KR20060043811A - 도금 방법 - Google Patents

도금 방법 Download PDF

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Publication number
KR20060043811A
KR20060043811A KR1020050019919A KR20050019919A KR20060043811A KR 20060043811 A KR20060043811 A KR 20060043811A KR 1020050019919 A KR1020050019919 A KR 1020050019919A KR 20050019919 A KR20050019919 A KR 20050019919A KR 20060043811 A KR20060043811 A KR 20060043811A
Authority
KR
South Korea
Prior art keywords
plating
resist layer
negative resist
semiconductor wafer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020050019919A
Other languages
English (en)
Korean (ko)
Inventor
다카하루 야마노
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20060043811A publication Critical patent/KR20060043811A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020050019919A 2004-03-11 2005-03-10 도금 방법 Withdrawn KR20060043811A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004069421A JP3715637B2 (ja) 2004-03-11 2004-03-11 めっき方法
JPJP-P-2004-00069421 2004-03-11

Publications (1)

Publication Number Publication Date
KR20060043811A true KR20060043811A (ko) 2006-05-15

Family

ID=34918491

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050019919A Withdrawn KR20060043811A (ko) 2004-03-11 2005-03-10 도금 방법

Country Status (5)

Country Link
US (1) US7790359B2 (enExample)
JP (1) JP3715637B2 (enExample)
KR (1) KR20060043811A (enExample)
CN (1) CN100533686C (enExample)
TW (1) TW200536063A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160132140A (ko) * 2011-04-15 2016-11-17 노벨러스 시스템즈, 인코포레이티드 인터커넥트 구조물 충전 방법 및 장치
US10923340B2 (en) 2015-05-14 2021-02-16 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299960A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 半導体装置及びその製造方法
JP5247998B2 (ja) * 2006-08-11 2013-07-24 株式会社テラミクロス 半導体装置の製造方法
JP2009266995A (ja) * 2008-04-24 2009-11-12 Casio Comput Co Ltd 半導体装置の製造方法
JP5782398B2 (ja) 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
CN102707566A (zh) * 2012-05-22 2012-10-03 上海宏力半导体制造有限公司 光刻方法
JP6328582B2 (ja) * 2014-03-31 2018-05-23 株式会社荏原製作所 めっき装置、および基板ホルダの電気接点の電気抵抗を決定する方法
CN105575880B (zh) * 2014-10-09 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制作方法
CN104538287B (zh) * 2014-11-24 2017-08-11 通富微电子股份有限公司 半导体制造电镀治具密封接触光阻区域形成方法
CN106773537B (zh) * 2016-11-21 2018-06-26 中国电子科技集团公司第十一研究所 一种基片的表面光刻和湿法刻蚀方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391125B2 (ja) 1994-12-15 2003-03-31 株式会社デンソー 半導体ウエハ用メッキ治具
JP4037504B2 (ja) 1998-01-09 2008-01-23 株式会社荏原製作所 半導体ウエハのメッキ治具
JP3415089B2 (ja) * 1999-03-01 2003-06-09 住友金属鉱山株式会社 プリント配線板の製造方法
JP3430290B2 (ja) * 1999-11-26 2003-07-28 カシオ計算機株式会社 半導体装置の製造方法
JP4649792B2 (ja) 2001-07-19 2011-03-16 日本電気株式会社 半導体装置
JP2003151875A (ja) * 2001-11-09 2003-05-23 Mitsubishi Electric Corp パターンの形成方法および装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160132140A (ko) * 2011-04-15 2016-11-17 노벨러스 시스템즈, 인코포레이티드 인터커넥트 구조물 충전 방법 및 장치
US10923340B2 (en) 2015-05-14 2021-02-16 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity

Also Published As

Publication number Publication date
JP3715637B2 (ja) 2005-11-09
US20050202346A1 (en) 2005-09-15
TW200536063A (en) 2005-11-01
CN1667802A (zh) 2005-09-14
US7790359B2 (en) 2010-09-07
CN100533686C (zh) 2009-08-26
JP2005256090A (ja) 2005-09-22

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000