KR20060028315A - 넓은 머리를 갖는 게이트 및 그 제조방법 - Google Patents
넓은 머리를 갖는 게이트 및 그 제조방법 Download PDFInfo
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- KR20060028315A KR20060028315A KR1020040077420A KR20040077420A KR20060028315A KR 20060028315 A KR20060028315 A KR 20060028315A KR 1020040077420 A KR1020040077420 A KR 1020040077420A KR 20040077420 A KR20040077420 A KR 20040077420A KR 20060028315 A KR20060028315 A KR 20060028315A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 9
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- CRWSWMKELFKJMC-UHFFFAOYSA-N CC.F.F.F.F.F.F Chemical compound CC.F.F.F.F.F.F CRWSWMKELFKJMC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000001153 fluoro group Chemical class F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (3)
- 초고주파 반도체 소자의 게이트에 있어서,게이트 다리 패턴용 유전체(14)에 게이트 머리를 지지하는 지지용 축(21)을 형성하여 게이트 다리를 중심으로 양쪽으로 게이트 머리를 받침으로써 게이트 머리가 지지되는 것을 특징으로 하는 넓은 머리를 갖는 게이트.
- 에피층(12)의 형성된 반도체 기판(11) 위에 초고주파 반도체 소자의 소스 전극 및 드레인 전극용 오믹 금속층(13)을 형성하는 제 1단계;유전체(14) 적층 후 식각 공정을 이용하여 게이트 다리 패턴(15)을 형성하는 제 2단계;3층 구조의 선택도가 다른 양성 레지스트(16)(17)(18)를 도포하는 제 3단계;1차 노광 후 현상 공정으로 게이트 머리 패턴을 형성하는 제 4단계;2차 노광 및 현상 과정을 통하여 게이트 머리 지지용 축 패턴(19)을 형성하고 게이트 다리 패턴 부근의 레지스트를 제거하는 제 5단계;게이트 금속(20) 및 지지용 축(21) 금속 증착 후 레지스트를 제거하는 제 6단계로 이루어진 것을 특징으로 하는 넓은 머리를 갖는 게이트의 제조방법.
- 제 2 항에 있어서, 상기 제 4단계의 지지용 축 패턴 형성에 있어서, 게이트 다리를 중심으로 양옆으로 동일한 게이트 다리 패턴을 사용하는 것을 특징으로 하 는 넓은 머리를 갖는 게이트의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040077420A KR100703998B1 (ko) | 2004-09-24 | 2004-09-24 | 넓은 머리를 갖는 게이트의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040077420A KR100703998B1 (ko) | 2004-09-24 | 2004-09-24 | 넓은 머리를 갖는 게이트의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060028315A true KR20060028315A (ko) | 2006-03-29 |
KR100703998B1 KR100703998B1 (ko) | 2007-04-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040077420A KR100703998B1 (ko) | 2004-09-24 | 2004-09-24 | 넓은 머리를 갖는 게이트의 제조방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100703998B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101736270B1 (ko) | 2014-02-14 | 2017-05-17 | 한국전자통신연구원 | 안정화된 게이트 구조를 갖는 반도체 소자 및 그의 제조 방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100274153B1 (ko) * | 1997-12-22 | 2000-12-15 | 정선종 | 지지대가 있는 미세한 티-형 게이트 제작방법 |
JP3168970B2 (ja) * | 1998-01-20 | 2001-05-21 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100480592B1 (ko) * | 1998-11-13 | 2005-06-08 | 삼성전자주식회사 | T자형 게이트를 갖는 모스 트랜지스터 및 그 제조방법 |
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- 2004-09-24 KR KR1020040077420A patent/KR100703998B1/ko active IP Right Grant
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KR100703998B1 (ko) | 2007-04-04 |
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