KR20030005029A - Liquid processing apparatus and liquid processing method - Google Patents

Abstract

PURPOSE: An apparatus and a method for processing solution are provided to spread processing solution on a substrate for a short time by scanning a processing solution discharge nozzle, and to improve the quality of the substrate and decrease the defect rate by evenly developing the solution on the substrate. CONSTITUTION: A developing process unit(DEV,24) comprises a roller transferring mechanism(14) for transferring an LCD(Liquid Crystal Display) substrate(G) in a single direction almost in the horizontal attitude, a main developer discharge nozzle(51a) and a sub developer discharge nozzle(51b) for discharging the developer to the LCD substrate, and a nozzle moving mechanism for scanning the main and sub developer discharge nozzles over the LCD substrate. While the main and sub developer discharge nozzles are scanned over the LCD substrate by driving the nozzle moving mechanism, the developer discharge nozzles discharge the developer to the LCD substrate. Accordingly, uniform developing process is performed at the entire part of the LCD substrate by shortening the supply period of the developer.

Description

LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid treatment apparatus and a liquid treatment method for performing liquid treatment such as development treatment on a substrate such as a glass substrate used in a liquid crystal display device (LCD).

In LCD manufacturing, after forming a resist film on an LCD glass substrate (hereinafter referred to as an "LCD substrate"), the resist film is exposed to light in a predetermined circuit pattern and developed using the so-called photolithography technique. The circuit pattern is formed in the board | substrate. Here, with respect to the developing treatment, a method and an apparatus for applying a developing solution to a surface of a substrate conveyed in a horizontal posture to JP11-87210A, forming a paddle on the substrate, and maintaining the predetermined time for progressing the developing reaction are disclosed.

In recent years, however, LCD substrates have a strong demand for large-sized products and have emerged as large as 1m on one side. When the developer is applied to the surface of the LCD substrate while the large LCD substrate is conveyed in a horizontal position, the time difference between the developer first applied portion and the first applied portion is increased in contact with the developer solution, thereby increasing the development reaction. It is difficult to obtain a uniform developing pattern on the LCD substrate as a result of staining.

Although the developer can be applied in a short time by increasing the conveying speed of the LCD substrate, increasing the conveying speed of the LCD substrate conveys the LCD substrate at the same speed within the time required for the development reaction, thereby increasing the distance to convey the LCD substrate. There is a need for this and a new problem arises in which the footprint of the device is widened. In order to shorten the conveyance distance of the LCD substrate, the LCD substrate on which the developer paddle is formed must be stopped quickly. In this case, the developer on the LCD substrate overflows due to the acceleration, so that the development reaction cannot proceed sufficiently. In addition, since the LCD board is suddenly stopped, a large load is applied to the LCD board, which may cause the LCD board to be damaged.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide a liquid processing apparatus and a liquid processing method capable of uniformly treating the entire substrate even on a large substrate without increasing the footprint of the apparatus.

According to the first aspect of the present invention, there is provided a conveying mechanism for conveying a substrate in one direction in a substantially horizontal posture;

A processing liquid discharge nozzle for discharging the processing liquid to the surface of the substrate conveyed by the transfer mechanism;

A nozzle moving mechanism for moving the processing liquid discharge nozzle at a predetermined speed on the substrate;

A liquid processing apparatus is provided for applying the processing liquid to the substrate by discharging the processing liquid from the processing liquid discharge nozzle while moving the processing liquid discharge nozzle by the nozzle moving mechanism.

According to a second aspect of the present invention, there is provided a process for conveying a substrate to a liquid treatment region for liquid treatment with a substantially horizontal posture,

Stopping the conveyance of the substrate in the liquid treatment region or making the conveyance speed of the substrate slower than the substrate conveyance speed to the liquid treatment region;

A liquid treatment having a step of discharging the treatment liquid onto the substrate from the treatment liquid discharge nozzle while horizontally moving the treatment liquid discharge nozzle for applying the treatment liquid to the substrate to apply the treatment liquid to the substrate; A method is provided.

According to a third aspect of the present invention, there is provided a liquid processing apparatus which performs development on a substrate subjected to exposure treatment,

A conveying mechanism for conveying the substrate in one horizontal direction;

A developer discharge nozzle for discharging a developer onto the surface of the substrate conveyed by the transfer mechanism;

A nozzle moving mechanism for moving the developer discharge nozzle on the substrate at a predetermined speed in a direction opposite to the conveying direction of the substrate;

A liquid processing apparatus is provided for applying the developer to the substrate by discharging the developer from the developer discharge nozzle while moving the developer discharge nozzle by the nozzle moving mechanism.

According to a fourth aspect of the present invention, there is provided a liquid treatment method for developing a substrate subjected to exposure treatment.

Conveying the substrate to the developer application area to which the developer is applied in a substantially horizontal position;

Stopping the conveyance of the substrate or making the conveyance speed of the substrate slower than the conveyance speed of the substrate to the developer application region in the developer application region;

Dropping the developer on the substrate by discharging the developer from the developer discharge nozzle while horizontally moving the developer discharge nozzle for applying the developer onto the substrate;

A liquid processing method is provided which has a process of conveying the board | substrate with which the said developing solution fell, to the removal process area | region which removes the said developing solution.

According to the liquid treatment apparatus and the liquid treatment method according to the first to fourth aspects of the present invention, the treatment liquid can be applied to the substrate in a short time by moving the treatment liquid discharge nozzle at a predetermined speed. This makes it possible to perform uniform liquid treatment on the entire substrate. In addition, it is not necessary to convey the substrate to which the treatment liquid is applied at high speed, so that the substrate does not need to be stopped quickly, thereby causing the treatment liquid to overflow on the substrate so that the development reaction does not proceed or is crushed by the stress due to the sudden stop. This problem does not occur or the substrate is overran and broken. Furthermore, since the space required for the transfer of the substrate may be equivalent to that of the conventional art, the increase in the footprint of the apparatus is suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view of a resist coating and developing processing system including a developing unit according to the present invention.

FIG. 2 is a side view showing a first thermal processing unit section of the resist coating and developing processing system shown in FIG.

3 is a side view showing a second thermal processing unit section of the resist coating and developing processing system shown in FIG.

4 is a side view showing a third thermal processing unit section of the resist coating and developing processing system shown in FIG.

5 is a schematic side view of a developing unit according to the present invention.

FIG. 6 is a schematic plan view of the developing unit shown in FIG. 5.

FIG. 7 is a front view of the structure of the first developing solution supply zone of the developing unit shown in FIG. 5 as viewed from the upstream side of the LCD substrate.

FIG. 8 is a perspective view showing the main developer discharge nozzle structure arranged in the first developer solution supply zone of the developing unit shown in FIG. 5; FIG.

FIG. 9A is a side view showing the arrangement of the main developer discharge nozzle and the sub developer discharge nozzle shown in FIG. 5; FIG.

FIG. 9B is a side view showing a developer application form by the main developer discharge nozzle and the sub developer discharge nozzle shown in FIG. 5; FIG.

10 is a flowchart showing an outline of a developing process.

FIG. 11 is an explanatory diagram showing a scanning form of a main developer discharge nozzle and a sub developer discharge nozzle; FIG.

12A is an explanatory diagram showing the line width uniformity relationship between the scanning speeds of the main developer discharge nozzles and the sub developer discharge nozzles and the resulting development pattern.

Fig. 12B is an explanatory diagram showing the line width relationship between the number of droplets of liquid and the resulting development pattern obtained by the main developer discharge nozzle and the sub developer discharge nozzle.

Fig. 12C is an explanatory diagram showing the line width uniformity relationship between the number of droplets of the liquid by the main developer discharge nozzle and the sub developer discharge nozzle and the development pattern obtained.

<Description of the symbols for the main parts of the drawings>

1: cassette station 2: processing station

3: interface station 14: coro return mechanism

17: Coro 24: Development processing unit (DEV)

24a: introduction zone 24b: first developer supply zone

24c: second developer supply zone 24d: developer removal zone

24e: Rinse Zone 24f: Drying Zone

51a: major developer discharge nozzle 51b: negative developer discharge nozzle

51c: developer refill nozzle 52: rinse liquid discharge nozzle

53: rinse nozzle 54: air nozzle (air knife)

55: nozzle fixing member 56: nozzle holding member

57: lifting device 58: arch type arm

59a: guide rail 60: developer supply mechanism

60a: nozzle moving mechanism G: LCD substrate

100: resist coating development processing system (processing device)

Hereinafter, the structure and operation of the present invention will be described in detail with reference to the accompanying drawings. In the present embodiment, a case where the present invention is applied to a developing processing unit DEV for developing the exposed LCD substrate will be described as an example. Fig. 1 is a plan view showing a schematic configuration of a resist coating and developing processing system 100 having a developing processing unit DEV, which is one embodiment of the present invention, and continuously performing processing from formation of a resist film to development.

The resist coating and developing processing system 100 includes a cassette station (load-in / out unit 1) on which a cassette C containing a plurality of LCD substrates G is placed, and a resist coating and development on the LCD substrate G. Interface station (interface part, 3) for taking over the LCD substrate G between a processing station (processing part 2) having a plurality of processing units for performing a series of processes and an exposure apparatus 4 The cassette station 1 and the interface station 3 are disposed at both ends of the processing station 2, respectively. 1, the longitudinal direction of the resist coating and developing processing system 100 is made into the X direction, and the direction orthogonal to the X direction on a plane is made into the Y direction.

The cassette station 1 is a conveying apparatus 11 for carrying in and out of the LCD substrate G between the mounting table 9 and the processing station 2 which can be mounted by standing the cassette C in the Y direction. ), And the cassette C is conveyed between the mounting table 9 and the outside. Moreover, the conveying apparatus 11 has the conveying arm 11a, is movable on the conveyance path 10 provided along the Y direction which is the arrangement direction of the cassette C, and the cassette C is conveyed by the conveying arm 11a. The loading and unloading of the LCD substrate G is performed between and the processing station 2.

The processing station 2 basically has two parallel lines of conveying lines A and B for conveying the LCD substrate G, which extend in the X direction, and the interface station on the cassette station 1 side along the conveying line A. Towards (3), the scrub cleaning processing unit (SCR) 21, the first thermal processing unit section 26, the resist processing unit 23 and the second thermal processing unit section 27 are arranged. Further, along the conveying line B, the second thermal processing unit section 27, the developing processing units DEV, 24, and the i-ray UV irradiation unit i are directed from the interface station 3 side toward the cassette station 1. UV 25 and the third thermal processing unit section 28 are arranged. The excimer UV irradiation unit (e-UV) 22 is provided in part on the scrub cleaning processing unit (SCR) 21. In addition, the excimer UV irradiation unit (e-UV, 22) is installed to remove organic matter from the LCD substrate (G) prior to scrub cleaning, and the i-ray UV irradiation unit (i-UV, 25) is subjected to decolorization treatment. To be installed.

The scrub cleaning processing unit (SCR) 21 is configured such that cleaning and drying processing are performed while the LCD substrate G is conveyed in an approximately horizontal position. Although the development processing unit DEV 24 will be described in detail later, the LCD substrate G is conveyed substantially horizontally so that the developer solution, the developer cleaning after development, and the drying process are performed. In these scrub cleaning units (SCR) 21 and developing units (DEV, 24), the conveyance of the LCD substrate (G) is performed by coro conveyance or belt conveyance, and the inlet and outlet of the LCD substrate (G) It is installed on the short side facing. The conveyance of the LCD substrate G to the i-ray UV irradiation unit i-UV 25 is continuously performed by the same mechanism as that of the developing unit DEV 24.

In the resist processing unit 23, the resist liquid is dropped on the LCD substrate G, which is held substantially horizontal, to rotate the LCD substrate G at a predetermined rotation speed, thereby spreading the resist liquid over the entire LCD substrate G. A resist coating apparatus (CT, 23a) for forming a film, a vacuum drying apparatus (VD, 23b) for vacuum drying the resist film formed on the LCD substrate (G), and a solvent discharge head capable of scanning four sides of the LCD substrate (G) Thereby, peripheral resist removal apparatuses ER 23c for removing excess resist adhering to the periphery of LCD substrate G are arranged in that order. In the resist processing unit 23, the LCD substrate G is transported between the resist coating processing apparatuses CT and 23a, the reduced pressure drying apparatuses VD and 23b, and the peripheral resist removing apparatuses ER and 23c. The carrier arm is provided.

The first thermal processing unit section 26 has two thermal processing unit blocks TB, 31 and 32 formed by stacking thermal processing units for thermal processing on the LCD substrate G, and the thermal processing unit block ( TB, 31 is provided toward the scrub clean processing unit (SCR) 21, and the thermal processing unit blocks TB, 32 are installed toward the resist processing unit (23). The 1st conveyance apparatus 33 is provided between these two thermal unit block TB (31,32).

As shown in the side view of the first thermal processing unit section 26 of FIG. 2, the thermal processing unit blocks TB and 31 pass over the pass substrate PASS 61 which takes over the LCD substrate G in the following order. And two dehydration bake units (DHP, 62, 63) for dehydrating bake on the LCD substrate (G), and the attachment processing units (AD, 64) for performing hydrophobization treatment on the LCD substrate (G). In addition, the thermal processing unit blocks TB and 32 cool down the pass unit PASS 65 and the LCD substrate G, which take over the LCD substrate G in the following order. The two cooling units COL, 66 and 67, and the adhesion processing units AD and 68 for carrying out hydrophobization treatment on the LCD substrate G are stacked in four stages.

The first conveying apparatus 33 receives the LCD substrate G from the scrub cleaning processing unit SCR 21 through the pass unit PASS 61, carrying in and out of the LCD substrate G between the thermal processing units, and the pass. The takeover of the LCD substrate G to the resist processing unit 23 through the unit PASS 65 is performed.

The first conveying apparatus 33 includes a guide rail 91 that extends up and down, an elevating member 92 that elevates along the guide rail 91, and a base member 93 rotatably disposed on the elevating member 92. And a substrate holding arm 94 provided so as to be able to move forward and backward on the base member 93 and holding the LCD substrate G. As shown in FIG. And the lifting of the elevating member 92 is made by the motor 95 and the turning of the base member 93 is made by the motor 96, the front and rear movement of the substrate holding arm 94 is by the motor 97 Is done. Thus, the 1st conveying apparatus 33 is movable in shanghai-dong, front-back movement, and swiveling, and can access any one unit of thermal processing unit blocks TB and 31 * 32.

The second thermal processing unit section 27 has two thermal processing unit blocks (TB, 34, 35) formed by stacking thermal processing units for thermal processing on the LCD substrate G, and thermal processing unit blocks. (TB, 34) is provided toward the resist processing unit 23, and the thermal processing unit blocks TB, 35 are provided toward the developing processing unit DEV (24). A second transfer device 36 is provided between these two thermal processing unit blocks TB, 34, 35.

As shown in the side view of the second thermal processing unit section 27 in FIG. 3, the thermal processing unit blocks TB and 34 pass over the pass substrate PASS 69 to take over the LCD substrate G in the following order. ) And three pre-baking units (PREBAKE, 70, 71, 72) for pre-baking the LCD substrate (G) are stacked in four stages.The thermal processing unit blocks (TB, 35) are shown below. Pass units (PASS, 73) which take over in order, cooling units (COL, 74) for cooling the LCD substrate (G), and two prebaking units for prebaking the LCD substrate (G) (PREBAKE, 75 · 76) has a structure in which it is stacked in four stages.

The second conveying apparatus 36 receives the LCD substrate G from the resist processing unit 23 through the pass unit PASS 69, carries in and out of the LCD substrate G between the thermal processing units, and the pass unit PASS. , LCD for the extension and cooling stage (EXT, COL, 44), which take over the LCD substrate G to the development processing unit DEV 24 through 73, and the substrate take over part of the interface station 3 described later. Take over and receipt of the substrate G are performed. In addition, the second conveying apparatus 36 has the same structure as that of the first conveying apparatus 33 and is accessible to either unit of the thermal processing unit blocks TB and 34 占 35.

The third thermal processing unit section 28 has two thermal processing unit blocks TB, 37 and 38 formed by stacking thermal processing units for thermal processing on the LCD substrate G. The thermal processing unit block ( TB, 37 are installed on the developing unit DEV 24, and the thermal processing unit blocks TB, 38 are installed on the cassette station 1 side. A third transfer device 39 is provided between these two thermal processing unit blocks TB, 37, 38.

As shown in the side view of the third thermal processing unit section 28 in FIG. 4, the thermal processing units TB and 37 pass over the pass substrate PASS 77 which takes over the LCD substrate G in the following order. And three post-baking units (POBAKE, 78, 79, 80) for post-baking the LCD substrate G are stacked in four stages. In addition, the thermal processing unit blocks TB, 38 and the post-baking unit POBAKE 81, the pass cooling unit (PASS COL 82) for taking over and cooling the LCD substrate G in the following order; And a post-baking unit (POBAKE, 83 · 84) for post-baking the LCD substrate G in a four-stacked configuration.

The third conveying apparatus 39 receives the LCD substrate G from the i-UV irradiating unit i-UV 25 through the pass unit PASS 77, and carries out the LCD substrate G between the thermal processing units. Then, the takeover of the LCD substrate G to the cassette station 1 via the pass cooling unit PASS COL 82 is performed. The third conveying apparatus 39 also has the same structure as the first conveying apparatus 33 and is accessible to any unit of the thermal processing unit blocks TB, 37, 38.

In the processing station 2, each processing unit and a conveying apparatus are arranged so as to form two rows of conveying lines A and B as described above and basically in a processing sequence, and a space (between these conveying lines A and B) is provided. 40) is installed. And a shuttle (substrate mounting member) 41 is provided so that this space 40 can be reciprocated. The shuttle 41 is configured to hold the LCD substrate G, and the takeover of the LCD substrate G is carried out between the transfer lines A and B via the shuttle 41. The takeover of the LCD substrate G to the shuttle 41 is made by the first to third conveying devices 33, 36, 39.

The interface station 3 includes a transfer device 42 for carrying in and out of the LCD substrate G between the processing station 2 and the exposure apparatus 4, a buffer stage (BUF) 43 for arranging a buffer cassette, An external device block 45 having an extension and cooling stage (EXT, COL, 44), which is a substrate taking over part having a cooling function, and a titler and an ambient exposure device EE are stacked up and down is conveyed. Adjacent to the device 42 is provided. The conveying apparatus 42 has a conveying arm 42a, and carrying in and out of the LCD substrate G is performed between the processing station 2 and the exposure apparatus 4 by this conveying arm 42a.

In the resist coating and development processing system 100 configured as described above, first, the LCD substrate G in the cassette C disposed on the mounting table 9 of the cassette station 1 is transferred to the processing station 2 by the transfer device 11. ) Is directly loaded into the excimer UV irradiation unit (e-UV) 22 and processed prior to scrub. Subsequently, the LCD substrate G is carried into the scrub cleaning processing unit SCR 21 by the conveying apparatus 11 and scrub-cleaned. After the scrub cleaning process, the LCD substrate G is carried out to the pass units PASS 61 of the thermal processing unit blocks TB and 31 belonging to the first thermal processing unit section 26 by co-feeding.

The LCD substrate G disposed on the pass unit PASS 61 is first conveyed to any one of the dehydration bake units DHP, 62 · 63 of the thermal processing unit blocks TB, 31, and then heat treated, and then the thermal processing unit. After being conveyed to one of the cooling units COL, 66 and 67 of the blocks TB and 32 and cooled, the attachment processing units AD and 64 of the thermal processing unit blocks TB and 31 to improve the fixability of the resist. And the adhesion treatment units AD and 68 of the thermal treatment unit blocks TB and 32, where they are subjected to adhesion treatment (hydrophobic treatment) by the HMDS. Thereafter, the LCD substrate G is conveyed to one of the cooling units COL, 66, 67, cooled, and further conveyed to the pass unit PASS 65 of the thermal processing unit blocks TB, 32. The conveyance process of LCD substrate G at the time of performing such a series of processes is performed by the 1st conveyance apparatus 33 all.

The LCD substrate G disposed in the pass unit PASS 65 is carried into the resist processing unit 23 by the transfer arm of the resist processing unit 23. After the resist liquid is spin-coated in the resist coating processing apparatuses CT and 23a, the LCD substrate G is conveyed to the vacuum drying apparatuses VD and 23b and dried under reduced pressure, and then to the peripheral resist removing apparatuses ER and 23c. It is conveyed and the excess resist peripheral to LCD substrate G is removed. After completion of the removal of the peripheral resist, the LCD substrate G passes from the resist processing unit 23 by the transfer arm to the pass unit PASS of the thermal processing unit blocks TB and 34 belonging to the second thermal processing unit section 27. , 69).

The LCD substrate G disposed in the pass unit PASS 69 is prebaked (PREBAKE, 70, 71, 72) and thermal of the thermal processing unit blocks TB, 34 by the second transfer device 36. It is conveyed to any one of the prebaking units PREBAKE (75, 76) of the processing unit blocks (TB, 35) and prebaked, and is then returned to the cooling units (COL, 74) of the thermal processing unit blocks (TB, 35). And cooled to a predetermined temperature. Then, the second conveying apparatus 36 is conveyed to the pass units PASS 73 of the thermal processing unit blocks TB and 35.

Thereafter, the LCD substrate G is conveyed by the second conveying device 36 to the extension cooling stage EXT COL 44 of the interface station 3 to the conveying device 42 of the interface station 3. Is conveyed to the peripheral exposure apparatus EE of the external device block 45 and exposed for removal of the peripheral resist, which is then conveyed to the exposure apparatus 4 by the transfer apparatus 42, where it is placed on the LCD substrate G. The resist film is exposed to form a predetermined pattern. In some cases, the LCD substrate G is accommodated in the buffer cassette on the buffer stage BUF 43 and then conveyed to the exposure apparatus 4.

After the end of the exposure, the LCD substrate G is brought into the upper title TITLER of the external device block 45 by the conveying device 42 of the interface station 3, and predetermined information is written on the LCD substrate G. Then, it is mounted on the extension cooling stage (EXT COL 44). The LCD substrate G is a pass unit of the thermal processing unit blocks TB and 35 belonging to the second thermal processing unit section 27 in the extension cooling stage EXT COL 44 by the second conveying device 36. Is returned to (PASS, 73).

By acting on the coro conveyance mechanism extending from the pass unit PASS 73 to the developing unit DEV 24, the LCD substrate G is moved from the pass unit PASS 73 to the developing unit DEV 24. It carries in and it develops there. This development process will be described later in detail.

After the completion of the development process, the LCD substrate G is conveyed to the i-line UV irradiation unit i-UV 25 by the coro conveyance, which is a continuous transport mechanism from the development processing unit DEV 24, and is transferred to the LCD substrate G. Decoloration treatment is performed. Thereafter, the LCD substrate G is passed to the thermal processing unit blocks TB and 37 belonging to the third thermal processing unit section 28 by the coro conveyance mechanism in the i-ray UV irradiation unit i-UV 25. Exported to (PASS, 77).

The LCD substrate G disposed on the pass unit PASS 77 is subjected to the post-baking unit POBAKE of the thermal processing unit blocks TB, 37 and thermal processing by the third transfer device 39. It is conveyed to one of the post-baking units (POBAKE, 81, 83, 84) of the unit blocks (TB, 38) and post-baked, and thereafter, the pass cooling unit (PASS, COL, After being conveyed to 82 and cooled to a predetermined temperature, it is accommodated in a predetermined cassette C arranged in the cassette station 1 by the conveying apparatus 11 of the cassette station 1.

Next, the structure of the developing unit DEV 24 will be described in detail. FIG. 5 is a side view showing the schematic structure of the developing processing unit DEV 24, and FIG. 6 is a plan view. The developing unit DEV 24 has an introduction zone 24a, a first developer supply zone 24b, a second developer supply zone 24c, a developer removal zone 24d, a rinse zone 24e, and a dry zone 24f. ) The introduction zone 24a is adjacent to the pass units PASS 73 of the thermal processing unit blocks TB and 35, and the drying zone 24f is adjacent to the i-ray UV irradiation unit i-UV 25. .

Between the pass unit PASS 73 and the i-ray UV irradiation unit i-UV 25, the corro 17 is rotated by driving a motor or the like to move the LCD substrate G on the corro 17 in a predetermined direction. A coro conveying mechanism 14 for conveying is provided, and by operating the coro conveying mechanism 14, the LCD substrate G is moved from the pass unit PASS 73 through the developing processing unit DEV 24 to the i-line. It can be conveyed toward the UV irradiation unit (i-UV, 25). The corro 17 is provided as many as a predetermined number in the conveying direction of the LCD substrate G and in a direction perpendicular to the conveying direction so that bending or the like does not occur on the LCD substrate G. In addition, in FIG. 6, this coro conveyance mechanism 14 is not shown.

In the developing unit DEV 24, as shown in FIG. 5, the coro conveyance mechanism 14 is divided into three regions and can be driven independently for each region. The pass unit PASS 73 and the introduction zone 24a carry the LCD substrate G by driving the first motor 15a. In addition, the first developer supply zone 24b, the second developer supply zone 24c, and the developer removal zone 24d carry the LCD substrate G by driving the second motor 15b. Furthermore, the rinse zone 24e and the drying zone 24f carry the LCD substrate G by driving the third motor 15c. Such dividing driving of the coro conveyance mechanism 14 may be performed for each zone constituting the developing processing unit DEV 24.

The pass unit PASS 73 is provided with the lifting pin 16 which can raise and lower freely. When the lifting pin 16 is raised while the substrate holding arm 94 of the second conveying device 36 holding the LCD substrate G enters the pass unit PASS 73, the LCD substrate G The substrate holding arm 94 takes over the lifting pins 16. Subsequently, after the substrate holding arm 94 is removed from the pass unit PASS 73 and the lifting pin 16 is lowered, the LCD substrate G is placed on the corro 17 in the pass unit PASS 73. . By driving the first motor 15a, the LCD substrate G is carried out from the pass unit PASS 73 into the introduction zone 24a.

The introduction zone 24a is provided as a buffer area between the pass unit PASS 73 and the first developer supply zone 24b. The introduction zone 24a is a pass unit (1) in the first developer supply zone 24b. The PASS 73 prevents the pass unit PASS 73 from being contaminated, such as scattering of the developer.

The first developer supply zone 24b is a zone for dropping the first developer droplet (paddle formation) onto the LCD substrate G conveyed from the introduction zone 24a, and a developer for coating the developer onto the LCD substrate G. The supply mechanism 60 is provided.

FIG. 7 is a front view of the structure of the first developer supply zone 24b seen from the upstream side in the conveyance direction of the LCD substrate G. FIG. The developer supply mechanism 60 includes two main developer discharge nozzles 51a for discharging the developer solution to the LCD substrate G and a sub developer discharge nozzle 51b (hereinafter referred to as developer nozzles 51a and 51b). A nozzle, a nozzle fixing member 55 for fixing these two nozzles, a nozzle holding member 56 for holding the nozzle fixing member 55, a lifting device 57 for raising and lowering the nozzle holding member 56, and And a nozzle moving mechanism 60a for scanning the developing nozzles 51a and 51b in the X direction.

The nozzle moving mechanism 60a includes an arcuate arm 58 holding the elevating device 57, a guide rail 59a, and a drive mechanism 46 for scanning the arcuate arm 58 along the guide rail 59a. And a rail holding member 59b for holding the guide rail 59a and a guide fixing rod 59c for fixing the rail holding member 59b. In addition, the developer supply mechanism 60 has a control mechanism 47 for controlling the operation of the elevating device 57 and the drive mechanism 46, which is a developer from the developing nozzles 51a and 51b. It is possible to control the discharge amount and the discharge start and stop.

In addition, the structure of the coro conveyance mechanism 14 is written together in FIG. That is, the coro conveyance mechanism 14 extends in the conveying direction (X direction) of the LCD substrate G, and rotates in the X-axis direction by the second motor 15b (not shown in FIG. 7, see FIG. 5). The axis 19, the first gear 19a fixed to the axis 19 and rotating in the X-axis direction, and the corro 17 at a predetermined interval in the width direction (Y direction) of the LCD substrate G are long. A second shaft that is provided in engagement with the first gear 19a at the one end of the spindle 18 and converts the X-axis rotation of the first gear 19a into the Y-axis rotation. A third gear 18b provided at the cogwheel 18a and the other end of the shaft 18 and rotating through the shaft 18a by the rotation of the second gear 18a, and rotating in the X-axis direction; The free shaft 19 'and the third gear 18b are engaged with the spindle 19' and engaged with the shaft 19 ', and the Y axis of the third gear 18b is provided. Fourth to convert directional rotation to X-axis rotation It has cogwheel 19b.

In the coro conveying mechanism 14, a drive unit for rotating the shaft 18 is composed of a shaft 19, a first gear 19a, a second gear 18a, and a second motor 15b. The third gear 18b, the axis 19 ', and the fourth gear 19b play a role of smoothing the rotation of the axis 18 and supporting the axis 18.

8 is a perspective view showing the structure of the main developing liquid ejecting nozzle 51a. The main developing liquid ejecting nozzle 51a has a long structure in the width direction (Y direction) of the LCD substrate G. As shown in FIG. A developing solution supply pipe 49a is provided in the upper center of the main developing liquid ejecting nozzle 51a to feed the developing solution to the main developing liquid ejecting nozzle 51a, and a lower end thereof has a strip shape in a discharge port 49b formed along the longitudinal direction. The developer can be discharged. The non-developing liquid ejecting nozzle 51b has the same structure as the main developing liquid ejecting nozzle 51a.

The developing nozzles 51a and 51b are held in parallel by the nozzle fixing member 55 at predetermined intervals so that the longitudinal direction coincides with the Y direction. Also, by elevating the nozzle holding member 56 by driving the elevating device 57, the developing nozzles 51a and 51b can be raised and lowered, thereby discharging the ejection port 49b of the developing nozzles 51a and 51b and the LCD substrate. The gap between the surfaces of (G) can be adjusted. In addition, fitting portions 58a fitted to the guide rails 59a are formed at both ends of the arcuate arm 58, and the arcuate arm 58 is driven by the drive mechanism 46 in the longitudinal direction of the guide rail 59a. It slides freely in the X direction.

In the developing solution supply mechanism 60, the developing nozzles 51a and 51b are scanned in the X direction while discharging the substantially strip-shaped developer in the Y direction with respect to the LCD substrate G. (In other words, the arcuate arm 58 is slid in the X direction.) The developer can be dropped onto the surface of the LCD substrate G. FIG.

In order to make the developing treatment of the LCD substrate G uniform as a whole, it is necessary to apply the developer in the amount necessary for the developing reaction uniformly on the LCD substrate G in the shortest possible time. By using two developing nozzles 51a and 51b, a predetermined amount of developer can be discharged in a short time and in a stable manner. The scanning speeds of the developing nozzles 51a and 51b are preferably 100 mm / sec or more and 500 mm / sec or less.

If the scanning speed of the developing nozzles 51a and 51b is less than 100 mm / sec, the same processing can be performed by changing the conveyance speed of the LCD substrate G without scanning the developing nozzles 51a and 51b. The merit of scanning 51a * 51b cannot be seen. On the other hand, if it is larger than 500 mm / sec, a portion at which the liquid dropping speed is too high to cause the developer not to drop, or an unreasonable point such as the developer tending to overflow from the LCD substrate G may occur. If the scanning speeds of the developing nozzles 51a and 51b are between these ranges, the liquid may be dropped even if the length of the LCD substrate G is taken into consideration, irrespective of the time difference at which the drops begin to drop or end.

In addition, the number of liquid drops to the LCD substrate G is not limited to one time, but it is also possible to perform the liquid drop processing multiple times. For example, after the liquid drop is performed once on the LCD substrate G, the developing nozzles 51a and 51b may be raised to return to their original positions, and then the liquid may be dropped again.

Fig. 9A is a side view showing in more detail the arrangement of the developing nozzles 51a and 51b shown in Fig. 5, and Fig. 9B scans the developing nozzles 51a and 51b while discharging the developing solution from the developing nozzles 51a and 51b. It is explanatory drawing which shows the state made to let it.

In the developer supply mechanism 60, when the developer is dropped on the surface of the LCD substrate G, the arcuate arm 58 is scanned in a direction opposite to the conveying direction of the LCD substrate G. In the main developer discharge nozzle 51a, the main developer discharge nozzle 51a is disposed upstream of the substrate conveying direction so that the developer is applied to the LCD substrate G, and the non-developing solution discharge nozzle 51b is disposed downstream of the substrate conveying direction. It is. The developer is discharged from the main developer discharging nozzle 51a and dropped onto the LCD substrate G so that the developer is discharged from the negative developer discharging nozzle 51b to supplement the developer. This can shorten the developing time and improve the developing precision.

When the developing nozzles 51a and 51b are scanned, the developing solution that has already been discharged onto the LCD substrate G by the main developing liquid ejecting nozzle 51a by the main developing liquid ejecting nozzle 51a is applied to the developing nozzles 51a and 51b. In order not to press in the scanning direction (refer to FIG. 9B), the gap width D between the non-developing liquid discharge nozzle 51b and the LCD substrate G is the gap width between the main developer liquid discharge nozzle 51a and the LCD substrate G. It is preferable to set wider than (d).

For example, the gap width d is 1.5 mm to 2.5 mm, and the gap width D is 3 mm to 5 mm. When the gap width d is less than 1.5 mm, the positional adjustment of the main developer discharge nozzle 51a becomes slightly difficult. In the case where the gap width d is 2.5 mm or more, bubbles are formed in the developing solution at the time of discharging the developing solution, and these bubbles adhere to the surface of the LCD substrate G, and there is a possibility that developing defects occur in the portion. When the gap width D is 5 mm or more, the developer already coated on the LCD substrate G is agitated greatly, thereby causing a problem that the line width uniformity is lowered. In addition, since the distance from the surface of the developer in which the liquid is dropped onto the LCD substrate G by the main developer liquid discharge nozzle 51a does not exceed 1 mm, it is possible to prevent the air bubbles from rolling.

The developing nozzles 51a and 51b are inclined at an angle θ of 5 degrees or more and 15 degrees or less with respect to the vertical direction so that the developing solution is discharged in the scanning direction under the oblique line in the scanning direction when scanning by the nozzle moving mechanism 60a. The picture remains intact.

For example, when the developer discharged from the main developer discharge nozzle 51a to the LCD substrate G tends to extend forward in the scanning direction of the main developer discharge nozzle 51a, the main developer discharge nozzle 51a is connected to the LCD substrate ( G) The impact (development is the force corresponding to the LCD substrate G) on the LCD substrate G of the developer discharged to the G substrate is applied first above the developer applied on the LCD substrate G, so that the direct developer is the LCD substrate. It becomes weak compared with the case discharged to (G). For this reason, there arises a problem that the development accuracy is reduced.

By inclining the main developer discharge nozzle 51a by a predetermined angle [theta], the developer discharged from the main developer discharge nozzle 51a becomes difficult to extend forward in the scanning direction of the developer nozzles 51a and 51b. As a result, the impact of the developer discharged from the main developer discharge nozzle 51a is directly applied to the LCD substrate G, thereby improving the development accuracy.

In the non-developing solution discharge nozzle 51b, the developer is newly discharged from the developer discharged from the main developer discharge nozzle 51a. Therefore, the developer discharged from the non-developing solution discharge nozzle 51b is compared with the case of the main developer discharge nozzle 51a. This does not impart a large impact on the LCD substrate G. The developer developing nozzle 51b is preferably inclined by a predetermined angle θ so that the developer first applied to the LCD substrate G is not greatly stirred by the developer discharged from the developer developing nozzle 51b.

Thus, in the first developer supply zone 24b, the LCD substrate G does not need to be transported at high speed in order to discharge the developer onto the LCD substrate G while scanning the developing nozzles 51a and 51b. As a result, an accident such as causing an crush or damage to the LCD substrate G due to an overran and a sudden stop of the conveyance during the transfer of the LCD substrate G is prevented. In addition, since the LCD substrate G does not need to be suddenly stopped after the developer is supplied, it is possible to prevent the developer from dropping the liquid onto the LCD substrate G, and the developer can be effectively used.

In the first developer supply zone 24b, the developer liquid can be dropped while conveying the LCD substrate G at a low speed or by stopping the LCD substrate G.However, the developer is applied by stopping the LCD substrate G. In the case of using, it is possible to carry out in a particularly stable state, whereby line width uniformity can be improved.

The developer may overflow on the LCD substrate G during the transfer of the LCD substrate G from which the developer is removed from the first developer supply zone 24b to the developer removal zone 24b. In the second developer supply zone 24c, a developer is newly added to the LCD substrate G in order to prevent the developing reaction from flowing by the developer from the LCD substrate G during the conveyance of the LCD substrate G. You can supplement.

In the second developer supply zone 24c, in the developer replenishment nozzle 51c having the same structure as the main developer discharge nozzle 51a, the longitudinal direction is in the Y-direction so as to have the same structure as the arcuate arm 58; It is fixed by an arm (not shown) which is not. In the developer replenishment nozzle 51c, a predetermined amount of developer is discharged in the form of a substantially long strip in the Y direction on the LCD substrate G conveyed by the coro transfer mechanism 14, and thus flows out of the LCD substrate G at the time of conveyance. The overflowing developer is replenished.

In the developer removal zone 24d, a posture change mechanism not shown for exchanging the LCD substrate G in an oblique position, and a rinse liquid (for example, pure water) for discharging the developer solution on the surface of the LCD substrate G are discharged. A rinse liquid discharge nozzle 52 is provided. In the LCD substrate G, the developing reaction takes place while being conveyed from the first developer supply zone 24b to the developer removal zone 24d. In the developer removal zone 24d, the LCD substrate G is replaced in an oblique position to pour out the developer solution on the LCD substrate G, and the LCD substrate G is held in an oblique position. The developer on the LCD substrate G can be washed out by discharging pure water onto the surface of the LCD substrate G while scanning the rinse liquid discharge nozzle 52 along the surface of the LCD substrate G from the upper end to the lower end.

The rinse liquid discharging nozzle 52 is capable of scanning at a speed of 500 mm / sec to wash off the developer in a short time. In practice, the line width uniformity of the developing pattern can be improved by setting the scanning speed of the rinse liquid ejection nozzle 52 to 100 mm / sec to 300 mm / sec, more preferably 200 mm / sec to 300 mm / sec. As the rinse liquid discharging nozzle 52, a structure capable of discharging the rinse liquid in a film form similarly to the developing nozzles 51a and 51b can be optimally used, whereby development of the developing stain can be prevented.

In the rinse zone 24e, a rinse nozzle 53 for discharging rinse liquid such as pure water toward the LCD substrate G is provided. In the rinse zone 24e, while rinsing the LCD substrate G at a predetermined speed, the rinse liquid is discharged to the front and rear surfaces of the LCD substrate G, and the developer attached to the LCD substrate G is removed and cleaned. In addition, the rinse nozzle 53 has a shape longer than the width of the LCD substrate G, and the rinse liquid can be discharged in the entire width direction of the LCD substrate G.

An air nozzle (air knife) 54 for injecting dry gas such as nitrogen gas at a predetermined wind pressure is provided in the drying zone 24f through which the LCD substrate G passed through the rinse zone 24e is conveyed. In the drying zone 24f, while drying the LCD substrate G at a predetermined speed, a dry gas is sprayed onto the front and rear surfaces of the LCD substrate G to rinse the rinse liquid attached to the LCD substrate G to display the LCD substrate G. ). In addition, the air nozzle 54 has a shape longer than the width of the LCD substrate G, and the dry gas can be discharged to the entire width direction of the LCD substrate G. As shown in FIG. The LCD substrate G, which has been dried, is conveyed to the i-ray UV irradiation unit (i-UV) 25 by the coro conveyance mechanism 14.

Next, the development processing step in the development processing unit DEV 24 will be described. FIG. 10 is an explanatory diagram (flow chart) showing the outline of the development processing step. The LCD substrate G carried into the pass unit PASS 73 passes through the introduction zone 24a by the coro transport mechanism 14 and is carried into the first developer supply zone 24b. (Step 1) The conveyance speed of the LCD substrate G from the unit PASS 73 to the first developer supply zone 24b is set to 65 mm / sec.

In the first developer supply zone 24b, the LCD substrate G is stopped at a predetermined position (step 2), and the developing nozzles 51a and 51b are scanned at a speed of 240 mm / sec, and the LCD substrate G The developer is discharged onto the surface, and the developer is dropped. (Step 3) By controlling the LCD substrate G to be stopped, driving control of the developing nozzles 51a and 51b becomes easy. In addition, it is possible to stably drop the developer onto the LCD substrate G.

11 is an explanatory diagram showing a scanning state of the developing nozzles 51a and 51b. The developing nozzles 51a and 51b are scanned from right to left in Fig. 11, and the right end of the LCD substrate G shown in Fig. 11 is referred to as the "starting end for dropping liquid" and the left end is "dropped." End end ”. After the height position of the developing nozzles 51a and 51b is adjusted by the elevating device 57, the drive mechanism 46 is operated to start the scanning of the developing nozzles 51a and 51b. When the main developer liquid discharge nozzle 51a reaches the position 1 cm on the right side of the liquid dropping start end (hereinafter referred to as "discharge starting position"), which is a predetermined position on the right side from the start end of the liquid dropping, from the main developer liquid discharge nozzle 51a (Step 3a) By this, it is possible to drop the developer at the start end where the liquid is reliably dropped. Similarly, when the negative developer discharge nozzle 51b reaches the discharge start position, discharge of the developer solution from the negative developer discharge nozzle 51b is started (step 3b).

Then, the developing nozzles 51a and 51b are scanned on the LCD substrate G, and the developer is dropped on the entire LCD substrate G. (Step 3c) At this time, as described with reference to FIGS. 9A and 9B. When the nozzles 51a and 51b are scanning on the LCD substrate G, the developer is discharged toward the diagonally rearward rear of the developing nozzles 51a and 51b. In addition, the non-developing liquid ejecting nozzle 51b does not scrape the developer applied on the LCD substrate G by the main developing liquid ejecting nozzle 51a in the scanning direction of the developing nozzles 51a and 51b. The developer is applied.

The developer may be discharged to the LCD substrate G until the non-developing liquid ejection nozzle 51b passes through the end of the liquid dropping, but preferably, when the main developing liquid discharge nozzle 51a reaches the end of the liquid dropping, When the developer solution discharge from the developer discharge nozzle 51a is stopped (step 3d), and when the negative developer discharge nozzle 51a reaches the end where the liquid drops, the lower end of the developer solution discharge nozzle 51b is the liquid of the LCD substrate G. The developing nozzles 51a and 51b are moved so as to be close to or abut the end of the drop. (Step 3f) By moving the non-developing solution discharge nozzle 51b to this position, the developer applied onto the LCD substrate G is liquefied. Overflow can be prevented from falling end. When the non-developing solution discharge nozzle 51b is brought into contact with the LCD substrate G, fine control is performed so that the LCD substrate G is not damaged by the contact.

After the one dropping operation shown in Fig. 11 is finished, it is also preferable to return the developing nozzles 51a and 51b to the starting end portion for dropping the liquid, and apply the developer to the LCD substrate G again (step 3g). By performing the liquid drop on the LCD substrate G a plurality of times, it is possible to shorten the development time while increasing and maintaining the development accuracy.

12A, 12B, and 12C are explanatory diagrams showing the relationship between the developing pattern characteristics obtained under the condition that the liquid falls on the LCD substrate G, and FIG. 12A is a scan speed and line width of the developing nozzles 51a and 51b. 12B shows the relationship between the number of drops falling and the line width, and FIG. 12C shows the relationship between the number of drops falling and the line width uniformity.

The results shown in FIGS. 12A to C show that the LCD substrate G is exposed to light under a predetermined condition using a mask having a predetermined pattern having a line width of 8 μm or 10 μm, and then the exposed LCD substrate G is developed under various conditions. The pattern of the resist film thus obtained was observed by SEM observation and the line width (protrusion width in the development pattern) was measured. In this SEM observation, in order to observe the whole LCD board | substrate G, the several observation point was provided radially about 8 directions exchanged at equal angles in the substantially center of LCD board | substrate G. As shown to FIG.

As a result shown in Fig. 12A, using a mask having a pattern having a line width of 10 mu m, the developer discharge flow rate from the developing nozzles 51a and 51b was made constant regardless of the scanning speed of the developing nozzles 51a and 51b, and the developing nozzle ( It is obtained by changing the scanning speeds of 51a and 51b in only one drop, and by keeping the developing time (the time from starting application of the developing solution to removing the developing solution from the LCD substrate G). In addition, one bar graph in FIG. 12A corresponds to one LCD substrate G. FIG.

As shown in FIG. 12A, when the number of times of the liquid dropping of the developing nozzles 51a and 51b is one, it was found that the faster the scanning speed of the developing nozzles 51a and 51b is, the better the line width uniformity is. This is because the developer retention amount at the start end dropping the developer drops, the partial overreaction of the phenomenon occurring at the start end is suppressed, and the liquid dropping time over the entire LCD substrate G is short, so that the LCD substrate G is uniform throughout. It is thought that the development reaction proceeded.

The "partial overreaction of the phenomenon which occurs in the starting end which drops a developer" is as follows. That is, while the developer is supplied in the scanning direction along with the scanning of the developing nozzles 51a and 51b, some of the developer flows in the direction opposite to the scanning direction. This returning developer cannot flow any more at the starting end of the developer, and stays there. For this reason, at the start end where the developer falls, the developer is in an over-supplied state, and the developing reaction proceeds more than other portions, and the over reaction proceeds. Partial overreaction of this phenomenon results in increased variation in in-plane line width.

By increasing the scanning speed of the developing nozzles 51a and 51b, the amount of the developer returned can be reduced, so that partial overreaction at the start end of the developer drop is suppressed.

In addition, since the developer discharge flow rate and the suspension time from the developing nozzles 51a and 51b were made constant, when the scan speed was 100 mm / sec, the average line width was 9.94 µm, which was close to the mask pattern, The deviation increased. On the other hand, when the scan speed is 210 mm / sec, the average line width is 9.78 占 퐉, which is slightly narrower than the mask pattern, but the line width variation of the entire LCD substrate G is small. The result is that when the scanning speed of the developing nozzles 51a and 51b is fast, the impact on the resist of the developing solution is increased and the developing reaction is accelerated. Therefore, the developing reaction is too advanced when the scanning speed is 210 mm / sec. I think. Therefore, in the case where the developing nozzles 51a and 51b are scanned at high speed, it is considered that the average line width can be brought closer to the mask pattern and the line width uniformity can be increased by shortening the developing time.

The results shown in Fig. 12B are obtained by using a mask having a pattern having a line width of 8 占 퐉, the scanning speed of the developing nozzles 51a and 51b being 80mm / sec, the developer discharge amount being 5.6L (liter) / min, and the developing nozzle. The average line width at the time of making the developing time constant and changing the number of times of dropping the liquid is shown for the case where the scanning speed of (51a · 51b) is 160 mm / sec and the developer discharge amount is 9.4 L / min. As shown in Fig. 12B, as the number of droppings increases, the average line width narrows. This shows that the developing reaction proceeds rapidly as the number of drops drops, so that the developing time can be shortened by increasing the number of drops.

The results shown in FIG. 12C show that the scanning speed of the developing nozzles 51a and 51b is 80mm / sec, the developer discharge amount is 5.6L / liter / min using a mask having a pattern having a line width of 8 μm, and the developing nozzle ( The line width uniformity at the time of changing the number of drippings is shown with the developing time constant when the scanning speed of 51a * 51b) is 160 mm / sec and the developer discharge amount is 9.4 L / min. In addition, one bar graph in FIG. 12C corresponds to one LCD substrate G. FIG.

In the case where the number of drops of liquid is the same as shown in Fig. 12C, the line width uniformity tends to be improved as the scanning speeds of the developing nozzles 51a and 51b become larger. In addition, when the scanning speed of the developing nozzles 51a and 51b is increased (160 mm / sec), the line width uniformity is improved as the number of drops of liquid increases. From these results, it can be seen that increasing the scan speed of the developing nozzles 51a and 51b and increasing the number of times of liquid drop is effective for improving the line width uniformity.

The LCD substrate G, which has been processed in the first developer supply zone 24b, is operated by the coro conveyance mechanism 14 and conveyed to the second developer supply zone 24c at a conveyance speed of 46 mm / sec. 4) When the LCD substrate G passes through the second developer supply zone 24c, the developer may be replenished on the LCD substrate G by the developer replenishment nozzle 51c. (Step 5)

The LCD substrate G conveyed to the second developer supply zone 24c is also conveyed to the developer removal zone 24d (step 6), where the LCD substrate G is converted to an oblique posture on the LCD substrate G. The developer is allowed to flow down (Step 7), and while the LCD substrate G is held in an oblique position, the rinse liquid is discharged from the rinse liquid ejection nozzle 52 to the surface of the LCD substrate G, thereby displacing the LCD substrate ( The developer in G) is washed away (step 8).

Subsequently, the LCD substrate G is conveyed to the rinse zone 24e (step 9), whereby the rinse liquid is discharged to the front and rear surfaces of the LCD substrate G while the LCD substrate G is conveyed at a predetermined speed. The developer adhered to the substrate G is removed and washed. (Step 10) The LCD substrate G having passed through the rinse zone 24e while being rinsed is conveyed to the drying zone 24f. Step 11) In the drying zone 24f, the drying process is performed by the air nozzle 54 while the LCD substrate G is conveyed at a predetermined speed. (Step 12) The LCD substrate G, which has been dried, is co-transferred. By the mechanism 14, it is conveyed to i line | wire UV irradiation unit (i-UV) 25 (step 13), and a predetermined ultraviolet irradiation process is performed there.

As mentioned above, although the Example of this invention was described, this invention is not limited to the said Example. One or more developer discharge nozzles may be arranged in the first developer supply zone 24b. In the case of using one developer discharge nozzle, the developer flow rate discharged from the developer discharge nozzle must be increased, so that the developer output is increased so that the developer discharged onto the LCD substrate G does not overflow from the LCD substrate G. The developer discharge state from the discharge nozzle, the discharge direction of the developer and the earth output are controlled.

In the first developer supply zone 24b, the developer is applied to the LCD substrate G while being transported at a speed such that the developer applied on the LCD substrate G does not overflow without stopping the LCD substrate G. You may also In addition, although the scanning direction of the developing nozzles 51a and 51b was set in the opposite direction to the conveying direction of the LCD substrate G, when stopping the LCD substrate G, the direction perpendicular to the conveying direction of the LCD substrate G was observed. The developing nozzles 51a and 51b may be scanned.

As described above, according to the liquid treatment apparatus and the liquid treatment method of the present invention, the treatment liquid can be applied to the substrate in a short time by scanning the treatment liquid discharge nozzle at a predetermined speed, so that the liquid is uniform throughout the substrate. It can be processed. In this way, the effect of improving the quality of the substrate and reducing the incidence of product defects can be obtained. In addition, it is not necessary to convey the substrate coated with the processing liquid at high speed, so that it is not necessary to suddenly stop the substrate, thereby causing the processing liquid to overflow on the substrate so that the liquid treatment does not proceed, or the amount of the processing liquid overflowed is further supplemented. none. In addition, it is possible to prevent problems such as crushing on the substrate due to stress caused by sudden stoppage, or occurrence of breakage due to over-overlapping of the substrate, thereby increasing the production-to-product ratio and reducing the management load. Moreover, since the space required for conveyance of a board | substrate may be equivalent to the past, increase of the footprint of an apparatus is suppressed.

Claims (20)

A conveying mechanism for conveying the substrate in one direction in a substantially horizontal position; A processing liquid discharge nozzle for discharging the processing liquid to the substrate surface conveyed by the transfer mechanism; And a nozzle moving mechanism for moving the processing liquid discharge nozzle on the substrate at a predetermined speed, A liquid processing apparatus for applying the processing liquid to the substrate by discharging the processing liquid from the processing liquid discharge nozzle while moving the processing liquid discharge nozzle by the nozzle moving mechanism. The method according to claim 1, And a fixed processing liquid refilling nozzle for applying said processing liquid to the substrate surface to which said processing liquid is applied by said processing liquid discharge nozzle and conveyed by said conveying mechanism. The method according to claim 2, The treatment liquid refilling nozzle has a shape long in a direction orthogonal to the conveying direction of the substrate, And the processing liquid is substantially band-filled in the entirety of the direction orthogonal to the conveying direction with respect to the substrate passing through the processing liquid refilling nozzle. The method according to any one of claims 1 to 3, And the nozzle moving mechanism moves the processing liquid discharge nozzle in a direction opposite to the conveying direction of the substrate. The method according to any one of claims 1 to 3, The treatment liquid discharge nozzle is composed of two nozzles, a main treatment liquid discharge nozzle and a sub-treatment liquid discharge nozzle, which are long in a direction orthogonal to the moving direction by the nozzle moving mechanism. The main processing liquid discharge nozzle and the sub processing liquid discharge nozzle are arranged in parallel so that the main processing liquid discharge nozzle is located in front of the moving direction by the nozzle moving mechanism and the sub processing liquid discharge nozzle is located behind the moving direction. , And the processing liquid is discharged in a substantially band shape from the main processing liquid discharge nozzle and the sub-process liquid discharge nozzle to an entire direction perpendicular to the moving direction with respect to the substrate. The method according to claim 5, And a spacing between the subtreatment liquid discharge nozzle and the substrate is wider than a spacing between the main treatment liquid discharge nozzle and the substrate. The method according to any one of claims 5 or 6, The main treatment liquid discharge nozzle and the subtreatment liquid discharge nozzle are inclined at an angle of 5 degrees or more and 15 degrees or less with respect to the vertical direction so as to discharge the processing liquid toward the rear under an oblique line in the movement direction when moving by the nozzle moving mechanism. Liquid treatment apparatus which is kept in a closed state. The method according to any one of claims 5 or 6, And an elevating mechanism for elevating the main treatment liquid discharge nozzle and the subtreatment liquid discharge nozzle, The lifting mechanism has a bottom surface of the sub-process liquid ejection nozzle so that the processing liquid applied to the substrate does not overflow from the cross-section when the sub-process liquid ejection nozzle reaches a predetermined position close to the cross-section of the substrate for discharging the process liquid. And a liquid processing apparatus for proximate the vicinity of the cross section. The method according to any one of claims 1 to 3, And the transfer mechanism stops the operation and stops the substrate when applying the treatment liquid onto the substrate. The method according to any one of claims 1 to 3, And the nozzle moving mechanism moves the treatment liquid discharge nozzle in a substantially horizontal direction from 100 mm / sec to 500 mm / sec. Transporting the substrate to a liquid treatment region in which the substrate is approximately horizontal and subjected to liquid treatment; Stopping the conveyance of the substrate in the liquid treatment region or making the conveyance speed of the substrate slower than the substrate conveyance speed to the liquid treatment region; And discharging the processing liquid onto the substrate from the processing liquid discharge nozzle while horizontally moving the processing liquid discharge nozzle for applying the processing liquid onto the substrate to apply the processing liquid to the substrate. . The method according to claim 11, And discharging the processing liquid from a fixed processing liquid refilling nozzle which applies the processing liquid to the substrate while conveying the substrate on which the processing liquid is applied, at a predetermined speed, and further applying the processing liquid to the substrate. The method according to any one of claims 11 or 12, In the step of applying the processing liquid to the substrate, the processing liquid discharge nozzle stops discharging the processing liquid from the processing liquid discharge nozzle when the processing liquid discharge nozzle reaches near the end face of the substrate to finish discharging the processing liquid. And at the same time, bringing the treatment liquid discharge nozzle close to the end face so that the treatment liquid applied on the substrate does not overflow from the end face. The method according to any one of claims 11 or 12, In the step of applying the processing liquid to the substrate, a liquid for applying the processing liquid to the substrate by moving the processing liquid discharge nozzle on the substrate in a substantially horizontal direction a plurality of times while discharging the processing liquid from the processing liquid discharge nozzle. Treatment method. The method according to any one of claims 11 or 12, In the process of applying the treatment liquid to the substrate, the liquid is discharged from the treatment liquid discharge nozzle toward the rear diagonally downward in the moving direction of the treatment liquid discharge nozzle when the treatment liquid discharge nozzle is moved in the substantially horizontal direction. Treatment method. The method according to any one of claims 11 or 12, And in the step of applying the treatment liquid to the substrate, applying the treatment liquid to the substrate using two nozzles as the treatment liquid discharge nozzle. In a liquid processing apparatus which performs development on a substrate subjected to an exposure treatment, A conveying mechanism for conveying the substrate in one direction in a substantially horizontal position; A developer discharge nozzle for discharging a developer onto a substrate surface conveyed by the transfer mechanism; A nozzle moving mechanism for moving the developer discharge nozzle on the substrate at a predetermined speed in a direction opposite to the conveying direction of the substrate; And a developer for discharging the developer from the developer discharge nozzle and applying the developer to the substrate while moving the developer discharge nozzle by the nozzle moving mechanism. The method according to claim 17, And a fixed developer replenishment nozzle for applying the developer to the surface of the substrate to which the developer is applied by the developer discharge nozzle and conveyed by the transfer mechanism. In the liquid treatment method for developing the substrate subjected to the exposure treatment, Conveying the substrate to a developer application region in which the developer is applied at a substantially horizontal posture; Stopping the conveyance of the substrate or making the conveyance speed of the substrate slower than the conveyance speed of the substrate to the developer application region in the developer application region; Discharging the developer from the developer discharge nozzle and dropping the developer onto the substrate while horizontally moving the developer discharge nozzle applying the developer onto the substrate on the substrate; And transporting the substrate on which the developer is removed to a liquid removal processing region for removing the developer. The method according to claim 19, After the step of dropping the developer onto the substrate, before the step of transporting the substrate to the removal treatment region, the developer is transported in a fixed developer refill nozzle for applying the developer to the substrate while transferring the substrate on which the developer is applied at a predetermined speed. Discharging and applying the developer to the substrate.