KR20030021249A - 에칭용 조성물 - Google Patents

에칭용 조성물 Download PDF

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Publication number
KR20030021249A
KR20030021249A KR10-2003-7000347A KR20037000347A KR20030021249A KR 20030021249 A KR20030021249 A KR 20030021249A KR 20037000347 A KR20037000347 A KR 20037000347A KR 20030021249 A KR20030021249 A KR 20030021249A
Authority
KR
South Korea
Prior art keywords
acid
etching
weight
dihydroxy
solution containing
Prior art date
Application number
KR10-2003-7000347A
Other languages
English (en)
Korean (ko)
Inventor
난바사토시
마루야마다케토
아베히사키
아오야마데츠오
Original Assignee
미츠비시 가스 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000214206A external-priority patent/JP2002033303A/ja
Priority claimed from JP2000214232A external-priority patent/JP2002033304A/ja
Application filed by 미츠비시 가스 가가쿠 가부시키가이샤 filed Critical 미츠비시 가스 가가쿠 가부시키가이샤
Publication of KR20030021249A publication Critical patent/KR20030021249A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
KR10-2003-7000347A 2000-07-14 2001-07-12 에칭용 조성물 KR20030021249A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00214206 2000-07-14
JP2000214206A JP2002033303A (ja) 2000-07-14 2000-07-14 エッチング用組成物
JPJP-P-2000-00214232 2000-07-14
JP2000214232A JP2002033304A (ja) 2000-07-14 2000-07-14 エッチング用組成物
PCT/JP2001/006048 WO2002007200A1 (fr) 2000-07-14 2001-07-12 Compositions de gravure

Publications (1)

Publication Number Publication Date
KR20030021249A true KR20030021249A (ko) 2003-03-12

Family

ID=26596051

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7000347A KR20030021249A (ko) 2000-07-14 2001-07-12 에칭용 조성물

Country Status (3)

Country Link
KR (1) KR20030021249A (ja)
TW (1) TW527442B (ja)
WO (1) WO2002007200A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190127185A (ko) * 2018-05-03 2019-11-13 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
WO2021085837A1 (ko) * 2019-11-01 2021-05-06 삼성에스디아이 주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5431014B2 (ja) * 2009-05-01 2014-03-05 関東化学株式会社 しゅう酸インジウム溶解剤組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448631A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 透明導電膜のエッチング方法
JPH0562966A (ja) * 1991-09-04 1993-03-12 Fujitsu Ltd 透明導電膜のエツチング方法
JPH07141932A (ja) * 1993-11-18 1995-06-02 Kanto Chem Co Inc 透明導電膜のエッチング液組成物
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
JP2000150457A (ja) * 1998-11-09 2000-05-30 Mitsubishi Gas Chem Co Inc 透明導電性膜のエッチング方法
JP4230631B2 (ja) * 1999-12-20 2009-02-25 東芝電子エンジニアリング株式会社 透明導電膜のエッチング液組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190127185A (ko) * 2018-05-03 2019-11-13 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
WO2021085837A1 (ko) * 2019-11-01 2021-05-06 삼성에스디아이 주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
TW527442B (en) 2003-04-11
WO2002007200A1 (fr) 2002-01-24

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