KR20040014178A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR20040014178A
KR20040014178A KR1020030032807A KR20030032807A KR20040014178A KR 20040014178 A KR20040014178 A KR 20040014178A KR 1020030032807 A KR1020030032807 A KR 1020030032807A KR 20030032807 A KR20030032807 A KR 20030032807A KR 20040014178 A KR20040014178 A KR 20040014178A
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South Korea
Prior art keywords
semiconductor chip
lead
leads
external connection
resin sealing
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KR1020030032807A
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English (en)
Korean (ko)
Inventor
이토후지오
수즈키히로미치
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
가부시키가이샤 히타치초에루.에스.아이.시스테무즈
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Publication of KR20040014178A publication Critical patent/KR20040014178A/ko
Withdrawn legal-status Critical Current

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    • H01L23/495Lead-frames or other flat leads
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    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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KR1020030032807A 2002-06-07 2003-05-23 반도체장치 및 그 제조방법 Withdrawn KR20040014178A (ko)

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KR100815013B1 (ko) * 2005-09-27 2008-03-18 토와 가부시기가이샤 전자부품의 수지밀봉 성형 방법 및 장치

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
US7067905B2 (en) * 2002-08-08 2006-06-27 Micron Technology, Inc. Packaged microelectronic devices including first and second casings
US20040137664A1 (en) * 2003-01-09 2004-07-15 Gidon Elazar Advanced packaging shell for pocketable consumer electronic devices
JP4407489B2 (ja) * 2004-11-19 2010-02-03 株式会社デンソー 半導体装置の製造方法ならびに半導体装置の製造装置
JP2007095804A (ja) * 2005-09-27 2007-04-12 Towa Corp 電子部品の樹脂封止成形方法及び装置
US7863737B2 (en) * 2006-04-01 2011-01-04 Stats Chippac Ltd. Integrated circuit package system with wire bond pattern
JP2011501870A (ja) * 2007-05-08 2011-01-13 オッカム ポートフォリオ リミテッド ライアビリティ カンパニー はんだの無い電子組立体及びそれらの製造方法
US7926173B2 (en) 2007-07-05 2011-04-19 Occam Portfolio Llc Method of making a circuit assembly
US8300425B2 (en) * 2007-07-31 2012-10-30 Occam Portfolio Llc Electronic assemblies without solder having overlapping components
JP5334239B2 (ja) 2008-06-24 2013-11-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8212342B2 (en) * 2009-12-10 2012-07-03 Stats Chippac Ltd. Integrated circuit package system with removable backing element having plated terminal leads and method of manufacture thereof
TWI416637B (zh) 2010-10-15 2013-11-21 南茂科技股份有限公司 晶片封裝結構及晶片封裝方法
US8946875B2 (en) * 2012-01-20 2015-02-03 Intersil Americas LLC Packaged semiconductor devices including pre-molded lead-frame structures, and related methods and systems
TWI550823B (zh) * 2014-04-10 2016-09-21 南茂科技股份有限公司 晶片封裝結構
CN113496955A (zh) * 2020-04-01 2021-10-12 上海凯虹科技电子有限公司 一种塑封模具
US11621181B2 (en) * 2020-05-05 2023-04-04 Asmpt Singapore Pte. Ltd. Dual-sided molding for encapsulating electronic devices
US20250246521A1 (en) * 2024-01-29 2025-07-31 Nxp B.V. Semiconductor device with dual downset leadframe and method therefor

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US5798570A (en) * 1996-06-28 1998-08-25 Kabushiki Kaisha Gotoh Seisakusho Plastic molded semiconductor package with thermal dissipation means
JP2954148B1 (ja) 1998-03-25 1999-09-27 松下電子工業株式会社 樹脂封止型半導体装置の製造方法およびその製造装置
JP3424184B2 (ja) 1998-05-13 2003-07-07 株式会社三井ハイテック 樹脂封止型半導体装置
TW434756B (en) * 1998-06-01 2001-05-16 Hitachi Ltd Semiconductor device and its manufacturing method

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