KR20060073611A - 미세 구조체의 제조 방법 및 미세 구조체, 표시 장치 및기록 장치의 제조 방법 및 기록 장치 - Google Patents

미세 구조체의 제조 방법 및 미세 구조체, 표시 장치 및기록 장치의 제조 방법 및 기록 장치 Download PDF

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Publication number
KR20060073611A
KR20060073611A KR1020067004424A KR20067004424A KR20060073611A KR 20060073611 A KR20060073611 A KR 20060073611A KR 1020067004424 A KR1020067004424 A KR 1020067004424A KR 20067004424 A KR20067004424 A KR 20067004424A KR 20060073611 A KR20060073611 A KR 20060073611A
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KR
South Korea
Prior art keywords
convex portion
substrate
cylindrical structure
microstructure
catalyst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067004424A
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English (en)
Korean (ko)
Inventor
다람 팔 고사인
히사시 가지우라
요스께 무라까미
마사후미 아따
Original Assignee
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20060073611A publication Critical patent/KR20060073611A/ko
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
KR1020067004424A 2003-09-05 2004-08-31 미세 구조체의 제조 방법 및 미세 구조체, 표시 장치 및기록 장치의 제조 방법 및 기록 장치 Withdrawn KR20060073611A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003314106A JP4329014B2 (ja) 2003-09-05 2003-09-05 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置
JPJP-P-2003-00314106 2003-09-05

Publications (1)

Publication Number Publication Date
KR20060073611A true KR20060073611A (ko) 2006-06-28

Family

ID=34269789

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067004424A Withdrawn KR20060073611A (ko) 2003-09-05 2004-08-31 미세 구조체의 제조 방법 및 미세 구조체, 표시 장치 및기록 장치의 제조 방법 및 기록 장치

Country Status (7)

Country Link
US (1) US20080315746A1 (https=)
EP (1) EP1661851A1 (https=)
JP (1) JP4329014B2 (https=)
KR (1) KR20060073611A (https=)
CN (1) CN1845872A (https=)
TW (1) TW200526516A (https=)
WO (1) WO2005023705A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5374801B2 (ja) * 2004-08-31 2013-12-25 富士通株式会社 炭素元素からなる線状構造物質の形成体及び形成方法
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
KR101002336B1 (ko) * 2008-02-04 2010-12-20 엘지디스플레이 주식회사 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법
US8084310B2 (en) * 2008-10-23 2011-12-27 Applied Materials, Inc. Self-aligned multi-patterning for advanced critical dimension contacts
JP5740819B2 (ja) * 2010-02-22 2015-07-01 株式会社ニコン 空間光変調器の製造方法、空間光変調器、照明光発生装置および露光装置
JP5657645B2 (ja) * 2010-03-31 2015-01-21 株式会社カネカ 構造体、局在型表面プラズモン共鳴センサ用チップ、及び局在型表面プラズモン共鳴センサ、並びにこれらの製造方法
CN102324351A (zh) * 2011-09-07 2012-01-18 郑州航空工业管理学院 一种新型碳纳米管场发射冷阴极及其制造方法
US8557675B2 (en) 2011-11-28 2013-10-15 Globalfoundries Inc. Methods of patterning features in a structure using multiple sidewall image transfer technique
US8669186B2 (en) 2012-01-26 2014-03-11 Globalfoundries Inc. Methods of forming SRAM devices using sidewall image transfer techniques
JP5888685B2 (ja) * 2014-07-01 2016-03-22 国立大学法人名古屋大学 カーボンナノウォールを用いた電子デバイス
CN104900802B (zh) * 2015-04-27 2018-02-13 江苏多维科技有限公司 用于自旋电子器件钉扎层的快速热处理方法和装置
CN112233702B (zh) * 2020-10-26 2021-10-01 东北师范大学 一种水凝胶修饰的高稳定碳基全息光盘的制备方法及应用
CN115841933B (zh) * 2023-02-24 2023-04-21 四川新能源汽车创新中心有限公司 冷阴极尖锥及其制备方法、冷阴极尖锥阵列及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204034A (ja) * 1992-12-25 1994-07-22 Sony Corp 磁性素子及びその製造方法
JPH08321085A (ja) * 1995-03-23 1996-12-03 Sony Corp 極微小構造素子、その製造方法、記録方法、情報伝達方法、配線及び論理素子
EP1135792A4 (en) * 1998-09-28 2005-06-08 Xidex Corp METHOD FOR PRODUCING CARBON NANOROES AS FUNCTIONAL ELEMENTS OF MEMS COMPONENTS
US6146227A (en) * 1998-09-28 2000-11-14 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of MEMS devices
EP1072693A1 (en) * 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus
US6401526B1 (en) * 1999-12-10 2002-06-11 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotubes and methods of fabrication thereof using a liquid phase catalyst precursor
JP2003115259A (ja) * 2001-10-03 2003-04-18 Sony Corp 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、冷陰極電界電子放出表示装置及びその製造方法、並びに、薄膜のエッチング方法

Also Published As

Publication number Publication date
JP4329014B2 (ja) 2009-09-09
JP2005081465A (ja) 2005-03-31
CN1845872A (zh) 2006-10-11
TW200526516A (en) 2005-08-16
TWI293945B (https=) 2008-03-01
US20080315746A1 (en) 2008-12-25
WO2005023705A1 (ja) 2005-03-17
EP1661851A1 (en) 2006-05-31

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PA0105 International application

Patent event date: 20060303

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid