KR20060041794A - 세정용 조성물, 반도체 기판의 세정 방법 및 반도체장치의 제조 방법 - Google Patents
세정용 조성물, 반도체 기판의 세정 방법 및 반도체장치의 제조 방법 Download PDFInfo
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- KR20060041794A KR20060041794A KR1020050011102A KR20050011102A KR20060041794A KR 20060041794 A KR20060041794 A KR 20060041794A KR 1020050011102 A KR1020050011102 A KR 1020050011102A KR 20050011102 A KR20050011102 A KR 20050011102A KR 20060041794 A KR20060041794 A KR 20060041794A
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- South Korea
- Prior art keywords
- cleaning
- acid
- mass
- semiconductor substrate
- mechanical polishing
- Prior art date
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- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
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- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- HSJXWMZKBLUOLQ-UHFFFAOYSA-M potassium;2-dodecylbenzenesulfonate Chemical compound [K+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HSJXWMZKBLUOLQ-UHFFFAOYSA-M 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
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- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
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- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (7)
- 가교 구조를 갖는 유기 중합체 입자 (A) 및 계면활성제 (B)를 함유하는 것을 특징으로 하는 화학 기계 연마 후에 사용하기 위한 세정용 조성물.
- 제1항에 있어서, 가교 구조를 갖는 유기 중합체 입자 (A)가 카르복실기, 수산기, 아미노기, 술폰산기 및 -N+R3 (여기서, R은 수소 원자 또는 탄소수 1 내지 4의 알킬기를 나타냄)으로 이루어지는 군으로부터 선택되는 1종 이상의 관능기를 갖는 것을 특징으로 하는 세정용 조성물.
- 제1항에 있어서, 가교 구조를 갖는 유기 중합체 입자 (A)의 평균 분산 입경이 120 내지 500 nm인 것을 특징으로 하는 세정용 조성물.
- 제1항에 있어서, 가교 구조를 갖는 유기 중합체 입자 (A)가 카르복실기 함유 불포화 단량체 (a1)과, 다관능성 단량체 (a2)와, 상기 단량체 (a1) 및 (a2) 이외의 불포화 단량체 (a3)과의 공중합체를 포함하는 입자인 것을 특징으로 하는 세정용 조성물.
- 제1항 내지 제4항 중 어느 한 항에 기재된 세정용 조성물을 사용하여 화학 기계 연마 후의 반도체 기판을 세정하는 것을 특징으로 하는 반도체 기판의 세정 방법.
- 제5항에 있어서, 상기 세정이 정반상 세정, 브러시 스크럽 세정 및 롤 세정으로 이루어지는 군으로부터 선택되는 1종 이상의 세정인 것을 특징으로 하는 세정 방법.
- 반도체 기판을 화학 기계 연마하는 공정과, 제5항에 기재된 세정 방법에 의해 상기 화학 기계 연마 후의 반도체 기판을 세정하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP2004033158 | 2004-02-10 | ||
JPJP-P-2004-00033158 | 2004-02-10 |
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KR20060041794A true KR20060041794A (ko) | 2006-05-12 |
KR100775199B1 KR100775199B1 (ko) | 2007-11-12 |
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KR1020050011102A KR100775199B1 (ko) | 2004-02-10 | 2005-02-07 | 세정용 조성물, 반도체 기판의 세정 방법 및 반도체장치의 제조 방법 |
KR1020070085661A KR20070091095A (ko) | 2004-02-10 | 2007-08-24 | 세정용 조성물, 반도체 기판의 세정 방법 및 반도체 장치의제조 방법 |
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KR1020070085661A KR20070091095A (ko) | 2004-02-10 | 2007-08-24 | 세정용 조성물, 반도체 기판의 세정 방법 및 반도체 장치의제조 방법 |
Country Status (5)
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US (1) | US7498294B2 (ko) |
EP (1) | EP1569267A1 (ko) |
KR (2) | KR100775199B1 (ko) |
CN (1) | CN1654617A (ko) |
TW (1) | TWI262552B (ko) |
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EP1211024A3 (en) * | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
US20020173243A1 (en) * | 2001-04-05 | 2002-11-21 | Costas Wesley D. | Polishing composition having organic polymer particles |
DE60233496D1 (de) * | 2001-07-11 | 2009-10-08 | Procter & Gamble | Verfahren zur oberflächenreinigung mittels eines dispergierten polymers |
JP3692109B2 (ja) | 2002-10-24 | 2005-09-07 | 株式会社東芝 | 半導体装置の製造方法 |
US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
-
2005
- 2005-02-03 CN CNA2005100016782A patent/CN1654617A/zh active Pending
- 2005-02-05 TW TW094103983A patent/TWI262552B/zh active
- 2005-02-07 KR KR1020050011102A patent/KR100775199B1/ko active IP Right Grant
- 2005-02-09 US US11/052,910 patent/US7498294B2/en active Active
- 2005-02-09 EP EP05002697A patent/EP1569267A1/en not_active Withdrawn
-
2007
- 2007-08-24 KR KR1020070085661A patent/KR20070091095A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170126783A (ko) * | 2016-05-10 | 2017-11-20 | 제이에스알 가부시끼가이샤 | 반도체 처리용 조성물 및 처리 방법 |
Also Published As
Publication number | Publication date |
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KR20070091095A (ko) | 2007-09-07 |
US7498294B2 (en) | 2009-03-03 |
CN1654617A (zh) | 2005-08-17 |
TW200527519A (en) | 2005-08-16 |
KR100775199B1 (ko) | 2007-11-12 |
TWI262552B (en) | 2006-09-21 |
US20050176606A1 (en) | 2005-08-11 |
EP1569267A1 (en) | 2005-08-31 |
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