TW527442B - Compositions for etching - Google Patents

Compositions for etching Download PDF

Info

Publication number
TW527442B
TW527442B TW090117067A TW90117067A TW527442B TW 527442 B TW527442 B TW 527442B TW 090117067 A TW090117067 A TW 090117067A TW 90117067 A TW90117067 A TW 90117067A TW 527442 B TW527442 B TW 527442B
Authority
TW
Taiwan
Prior art keywords
acid
etching
composition
scope
acetic acid
Prior art date
Application number
TW090117067A
Other languages
English (en)
Chinese (zh)
Inventor
Satoshi Nanba
Taketo Maruyama
Hisaki Abe
Tetsuo Aoyama
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000214232A external-priority patent/JP2002033304A/ja
Priority claimed from JP2000214206A external-priority patent/JP2002033303A/ja
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Application granted granted Critical
Publication of TW527442B publication Critical patent/TW527442B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C11D2111/22—
TW090117067A 2000-07-14 2001-07-12 Compositions for etching TW527442B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000214232A JP2002033304A (ja) 2000-07-14 2000-07-14 エッチング用組成物
JP2000214206A JP2002033303A (ja) 2000-07-14 2000-07-14 エッチング用組成物

Publications (1)

Publication Number Publication Date
TW527442B true TW527442B (en) 2003-04-11

Family

ID=26596051

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090117067A TW527442B (en) 2000-07-14 2001-07-12 Compositions for etching

Country Status (3)

Country Link
KR (1) KR20030021249A (ja)
TW (1) TW527442B (ja)
WO (1) WO2002007200A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493030B (zh) * 2009-05-01 2015-07-21 Kanto Kagaku 草酸銦溶解劑組成物及使用其之蝕刻裝置系統內的洗淨方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102324275B1 (ko) * 2018-05-03 2021-11-09 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
KR102483009B1 (ko) * 2019-11-01 2022-12-29 삼성에스디아이 주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448631A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 透明導電膜のエッチング方法
JPH0562966A (ja) * 1991-09-04 1993-03-12 Fujitsu Ltd 透明導電膜のエツチング方法
JPH07141932A (ja) * 1993-11-18 1995-06-02 Kanto Chem Co Inc 透明導電膜のエッチング液組成物
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
JP2000150457A (ja) * 1998-11-09 2000-05-30 Mitsubishi Gas Chem Co Inc 透明導電性膜のエッチング方法
JP4230631B2 (ja) * 1999-12-20 2009-02-25 東芝電子エンジニアリング株式会社 透明導電膜のエッチング液組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493030B (zh) * 2009-05-01 2015-07-21 Kanto Kagaku 草酸銦溶解劑組成物及使用其之蝕刻裝置系統內的洗淨方法

Also Published As

Publication number Publication date
KR20030021249A (ko) 2003-03-12
WO2002007200A1 (fr) 2002-01-24

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees