KR20050010770A - 제조 중인 반도체 기판의 가장자리영역 부근에 박막을형성시키는 방법 및 장치 - Google Patents

제조 중인 반도체 기판의 가장자리영역 부근에 박막을형성시키는 방법 및 장치 Download PDF

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Publication number
KR20050010770A
KR20050010770A KR10-2004-7017253A KR20047017253A KR20050010770A KR 20050010770 A KR20050010770 A KR 20050010770A KR 20047017253 A KR20047017253 A KR 20047017253A KR 20050010770 A KR20050010770 A KR 20050010770A
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KR
South Korea
Prior art keywords
wafer
gas
housing
flow
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR10-2004-7017253A
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English (en)
Korean (ko)
Inventor
마이클디.로빈스
Original Assignee
에크리텍 유에스에이 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에크리텍 유에스에이 인크 filed Critical 에크리텍 유에스에이 인크
Publication of KR20050010770A publication Critical patent/KR20050010770A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR10-2004-7017253A 2002-04-26 2003-04-24 제조 중인 반도체 기판의 가장자리영역 부근에 박막을형성시키는 방법 및 장치 Abandoned KR20050010770A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37615402P 2002-04-26 2002-04-26
US60/376,154 2002-04-26
US10/401,074 2003-03-27
US10/401,074 US6936546B2 (en) 2002-04-26 2003-03-27 Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
PCT/US2003/012615 WO2003092337A2 (en) 2002-04-26 2003-04-24 Method and apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates

Publications (1)

Publication Number Publication Date
KR20050010770A true KR20050010770A (ko) 2005-01-28

Family

ID=29254649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7017253A Abandoned KR20050010770A (ko) 2002-04-26 2003-04-24 제조 중인 반도체 기판의 가장자리영역 부근에 박막을형성시키는 방법 및 장치

Country Status (6)

Country Link
US (2) US6936546B2 (https=)
EP (1) EP1500129A4 (https=)
JP (1) JP2005524235A (https=)
KR (1) KR20050010770A (https=)
AU (1) AU2003225127A1 (https=)
WO (1) WO2003092337A2 (https=)

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Also Published As

Publication number Publication date
US6936546B2 (en) 2005-08-30
AU2003225127A1 (en) 2003-11-10
EP1500129A4 (en) 2009-01-21
JP2005524235A (ja) 2005-08-11
EP1500129A2 (en) 2005-01-26
US20050205518A1 (en) 2005-09-22
AU2003225127A8 (en) 2003-11-10
US20030203650A1 (en) 2003-10-30
WO2003092337A2 (en) 2003-11-06
WO2003092337A3 (en) 2004-02-12

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