KR20060013386A - 좁은 갭 용량성 커플링된 반응기의 ｒｆ 펄싱 - Google Patents

좁은 갭 용량성 커플링된 반응기의 ｒｆ 펄싱 Download PDF

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Publication number
KR20060013386A
KR20060013386A KR1020057021083A KR20057021083A KR20060013386A KR 20060013386 A KR20060013386 A KR 20060013386A KR 1020057021083 A KR1020057021083 A KR 1020057021083A KR 20057021083 A KR20057021083 A KR 20057021083A KR 20060013386 A KR20060013386 A KR 20060013386A
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KR
South Korea
Prior art keywords
radio frequency
electrode
frequency power
khz
process chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057021083A
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English (en)
Korean (ko)
Inventor
피터 로웬하트
무쿤드 스리니바산
안드레아스 피셔
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20060013386A publication Critical patent/KR20060013386A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
KR1020057021083A 2003-05-06 2004-04-29 좁은 갭 용량성 커플링된 반응기의 ｒｆ 펄싱 Ceased KR20060013386A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/431,030 2003-05-06
US10/431,030 US7976673B2 (en) 2003-05-06 2003-05-06 RF pulsing of a narrow gap capacitively coupled reactor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127020117A Division KR101303969B1 (ko) 2003-05-06 2004-04-29 좁은 갭 용량 결합형 반응기의 ｒｆ 펄싱

Publications (1)

Publication Number Publication Date
KR20060013386A true KR20060013386A (ko) 2006-02-09

Family

ID=33416370

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020057021083A Ceased KR20060013386A (ko) 2003-05-06 2004-04-29 좁은 갭 용량성 커플링된 반응기의 ｒｆ 펄싱
KR1020127020117A Expired - Fee Related KR101303969B1 (ko) 2003-05-06 2004-04-29 좁은 갭 용량 결합형 반응기의 ｒｆ 펄싱

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020127020117A Expired - Fee Related KR101303969B1 (ko) 2003-05-06 2004-04-29 좁은 갭 용량 결합형 반응기의 ｒｆ 펄싱

Country Status (9)

Country Link
US (2) US7976673B2 (https=)
EP (1) EP1620876B1 (https=)
JP (1) JP4794449B2 (https=)
KR (2) KR20060013386A (https=)
CN (1) CN1816893B (https=)
AT (1) ATE470949T1 (https=)
DE (1) DE602004027620D1 (https=)
TW (1) TWI460784B (https=)
WO (1) WO2004102638A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
KR20140096367A (ko) * 2011-11-15 2014-08-05 램 리써치 코포레이션 하이브리드 펄싱 플라즈마 처리 시스템

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US9083392B2 (en) * 2005-05-17 2015-07-14 The Regents Of The University Of Michigan Wireless sensing and communication utilizing RF transmissions from microdischarges
JP5192209B2 (ja) 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
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US9114666B2 (en) * 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
KR20140096367A (ko) * 2011-11-15 2014-08-05 램 리써치 코포레이션 하이브리드 펄싱 플라즈마 처리 시스템

Also Published As

Publication number Publication date
US20040221958A1 (en) 2004-11-11
TW200504870A (en) 2005-02-01
EP1620876A2 (en) 2006-02-01
EP1620876B1 (en) 2010-06-09
JP4794449B2 (ja) 2011-10-19
DE602004027620D1 (de) 2010-07-22
US20110263130A1 (en) 2011-10-27
WO2004102638A2 (en) 2004-11-25
CN1816893B (zh) 2012-09-19
KR20120098951A (ko) 2012-09-05
CN1816893A (zh) 2006-08-09
KR101303969B1 (ko) 2013-09-03
US7976673B2 (en) 2011-07-12
ATE470949T1 (de) 2010-06-15
US8337713B2 (en) 2012-12-25
WO2004102638A3 (en) 2005-07-28
TWI460784B (zh) 2014-11-11
JP2007501530A (ja) 2007-01-25

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Decision identifier: 2012101007013

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000