KR20060064027A - 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 - Google Patents
실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 Download PDFInfo
- Publication number
- KR20060064027A KR20060064027A KR1020067009447A KR20067009447A KR20060064027A KR 20060064027 A KR20060064027 A KR 20060064027A KR 1020067009447 A KR1020067009447 A KR 1020067009447A KR 20067009447 A KR20067009447 A KR 20067009447A KR 20060064027 A KR20060064027 A KR 20060064027A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- silicon
- crystal
- ingot
- temperature
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
- 가열된 도가니 내의 원료 융액으로부터 단결정 잉곳의 인상을 행하는 초크랄스키법(이하, CZ법) 단결정 잉곳 제조 장치에서, 인상 중인 단결정 잉곳의 소정 개소의 냉각을 행하는 쿨러를 가열로 내에 구비한 CZ법 단결정 잉곳 제조 장치를 제어하여 단결정 잉곳의 제조 시간을 단축하는 방법으로서,상기 단결정 잉곳을 상기 원료 융액으로부터 인상한 후, 상기 쿨러와 가열이 종료한 상기 도가니를 접근시켜 단결정 잉곳의 제조 시간을 단축하는 방법.
- 제1항에 있어서,상기 단결정 잉곳은 완전 결정 부분을 포함하는 단결정 잉곳인 것을 특징으로 하는 단결정 잉곳의 제조 시간을 단축하는 방법.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-1998-00330713 | 1998-11-20 | ||
JP33071398A JP4315502B2 (ja) | 1998-11-20 | 1998-11-20 | シリコン単結晶の製造方法 |
JP07716699A JP4414012B2 (ja) | 1999-03-23 | 1999-03-23 | シリコン単結晶ウェハの熱処理方法 |
JPJP-P-1999-00077166 | 1999-03-23 | ||
JP12995799 | 1999-05-11 | ||
JPJP-P-1999-00129957 | 1999-05-11 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020017006403A Division KR100710700B1 (ko) | 1998-11-20 | 1999-11-19 | 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060064027A true KR20060064027A (ko) | 2006-06-12 |
KR100676454B1 KR100676454B1 (ko) | 2007-01-30 |
Family
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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KR1020067009447A KR100676454B1 (ko) | 1998-11-20 | 1999-11-19 | 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 |
KR1020017006403A KR100710700B1 (ko) | 1998-11-20 | 1999-11-19 | 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 |
KR1020067009446A KR100710702B1 (ko) | 1998-11-20 | 1999-11-19 | 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020017006403A KR100710700B1 (ko) | 1998-11-20 | 1999-11-19 | 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 |
KR1020067009446A KR100710702B1 (ko) | 1998-11-20 | 1999-11-19 | 실리콘 단결정의 제조 방법, 단결정 잉곳 제조 장치 및실리콘 단결정 웨이퍼의 열처리 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7141113B1 (ko) |
EP (1) | EP1158076B1 (ko) |
KR (3) | KR100676454B1 (ko) |
DE (1) | DE69937579T2 (ko) |
TW (1) | TW505710B (ko) |
WO (1) | WO2000031325A1 (ko) |
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EP1310583B1 (en) * | 2000-06-30 | 2008-10-01 | Shin-Etsu Handotai Co., Ltd | Method for manufacturing of silicon single crystal wafer |
JP4554886B2 (ja) * | 2001-01-02 | 2010-09-29 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 向上したゲート酸化物完全性を有する単結晶シリコンの製造方法 |
KR100445191B1 (ko) * | 2001-11-15 | 2004-08-21 | 주식회사 실트론 | 단결정 잉곳 냉각용 수냉관 및 이를 이용한 단결정 잉곳성장장치 |
EP1560951B1 (en) | 2002-11-12 | 2010-10-27 | MEMC Electronic Materials, Inc. | Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
CN1327041C (zh) | 2002-11-12 | 2007-07-18 | Memc电子材料有限公司 | 用于生长单晶锭的拉晶机和方法 |
KR100743821B1 (ko) * | 2003-02-25 | 2007-07-30 | 가부시키가이샤 섬코 | 실리콘 단결정 육성 방법, 실리콘 웨이퍼 제조 방법 및 soi 기판 제조 방법 |
JP4193610B2 (ja) * | 2003-06-27 | 2008-12-10 | 信越半導体株式会社 | 単結晶の製造方法 |
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JP4548306B2 (ja) | 2005-10-31 | 2010-09-22 | 株式会社Sumco | シリコン単結晶の製造方法 |
US7427325B2 (en) | 2005-12-30 | 2008-09-23 | Siltron, Inc. | Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby |
ATE522927T1 (de) * | 2006-01-20 | 2011-09-15 | Infineon Technologies Austria | Verfahren zur herstellung einer n-dotierten zone in einem halbleiterwafer und halbleiterbauelement |
TW200818327A (en) * | 2006-09-29 | 2008-04-16 | Sumco Techxiv Corp | Silicon wafer heat treatment method |
DE102007005346B4 (de) | 2007-02-02 | 2015-09-17 | Siltronic Ag | Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung |
JP5186970B2 (ja) * | 2008-03-24 | 2013-04-24 | 信越半導体株式会社 | 単結晶製造装置及びその方法 |
CN102242390B (zh) * | 2011-06-15 | 2013-09-25 | 安阳市凤凰光伏科技有限公司 | 铸造法生产类似单晶硅锭化料加热方法 |
KR101540232B1 (ko) * | 2013-09-11 | 2015-07-29 | 주식회사 엘지실트론 | 잉곳성장장치 |
DE112015002599T5 (de) * | 2014-06-02 | 2017-04-06 | Sumco Corporation | Silicium-Wafer und Verfahren zu dessen Herstellung |
JP6528178B2 (ja) | 2015-07-31 | 2019-06-12 | 株式会社Sumco | シリコン単結晶の製造方法 |
WO2018008561A1 (ja) * | 2016-07-06 | 2018-01-11 | 株式会社トクヤマ | 単結晶シリコン板状体およびその製造方法 |
JP6699620B2 (ja) * | 2017-05-26 | 2020-05-27 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP7345245B2 (ja) * | 2018-11-13 | 2023-09-15 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
JP6614380B1 (ja) * | 2019-03-20 | 2019-12-04 | 信越半導体株式会社 | 単結晶製造装置 |
CN111647940B (zh) * | 2020-08-04 | 2021-05-07 | 浙江晶科能源有限公司 | 一种单晶硅制备方法及装置 |
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-
1999
- 1999-11-18 TW TW088120126A patent/TW505710B/zh not_active IP Right Cessation
- 1999-11-19 KR KR1020067009447A patent/KR100676454B1/ko active IP Right Grant
- 1999-11-19 US US09/856,212 patent/US7141113B1/en not_active Expired - Lifetime
- 1999-11-19 KR KR1020017006403A patent/KR100710700B1/ko active IP Right Grant
- 1999-11-19 WO PCT/JP1999/006477 patent/WO2000031325A1/ja active IP Right Grant
- 1999-11-19 EP EP99972700A patent/EP1158076B1/en not_active Expired - Lifetime
- 1999-11-19 KR KR1020067009446A patent/KR100710702B1/ko active IP Right Grant
- 1999-11-19 DE DE69937579T patent/DE69937579T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100676454B1 (ko) | 2007-01-30 |
KR100710702B1 (ko) | 2007-04-24 |
EP1158076A1 (en) | 2001-11-28 |
DE69937579T2 (de) | 2008-09-25 |
TW505710B (en) | 2002-10-11 |
KR20060061407A (ko) | 2006-06-07 |
WO2000031325A1 (fr) | 2000-06-02 |
EP1158076A4 (en) | 2003-06-18 |
KR100710700B1 (ko) | 2007-04-23 |
EP1158076B1 (en) | 2007-11-14 |
KR20010101045A (ko) | 2001-11-14 |
US7141113B1 (en) | 2006-11-28 |
DE69937579D1 (de) | 2007-12-27 |
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