KR20030048110A - 전자 디바이스 제조용 금속의 전기화학적 공침착 - Google Patents

전자 디바이스 제조용 금속의 전기화학적 공침착 Download PDF

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Publication number
KR20030048110A
KR20030048110A KR10-2003-7006092A KR20037006092A KR20030048110A KR 20030048110 A KR20030048110 A KR 20030048110A KR 20037006092 A KR20037006092 A KR 20037006092A KR 20030048110 A KR20030048110 A KR 20030048110A
Authority
KR
South Korea
Prior art keywords
metal layer
metal
copper
substrate
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7006092A
Other languages
English (en)
Korean (ko)
Inventor
알링에릭알.
베이에스마틴더블유.
Original Assignee
쉬플리 캄파니, 엘.엘.씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쉬플리 캄파니, 엘.엘.씨. filed Critical 쉬플리 캄파니, 엘.엘.씨.
Publication of KR20030048110A publication Critical patent/KR20030048110A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/241—Reinforcing of the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2003-7006092A 2000-11-03 2001-11-03 전자 디바이스 제조용 금속의 전기화학적 공침착 Ceased KR20030048110A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24593700P 2000-11-03 2000-11-03
US60/245,937 2000-11-03
PCT/US2001/047369 WO2002055762A2 (en) 2000-11-03 2001-11-03 Electrochemical co-deposition of metals for electronic device manufacture

Publications (1)

Publication Number Publication Date
KR20030048110A true KR20030048110A (ko) 2003-06-18

Family

ID=22928699

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7006092A Ceased KR20030048110A (ko) 2000-11-03 2001-11-03 전자 디바이스 제조용 금속의 전기화학적 공침착

Country Status (7)

Country Link
US (1) US20020127847A1 (https=)
EP (1) EP1346083A2 (https=)
JP (1) JP2004518022A (https=)
KR (1) KR20030048110A (https=)
CN (1) CN1529772A (https=)
AU (1) AU2002245083A1 (https=)
WO (1) WO2002055762A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017039402A1 (ko) * 2015-09-02 2017-03-09 단국대학교 천안캠퍼스 산학협력단 전주를 이용한 다양한 조성의 합금 박막 제조 방법

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
US6974767B1 (en) * 2002-02-21 2005-12-13 Advanced Micro Devices, Inc. Chemical solution for electroplating a copper-zinc alloy thin film
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
JP4758614B2 (ja) * 2003-04-07 2011-08-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電気めっき組成物および方法
US20050045485A1 (en) * 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
DE10355953B4 (de) * 2003-11-29 2005-10-20 Infineon Technologies Ag Verfahren zum Galvanisieren und Kontaktvorsprungsanordnung
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
US7771579B2 (en) * 2004-12-03 2010-08-10 Taiwan Semiconductor Manufacturing Co. Electro chemical plating additives for improving stress and leveling effect
US7271482B2 (en) * 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
DE102005014748B4 (de) 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
JP2010045140A (ja) * 2008-08-11 2010-02-25 Nec Electronics Corp リードフレーム、リードフレームの製造方法及び半導体装置の製造方法
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
WO2015065150A1 (ko) * 2013-11-04 2015-05-07 서울시립대학교 산학협력단 합금 도금액과 펄스전류를 이용한 다층 도금 박막 제조방법
US9496145B2 (en) * 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods
US9758896B2 (en) 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
KR102554104B1 (ko) * 2015-04-22 2023-07-12 덕산하이메탈(주) 비정질 특성을 갖는 접합소재 및 이의 제조방법
US9809892B1 (en) * 2016-07-18 2017-11-07 Rohm And Haas Electronic Materials Llc Indium electroplating compositions containing 1,10-phenanthroline compounds and methods of electroplating indium
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
RU2684423C1 (ru) * 2018-05-21 2019-04-09 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский государственный технический университет имени Гагарина Ю.А." (СГТУ имени Гагарина Ю.А.) Способ изготовления хеморезистора на основе наноструктур оксида цинка электрохимическим методом
JP7087759B2 (ja) * 2018-07-18 2022-06-21 住友金属鉱山株式会社 銅張積層板
US11901225B2 (en) * 2021-09-14 2024-02-13 Applied Materials, Inc. Diffusion layers in metal interconnects

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713637B2 (https=) * 1973-09-04 1982-03-18
US4108739A (en) * 1973-09-04 1978-08-22 Fuji Photo Film Co., Ltd. Plating method for memory elements
BR8805772A (pt) * 1988-11-01 1990-06-12 Metal Leve Sa Processo de formacao de camada de deslizamento de mancal
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP4394234B2 (ja) * 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
US6679983B2 (en) * 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017039402A1 (ko) * 2015-09-02 2017-03-09 단국대학교 천안캠퍼스 산학협력단 전주를 이용한 다양한 조성의 합금 박막 제조 방법
US10988851B2 (en) 2015-09-02 2021-04-27 Dankook University Cheonan Campus Industry Academic Cooperation Foundation Method for manufacturing composition controlled thin alloy foil by using electro-forming

Also Published As

Publication number Publication date
WO2002055762A3 (en) 2003-07-17
US20020127847A1 (en) 2002-09-12
CN1529772A (zh) 2004-09-15
WO2002055762A2 (en) 2002-07-18
AU2002245083A1 (en) 2002-07-24
JP2004518022A (ja) 2004-06-17
EP1346083A2 (en) 2003-09-24

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