JP4329014B2 - 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置 - Google Patents

微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置 Download PDF

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Publication number
JP4329014B2
JP4329014B2 JP2003314106A JP2003314106A JP4329014B2 JP 4329014 B2 JP4329014 B2 JP 4329014B2 JP 2003314106 A JP2003314106 A JP 2003314106A JP 2003314106 A JP2003314106 A JP 2003314106A JP 4329014 B2 JP4329014 B2 JP 4329014B2
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JP
Japan
Prior art keywords
cylindrical structure
substrate
convex portion
catalyst
substance
Prior art date
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Expired - Fee Related
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JP2003314106A
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English (en)
Japanese (ja)
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JP2005081465A (ja
JP2005081465A5 (https=
Inventor
パル ゴサイン ダラム
尚志 梶浦
洋介 村上
誠文 阿多
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Sony Corp
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Sony Corp
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Publication date
Priority to JP2003314106A priority Critical patent/JP4329014B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to US10/570,077 priority patent/US20080315746A1/en
Priority to CNA2004800251485A priority patent/CN1845872A/zh
Priority to KR1020067004424A priority patent/KR20060073611A/ko
Priority to PCT/JP2004/012520 priority patent/WO2005023705A1/ja
Priority to EP04772476A priority patent/EP1661851A1/en
Priority to TW093126732A priority patent/TW200526516A/zh
Publication of JP2005081465A publication Critical patent/JP2005081465A/ja
Publication of JP2005081465A5 publication Critical patent/JP2005081465A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
JP2003314106A 2003-09-05 2003-09-05 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置 Expired - Fee Related JP4329014B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003314106A JP4329014B2 (ja) 2003-09-05 2003-09-05 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置
CNA2004800251485A CN1845872A (zh) 2003-09-05 2004-08-31 制造细微结构的方法,细微结构,显示单元,制造记录装置的方法以及记录装置
KR1020067004424A KR20060073611A (ko) 2003-09-05 2004-08-31 미세 구조체의 제조 방법 및 미세 구조체, 표시 장치 및기록 장치의 제조 방법 및 기록 장치
PCT/JP2004/012520 WO2005023705A1 (ja) 2003-09-05 2004-08-31 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置
US10/570,077 US20080315746A1 (en) 2003-09-05 2004-08-31 Method of Manufacturing Fine Structure, Fine Structure, Display Unit, Method of Manufacturing Recoding Device, and Recoding Device
EP04772476A EP1661851A1 (en) 2003-09-05 2004-08-31 Fine structure body-producing method, fine structure body, display device, recording device-producing method, and recording device
TW093126732A TW200526516A (en) 2003-09-05 2004-09-03 Fine structure body-producing method, fine structure body, display device, recording device-producing method, and recording device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003314106A JP4329014B2 (ja) 2003-09-05 2003-09-05 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置

Publications (3)

Publication Number Publication Date
JP2005081465A JP2005081465A (ja) 2005-03-31
JP2005081465A5 JP2005081465A5 (https=) 2006-12-07
JP4329014B2 true JP4329014B2 (ja) 2009-09-09

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Family Applications (1)

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JP2003314106A Expired - Fee Related JP4329014B2 (ja) 2003-09-05 2003-09-05 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置

Country Status (7)

Country Link
US (1) US20080315746A1 (https=)
EP (1) EP1661851A1 (https=)
JP (1) JP4329014B2 (https=)
KR (1) KR20060073611A (https=)
CN (1) CN1845872A (https=)
TW (1) TW200526516A (https=)
WO (1) WO2005023705A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5374801B2 (ja) * 2004-08-31 2013-12-25 富士通株式会社 炭素元素からなる線状構造物質の形成体及び形成方法
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
KR101002336B1 (ko) * 2008-02-04 2010-12-20 엘지디스플레이 주식회사 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법
US8084310B2 (en) * 2008-10-23 2011-12-27 Applied Materials, Inc. Self-aligned multi-patterning for advanced critical dimension contacts
JP5740819B2 (ja) * 2010-02-22 2015-07-01 株式会社ニコン 空間光変調器の製造方法、空間光変調器、照明光発生装置および露光装置
JP5657645B2 (ja) * 2010-03-31 2015-01-21 株式会社カネカ 構造体、局在型表面プラズモン共鳴センサ用チップ、及び局在型表面プラズモン共鳴センサ、並びにこれらの製造方法
CN102324351A (zh) * 2011-09-07 2012-01-18 郑州航空工业管理学院 一种新型碳纳米管场发射冷阴极及其制造方法
US8557675B2 (en) 2011-11-28 2013-10-15 Globalfoundries Inc. Methods of patterning features in a structure using multiple sidewall image transfer technique
US8669186B2 (en) 2012-01-26 2014-03-11 Globalfoundries Inc. Methods of forming SRAM devices using sidewall image transfer techniques
JP5888685B2 (ja) * 2014-07-01 2016-03-22 国立大学法人名古屋大学 カーボンナノウォールを用いた電子デバイス
CN104900802B (zh) * 2015-04-27 2018-02-13 江苏多维科技有限公司 用于自旋电子器件钉扎层的快速热处理方法和装置
CN112233702B (zh) * 2020-10-26 2021-10-01 东北师范大学 一种水凝胶修饰的高稳定碳基全息光盘的制备方法及应用
CN115841933B (zh) * 2023-02-24 2023-04-21 四川新能源汽车创新中心有限公司 冷阴极尖锥及其制备方法、冷阴极尖锥阵列及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204034A (ja) * 1992-12-25 1994-07-22 Sony Corp 磁性素子及びその製造方法
JPH08321085A (ja) * 1995-03-23 1996-12-03 Sony Corp 極微小構造素子、その製造方法、記録方法、情報伝達方法、配線及び論理素子
EP1135792A4 (en) * 1998-09-28 2005-06-08 Xidex Corp METHOD FOR PRODUCING CARBON NANOROES AS FUNCTIONAL ELEMENTS OF MEMS COMPONENTS
US6146227A (en) * 1998-09-28 2000-11-14 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of MEMS devices
EP1072693A1 (en) * 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus
US6401526B1 (en) * 1999-12-10 2002-06-11 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotubes and methods of fabrication thereof using a liquid phase catalyst precursor
JP2003115259A (ja) * 2001-10-03 2003-04-18 Sony Corp 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、冷陰極電界電子放出表示装置及びその製造方法、並びに、薄膜のエッチング方法

Also Published As

Publication number Publication date
JP2005081465A (ja) 2005-03-31
CN1845872A (zh) 2006-10-11
TW200526516A (en) 2005-08-16
TWI293945B (https=) 2008-03-01
US20080315746A1 (en) 2008-12-25
WO2005023705A1 (ja) 2005-03-17
EP1661851A1 (en) 2006-05-31
KR20060073611A (ko) 2006-06-28

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