KR20030041838A - 안정한 조성물 - Google Patents
안정한 조성물 Download PDFInfo
- Publication number
- KR20030041838A KR20030041838A KR1020020072533A KR20020072533A KR20030041838A KR 20030041838 A KR20030041838 A KR 20030041838A KR 1020020072533 A KR1020020072533 A KR 1020020072533A KR 20020072533 A KR20020072533 A KR 20020072533A KR 20030041838 A KR20030041838 A KR 20030041838A
- Authority
- KR
- South Korea
- Prior art keywords
- organo polysilica
- resin
- porogen
- staged
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/02—Polysilicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/02—Polysilicates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2201/00—Foams characterised by the foaming process
- C08J2201/04—Foams characterised by the foaming process characterised by the elimination of a liquid or solid component, e.g. precipitation, leaching out, evaporation
- C08J2201/046—Elimination of a polymeric phase
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
Description
Claims (10)
- B-단계 오가노 폴리실리카 수지와 2개 이상의 탄소를 가지며 약 1 내지 약 4의 pKa를 가진 유기산을 포함하며, 실질적으로 반응 알코올(alcohol of reaction)이 없는 안정한 조성물.
- B-단계 오가노 폴리실리카 수지, 포로젠과 2개 이상의 탄소를 가지며 약 1 내지 약 4의 pKa를 가진 유기산을 포함하며, 실질적으로 반응 알코올(alcohol of reaction)이 없는 안정한 조성물.
- B-단계 오가노 폴리실리카 수지와 킬레이트제로서 작용할 수 있는 유기산을 포함하며, 실질적으로 반응 알코올(alcohol of reaction)이 없는 안정한 조성물.
- B-단계 오가노 폴리실리카 수지와 중합 단위로서 하나 이상의 카복실산- 또는 안하이드라이드(anhydride)-함유 모노머 또는 가교제를 함유한 중합 포로젠을 포함하는 안정한 조성물.
- 제 1 내지 4 항 중 어느 한 항에 있어서, B-단계 오가노 폴리실리카 수지가 하나 이상의 화학식 1 또는 2의 실란의 가수분해물 또는 부분 축합물을 포함하는 조성물:[화학식 1]RaSiY4-a[화학식 2]R1 b(R2O)3-bSi(R3)cSi(OR4)3-dR5 d상기 식에서,R은 수소, (C1-C8)알킬, 아릴 및 치환된 아릴이며;Y는 가수분해가능한 기이고;a는 0 내지 2의 정수이며;R1, R2, R4및 R5는 수소, (C1-C6)알킬, 아릴, 및 치환된 아릴로부터 독립적으로 선택되고;R3는 (C1-C10)알킬, -(CH2)h-, (CH2)h1-Ek-(CH2)h2-, -(CH2)h-Z, 아릴렌, 치환된 아릴렌, 및 아릴렌 에테르로부터 선택되며;E는 산소 및 Z로부터 선택되고;Z는 NR6, 아릴 및 치환된 아릴로부터 선택되며;R6는 수소, (C1-C6)알킬, 아릴 및 치환된 아릴로부터 선택되고;b 및 d는 각각 0 내지 2의 정수이며;c는 0 내지 6의 정수이고;h, h1, h2및 k는 독립적으로 1 내지 6의 정수이며;단 R, R1, R3및 R5중의 적어도 하나는 수소가 아니다.
- 제 5 항에 있어서, 가수분해물 또는 부분 축합물이 추가로 식 SiY4(여기서 Y는 할로, (C1-C6)알콕시 또는 아실옥시임)의 4 작용성 실란의 가수분해물 또는 부분 축합물을 포함하는 조성물.
- 제 1 내지 6 항 중 어느 한 항에 있어서, 유기산이 1 내지 10,000 ppm의 양으로 존재하는 조성물.
- 제 2 또는 4 항에 있어서, 포로젠이 중합 단위로서 적어도 하나의 실릴-함유 모노머 또는 폴리(알킬렌 옥사이드) 모노머 및 하나 이상의 가교제를 포함하는 중합 입자인 조성물.
- a) 실질적으로 반응 알코올이 없는 B-단계 오가노 폴리실리카 수지를 제공하고;b) 적어도 2개의 탄소와 약 1 내지 약 4의 pKa를 가진 유기산의 양을 겔화를 야기시키는데 충분한 양 보다 적은 양으로 첨가하는 단계를 포함함을 특징으로 하여 B-단계 오가노 폴리실리카 수지를 안정화시키는 방법.
- a) 제 1 내지 8 항 중 어느 한 항의 안정한 조성물을 전자 디바이스 기판상에 배치하고;b) B-단계 오가노 폴리실리카 수지를 경화하여 오가노 폴리실리카 유전물질을 형성하고;c) 포로젠을 제거하여 기판상에 배치된 다공성 오가노 폴리실리카 물질을 제공하는 단계를 포함하여 다공성 오가노 폴리실리카 유전물질을 형성시킴을 특징으로 하는 전자 디바이스를 제조하는 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33191101P | 2001-11-20 | 2001-11-20 | |
US60/331,911 | 2001-11-20 | ||
US10/194,851 | 2002-07-12 | ||
US10/194,851 US6852367B2 (en) | 2001-11-20 | 2002-07-12 | Stable composition |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030041838A true KR20030041838A (ko) | 2003-05-27 |
KR100995550B1 KR100995550B1 (ko) | 2010-11-19 |
Family
ID=26890462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020072533A KR100995550B1 (ko) | 2001-11-20 | 2002-11-20 | 안정한 조성물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6852367B2 (ko) |
EP (1) | EP1312649B1 (ko) |
JP (2) | JP4903972B2 (ko) |
KR (1) | KR100995550B1 (ko) |
DE (1) | DE60215601T2 (ko) |
TW (1) | TWI279421B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100989117B1 (ko) * | 2007-10-02 | 2010-10-20 | 제일모직주식회사 | 말단기 보호에 의해 보관안정성이 향상된 반도체 미세 갭 필용 조성물 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100496354B1 (ko) * | 2002-03-27 | 2005-06-20 | 서울산업대학교 산학협력단 | 생분해성 고분자 지지체층을 포함하는 하이브리드인공혈관 및 그의 제조 방법 |
US7138185B2 (en) * | 2002-07-05 | 2006-11-21 | Fuji Photo Film Co., Ltd. | Anti-reflection film, polarizing plate and display device |
US7345351B2 (en) * | 2003-04-09 | 2008-03-18 | Lg Chem, Ltd. | Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same |
US20050089642A1 (en) * | 2003-10-28 | 2005-04-28 | Rohm And Haas Electronic Materials, L.L.C. | Dielectric materials preparation |
JP2005133060A (ja) * | 2003-10-29 | 2005-05-26 | Rohm & Haas Electronic Materials Llc | 多孔性材料 |
JP4894153B2 (ja) * | 2005-03-23 | 2012-03-14 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
DE602007000498D1 (de) * | 2006-04-11 | 2009-03-12 | Shinetsu Chemical Co | Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren |
JP5030478B2 (ja) * | 2006-06-02 | 2012-09-19 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
TWI434891B (zh) * | 2007-02-22 | 2014-04-21 | Silecs Oy | 積體電路用高矽含量矽氧烷聚合物 |
KR100894417B1 (ko) * | 2007-09-06 | 2009-04-24 | 제일모직주식회사 | 갭 필 능력이 개선된 반도체 미세 갭 필용 유기실란계중합체 및 이를 이용한 반도체 미세 갭 필용 조성물 |
EP2234929A1 (en) * | 2007-12-14 | 2010-10-06 | DSM IP Assets B.V. | Sol-gel process with a protected catalyst |
JP2011040634A (ja) * | 2009-08-13 | 2011-02-24 | Ulvac Japan Ltd | 多孔質膜の前駆体組成物、多孔質膜及びその作製方法、並びに半導体装置 |
US8648125B2 (en) | 2009-12-04 | 2014-02-11 | Dow Corning Corporation | Stabilization of silsesquioxane resins |
EP2355141A3 (en) * | 2010-02-08 | 2017-09-20 | Fujifilm Corporation | Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate |
JP2011165804A (ja) * | 2010-02-08 | 2011-08-25 | Fujifilm Corp | 半導体装置および半導体素子用基板の製造方法 |
JP2015189856A (ja) * | 2014-03-28 | 2015-11-02 | 株式会社Adeka | ケイ素含有組成物 |
JPWO2017217175A1 (ja) * | 2016-06-17 | 2018-11-01 | 東レ・ファインケミカル株式会社 | シリコーン重合体組成物 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1115051A (en) * | 1964-05-27 | 1968-05-22 | Owens Illinois Inc | Siloxane resins |
US3909424A (en) * | 1974-06-24 | 1975-09-30 | Dow Corning | Lubricant compositions |
US3986997A (en) * | 1974-06-25 | 1976-10-19 | Dow Corning Corporation | Pigment-free coating compositions |
US4177175A (en) * | 1977-12-23 | 1979-12-04 | Dow Corning Corporation | Organothiol-containing siloxane resins as adhesion promoters for siloxane resins |
US4324712A (en) * | 1978-11-30 | 1982-04-13 | General Electric Company | Silicone resin coating composition |
US4223121A (en) * | 1978-12-04 | 1980-09-16 | Owens-Illinois, Inc. | Organopolysiloxane resins of increased hardness |
US4349609A (en) * | 1979-06-21 | 1982-09-14 | Fujitsu Limited | Electronic device having multilayer wiring structure |
JP2624254B2 (ja) * | 1987-05-22 | 1997-06-25 | 東京応化工業株式会社 | シリカ系被膜の膜質改善方法 |
TW492989B (en) * | 1993-03-19 | 2002-07-01 | Dow Corning | Stabilization of hydrogen silsesquioxane resin solutions |
US5895794A (en) * | 1993-08-30 | 1999-04-20 | Dow Corning Corporation | Shelf stable cross-linked emulsions with optimum consistency and handling without the use of thickeners |
DE19515540A1 (de) * | 1995-04-27 | 1996-10-31 | Wacker Chemie Gmbh | Stabilisierung von reaktiven Organopolysiloxanharzen |
KR19980015230A (ko) * | 1996-08-20 | 1998-05-25 | 이웅열 | 압출형 도포장치 |
US6020410A (en) * | 1996-10-29 | 2000-02-01 | Alliedsignal Inc. | Stable solution of a silsesquioxane or siloxane resin and a silicone solvent |
US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US5973095A (en) * | 1997-04-21 | 1999-10-26 | Alliedsignal, Inc. | Synthesis of hydrogensilsesquioxane and organohydridosiloxane resins |
JP3812104B2 (ja) * | 1997-12-02 | 2006-08-23 | Jsr株式会社 | 膜形成用組成物 |
US6231989B1 (en) * | 1998-11-20 | 2001-05-15 | Dow Corning Corporation | Method of forming coatings |
JP4305587B2 (ja) * | 1999-04-27 | 2009-07-29 | Jsr株式会社 | 半導体装置用の層間絶縁膜形成用材料 |
JP2001040283A (ja) * | 1999-07-29 | 2001-02-13 | Jsr Corp | 膜形成用組成物の製造方法、膜形成用組成物および絶縁膜形成用材料 |
US6420441B1 (en) * | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
US6271273B1 (en) * | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
-
2002
- 2002-07-12 US US10/194,851 patent/US6852367B2/en not_active Expired - Lifetime
- 2002-11-18 JP JP2002333272A patent/JP4903972B2/ja not_active Expired - Fee Related
- 2002-11-20 DE DE60215601T patent/DE60215601T2/de not_active Expired - Lifetime
- 2002-11-20 TW TW091133795A patent/TWI279421B/zh not_active IP Right Cessation
- 2002-11-20 EP EP02258001A patent/EP1312649B1/en not_active Expired - Lifetime
- 2002-11-20 KR KR1020020072533A patent/KR100995550B1/ko active IP Right Grant
-
2010
- 2010-08-05 JP JP2010175931A patent/JP2010261049A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100989117B1 (ko) * | 2007-10-02 | 2010-10-20 | 제일모직주식회사 | 말단기 보호에 의해 보관안정성이 향상된 반도체 미세 갭 필용 조성물 |
US8642437B2 (en) | 2007-10-02 | 2014-02-04 | Cheil Industries, Inc. | Gap-filling composition with excellent shelf life by end-capping |
Also Published As
Publication number | Publication date |
---|---|
EP1312649A3 (en) | 2003-08-20 |
KR100995550B1 (ko) | 2010-11-19 |
TWI279421B (en) | 2007-04-21 |
JP2003206403A (ja) | 2003-07-22 |
EP1312649A2 (en) | 2003-05-21 |
EP1312649B1 (en) | 2006-10-25 |
JP4903972B2 (ja) | 2012-03-28 |
TW200300435A (en) | 2003-06-01 |
DE60215601T2 (de) | 2007-08-23 |
DE60215601D1 (de) | 2006-12-07 |
US6852367B2 (en) | 2005-02-08 |
US20030100644A1 (en) | 2003-05-29 |
JP2010261049A (ja) | 2010-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100995550B1 (ko) | 안정한 조성물 | |
US20040109950A1 (en) | Dielectric materials | |
KR101203225B1 (ko) | 막 형성용 조성물, 막 형성용 조성물의 제조 방법, 절연막형성용 재료, 막의 형성 방법 및 실리카계 막 | |
CN100383147C (zh) | 多官能环状硅氧烷化合物和由该化合物制备的硅氧烷基聚合物和用该聚合物制备介电薄膜的方法 | |
US5043789A (en) | Planarizing silsesquioxane copolymer coating | |
JPH02178330A (ja) | 平面化ラダー型シルセスキオキサンポリマー絶縁層の形成方法 | |
KR20070045967A (ko) | 고분자량 유기폴리실록산 제조 방법, 고분자량유기폴리실록산을 포함하는 조성물, 및 이들의 경화생성물로 밀봉된 광학 반도체 장치 | |
JP2010116462A (ja) | シロキサンポリマー、シロキサン系の架橋性組成物及びシリコーン膜 | |
JPH09143420A (ja) | 低誘電率樹脂組成物 | |
JP2006516156A (ja) | 絶縁膜形成用コーティング組成物、その組成物を使用した低誘電絶縁膜の製造方法、その組成物より製造される半導体素子用低誘電絶縁膜およびその絶縁膜からなる半導体素子 | |
EP1223192B1 (en) | Film forming composition, porous film and their preparation | |
JP5547890B2 (ja) | ポリシロキサン系トレンチ埋め込み用反応物 | |
KR100955570B1 (ko) | 저온 경화형 보호막 형성용 조성물, 이로부터 제조되는보호막, 및 이를 포함하는 기재 | |
CN100393730C (zh) | 多官能环状硅酸盐(或酯)化合物,由该化合物制得的基于硅氧烷的聚合物和使用该聚合物制备绝缘膜的方法 | |
EP2240534B1 (en) | Silsesquioxane resins | |
JPH05239165A (ja) | 熱安定性アクリルアミドポリシロキサン組成物 | |
JP2634924B2 (ja) | 紫外線により硬化可能なアクリル機能性ポリジオルガノシロキサン含有組成物 | |
KR101492251B1 (ko) | 개질된 폴리실록산계 공중합체, 이 공중합체를 포함하는 코팅 조성물, 이를 이용하여 얻을 수 있는 코팅 플라스틱 기판과 이의 제조 방법, 및 상기 개질된 폴리실록산계 공중합체의 제조방법 | |
US20050089642A1 (en) | Dielectric materials preparation | |
JP2002146145A (ja) | 環状オレフィン系重合体組成物およびその製造方法 | |
JP2006199854A (ja) | 低屈折率膜 | |
JP4035892B2 (ja) | コーティング用組成物 | |
JP3740714B2 (ja) | シロキサン化合物及びその製造方法、並びに硬化性組成物 | |
JP2013151581A (ja) | ポリシロキサン材料 | |
JP2010042624A (ja) | 積層体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131017 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141023 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151016 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161019 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171018 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181018 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20191016 Year of fee payment: 10 |