度の厚さの前記埋め込み層を形成する
ことを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記埋め込み層を形成する工程では、前記強誘電体膜表面の凸部が前記埋め込み層内に埋め込まれる程度の厚さの前記埋め込み層を形成する
ことを特徴とする半導体装置の製造方法。 - 請求項1乃至3のいずれか1項に記載の半導体装置の製造方法において、
前記埋め込み層を形成する工程では、前記強誘電体膜表面に埋め込み材料をスピンコート法により塗布する
ことを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法において、
前記誘電体材料は、レジスト材料、強誘電体材料、又は、酸化シリコン系材料であることを特徴とする半導体装置の製造方法。 - 請求項1乃至5のいずれか1項に記載の半導体装置の製造方法において、
前記強誘電体膜は、PbZr1−XTiXO3膜、Pb1−XLaXZr1−YTiYO3膜、SrBi2(TaXNb1−X)2O9膜、又は、Bi4Ti2O12膜である
ことを特徴とする半導体装置の製造方法。 - 請求項1乃至6のいずれか1項に記載の半導体装置の製造方法において、
前記強誘電体膜表面を平坦化する工程では、前記埋め込み層上から異方性エッチングする
ことを特徴とする半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記強誘電体膜表面を平坦化する工程では、前記埋め込み層上から反応性イオンエッチングする
ことを特徴とする半導体装置の製造方法。 - 請求項1乃至8のいずれか1項に記載の半導体装置の製造方法において、
前記強誘電体膜上に導電膜を形成する工程と、
前記導電膜上にレジスト層を形成する工程と、
前記レジスト層を露光し現像することによりパターニングする工程と、
パターニングされた前記レジスト層をマスクとして前記導電膜をエッチングすることによりパターニングする工程と
を更に有することを特徴とする半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記導電膜は、IrOX膜、Ir膜、Ru膜、RuO2膜、SRO膜、Pd膜、又は、これらの膜の積層膜である
ことを特徴とする半導体装置の製造方法。
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JP2005001309A JP2006190811A (ja) | 2005-01-06 | 2005-01-06 | 半導体装置の製造方法 |
US11/131,210 US7160737B2 (en) | 2005-01-06 | 2005-05-18 | Method for fabricating semiconductor device |
KR1020050054832A KR100728146B1 (ko) | 2005-01-06 | 2005-06-24 | 반도체 장치의 제조 방법 |
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JPH0632613A (ja) | 1992-07-16 | 1994-02-08 | Rohm Co Ltd | 複合酸化物薄膜の製造方法 |
JPH1117124A (ja) * | 1997-06-24 | 1999-01-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2002170938A (ja) | 2000-04-28 | 2002-06-14 | Sharp Corp | 半導体装置およびその製造方法 |
KR20010113271A (ko) * | 2000-06-19 | 2001-12-28 | 박종섭 | 상하부 전극간의 단락을 방지할 수 있는 강유전체캐패시터 형성 방법 |
US6815223B2 (en) * | 2002-11-22 | 2004-11-09 | Symetrix Corporation | Low thermal budget fabrication of ferroelectric memory using RTP |
JP2003282560A (ja) | 2002-03-26 | 2003-10-03 | Seiko Epson Corp | 強誘電体層およびその製造方法ならびに強誘電体キャパシタおよび圧電素子 |
JP4230243B2 (ja) * | 2003-02-20 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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- 2005-06-24 KR KR1020050054832A patent/KR100728146B1/ko active IP Right Grant
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KR100728146B1 (ko) | 2007-06-13 |
US20060148107A1 (en) | 2006-07-06 |
US7160737B2 (en) | 2007-01-09 |
KR20060080851A (ko) | 2006-07-11 |
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