JP3715637B2 - めっき方法 - Google Patents

めっき方法 Download PDF

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Publication number
JP3715637B2
JP3715637B2 JP2004069421A JP2004069421A JP3715637B2 JP 3715637 B2 JP3715637 B2 JP 3715637B2 JP 2004069421 A JP2004069421 A JP 2004069421A JP 2004069421 A JP2004069421 A JP 2004069421A JP 3715637 B2 JP3715637 B2 JP 3715637B2
Authority
JP
Japan
Prior art keywords
plating
resist layer
semiconductor wafer
negative resist
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004069421A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005256090A (ja
JP2005256090A5 (enExample
Inventor
孝治 山野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2004069421A priority Critical patent/JP3715637B2/ja
Priority to US11/072,724 priority patent/US7790359B2/en
Priority to TW094106931A priority patent/TW200536063A/zh
Priority to KR1020050019919A priority patent/KR20060043811A/ko
Priority to CNB200510054563XA priority patent/CN100533686C/zh
Publication of JP2005256090A publication Critical patent/JP2005256090A/ja
Publication of JP2005256090A5 publication Critical patent/JP2005256090A5/ja
Application granted granted Critical
Publication of JP3715637B2 publication Critical patent/JP3715637B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/022Electroplating of selected surface areas using masking means
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H10P14/46
    • H10P14/47
    • H10P76/202
    • H10W20/063

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004069421A 2004-03-11 2004-03-11 めっき方法 Expired - Fee Related JP3715637B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004069421A JP3715637B2 (ja) 2004-03-11 2004-03-11 めっき方法
US11/072,724 US7790359B2 (en) 2004-03-11 2005-03-04 Plating method
TW094106931A TW200536063A (en) 2004-03-11 2005-03-08 Plating method
KR1020050019919A KR20060043811A (ko) 2004-03-11 2005-03-10 도금 방법
CNB200510054563XA CN100533686C (zh) 2004-03-11 2005-03-11 电镀方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004069421A JP3715637B2 (ja) 2004-03-11 2004-03-11 めっき方法

Publications (3)

Publication Number Publication Date
JP2005256090A JP2005256090A (ja) 2005-09-22
JP2005256090A5 JP2005256090A5 (enExample) 2005-11-04
JP3715637B2 true JP3715637B2 (ja) 2005-11-09

Family

ID=34918491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004069421A Expired - Fee Related JP3715637B2 (ja) 2004-03-11 2004-03-11 めっき方法

Country Status (5)

Country Link
US (1) US7790359B2 (enExample)
JP (1) JP3715637B2 (enExample)
KR (1) KR20060043811A (enExample)
CN (1) CN100533686C (enExample)
TW (1) TW200536063A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299960A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 半導体装置及びその製造方法
JP5247998B2 (ja) * 2006-08-11 2013-07-24 株式会社テラミクロス 半導体装置の製造方法
JP2009266995A (ja) * 2008-04-24 2009-11-12 Casio Comput Co Ltd 半導体装置の製造方法
US8575028B2 (en) * 2011-04-15 2013-11-05 Novellus Systems, Inc. Method and apparatus for filling interconnect structures
JP5782398B2 (ja) 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
CN102707566A (zh) * 2012-05-22 2012-10-03 上海宏力半导体制造有限公司 光刻方法
JP6328582B2 (ja) * 2014-03-31 2018-05-23 株式会社荏原製作所 めっき装置、および基板ホルダの電気接点の電気抵抗を決定する方法
CN105575880B (zh) * 2014-10-09 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制作方法
CN104538287B (zh) * 2014-11-24 2017-08-11 通富微电子股份有限公司 半导体制造电镀治具密封接触光阻区域形成方法
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
CN106773537B (zh) * 2016-11-21 2018-06-26 中国电子科技集团公司第十一研究所 一种基片的表面光刻和湿法刻蚀方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391125B2 (ja) 1994-12-15 2003-03-31 株式会社デンソー 半導体ウエハ用メッキ治具
JP4037504B2 (ja) 1998-01-09 2008-01-23 株式会社荏原製作所 半導体ウエハのメッキ治具
JP3415089B2 (ja) * 1999-03-01 2003-06-09 住友金属鉱山株式会社 プリント配線板の製造方法
JP3430290B2 (ja) * 1999-11-26 2003-07-28 カシオ計算機株式会社 半導体装置の製造方法
JP4649792B2 (ja) 2001-07-19 2011-03-16 日本電気株式会社 半導体装置
JP2003151875A (ja) * 2001-11-09 2003-05-23 Mitsubishi Electric Corp パターンの形成方法および装置の製造方法

Also Published As

Publication number Publication date
US7790359B2 (en) 2010-09-07
CN1667802A (zh) 2005-09-14
TW200536063A (en) 2005-11-01
JP2005256090A (ja) 2005-09-22
US20050202346A1 (en) 2005-09-15
CN100533686C (zh) 2009-08-26
KR20060043811A (ko) 2006-05-15

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