CN1845872A - 制造细微结构的方法,细微结构,显示单元,制造记录装置的方法以及记录装置 - Google Patents

制造细微结构的方法,细微结构,显示单元,制造记录装置的方法以及记录装置 Download PDF

Info

Publication number
CN1845872A
CN1845872A CNA2004800251485A CN200480025148A CN1845872A CN 1845872 A CN1845872 A CN 1845872A CN A2004800251485 A CNA2004800251485 A CN A2004800251485A CN 200480025148 A CN200480025148 A CN 200480025148A CN 1845872 A CN1845872 A CN 1845872A
Authority
CN
China
Prior art keywords
tubular structure
substrate
fine structure
projection
catalyst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004800251485A
Other languages
English (en)
Chinese (zh)
Inventor
达拉姆·P·戈塞恩
梶浦尚志
村上洋介
阿多诚文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN1845872A publication Critical patent/CN1845872A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
CNA2004800251485A 2003-09-05 2004-08-31 制造细微结构的方法,细微结构,显示单元,制造记录装置的方法以及记录装置 Pending CN1845872A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003314106A JP4329014B2 (ja) 2003-09-05 2003-09-05 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置
JP314106/2003 2003-09-05

Publications (1)

Publication Number Publication Date
CN1845872A true CN1845872A (zh) 2006-10-11

Family

ID=34269789

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800251485A Pending CN1845872A (zh) 2003-09-05 2004-08-31 制造细微结构的方法,细微结构,显示单元,制造记录装置的方法以及记录装置

Country Status (7)

Country Link
US (1) US20080315746A1 (https=)
EP (1) EP1661851A1 (https=)
JP (1) JP4329014B2 (https=)
KR (1) KR20060073611A (https=)
CN (1) CN1845872A (https=)
TW (1) TW200526516A (https=)
WO (1) WO2005023705A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324351A (zh) * 2011-09-07 2012-01-18 郑州航空工业管理学院 一种新型碳纳米管场发射冷阴极及其制造方法
CN102884414A (zh) * 2010-03-31 2013-01-16 株式会社钟化 结构体、定域型表面等离子共振传感器用芯片、及定域型表面等离子共振传感器、以及它们的制造方法
CN115841933A (zh) * 2023-02-24 2023-03-24 四川新能源汽车创新中心有限公司 冷阴极尖锥及其制备方法、冷阴极尖锥阵列及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5374801B2 (ja) * 2004-08-31 2013-12-25 富士通株式会社 炭素元素からなる線状構造物質の形成体及び形成方法
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
KR101002336B1 (ko) * 2008-02-04 2010-12-20 엘지디스플레이 주식회사 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법
US8084310B2 (en) * 2008-10-23 2011-12-27 Applied Materials, Inc. Self-aligned multi-patterning for advanced critical dimension contacts
JP5740819B2 (ja) * 2010-02-22 2015-07-01 株式会社ニコン 空間光変調器の製造方法、空間光変調器、照明光発生装置および露光装置
US8557675B2 (en) 2011-11-28 2013-10-15 Globalfoundries Inc. Methods of patterning features in a structure using multiple sidewall image transfer technique
US8669186B2 (en) 2012-01-26 2014-03-11 Globalfoundries Inc. Methods of forming SRAM devices using sidewall image transfer techniques
JP5888685B2 (ja) * 2014-07-01 2016-03-22 国立大学法人名古屋大学 カーボンナノウォールを用いた電子デバイス
CN104900802B (zh) * 2015-04-27 2018-02-13 江苏多维科技有限公司 用于自旋电子器件钉扎层的快速热处理方法和装置
CN112233702B (zh) * 2020-10-26 2021-10-01 东北师范大学 一种水凝胶修饰的高稳定碳基全息光盘的制备方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204034A (ja) * 1992-12-25 1994-07-22 Sony Corp 磁性素子及びその製造方法
JPH08321085A (ja) * 1995-03-23 1996-12-03 Sony Corp 極微小構造素子、その製造方法、記録方法、情報伝達方法、配線及び論理素子
EP1135792A4 (en) * 1998-09-28 2005-06-08 Xidex Corp METHOD FOR PRODUCING CARBON NANOROES AS FUNCTIONAL ELEMENTS OF MEMS COMPONENTS
US6146227A (en) * 1998-09-28 2000-11-14 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of MEMS devices
EP1072693A1 (en) * 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus
US6401526B1 (en) * 1999-12-10 2002-06-11 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotubes and methods of fabrication thereof using a liquid phase catalyst precursor
JP2003115259A (ja) * 2001-10-03 2003-04-18 Sony Corp 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、冷陰極電界電子放出表示装置及びその製造方法、並びに、薄膜のエッチング方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102884414A (zh) * 2010-03-31 2013-01-16 株式会社钟化 结构体、定域型表面等离子共振传感器用芯片、及定域型表面等离子共振传感器、以及它们的制造方法
CN102884414B (zh) * 2010-03-31 2016-06-29 株式会社钟化 结构体、定域型表面等离子共振传感器用芯片、及定域型表面等离子共振传感器、以及它们的制造方法
CN102324351A (zh) * 2011-09-07 2012-01-18 郑州航空工业管理学院 一种新型碳纳米管场发射冷阴极及其制造方法
CN115841933A (zh) * 2023-02-24 2023-03-24 四川新能源汽车创新中心有限公司 冷阴极尖锥及其制备方法、冷阴极尖锥阵列及其制备方法
CN115841933B (zh) * 2023-02-24 2023-04-21 四川新能源汽车创新中心有限公司 冷阴极尖锥及其制备方法、冷阴极尖锥阵列及其制备方法

Also Published As

Publication number Publication date
JP4329014B2 (ja) 2009-09-09
JP2005081465A (ja) 2005-03-31
TW200526516A (en) 2005-08-16
TWI293945B (https=) 2008-03-01
US20080315746A1 (en) 2008-12-25
WO2005023705A1 (ja) 2005-03-17
EP1661851A1 (en) 2006-05-31
KR20060073611A (ko) 2006-06-28

Similar Documents

Publication Publication Date Title
CN1150631C (zh) 量子线的制造方法
CN1845872A (zh) 制造细微结构的方法,细微结构,显示单元,制造记录装置的方法以及记录装置
CN1288500C (zh) 抗蚀剂材料和微加工方法
CN1199218C (zh) 形成场电子放射材料和场电子放射设备的方法
CN1045688C (zh) 半导体薄膜及使用这种薄膜的半导体器件的制造方法
CN1826286A (zh) 固定金属粒子的方法和采用这种固定方法制造含有金属粒子的衬底的方法、制造含有碳纳米管的衬底的方法及制造含有半导体 －晶体棒的衬底的方法
CN1608980A (zh) 极细碳纤维、以及场致发射元件的制作方法
US20100112349A1 (en) Nanomaterial With Core-Shell Structure
CN1712351A (zh) 制造碳纤维的方法及其应用
CN1148774C (zh) 场致发射型电子源及其制造方法
JP2012505816A (ja) グラフェン膜成長の制御方法
CN1604281A (zh) 电极制造方法
CN1695292A (zh) 隧道效应能量转换器
CN1665746A (zh) 含有碳纳米管的带状物质和碳纳米管的制造方法以及含有该带状物质的场发射电极及其制造方法
CN1599941A (zh) 电子发射器件及其制造方法以及使用该器件的显示装置
CN1697030A (zh) 垂直磁记录介质、其制造方法及磁存储器件
CN1147672A (zh) 磁头支承机构和其制造方法以及磁盘设备
CN1702740A (zh) 磁头
JP5245072B2 (ja) カーボンナノチューブの合成方法及びその合成装置
CN1922338A (zh) 碳系薄膜及其制造方法、以及使用该薄膜的构件
CN1723171A (zh) 制造管状碳分子的方法和管状碳分子,制造记录设备的方法和记录设备,制造场致电子发射器件的方法和场致电子发射器件 ,以及制造显示单元的方法和显示单元
US6882098B2 (en) Cold cathode electron source
CN100336112C (zh) 垂直磁存储媒体、其制造方法和磁存储装置
CN1894438A (zh) 用等离子体振子辅助化学反应形成材料膜的方法和系统
JP4409192B2 (ja) 非晶質炭素膜成形体及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20061011

C20 Patent right or utility model deemed to be abandoned or is abandoned