KR100981212B1 - Liquid processing method and liquid processing apparatus - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing apparatus for supplying a processing liquid to a substrate to perform liquid processing. The present invention relates to a transport path for transporting a substrate in a horizontal direction in a substantially horizontal posture, and to supplying a predetermined processing liquid to a substrate on a transport path. It has a liquid processing part which performs a process, and the drying process part which has one or more steam injection nozzles which inject | pours steam, blows out steam to a board | substrate on the conveyance path downstream of a liquid processing part, and sweeps a liquid from a board | substrate.

According to the present invention, generation of unevenness, residual deposits, watermarks, and the like on the substrate surface after the drying treatment can be suppressed.

Substrate, liquid processing device, conveying path, steam jet nozzle, drying processing part

Description

Liquid treatment method and liquid treatment device {LIQUID PROCESSING METHOD AND LIQUID PROCESSING APPARATUS}

The present invention relates to a continuous line type liquid processing method and a liquid processing apparatus for continuously processing a substrate by flowing in a line.

Recently, in the resist coating and developing system for LCD (liquid crystal display display) manufacturing, as a cleaning method or development method that can advantageously cope with an enlargement of LCD substrates, a conveying roller and a conveying belt are arranged in a horizontal direction on a conveying path. BACKGROUND ART So-called continuous line systems, which carry out developing or cleaning treatments while conveying LCD substrates, continue to spread.

For example, with respect to the developing process, while carrying the substrate in the horizontal direction from the horizontal posture, (1) the developing solution is applied to the surface of the substrate, the developing paddle is formed on the substrate and held for a predetermined time, and the developing reaction is advanced. (2) converting the substrate into an inclined posture and dripping the developer; and (3) cleaning (rinsing) the rinse solution by supplying the rinse solution to the substrate to remove stains of the developer, and (4) from the front side in the substrate transport direction to the rear side. A method of drying a substrate by blowing a rinse liquid on the surface of the substrate by injecting a dry gas such as air onto the substrate using an air knife toward the isolator.

As described above, in the continuous line developing apparatus and the cleaning apparatus, an air knife is used as a tool for drying the substrate by removing the liquid remaining or adhered to the surface of the substrate in the final stage of the processing process. The air knife has a myriad of gas discharge ports or slit-type gas discharge ports that cover from the end to the end of the substrate in the width direction of the conveying path, and a sharp gas flow on the knife with respect to the substrate passing directly below or above a predetermined position (typically For example, the air stream or nitrogen gas stream may be injected. When the substrate passes through the edge of the air knife by the jet of a sharp gas flow on the knife, the liquid on the surface of the substrate is swept away toward the rear end of the substrate and dropped out of the substrate, i.e., it is blown off and the liquid is removed.

However, in such a substrate processing apparatus, the substrate surface dries at a moment with a dry air stream ejected from an air knife, and thus, a micro liquid containing mist and components dissolved on the surface of the substrate immediately after drying. Agglomerates tend to cause stains and residual precipitates on the substrate, and cause defects in the following steps. For example, if a precipitate is formed in the opening of the resist mask formed in the developing step, this becomes an unwanted micro mask in the next step, causing etching failure. In addition, when dry gas is blown to a board | substrate using an air knife, the rinse liquid on the surface of a board | substrate scatters and mist generate | occur | produces, and this mist of the board | substrate with which drying process was previously performed with the dry gas ejected from the air knife was carried out. There is work to attach to some. In this case, there is a problem that watermarks and stains are generated on the part to which the mist is attached and the substrate quality is deteriorated.

The present invention is to solve the problems of the prior art, in the continuous line method to prevent the formation of stains and residual deposits on the substrate surface after the drying treatment to improve the quality of the treatment, and to treat the liquid such as watermarks on the substrate It aims to suppress traces.

In order to achieve the above object, the liquid processing method of the present invention is a liquid processing method of supplying a processing liquid to a substrate to perform the processing, by supplying a predetermined liquid processing to the substrate while conveying the substrate in a substantially horizontal attitude. And a second step of ejecting vapor to the substrate and removing the liquid from the substrate while conveying the substrate in a substantially horizontal posture after the liquid treatment.

In addition, the liquid processing apparatus of the present invention provides a transport path for transporting a substrate in a horizontal direction in a substantially horizontal posture, a liquid processing unit for supplying a predetermined processing liquid to the substrate on the transport path and performing liquid processing, and spraying steam. And a drying treatment section having one or more steam injection nozzles to eject steam from the steam injection nozzles to the substrate on the transport path downstream from the liquid treatment section to remove the liquid from the substrate.

In the present invention, after the liquid treatment, the vapor is ejected from the vapor spray nozzle to the substrate to which the liquid adheres, and the liquid is swept away from the substrate by the pressure of the vapor stream. And the substrate surface is half dried or less dried. Even if the mist adheres to the surface of the half-dried substrate, it is dispersed or diffused and dissolved in the water film, so that no spots are formed. In addition, even if a liquid having an impurity component melts from the surface of the substrate, it does not agglomerate by dispersing in the water film, and no residual precipitate is generated.

According to another aspect of the present invention, the liquid treatment method of the present invention provides a first step of performing a liquid treatment by supplying a predetermined treatment liquid to the substrate while conveying the substrate in a substantially horizontal posture, and the substrate having completed the liquid treatment. The second step of injecting dry gas into the substrate using a gas injection nozzle so that the liquid film of the processing liquid remains on the surface of the substrate while being conveyed in a substantially horizontal posture; And a third step of evaporating the treatment liquid left on the substrate surface.

In another aspect of the present invention, the liquid processing apparatus of the present invention provides a liquid treatment portion for supplying a predetermined processing liquid to the substrate to perform liquid treatment while transporting the substrate in a substantially horizontal position, and spraying dry gas onto the substrate. A drying processing unit for spraying dry gas onto the substrate using the gas injection nozzle while conveying the substrate processed in the liquid processing unit in a substantially horizontal posture having a gas injection nozzle to And an injection amount control device for controlling the flow rate of the dry gas injected from the gas injection nozzle to form a liquid film of the processing liquid.

According to the liquid treatment method and the liquid treatment apparatus according to the above-described aspect of the present invention, the liquid film of the treatment liquid is formed on the surface of the substrate from which the dry gas is ejected by the gas injection nozzle, so that the treatment is generated by spraying the dry gas onto the substrate. Even if the mist of liquid adheres to the substrate, the mist is taken into the liquid film. This prevents the occurrence of watermarks and the like on the substrate. In addition, the amount of static electricity accumulated on the substrate is reduced by the liquid film of the processing liquid formed on the substrate surface, which makes it difficult to damage the substrate. In addition, according to this liquid treatment method, it is not necessary to completely remove the processing liquid on the substrate surface, so that the amount of dry gas blown out of the gas injection nozzle can be reduced.

According to another aspect of the present invention, there is provided a liquid treatment method comprising: a first step of supplying a predetermined treatment liquid to the substrate to perform liquid treatment while conveying the substrate in a substantially horizontal posture; and a substrate having the liquid treatment in a substantially horizontal posture. A second step of removing the processing liquid adhering to the surface of the substrate by injecting dry gas to the substrate using a gas injection nozzle while conveying the substrate surface by supplying water vapor to the surface of the substrate after the second step; And a third step of forming a water film on the substrate, and a fourth step of evaporating water on the surface of the substrate by heat-treating the substrate after the third step.

Moreover, the liquid processing apparatus which concerns on another aspect of this invention has a liquid processing part for supplying a predetermined process liquid to the said board | substrate, conveying a board | substrate in substantially horizontal position, and a liquid process part, and the gas injection nozzle which injects dry gas to a board | substrate. And a drying processing unit for removing the processing liquid adhered to the substrate by injecting dry gas to the substrate using the gas injection nozzle while conveying the processed substrate in the liquid processing unit in a substantially horizontal position. It has a water film formation process part which forms a water film on the surface of the said board | substrate by supplying water vapor | steam to the said board | substrate, conveying the board | substrate which passed through the process part in substantially horizontal posture.

According to the liquid processing method and the liquid processing apparatus concerning these viewpoints, even if the mist which generate | occur | produced when the dry gas was ejected using the gas injection nozzle adheres to the dried board | substrate, the water film | membrane will form uniformly thereafter, Generation of watermarks and the like is suppressed.

According to still another aspect of the present invention, in the liquid processing apparatus of the present invention, a liquid processing portion for supplying a predetermined processing liquid to the substrate for liquid treatment while transporting the substrate in a substantially horizontal posture, and spraying dry gas onto the substrate The processing liquid adhered to the surface of the substrate by spraying dry gas onto the substrate using the gas spray nozzle while conveying the substrate processed in the liquid processing unit in a substantially horizontal posture with a gas spray nozzle to The gas injection nozzle is removed so that the mist of the processing liquid generated by using the gas spray nozzle to the substrate and spraying dry gas on the substrate in the substrate drying unit does not turn to the front side in the substrate conveying direction. It has a partition board which divides the back side space and the front side space of a board | substrate conveyance direction in the installed position.

According to the liquid treatment apparatus of the present invention in view of this aspect, even if the treatment liquid attached to the substrate surface is removed by the dry gas supplied from the gas injection nozzle, the mist does not move to the front side of the substrate transport direction. As a result, mist adhesion to the substrate is prevented.

As described above, according to the present invention, generation of watermarks or the like on the substrate can be prevented and the quality of the substrate can be improved. Moreover, when the liquid film of a process liquid is formed on the surface of a board | substrate, the accumulated amount of normal phase in a board | substrate will reduce, and it becomes difficult to damage a board | substrate by this. In addition, when the processing liquid on the substrate surface is not completely blown in order to form a liquid film on the substrate, it is possible to reduce the amount of dry gas used to reduce the production cost.

Best Mode for Carrying Out the Invention The following describes an optimal embodiment of the present invention. A coating and developing processing system as one configuration example to which the substrate processing method and substrate processing apparatus of the present invention can be applied is shown in FIG. The coating and developing processing system 10 is installed in a clean room, for example, using an LCD substrate as a substrate to be treated, and cleaning, resist coating, prebaking, developing and postbaking during a photolithography process in an LCD manufacturing process. Each processing such as the above is performed. The exposure treatment is performed by an external exposure apparatus 12 provided adjacent to this system.

The coating and developing processing system 10 arranges a horizontally long processing station (P / S) 16 at the center, and has a cassette station (C / S) 14 and an interface station (I /) at both ends of its long life direction (X direction). F; 18) is arranged.

The cassette station (C / S) 14 is a cassette loading / exit port of the system 10, and four cassettes C which can accommodate a plurality of sheets in the horizontal direction, for example, in the Y direction, as if the substrates G are stacked in multiple stages. The cassette stage 20 which can be arranged side by side, and the conveyance mechanism 22 which carry out the taking-out of the board | substrate G with respect to the cassette C on this stage 20 are provided. The conveying mechanism 22 has a means for holding the substrate G, for example, a conveying arm 22a, which is operable in four axes of X, Y, Z and θ, and is adjacent to the processing station ( It is possible to take over the P / S; 16) side and the substrate G.

The processing station (P / S) 16 arranges each processing unit in process flow or process order in a pair of parallel lines and lines A and B extending in the system long life direction (X direction).

More specifically, in the process line A of the upstream portion from the cassette station C / S 14 side to the interface station I / F 18 side, the cleaning process part 24 and the first heat treatment part ( 26, the coating process part 28, and the 2nd heat processing part 30 are arrange | positioned in a horizontal line. On the other hand, in the downstream process line B from the interface station I / F 18 side to the cassette station C / S 14 side, the second heat treatment unit 30, the developing process unit 32, and discoloration are performed. The process part 34 and the 3rd heat processing part 36 are arrange | positioned in a horizontal line. In this line state, the second heat treatment unit 30 is located at the rear of the upstream process line A, and is located at the head of the downstream process B, and spans both lines A and B. As shown in FIG.

An auxiliary transport space 38 is provided between both process lines A and B, and a shuttle 40 capable of horizontally mounting the substrate G in units of sheets is provided in a line direction (X direction) by a driving mechanism (not shown). It is possible to move in both directions.

In the upstream process line A, the cleaning process section 24 is located at the position adjacent to the cassette station C / S 10 in the scrubber cleaning unit SCR 42, and the excimer UV irradiation unit (e-UV: 41). The cleaning unit in the scrubber cleaning unit (SCR) 42 is broached on the upper surface (to-be-processed surface) of the substrate G while conveying the LCD substrate G in the direction of the line A in a horizontal position by the roller conveying unit or the belt conveying unit. It is supposed to perform cleaning and blow cleaning.

The first heat treatment part 26 adjacent to the downstream side of the cleaning process part 24 is provided with a vertical conveying mechanism 46 at the center part along the process line A, and a plurality of units are provided in both front and rear sides thereof. Lamination is carried out. For example, as shown in FIG. 2, the upstream side multi-stage unit (TB) 44 has a substrate transfer side pass unit (PASS) 50, a dehydration bake heating unit (DHP; 52, 54), and an adjunct. Units AD 56 are stacked in order from below. Here, the pass unit PASS 50 is used to take over the scrubber cleaning unit SCR 42 side and the substrate G. In addition, the downstream multistage unit (TB) 48 has a substrate transfer guide unit (PASS) 60, cooling units (CL) 62 and 64, and an adjunct unit (AD) 66 stacked in this order from the bottom. . The pass unit PASS 60 is for taking over the coating process unit 28 side and the substrate G.

As shown in FIG. 2, the conveyance mechanism 46 rotates in the (theta) direction on the lifting carrier 70 which can move up and down according to the guide rail 68 extended in a perpendicular direction, and this lifting carrier 70. As shown in FIG. Or a pivoting carrier 72 which is rotatable, and a carrier arm or tweezers 74 capable of advancing or stretching in the front-rear direction while supporting the substrate G on the pivoting carrier 72. A drive unit 76 for lifting and lowering the lifting carrier 70 is provided on the proximal side of the vertical guide rail 68, and the driving unit 78 for pivoting the swing carrier 72 is a lifting carrier 70. ), A drive unit 80 for advancing and driving the carrier arm 74 is mounted on the rotary carrier 72. Each drive part 76, 78, 80 may be comprised, for example by an electric motor.

The conveying mechanism 46 configured as described above moves up or down at high speed, and is accessible by any of the two-stage unit units TB (44, 48), and the shuttle 40 on the side of the auxiliary conveying space 38 is provided. ) Can also take over the substrate G.

As shown in FIG. 1, the coating process part 28 adjacent to the downstream part of the 1st heat processing part 26 is a resist-coating unit (CT) 82, a pressure reduction drying unit (VD) 84, and an edge remover unit (ER). ; 86) are arranged in a line along the process line (A). Although not shown in the drawing, a conveying apparatus for carrying in and taking out the substrate G one by one in the order of the process is provided in the three process units CT (82; VD: 84, ER; 86). In each unit (CT) 82, VD: 84, ER; 86, each process is performed in units of one substrate.

The second heat treatment portion 30 adjacent to the downstream side of the coating process portion 28 has the same configuration as the first heat treatment portion 26, and has a vertical conveying mechanism between both process lines A and B. 90), one multistage unit section (TB) 88 is installed on the process line (A) side (rear), and the other multistage unit section (TB) 92 on the process line (B) side (front). ) Is being installed.

Although not shown in the drawing, for example, a multi-stage unit (TB) 88 on the side of the process line A is placed with a pass-through delivery unit PASS at the bottom thereof, and a pre-baking heating unit PREBAKE is placed thereon. May be stacked in three tiers, for example. In the multi-stage unit (TB) 92 on the process line (B) side, a substrate transfer guide pass unit (PASS) is placed at the lowermost stage, and the cooling unit (COL) is stacked, for example, on one stage. Pre-baking heating units PREBAKE may be stacked in two stages, for example.

The conveyance mechanism 90 in the second heat treatment part 30 is formed by the coating process part 28 and the developing process part 32 through the pass units PASS of the respective multi-stage unit parts TB 88 and 92. Not only can the substrate G be taken over by one unit, but the shuttle 40 in the auxiliary transport space 38 or the interface station I / F 18 described later also take over the substrate G by one unit. It is intended to lead.

In the downstream process line B, the developing process unit 32 includes a so-called continuous line developing unit DEV 94 for carrying out a series of developing processes while conveying the substrate G in a horizontal posture. Doing.

On the downstream side of the developing process portion 32, the discoloration process portion 34 is wrapped and a third heat treatment portion 36 is disposed. The bleaching process part 34 is provided with the i-ray UV irradiation unit (i-UV) 96 for irradiating i line | wire (wavelength 365nm) to the to-be-processed surface of the board | substrate G, and performing a bleaching process.

The third heat treatment portion 36 has the same configuration as the first heat treatment portion 26 or the second heat treatment portion 30, and the vertical conveyance mechanism 100 and the front and rear thereof along the process line (B). A pair of multi-stage unit parts (TB) 98 and 102 are provided on both sides.

Although not shown, for example, a pass unit PASS is placed at the lowermost stage in the upstream multistage unit section TB, and a heating unit for post-baking POBAKE is, for example, three stages. It is stacked. In addition, a lowermost post-baking unit (POBAKE) is placed in the downstream multi-stage unit (TB) 102, and a first stage pass-pass cooling unit (PASS / COL) for stacking the substrates is delivered and post-baked thereon. The heating unit (POBAKE) may be stacked in two stages.

The conveyance mechanism 100 in the 3rd heat treatment part 36 irradiates i-ray UV through the pass unit PASS and the pass cooling unit PASS and COL of both multi-stage unit parts TB and 98 and 102, respectively. Not only can the unit (i-UV) 96, the cassette station (C / S) 14, and the board | substrate G be acquired by one unit, but the shuttle 40 in the auxiliary conveyance space 38 also has the board | substrate G ) Can be delivered in single sheets.

The interface station (I / F) 18 has a conveying apparatus 104 for exchanging the adjacent exposure apparatus 12 and the substrate G, and has a buffer stage (BUF) 105 and an extension cooling stage around it. (EXT COL) 106 and the peripheral device 110 are arranged.

In the buffer stage BUF 105, a standing buffer cassette (not shown) is placed. The extension cooling stage (EXT / COL) 106 is a substrate taking over stage having a cooling function, and is used when the substrate G is exchanged with the processing station P / S 16 side. The peripheral device 110 may be, for example, a structure in which a titler TITLER and a peripheral exposure device EE are stacked up and down. The conveying apparatus 104 has a conveying means which can hold | maintain the board | substrate G, for example, the conveying arm 104a, and the exposure apparatus 12 and each unit (BUF; 105, EXT, COL; The transfer of the TITLER / EE 110 and the substrate G can be performed.

Fig. 3 shows the processing procedure in this coating and developing processing system. First, in the cassette station (C / S) 14, the conveyance mechanism 22 takes out one board | substrate G from the predetermined | prescribed cassette C on the stage 20, and the processing station P / S; Is carried into the excimer UV irradiation unit (e-UV) 41 of the cleaning process part 24 (step S1).

In the excimer UV irradiation unit (e-UV) 41, the substrate G is subjected to dry cleaning by ultraviolet irradiation (step S2). Ultraviolet cleaning mainly removes organic matter from the substrate surface. After the end of ultraviolet-ray cleaning, the board | substrate G is moved to the scraper cleaning unit (SCR) 42 of the cleaning process part 24 by the conveyance mechanism 22 of cassette station C / S;

In the scrubber cleaning unit (SCR) 42, as described above, the upper surface (feature) of the substrate G is conveyed in a horizontal flow direction in the process line A direction in a horizontal posture by roller conveyance or belt conveyance. The surface of the substrate is blushed or blown to remove particulate contamination from the surface of the substrate (step S3). And after washing, the rinse process is performed while conveying the board | substrate G in a flat stream system, and the board | substrate G is dried using an air knife etc. at last.

The substrate G, which has been cleaned in the scrubber cleaning unit SCR 42, is loaded into the pass unit PASS 50 in the upstream side-stage unit section TB 44 of the first heat treatment unit 26.

In the 1st heat processing part 26, the board | substrate G is rotated by the conveyance mechanism 46, and the predetermined unit is returned in a predetermined sequence. For example, the substrate G is first moved from the pass unit PASS 50 to one of the heating units DHP 52, 54 and subjected to dehydration therefrom (step S4). Next, the substrate G is moved to one of the cooling units COL 62 and 64, where it is cooled to a constant substrate temperature (step S5). Subsequently, the substrate G is moved to the AD unit 56, where it is subjected to a hydrophobic treatment (step S6). After the completion of the hydrophobization treatment, the substrate G is cooled to a constant substrate temperature in one of the cooling units COL 62 and 64 (step S7). Finally, the substrate G is moved to a pass unit PASS 60 belonging to the downstream multi-stage unit part TB 48.

Thus, in the 1st heat processing part 26, the board | substrate G moves arbitrarily between the upstream multistage unit part TB (TB) 44 and the downstream unit part TB (TB) 48 via the conveyance mechanism 46. As shown in FIG. I can do it. The same substrate transfer operation can be performed in the second and third heat treatment units 30 and 36 as well.

The substrate G subjected to the series of thermal or thermal treatments as described above in the first heat treatment part 26 is applied to the coating process part next to the downstream side from the pass PASS 60 in the downstream multistage unit part TB 48. 28, the resist coating unit (CT) 82 is moved.

The substrate G is coated with a resist liquid on the upper surface (to-be-processed surface) of the substrate by the spin coating method, for example, by a resist coating unit (CT) 82, and immediately after the decompression drying unit (VD) 84 next to the downstream side. After drying under reduced pressure, excess (unnecessary) resist on the periphery of the substrate is removed from the edge remover unit (ER) 86 next to the downstream side (step S8).

The substrate G subjected to the resist coating process as described above is transferred to a pass unit PASS belonging to the upstream side multi-stage unit part TB 88 of the second heat treatment part 30 next to the vacuum drying unit VD 84. Take over the argument.

In the second heat treatment unit 30, the substrate G is rotated by the transfer mechanism 90 in a predetermined sequence in a predetermined unit. For example, the substrate G is first moved from the pass unit PASS to one of the heating units PREBAKE, where it is subjected to baking after the resist coating (step S9). Next, the substrate G is moved to one of the cooling units COL, where it is cooled to a constant substrate temperature (step S10). Subsequently, the substrate G is provided with an extension cooling stage EXT COL on the interface station I / F 18 side, with or without the pass unit PASS on the downstream multi-stage unit section TB 92; The argument is passed to 106).

In the interface station I / F 18, the substrate G is carried from the extension cooling stage EXT COL 106 to the peripheral exposure apparatus EE of the peripheral device 110, whereby the substrate G After the exposure to remove the resist attached to the peripheral portion at the time of development is sent to the next exposure apparatus 12 (step S11).

In the exposure apparatus 12, a predetermined circuit pattern is exposed to the resist on the substrate G. After the pattern exposure is completed, the substrate G is returned to the interface station I / F 18 from the exposure apparatus 12 (step S11), and is first loaded into the titler TITLRER of the peripheral apparatus 110. Predetermined information is written in a predetermined portion on the substrate (step S12). Subsequently, the substrate G is returned to the extension cooling stage EXT COL 106. The transfer of the substrate G in the interface station I / F 18 and the exchange of the substrate G with the exposure apparatus 12 are performed by the transfer apparatus 104.

In the processing station P / S 16, the conveyance mechanism 90 receives the substrate G exposed from the extension cooling stage EXT COL 106 in the second heat treatment unit 30, and the process line B Transfer to the developing process unit 32 is carried out through a pass unit PASS in the multi-stage unit section TB 92 on the side.

In the developing process part 32, the substrate G received from the pass unit PASS in the multi-stage unit part TB 92 is loaded into the developing process unit DEV 94. In the developing unit DEV 94, the substrate G is conveyed in a continuous line manner downstream of the process line B, and a series of developing processes of developing, rinsing and drying are performed during the conveying ( Step S13).

The substrate G subjected to the developing process in the developing process part 32 is carried into the decoloring process part 34 on the downstream side, and is subjected to the decolorizing process by i-ray irradiation therein (step S14). The substrate G after the decolorizing treatment is transferred to the pass unit PASS of the upstream side multi-stage unit TB 98 of the third heat treatment unit 36.

In the third heat treatment unit TB 98, the substrate G is first moved from the pass unit PASS to one of the heating units POBAKE, where it is subjected to postbaking (step S15). Next, the board | substrate G is moved to the pass cooling unit PASS * COL in the downstream multistage unit part TB 102, and is cooled by it at predetermined | prescribed board | substrate temperature (step S16). The conveyance of the board | substrate G in the 3rd heat processing part 36 is performed by the conveyance mechanism 100. FIG.

On the cassette station (C / S) 14 side, the conveyance mechanism 22 receives the substrate G which has completed the pre-process of the coating and developing process from the pass cooling unit (PASS / COL) of the third heat treatment unit 36, and receives the received substrate. (G) is accommodated in either cassette C (step S1).

In the coating and developing processing system 10, the present invention can be applied to the developing processing unit (DEV) 94 of the developing process unit 32. 4 to 13, an embodiment in which the present invention is applied to a development processing unit (DEV) 94 will be described.

FIG. 4 schematically shows the overall configuration in the developing processing unit (DEV) 94 according to one embodiment of the present invention. This developing unit (DEV) 94 includes a plurality of modules (M1 to M8) for forming a continuous conveying path 108 extending in the horizontal direction (X direction) along the process line B, for example. It is done by placing them in a row.

The substrate carrying part 110 is constituted by the module M1 located at the most upstream end of the above-described molar ratios M1 to M8, and the developing part 112 is performed by the four modules M2, M3, M4, and M5 that follow. Is constructed, the rinse section 114 is configured in the next module M6, the drying section 116 is configured in the next module M7, and the substrate carrying section (in the last module M8). 118 is configured.

The substrate loading unit 110 is provided with a plurality of liftable lift pins 120 that can be lifted and lowered to receive the substrate G, which is passed from a substrate transport mechanism (not shown), in a horizontal position, and to be transferred onto the transport path 108. It is. The board | substrate carrying out part 118 is also provided with the several lift pins 122 which can move up and down to take the board | substrate G horizontally, and to pass it to the next board | substrate carrying part (not shown).

In more detail, the developing part 112 installs the prewet part 124 in the module M2, installs the developing solution supply part 126 in the modules M3 and M4, and drops the developing solution in the module M5. The unit 128 is installed. The prewet part 124 is movable in both directions along the conveyance path 108 toward the nozzle discharge port to the conveyance path 108, and is a prewet liquid supply nozzle for supplying prewet liquid, for example, pure water, to a board | substrate. One or more PNs are provided. The developing solution supply unit 126 is provided with one or a plurality of developing solution supply nozzles DN which are movable in both directions along the conveying path 108 toward the nozzle discharge port in the conveying path 108. In this configuration example, the developer supply nozzles DNa and DNb that are independently movable for the modules M3 and M4 are provided. The developer dropping portion 128 and the prewet portion 124 are provided with a substrate tilt mechanism 130 for tilting the substrate G. As shown in FIG.

The rinse part 114 is movable in both directions along the conveyance path 108 toward the nozzle discharge port to the conveyance path 108, and the rinse liquid supply nozzle RN for supplying a rinse liquid, for example, pure water, to a board | substrate. One or more of these are provided.

In the drying unit 116, the wafer knife VN according to the present embodiment for removing the liquid (mainly the rinse liquid) attached to the substrate G along the conveying path 108 surrounds the conveying path 108. One or more pairs are provided.

In the developing unit 112, the rinse unit 114, and the drying unit 116, fans 132, 134, 136, and 138 for collecting the liquid dropped under the conveying path 108 are provided, respectively. In the developing section 112, the fans 132 and 134 dedicated to the prewet section 124, the developer supplying section 126, and the developer dropping section 128 are respectively replenished. Under each of the pans 132, 134, 136, and 138, drain pipes 140, 142, 144, and 146 are connected.

As shown in FIG. 10, the conveyance roller 148 which can arrange | position the board | substrate G substantially horizontally is provided in the conveyance path 108 along the process line B at regular intervals. The conveying roller 148 rotates via a transmission mechanism (not shown) by the drive force of an electric motor (not shown), and the board | substrate G is conveyed horizontally from the module M1 to the module M8.

In FIG. 4, the prewet liquid supply nozzle PN, the developer liquid supply nozzles DNa and DNb, and the rinse liquid supply nozzle RN are respectively located above the conveyance path 108 by nozzle injection mechanisms SCP, SCN, and SCR. Is moved in parallel with the conveyance path 108.

5 shows an example of the configuration of the nozzle scanning mechanisms SC (SCP, SCN, SCR). The nozzle scanning mechanism SC is a nozzle carrier body for supporting the movable nozzles N (PN, DNa, DNb, RN) and a nozzle in parallel with the conveying path 108 above the conveying path 108. A guide rail (not shown) for guiding the carrier body 150 and a scan driver 152 for driving the nozzle carrier body 150 to move along the guide rail.

The scan driving unit 152 is coupled to the nozzle carrier 150 via one or more vertical support members 154, and the one or more endless belts 156 are parallel to the guide rails. The drive pulley 158 is operatively coupled to the rotating shaft of the electric motor 162 between (ie parallel to the conveying path 108) the drive pulley 158 and the flow pulley 160. The rotational driving force of the electric motor 162 is converted into the linear movement of the nozzle carrier 150 in the belt longitudinal direction (X direction) via the pulleys 158 and 160 and the belt 156. By controlling the rotational speed of the electric motor 162, the linear movement speed of the nozzle carrier 150 is adjusted to a desired value, and the linear movement of the nozzle carrier 150 is switched by switching the rotational direction of the electric motor 162. You can switch directions.

In the nozzle carrier 150, lift drive units 166 made of, for example, air arc cylinders, such as air cylinders, are mounted on the inner walls of both the left and right sides, and between the left and right pairs of lift drive units 166, for example. , Horizontal support rod 168 made of a hollow tube is laid horizontally. In addition, a cylindrical nozzle (N) in the lower end portion of the vertical support rod (170) made of, for example, a hollow tube extending downward from the center of the horizontal support rod (168) toward the discharge port (n) downwards. It is mounted horizontally. A plurality of through-holes formed at regular intervals in the nozzle length direction in the nozzle N in a range in which the processing liquid can be supplied almost uniformly from one end to the other end of the substrate G in the width direction of the conveying path 108. Alternatively, one or a plurality of slits may be used.

In the nozzle carrier 150, the movable nozzle N can be lifted and lowered through the horizontal support rod 168 and the vertical support pole 170 by the lifting and lowering of the lifting driving unit 170, and the conveying path 108. It is possible to move between the height position for discharging the processing liquid toward the upper substrate G and the height position for evacuating the conveying path 108 while not discharging the processing liquid. An effective processing liquid supply pipe 172 from a processing liquid supply source (not shown) provided outside the transport path 108 is introduced into one end of the horizontal support stand 168. The processing liquid supply pipe 172 is connected to the processing liquid inlet of the nozzle N through the horizontal support rod 168 and the vertical support mount 170.

FIG. 6 shows an appearance of the upper wafer knife VNU in the drying unit 116. As shown, the vapor knife VNU has a horizontally long nozzle body extending over a path that can cover at least one end of the substrate G from the other end in a horizontal direction (horizontal direction) perpendicular to the conveying direction. have. At the tip end (lower end) of the nozzle body, there are formed nozzle holes or jet holes 174 formed of a plurality of through holes or one slit formed at regular intervals extending in the longevity direction of the nozzle. The vapor supply pipe 176 is connected to one or several places on the upper surface of the nozzle body. The vapor pressurized by the vapor supply mechanism 178 (FIG. 7) described later is introduced into the nozzle body of the vapor puff (VNU) through the vapor supply pipe 176, and the vapor | steam is discharged in the ejection opening 174 of the front-end | tip. Is sprayed on the upper surface (to-be-processed surface) of ().

As shown in FIG. 7, in this embodiment, the vapor supply mechanism 178 has a steam generator 180, a gas supply unit 182, and a blower 184. The steam generator 180 uses heating, wind power or ultrasonic vibration, and has means for forcibly evaporating a liquid, for example, pure water. The gas supply unit 182 supplies clean air (or nitrogen gas) at atmospheric pressure or positive pressure. The blower 184 becomes a blower or a fan, for example, receives water vapor from the water vapor generating unit 180 and air from the gas supply unit 182 at the inlet side, and discharges the steam / air mixed gas boosted from the outlet side. . The water vapor / air mixed gas discharged from the outlet side of the blower 184 is supplied to the nozzle body of the vapor knife VNU through the vapor supply pipe 176.

The nozzle body of the vapor knife (VNU) once accumulates the vapor inlet 186 for introducing the vapor / air mixed gas fed from the blower 184 and the vapor / air mixed gas introduced at the vapor inlet 186. The buffer chamber 188 to which it is made, and the cross section which blows out the steam / air mixed gas in this buffer chamber 188 outside, have the taper-shaped blowing part 190. FIG. A rectifying porous plate 192 is mounted in front of the blower 190 in the buffer chamber 188.

By controlling the generation amount or the generation rate of the steam in the steam generator 180, the steam concentration of the steam / air mixed gas injected from the vapor knife VNU can be adjusted. By controlling the discharge pressure or the discharge amount of the blower 184, it is possible to adjust the discharge pressure or the discharge amount of the water vapor / air mixture gas injected from the wafer knife VN.

The lower vapor knife (VNL) may have the same configuration as the upper vapor knife (VNU), and is supplied with a vapor / air mixed gas from a vapor supply mechanism such as the vapor supply mechanism 178 described above, and the outlet port of the tip end is discharged. Water vapor is sprayed on the lower surface (rear surface) of the board | substrate G from the back.

8 and 9 show examples of arrangements of the vapor knives VNU and VNL in this embodiment. In this arrangement, the lower wafer knife VNL is offset downstream from the upper wafer knife VNU in the conveying direction. Both vapor knives VNU and VNL are arranged substantially parallel to each other in a horizontal plane parallel to the conveying direction and at an angle to the left and right transverse directions of the conveying path 108 (FIG. 9), so as to be perpendicular to the conveying direction. Inside, it arrange | positions in the attitude which blows a gas to board | substrate G in the direction counter to a conveyance direction (FIG. 8). In this embodiment, "left" and "right" are based on the conveyance direction (X direction).

Next, the operation in this developing unit (DEV) 94 will be described. The board | substrate carrying-in part 110 receives the board | substrate G by one unit from the board | substrate conveyance mechanism (not shown), and transfers it to the conveyance path 108. As shown in FIG. Since the roller 148 (FIG. 10) which comprises the conveyance path 108 is rotating by the rotational driving force of an electric motor through an electric mechanism as mentioned above, the board | substrate G carried in the conveyance path 108 is located next to it. It is conveyed toward the developing part 112.

In the developing portion 112, the substrate G is first loaded into the prewet portion 124, and, for example, pure or low concentration developer is used as the prewet liquid from the prewet liquid supply nozzle PN during roller conveyance. Squirt. In this embodiment, the upper surface of the substrate G being conveyed while the nozzle PN moves horizontally along the conveying path 108 by the scanning drive of the nozzle scanning mechanism SCP as described above with respect to FIG. 5. The prewet liquid is sprayed toward the surface to be treated. The prewet liquid which is matched with the board | substrate G and scattered out of the board | substrate, or the prewet liquid which did not match with the board | substrate G collects in the prewet liquid pan 132 provided under the conveyance path 108. As shown in FIG.

As shown in FIG. 10A, when the nozzle PN is scanned in a direction opposite to the substrate conveyance direction while discharging the prewet liquid toward the substrate G on the conveyance path 108, At the relative speed (vN + vG), which combines the nozzle scanning speed (vN) and the substrate transport speed (vG), the nozzles (N; PN) are scanned from the front end to the rear end of the substrate (G). Even if the size is large, the entire surface to be treated (resist surface) of the substrate G can be wetted with a prewetting liquid within a short time.

When the substrate G arrives at a predetermined position on the downstream side in the prewet portion 124, the substrate tilt mechanism 130 is operated to lift the substrate G upward from the conveying path 108 and incline backwards. Due to the inclined posture of the substrate G, most of the prewet liquid remaining or adhering on the substrate G flows and falls behind the substrate and is recovered to the prewet liquid fan 132.

The substrate G subjected to the prewet processing as described above in the prewet portion 124 is then carried in the conveying path 108 and carried into the developer supply portion 126. The developer supply unit 126 ejects the developer solution from the developer supply nozzle DNa even while passing through the first module M3, and ejects the developer solution from the developer supply nozzle DNb while passing through the next module M4. Receive. Each developer supply nozzles DNa and DNb move rollers horizontally along the conveying path 108 from above the conveying path 108 by the scanning drive of the nozzle scanning mechanism SCN as described above with reference to FIG. 5. The developing solution is ejected toward the upper surface (to-be-processed surface) of the substrate G being conveyed. The liquid which fell out of the board | substrate G by the ejection of this developing solution collects in the developing solution fan 134 provided under the conveyance path 108. FIG.

Like the prewet part 124 mentioned above, also in the developing solution supply part 126, as shown to FIG. 10 (A), nozzle (DN) discharges developing solution toward the board | substrate G on the conveyance path 108. FIG. ) May be set in a direction opposite to the substrate transport direction. As a result, the nozzle DN scans from the front end to the rear end of the substrate G at a relative speed (vN + vG) of the nozzle scanning speed vN and the substrate transport speed vG. Even if the size is large, the developer can be supplied to the entire surface to be treated (resist surface) of the substrate G within a short time.

In this embodiment, individual developer supply nozzles DNa and DNb and nozzle injection mechanisms SCN are provided for each of the modules M3 and M4, thereby providing a temporal or spatial interval with respect to the substrate G on the conveying path 108. The developer can be supplied multiple times, and the characteristics (concentration, etc.) of the developer can be changed in the first and the second.

In the developing solution supply section 126, the substrate G, which is supplied with the developing solution to the entire surface to be treated as described above, is loaded into the developing solution dropping portion 128 via the conveying path 108 as it is. And when it reaches the downstream predetermined position in the developer dripping part 128, the board | substrate inclination mechanism 130 installed in it will operate, and lifts the board | substrate G from the conveyance path 108, and opens the board | substrate G. In the conveyance direction, the substrate G is inclined so that, for example, the forward direction, that is, the developing solution supply part 126 side for performing the previous step is on the upper side. By this inclined posture, most of the developer that has been thriving on the substrate G flows in front of the substrate, and is collected by the developer fan 134. In this way, the substrate G is inclined so that the developer supply portion 126 side which performs the pre-process is on the upper side, so that the developer fan is inclined at the developer dropped portion 128 and the liquid is removed. The possibility that the liquid which jumped to 134 adheres to the board | substrate G on the developing solution supply part 126 side can be reduced.

The board | substrate G which completed supply and collection | recovery of the above developing solution by the developing part 112 is carried into the rinse part 114 along the conveyance path 108. As shown in FIG. In the rinse section 114, the upper surface of the substrate G being conveyed while the rinse liquid supply nozzle RN moves horizontally along the conveying path 108 by the scanning drive of the nozzle scanning mechanism SCR as described above. A rinse liquid, for example, pure water, is jetted toward the surface to be treated. The rinse liquid dropped out of the substrate G is collected by the rinse liquid fan 136 provided below the conveyance path 108.

Also in the rinse section 114, as shown in FIG. 10A, the direction in which the nozzle RN is scanned while discharging the developing solution toward the substrate G on the conveying path 108 is opposite to the substrate conveying direction. You may set to. As a result, the nozzle RN scans from the front end to the rear end of the substrate G at the relative speed vN + vG, which is the sum of the nozzle scanning speed vN and the substrate transfer speed vG. Even if the size is large, the developer can be supplied to the entire surface to be treated (resist surface) of the substrate G in a short time, and the rinse solution can be quickly replaced (development stop). In addition, a rinse liquid supply nozzle (not shown) for cleaning the back surface of the substrate G may be provided under the conveyance path 108.

In the lease unit 114, the substrate G having completed the lease process as described above is carried into the drying unit 116 via the transport path 108. In the drying unit 116, as shown in Figs. 4 and 8, the substrate upper surface (features) is formed from upper and lower vapor knives VNU and VNL in which the conveying path 108 is provided at a predetermined position with respect to the substrate G to be conveyed. A liquid (mainly a rinse liquid) adhering to the substrate G is swept away (removing the liquid) attached to the substrate G by bringing a knife type sharp vapor stream onto the rear surface).

Here, the operation of the wafer knife mechanism in the drying unit 116 of this embodiment will be described in detail. As shown in FIG. 8, the substrate G passing through both vapor knives VNU and VNL receives a rinse liquid from the rinse processing unit M6 in the previous stage, and a rinse liquid is generally one or several rinse liquids on the upper surface of the substrate. It adheres in the form of two liquid films RU, and many droplets rinse of the rinse liquid are also attached to the lower surface of the substrate.

As shown in FIG. 11A, when the substrate G passes through the upper and lower wafer knives VNU and VNL on the conveying path 108, the upper wafer knives VNU are warped in a direction unfavorable to the conveying direction. Water vapor is sprayed on the upper surface of the substrate G from above the photograph, and the lower wafer knife VNL ejects water vapor on the lower surface of the substrate G from the lower side inclined in the direction distracting from the conveying direction. Then, on the upper surface of the substrate G, as shown in FIG. 11B, the liquid film RU of the rinse liquid resists the surface tension under the pressure of the water vapor so that it can be pushed behind the substrate. At the end it falls outside the substrate, and some of it goes around the bottom of the substrate. In the lower surface of the substrate G, as shown in FIG. 11C, the droplets of the rinse liquid RL are collected at the rear end of the substrate under the pressure of the steam stream, and are almost the same as those returned from the upper surface of the substrate. It pushes out of the board | substrate G from a board | substrate rear end, and it sends out. The liquid pushed out of the substrate G falls into gravity and collects in the fan 138.

As described above, in this embodiment, water vapor is ejected from the wafer knives VNU and VNL with respect to the substrate G having the rinse liquids RU and RL adhered to the surface, and the rinse liquid is swept away on the substrate at the pressure of the steam stream. Since the rinse liquid is swept away, the substrate surface becomes semi-dry or less dry. That is, part of the water vapor blown off to the substrate G is liquefied at the substrate surface, so that even if the rinse liquid is swept away, the substrate surface does not dry out completely but is covered with a very thin water film M. As a result, even in the mist generated by scattering of the rinse liquid, it is dispersed in the water film M even if it is attached to the substrate surface downstream of the wafer knife (VNU, VNL) (front side in the conveying direction), so that staining may occur. none. In addition, the liquid dissolved in the resist film or the base film on the substrate surface, in particular, the upper surface (to-be-processed surface) is also dispersed in the water film M, so that no residual precipitate is formed by aggregation. The water film M on the substrate is easily evaporated even in the air due to ultrathin, and almost disappears after 10 seconds to several tens of seconds by natural drying.

In this embodiment, the liquid on the upper and lower surfaces of the substrate G is collected or swept away by having a positional offset in the conveying direction between the upper and lower vapor knives VNU and VNL. The temporal offset can be given to the liquid crystal, whereby the liquid removal at the rear end of the substrate can be satisfactorily performed, and the liquid retention near the rear end of the substrate can be prevented or reduced.

In addition, in this embodiment, both the wafer knives VNU and VNL are inclined with respect to the left and right transverse directions of the transport path 108 in parallel with each other, so that the upper and lower surfaces of the substrate G are as shown in FIG. In this case, the liquids RU and RL can be collected at the same edge portion (the edge portion on the left side in FIG. 12) at the rear end portion of the substrate to remove the liquid in the diagonal direction (arrow A direction). In that case, as shown by the arrow B, the liquid from the opposite edge part (right corner part) side flows along the board | substrate rear end part, and liquid removal is accelerated by the force of this flow.

The board | substrate G removed the liquid in the drying part 116 is carried in the conveyance path 108 as it is, and is sent to the board | substrate conveyance part 118. The substrate carrying part 118 has the same configuration as the substrate carrying part 110, and operates in the same manner as the substrate carrying part 110, with the substrate carrying direction being reversed in the carrying in and taking out. In other words, the lift pins 122 for the substrate takeover are waited at a lower position than the conveying path 108, and the substrate G waits for the substrate G to flow from the upstream side (drying section) 116, and the substrate G is lift pins ( When it arrives at the predetermined position immediately above 122, the lift pin 122 is pushed upward, and the substrate G is lifted horizontally and passed to the next substrate transport mechanism (not shown).

The board | substrate G carried out from the board | substrate carrying-out part 118 is sent to the 3rd heat processing part 36 after receiving the decolorization process by i-ray irradiation in the decolorization process part 30 of the downstream side. As described above, the third heat treatment unit 36 receives the post-baking from the heating unit POBAKE. Therefore, even when the water film M still remains on the substrate G at the time when it is brought into the third heat treatment unit 36, the substrate surface is forcedly dried by heat treatment (post baking). Therefore, even if liquid removal is not enough in the drying part 116, that is, even if a relatively thick liquid film remains on the board | substrate G, it does not interfere in particular.

In this developing processing unit (DEV) 94, the prewet part 124, the developer supply part 126, and the developer dropping part are transported on the conveying path 108 in a line with a plurality of substrates G at a predetermined interval. Each processing is sequentially performed by the rinse section 114 and the drying section 116, and a so-called pipeline system can realize a high efficiency or high throughput development process.

In particular, the prewet part 124, the developer supply part 126, and the rinse part 114 supply nozzles for supplying processing liquid (prewet liquid, developer, and rinse liquid) to the substrate G on the conveying path 108 ( By scanning PN, DNa, DNb, and RN along the conveying path 108 above the conveying path 108, even if the size of the substrate G is large, even if the conveying speed of the conveying path 108 is not high, the entire surface of the substrate to be treated It is possible to supply the treatment liquid quickly and in a short time without leaving any problem. In particular, in the developing solution supplying step, the time difference in supplying the processing liquid between one end (leading end) and the other end (back end) in the conveying direction of the substrate G, that is, the time difference at the start of developing, can be made as short as possible. In-plane uniformity can be improved.

In addition, in the nozzle scanning mechanism SC of this embodiment, since the nozzle N can be bidirectionally scanned along the conveyance path 108, as shown in FIG. It is also possible to supply the processing liquid Q to the whole to-be-processed surface of the board | substrate G, scanning in the same direction as a board | substrate conveyance direction. In this case, it is necessary to set the nozzle scanning speed vN 'to a speed larger than the substrate conveyance speed vG.

In this embodiment, the prewet portion 124 and the developer supply portion 126 are configured to perform the spraying development. However, it is easy to change to the paddle method, and the developer supply nozzles DNa and DNb in the developer supply unit 126 may be replaced with a spray-type discharge structure. In the paddle system, the prewet portion 124 is not necessary.

In the developing solution supply part 126, the structure which omits either one (usually downstream DNb) of the developing solution supply nozzles DNa and DNb is also possible. In addition, the scanable range of each movable nozzle N on the conveyance path 108 may be set to the range exceeding 1 module M, and the structure which the adjacent movable nozzles can mutually enter a common guide rail is carried out. You can also do

In the above-described embodiment, various modifications are possible in addition to the above. For example, as shown in FIG. 13, the front wafer knives VNU and the lower wafer knives VNL have no offset and are overlapped in the vertical direction, that is, the front of the conveying path 108. The configuration which arrange | positions in the position (wraps the conveyance path 108 and the opposite position) is also possible. In addition, as shown in FIG. 14, the conventional air knife EN which blows dry air or nitrogen gas can also be used for liquid removal of the board | substrate G. Although not shown in the drawings, a partition wall plate for preventing the diffusion of mist can be provided immediately downstream of the wafer knife VN, or a separate air knife mechanism for promoting drying of the substrate can be provided. .

Moreover, the structure which uses a stationary nozzle in part or all of the prewet part 124, the developing solution supply part 126, and the rinse part 114 is also possible. It is also possible to divide the drive system of the conveyance path 108 into several in the conveyance direction, and to independently control the conveyance operation (speed, stop etc.) on each divided conveyance path. The conveyance path 108 is not limited to a roller conveyance type | mold, but the belt conveyance type | mold formed by laying a pair of belt in a horizontal direction at regular intervals is also possible.

Although the embodiment described above relates to a developing unit or a developing apparatus, the present invention can be applied to substrate processing apparatuses other than the developing apparatus. For example, in the above-described coating processing system, the cleaning process unit 24 is provided. It is also applicable to the scrubber cleaning unit (SCR) 42. That is, the same drying process as in the above embodiment can be performed on the downstream side of the rinse processing unit on the conveying path in the scrubber cleaning unit (SCR) 42. In addition, the present invention can be applied to any liquid removal in addition to the rinse liquid, and liquids other than pure water can be used as the steam source. The substrate to be treated in the present invention is not limited to the LCD substrate, and can be applied to any substrate to be treated that requires liquid removal or drying.

In the substrate treating apparatus of the present invention, preferably, the drying treatment unit has steam generating means for generating vapor by evaporating a predetermined liquid, and boosting means for mixing the vapor generated by the steam generating means with other gases to increase the pressure. Okay. In this case, by controlling the amount of steam generated in the steam generating means or the mixing rate with the generated rate or other gas (for example, air or nitrogen gas), the concentration of the steam blown to the substrate can be adjusted. In addition, by controlling the discharge pressure in the boosting means, it is possible to adjust the pressure of steam blown out on the substrate.

Moreover, as one preferable example of this invention, a drying process is the 1st steam injection nozzle which blows steam to the upper surface of a board | substrate from the upper side of a conveyance path at a 1st position, and is directly at a 1st position along a conveyance path. It is good also as a structure which has the 2nd steam injection nozzle which blows off steam on the lower surface of a board | substrate from the bottom of a conveyance path in a 2nd position of a downstream side. In such a configuration, there is a positional offset in the conveying direction between a pair of vapor spray nozzles that surrounds the conveying path and is arranged up and down, thereby providing a time offset for collecting or sweeping the liquid on the upper and lower surfaces of the substrate. This makes it possible to satisfactorily remove the liquid at the rear end of the substrate, thereby preventing or reducing the retention of the liquid near the rear end of the substrate. As still another preferred example, the first and second vapor injection nozzles may be arranged in parallel with each other and at an angle to the left and right transverse directions of the conveying path. According to this configuration, the liquid is collected on the same right side of the rear end of the substrate on the upper and lower surfaces of the substrate, so that the liquid can be effectively removed in the diagonal direction.

Further, in the drying treatment unit, a configuration in which a vapor spray nozzle for performing a liquid treatment on the lower surface or the rear surface of the substrate may be switched to a gas spray nozzle that ejects a gas (for example, air or nitrogen gas) other than steam. .

In the present invention, for example, after the liquid treatment, the vapor is ejected from the steam injection nozzle to the substrate to which the liquid adheres, so that the liquid is swept away from the substrate at the pressure of the vapor stream. A thin liquid film is formed on the surface of the substrate so that it becomes half or less dry. Even if mist adheres to the surface of the substrate in the half dried state, it is dispersed or diffused in the water film to dissolve, so that spots are not formed. In addition, even if a liquid having an impurity component melts on the surface of the substrate, it is also dispersed in the water film, so that there is no aggregation and no residue is generated.

In the present invention, since the liquid film formed at the position where the liquid on the substrate is wiped out is thin, it easily evaporates even in the air, and disappears in a relatively short time by natural drying. First of all, the liquid remaining on the substrate may be forcibly evaporated in the subsequent heat treatment.

In the liquid treatment apparatus of the present invention, preferably, the drying treatment includes steam generating means for generating vapor by evaporating a predetermined liquid, and boosting means for mixing the vapor generated by the steam generating means with another gas to increase the pressure. good. In this case, it is possible to adjust the concentration of the steam blown to the substrate by controlling the amount of steam generated in the steam generating means or the mixing rate with the generated rate or the gas (for example, air or nitrogen gas). In addition, by controlling the discharge pressure in the boosting means, the pressure of the steam blown to the substrate can be adjusted.

Moreover, as a preferable example of this invention, the 1st steam injection nozzle which blows steam to the upper surface of a board | substrate from the upper part of a conveyance path at a 1st position, and is located just downstream from a 1st position along a conveyance path It is good also as a structure which has the 2nd steam injection nozzle which blows off steam on the lower surface of a board | substrate under a conveyance path in a 2nd position. In such a configuration, a time offset for sweeping or sweeping of liquids on the upper and lower surfaces of the substrate is provided by providing a positional offset in the conveying direction between the pair of vapor spray nozzles that surround the conveying path and are arranged up and down. By doing so, it is possible to satisfactorily remove the liquid at the rear end of the substrate, thereby preventing or reducing the residual of the liquid near the rear end of the substrate.

Moreover, as another preferable example of this invention, you may arrange | position the 1st and 2nd vapor-jet nozzles in parallel with each other, and inclined with respect to the left-right horizontal direction of a conveyance path. According to this configuration, the liquid can be collected on the upper and lower surfaces of the substrate toward the same right corner of the rear end of the substrate, and the liquid can be effectively removed in the diagonal direction.

Further, in the drying treatment unit, a configuration in which the steam spray nozzle for removing the liquid on the lower surface or the rear surface of the substrate may be switched to a gas spray nozzle for ejecting gas other than steam (for example, air or nitrogen gas). .

As described above, according to the substrate processing apparatus of the present invention, in the continuous line system, steam can be ejected to the substrate to be treated after the liquid treatment, the liquid on the substrate is swept away, and the substrate surface can be dried in a semi-dry state. In addition, it is possible to effectively prevent stains or residues on the surface of the substrate after the drying treatment, and to improve the quality of the treatment.

Next, another Example of this invention is described. 15 is a plan view showing a schematic configuration of a coating and developing processing system 300 employing an embodiment of the present invention.

The main configuration of the entire coating and developing treatment system 300 is the same as the coating and developing treatment system 10 described above.

That is, the coating and developing processing system 300 is configured to take over the substrate G between the cassette station (import / export unit) 201, the processing station (process unit) 202, and the exposure apparatus 204. An interface station (interface part) 203 is provided. In Fig. 15, the longevity direction of the resist coating and development processing system 300 is the X direction, and the direction orthogonal to the X direction on the plane is the Y direction.

The cassette station 201 is provided with a conveying apparatus 211 for carrying in and out of the substrate G between the processing stations 202. The conveying apparatus 211 has a conveying arm 211a and can move on the conveying path 210 provided along the Y direction which is the arrangement direction of the cassette C. As shown in FIG.

The processing station 202 has lines A and B. From the cassette station 201 side toward the interface station 203 side along the line A, the scrubber cleaning unit (SCR) 221, the first heat treatment unit 226, the resist treatment unit 223, and the second heat treatment unit 227 is arranged. Along the line B, from the interface station 203 side to the cassette station 201 side, the second heat treatment unit 227, the developing processing unit (DEV) 224, the i-ray UV irradiation unit (i-UV; (225) ) And the third heat treatment portion 228 are arranged.

An excimer UV irradiation unit (e-UV) 222 is provided on a part of the scrubber cleaning processing unit (SCR) 221. An excimer UV irradiation unit (e-UV) 222 is installed to remove organic matter from the substrate G prior to scrubber cleaning, and an i-ray UV irradiation unit (i-UV; 225) is subjected to decolorization treatment of development. It is installed to do.

In the scrubber cleaning processing unit (SCR) 221, the substrate G is conveyed in a substantially horizontal posture, whereby the cleaning process and the rolling process are performed. In addition, as described in detail later, the developing unit (DEV) 224 is configured to carry out the developing solution coating, the cleaning treatment after the development, and the drying treatment while the substrate G is conveyed in a substantially horizontal posture. In these scrubber cleaning processing units (SCR) 221 and development processing units (DEV) 224, the substrate G is conveyed by, for example, roller conveyance or belt conveyance. Also, the transfer of the substrate G to the i-ray UV irradiation unit (i-UV) 225 is continuously performed by the same mechanism as that of the developing unit (DEV) 224.

In the resist processing unit 223, the resist liquid is dropped onto the substrate G held substantially horizontally, and the substrate G is rotated at a predetermined rotational speed to thereby spread the resist liquid over the entire substrate G to form a resist film. The substrate is formed by a resist coating processing apparatus (CT) 223a, a pressure reduction drying apparatus (VD) 223b for vacuum drying the resist film formed on the substrate G, and a solvent discharge head capable of scanning four sides of the substrate G. G) A peripheral resist removal apparatus (ER) 223c for removing excess resist attached to the peripheral edge is arranged in this manual. In the resist processing unit 223, a transfer arm for transporting the substrate G is installed between these resist topographic processing apparatuses (CT; 223a), the reduced pressure drying autonomous (VD; 223b), and the peripheral resist removal apparatus (ER; 223c). It is.

16 is a side view of the first heat treatment part 226. The first heat treatment unit 226 has two heat treatment unit blocks TB (231, 232). The heat treatment unit block (TB) 231 is installed on the scrubber cleaning unit (SCR) 221 side, and the heat treatment unit block (TB; 232) is provided on the resist processing unit 223 side. The 1st conveying apparatus 233 is provided between TB (231,232).

In the heat treatment unit block (TB) 231, a pass unit (PASS) 261 which takes over the substrate G in order from the bottom, and two dehydration bake units (DHP; 262, which performs dehydration bake treatment on the substrate G). 263) and an Advance Treatment Unit (AD) 264 for performing hydrophobization treatment on the substrate G is stacked in four stages. The heat treatment unit block (TB) 232 includes a pass unit (PASS) 265 for taking over the substrate G in order from the bottom, two cooling units (COL) 266 and 267 for cooling the substrate G, and a substrate. An AD treatment unit (268) for performing hydrophobic treatment on (G) is stacked in four stages.

The first conveying apparatus 233 receives the substrate G from the scraper cleaning processing unit SCR 221 through the pass unit PASS 261, and carries in and out of the substrate G between the heat treatment units, and the pass unit. The transfer of the substrate G to the resist processing unit 223 via PASS 265 is performed.

The first conveying apparatus 233 includes a guide rail 291 extending up and down, a lifting member 292 lifting up and down along the guide rail 291, and a base member 293 rotatably mounted on the lifting member 292. ) And a base support arm 294 holding the substrate G on the base member 293 so as to be able to move forward and backward. The lifting and lowering of the lifting member 292 is performed by the motor 295, the turning of the base member 293 is performed by the motor 296, and the forward and backward movement of the substrate support arm 294 is performed by the motor 297. . Thus, the 1st conveying apparatus 233 can move up-and-down, forward-backward and swiveling, and can access any unit of the heat processing unit blocks TB (231,232).

The second heat treatment unit 227 includes two heat treatment unit blocks (TB) 234 and 235 formed by stacking heat treatment units that perform heat treatment on the substrate G. The heat treatment unit block (TB) 234 is provided on the resist processing unit 223 side, and the heat treatment unit block (TB) 235 is provided on the developing process unit block (DEV) 224 side. A second conveying apparatus 236 is provided between these two heat treatment unit blocks TB (234, 235).

17 is a side view of the second heat treatment part 227. In the heat treatment unit block (TB) 234, a pass unit (PASS) 269 which takes over the substrate G in order from the bottom, and three pre-baking units (PREBAKE) 270 which pre-bake the substrate G. , 271, 272) are stacked in four tiers. In the heat treatment unit block (TB) 235, a pass unit (PASS) 273 for taking over the substrate G in order from the bottom, a cooling unit (COL) 74 for cooling the substrate G, and a substrate ( Two pre-baking units (PREBAKE) 275 and 276, which perform the pre-baking process for G), are stacked in four stages.

The second transfer device 236 receives the substrate G from the resist processing unit 223 through a pass unit PASS 269, and carries in and out the substrate G between the heat treatment units, and a pass unit PASS. Acquisition of the substrate G to the development processing unit block DEV 224 through < RTI ID = 0.0 >), and < / RTI > Deliver and receive. In addition, the second conveying apparatus 236 has the same structure as that of the first conveying apparatus 233, and is accessible to any unit of the heat treatment unit blocks TB (234, 235).

The third heat treatment unit 228 has two heat treatment unit blocks (TB) 237 and 238 formed by stacking heat treatment units to be heat-treated on the substrate G. The heat treatment unit block (TB) 237 is provided on the developing processing unit (DEV) 224 side, and the heat treatment unit block (TB) 238 is provided on the cassette station 201 side. A third transfer device 239 is provided between these two heat treatment unit blocks (TB) 237 and 238.

18 is a side view of the third heat treatment part 228. In the heat treatment unit block (TB) 237, a pass unit (PASS) 277 which takes over the substrate G in order from the bottom, and three post-baking units (POBAKE) 278 which post-bake the substrate G. , 279, 280 are stacked in four tiers. In the heat treatment unit block (TB) 238, a post-baking unit (POBAKE) 281, a pass / cooling unit (PASS / COL; 282) for performing transfer and cooling of the substrate G in order from the bottom, and the substrate G The two post-baking units (POBAKE) 283 and 284 which perform post-baking treatment on the) are stacked in four stages.

The third conveying apparatus 239 receives the substrate G from the i-ray UV irradiation unit (i-UV) 225 through the pass unit PASS 277, and carries in the substrate G between the heat treatment units. Taking out and taking over the substrate G to the cassette station 201 via a pass / cooling unit (PASS / COL) 282 is performed. The third conveying apparatus 239 also has the same structure as the first conveying apparatus 233, and can be accessed by any unit of the heat treatment unit blocks TB (237,238).

The space 240 is provided between the lines A and B of the processing station 202. And a shuttle (substrate mounting member) 241 is provided so that this space 240 can be moved slowly. This shuttle 241 is comprised so that holding | maintenance of the board | substrate G is performed, and the delivery of the board | substrate G is performed between the lines A and B via the shuttle 241. Delivery of the substrate G to the shuttle 241 is performed by the first to third transfer devices 233, 236, 239.

The interface station 203 has a conveying apparatus 242, a wafer stage (BUF) 243, and an extension cooling stage (EXT COL) 244, which is a substrate taking over part having a cooling function. In addition, an external device block 245 in which the title TITLER and the peripheral exposure apparatus EE are stacked up and down is provided adjacent to the transfer apparatus 242. The conveying apparatus 242 is provided with the conveying arm 242a, and carrying in / out of the board | substrate G is performed between the processing station 202 and the exposure apparatus 204 by this conveying arm 242a.

In the resist coating and developing processing system 300 configured as described above, first, the substrate G in the cassette C disposed on the mounting table of the cassette station 201 is transferred to the processing station 2 by the transfer device 211. Is directly loaded into the excimer UV irradiation unit (e-UV) 222, and pre-treatment is performed. Subsequently, the substrate G is carried into the scrubber cleaning processing unit (SCR) 221 and scrubber washed. After the scrubber cleaning, the substrate G is carried out to the pass unit PASS 261 of the heat treatment unit block TB 31 belonging to the first heat treatment unit 226 by roller conveyance, for example.

The substrate G disposed on the pass unit PASS 261 is first transported to any one of the dehydration bake units DHP 262 and 263 of the heat treatment unit block TB 231, and then heated. After being conveyed and cooled to any one of the cooling units (COL) 266 and 267 of TB; 232, the adjuvant treatment unit (AD; 264) or the heat treatment unit of the heat treatment unit block (TB; 231) to increase the fixability of the resist. The transfer processing unit (AD) 268 of the block TB 232 is returned to one of the advanced processing units AD 268, where it is advanced by HMDS. Thereafter, the substrate G is conveyed to one of the cooling units COL 266 and 267, cooled, and further conveyed to the pass unit PASS 265 of the heat treatment unit block TB 232. The conveyance process of the board | substrate G at the time of performing such a series of processes is performed by the 1st conveyance apparatus 233 all.

Next, the structure of the development processing unit (DEV) 224 will be described in detail. FIG. 19 is a side view showing a schematic structure of a development processing unit (DEV) 224, and FIG. 20 is a schematic plan view. The development processing unit (DEV) 224 includes an introduction zone (224a), a first developer supply zone ((224b)), a second developer supply zone (224c), and a liquid removal / rinse zone (224d). ), A first rinse zone 224e, a second rinse zone 224f, and a dry zone 224g. The introduction zone 224a is adjacent to the pass unit PASS 273 of the heat treatment unit block TB 235, and the drying zone 224g has an i-UV UV irradiation unit (225). Adjacent to)).

The substrate G is placed on the roller 217 by rotating the roller 217 by driving a motor or the like between the pass unit PASS 273 and the i-ray UV irradiation unit i-UV 225. The roller conveyance mechanism 214 which conveys in a predetermined direction is provided. By operating this roller conveyance mechanism 214, it passes from the pass unit PASS 273 toward the i-ray UV irradiation unit i-UV; 225 through the inside of the developing process unit DEV 224. The board | substrate G can be conveyed in substantially horizontal attitude | position. The roller 217 is provided in predetermined numbers in the conveyance direction (X direction) of the board | substrate G, and the Y direction perpendicular | vertical to this conveyance direction so that curvature etc. may not arise in the board | substrate G.

In addition, the roller conveyance mechanism 214 is not shown in FIG. In the development processing unit (DEV) 224, a plurality of roller conveyance mechanisms 214 that can be driven independently for each processing zone may be provided. For example, the board | substrate G is conveyed by the drive of a 1st motor in the pass unit PASS 273 and the introduction zone 224a, and the 1st developer processing zone ((224b)) and liquid removal are carried out. To / from the rinsing zone 224d by the driving of the second motor, and from the first rinsing zone 224e to the drying zone 224g so as to be conveyed by the driving of the third motor. can do. Such division driving of the roller conveyance mechanism 214 may be performed for each area | region where the conveyance speed of the board | substrate G in the developing process unit (DEV) 224 differs, for example.

The pass unit (PASS) 273 is provided with the lifting pin 216 freely lifting. When the lift pins 216 are raised in a state where the substrate support arm 294 of the second transfer device 236 holding the substrate G enters the pass unit PASS 273, the substrate G becomes the substrate ( G) is taken over from the substrate support arm 294 to the lifting pin 216. Subsequently, when the lifting pin 216 is lowered after the substrate support arm 294 is removed from the pass unit PASS 273, the substrate G is placed on the roller 217 in the pass unit 273. Is wit on. By operating the roller conveyance mechanism 214, the substrate G is carried out from the pass unit PASS 273 to the introduction zone 224a.

The introduction zone 224a is provided as a buffer region between the pass unit PASS 273 and the first developer supply zone ((224b)). The introduction zone 224a prevents contamination of the pass unit PASS 273 due to scattering of the developer from the first developer supply zone ((224b)).

The 1st developing solution supply zone ((224b)) is a zone which performs the liquid (paddle formation) of the first developing solution of the board | substrate G conveyed from the introduction zone 224a. The first developer supply zone ((224b)) includes a main developer discharge nozzle 251a for applying a developer to the substrate G and a sub developer discharge nozzle 251b (hereinafter referred to as a "developing nozzle 251a"). ), (251b)) ", a guide arm 259 extending in the X direction, a slide arm 258 engaged with the guide rail 259, and a slide arm 258 It has a drive mechanism (not shown) which moves to the X direction along the guide rail 259, and the lifting mechanism (not shown) attached to the slide arm 258. As shown in FIG. The developing nozzles 251a and 251b are attached to this elevating mechanism so as to freely elevate and raise them.

The developing nozzles 251a and 251b are supplied with a developer from a developer supply source (not shown). For example, after adjusting the distance between the developing nozzles 251a and 251b by the lifting mechanism and the substrate G, the substrate G is moved in the opposite direction to the conveying direction (251a). The developer is applied to the substrate G by discharging the developing solution from the developing nozzles 251a and 251b to the substrate G while moving the 251b and 251b).

As the developing nozzles 251a and 251b, a slit discharge port is formed in the lower end of the substrate G in the width direction (Y direction) (see Fig. 20), and the slit type discharge port is formed along the long life direction. It is appropriate that the structure can discharge the developer from the discharge port in a substantially annular shape. As the developing nozzles 251a and 251b, for example, a plurality of circular discharge ports may be used instead of a slit type discharge port at predetermined intervals.

In the first developer supply zone ((224b)), the developer overflows from the substrate G while conveying the substrate G, which has grown in liquid, to the liquid removal / rinse zone 224d. You may fall. In the second developer supply zone 224c, a developer is newly added to the substrate G in order to prevent the developing reaction from progressing by the developer falling from the substrate G during the transfer of the substrate G in this way. Apply developer to replenish.

For this reason, the developing solution replenishment nozzle 251c having the same structure as the developing nozzles 251a and 251b is fixed to the second developing solution supply zone 224c so that its long direction becomes the Y direction. It is installed. From the developer replenishment nozzle 251c, a predetermined amount of developer is discharged in a band shape onto the substrate G conveyed by the roller conveyance mechanism 214. However, this second developer supply zone 224c is not essential.

The developing reaction in the substrate G is performed while being conveyed from the first developer supply zone ((224b)) to the liquid removal / rinse zone 224d. On the contrary, in consideration of the time required for the developing reaction, the conveyance speed of the substrate G from the first developer supply zone ((224b)) to the liquid removal / rinse zone 224d is determined.

About the liquid removal / rinse zone 224d, the board | substrate G is changed to the inclined posture, the developer on the board | substrate G is dropped, and the rinse liquid, such as pure water, is made to the surface of the board | substrate G hold | maintained in the inclined posture. It discharges and wash | cleans and flows the developing solution on the board | substrate G. In order to perform such a process, the liquid removal / rinse zone 224d includes a substrate inclination mechanism (not shown) for liquid removal of the developer applied to the substrate G by converting the substrate G into an inclined posture, and an inclination. A rinse nozzle 252 for supplying a rinse liquid (pure) to wash the developer solution to the surface of the substrate G held in a posture, a rinse nozzle arm 287 for holding the rinse nozzle 252, and a rinse nozzle arm ( The guide rail 286 provided in conjunction with the 287 and extended in the conveyance direction of the board | substrate G, and the drive mechanism 288 which moves the rinse nozzle arm 287 along the guide rail 286 are provided.

The rinse liquid is moved from the rinse nozzle 252 to the substrate G while the rinse nozzle 252 is moved from the upper end to the lower end of the substrate G along the surface of the substrate G held in an inclined position by the substrate tilt mechanism. ), The developer remaining on the substrate G is washed away. The movement of the rinse nozzle 252 can be performed at high speed, for example, 500 mm / second, and thus the developer of the substrate G can be removed in a short time.

The rinse nozzle 252 is long in the width direction (Y direction) of the substrate G so that the rinse liquid is widely spread over the entire substrate G by one movement of the rinse nozzle 252. It is better to use a discharge. The rinse liquid may be discharged from the rinse nozzle 252 in a spray shape.

In the liquid removal / rinsing zone 224d, the removal of the developing solution is not complete. Therefore, the substrate G is conveyed in the first rinsing zone 224e and the second rinsing zone 224f. At the same time, the rinse liquid is supplied to the substrate G to thoroughly remove the developer.

A plurality of rinse nozzles 253a are provided in the first rinse zone 224e, and a plurality of rinse nozzles 253b are also provided in the second rinse zone. A predetermined number of rinse nozzles 253a and 253b are provided on the front side and the back side of the substrate G, respectively. The rinse nozzles 253a and 253b are long in the width direction (Y direction) of the substrate G so that the rinse liquid can be discharged to the entire substrate G to be conveyed, and the rinse liquid is discharged in a substantially band shape. It is preferable to use. The first rinse zone 224e and the second rinse zone 224f can be configured as one rinse zone.

In the drying zone 224g through which the board | substrate G which passed the 2nd rinse zone 224f is conveyed, a dry gas is blown out on the surface and the back surface of the board | substrate G, conveying the board | substrate G at a predetermined | prescribed speed | rate, and a board | substrate ( Blow off the rinse liquid attached to G). In order to perform such a process, air is supplied to the air knife 254a and 254b which inject | pours air toward the board | substrate G to be conveyed to the drying zone 224g, and the air knife 254a and 254b. The blower 249, the injection amount controller 247 for controlling the flow rate, flow rate, wind pressure, etc. of the air supplied from the blower 249 to the air knife 254a, 254b, and the air knife 254b. The film thickness sensor 248 which measures the thickness of the liquid film of the rinse liquid (henceforth "water film") formed in the surface of the board | substrate G is provided.

The air knifes 254a and 254b have a shape longer than the width | variety of the board | substrate G, and air can be discharged to the whole width direction of the board | substrate G. The air knives 254a and 254b are mounted so that the longitudinal directions of the air knives 254a and 254b form a predetermined angle with the substrate conveyance direction. As a result, the rinse liquid on the surface of the substrate G is collected at the rear edge by the dry gas discharged from the air knives 254a and 254b and then blown away. It is possible to prevent a large amount of rinse liquid from remaining.

Blowers 249 or blowers 249 and airknifes 254a and 254b are included in order to prevent particles from being included in the air injected from the air knives 254a and 254b toward the substrate G as much as possible. A filter for collecting particles is built into the blower pipe to be connected. The film thickness sensor 248 is capable of measuring the thickness of the water film at a plurality of locations in the Y direction. As the film thickness sensor 248, for example, the change of the interference fringe and refractive index which appear on the surface of the board | substrate G can be used, and a CCD camera can be used.

When dry gas is sprayed on the board | substrate G from the air knife 254a and 254b, a part of the rinse liquid on the surface of the board | substrate G will mist, and this will spread | diffuse into air. After the board | substrate G is completely dried by the air knife 254a and 254b, when the mist returned to the front of the board | substrate conveyance direction adheres to the board | substrate G, watermarks, such as a stain, generate | occur | produce.

In the drying zone 224g, the surface of the substrate G is not completely dried. That is, after the drying gas is sprayed from the air knife 254b provided on the front side of the substrate conveyance direction in the drying zone 224g, the water film is left on the surface of the substrate G. The thickness of the water film is so thin that the rinse liquid does not overflow from the substrate G. For example, the thickness of the water film may be sufficient that the unevenness of the developing pattern formed on the resist film is buried in the water film, and the thickness of the water film may be several micrometers to several tens of micrometers. Moreover, it is preferable that the thickness of this water film | membrane is substantially uniform over the board | substrate G whole.

For the drying zone 224g, the thickness of the water film formed on the substrate G after the drying gas is blown out of the air knife 254b is measured by the film thickness sensor 248, and this measurement result is measured by the injection amount control device. The blowing amount control device 247 controls the blowing amount from the blower 249 to the air knives 254a and 254b so that the thickness of the water film formed on the substrate G becomes a set value. By such feedback control, the thickness of the water film formed on the substrate G can be made constant.

When the water film is left on the substrate G in this manner, even when the rinse liquid mist is reattached to the substrate G, the mist is picked up from the water film, so that the watermark on the substrate G is prevented. In addition, it is preferable not to form such a water film on the back surface of the board | substrate G. It is because the trace of the roller 217 may remain on the back surface of the board | substrate G, and the quality of the board | substrate G may fall when the back surface of the board | substrate G is wet.

When the water film is formed on the surface of the substrate G, it is not necessary to completely blow off the rinse liquid on the surface of the substrate G, so that the amount of dry gas blown out from the air knives 254a and 254b. It is possible to reduce the For example, in the case of using air as the dry gas, when the air is taken from the blower to the air knives 254a and 254b, the operating load of the blower can be reduced. Moreover, since the static electricity accumulation amount of the board | substrate G is reduced by the water film formed in the surface of the board | substrate G, it becomes possible to suppress the damage of the board | substrate G.

After the conditions (air-injection conditions from the air knife 254a, 254b) for forming a water film on the substrate G so as not to generate a watermark on the substrate G are required experimentally or empirically, For example, the thickness measurement of the water film by the film thickness sensor 248 can be confirmed or omitted. In addition, in consideration of the oscillation of the substrate G and the movement of the rinse liquid on the substrate G, using a structure capable of partially changing the flow velocity of the air injected as the air knife 254a and 254b in the long direction, The thickness distribution of the water film formed in the board | substrate G can be made small by changing the flow velocity of the dry gas injected from the air knife 254a and 254b partially.

The board | substrate G in which the drying process in the drying zone 224g was complete | finished is conveyed to the i-ray UV irradiation unit (i-UV) 225 by the roller conveyance mechanism 214. Substrate G is conveyed from there to post-baking units POBAKE 278, 279, 280, etc., and heat-processed, At this time, the water film formed in substrate G is evaporated and removed.

In the above-described processing of the substrate G in the developing unit (DEV) 224, first, the substrate G carried into the pass unit PASS 273 is introduced into the zone by the roller conveyance mechanism 214. 224a) is passed through to the first developer supply zone (224b). The conveyance speed of the board | substrate G from this pass unit PASS 273 to the 1st developing solution supply zone 224b shall be 65 mm / sec, for example.

Next, the first developing solution supply zone 224b is held in a state where the substrate G is stopped at a predetermined position, and the developing nozzles 251a and 251b are, for example, 240 mm / sec. The developer is applied to the surface of the substrate G while moving from the front in the substrate conveyance direction toward the rear at a speed. By controlling the substrate G to be in a stopped state, driving control of the developing nozzles 251a and 251b becomes easy. Moreover, it is stabilized and a developer can be collected on the board | substrate G.

The roller G mechanism 214 is operated to operate the substrate G on which the liquid collection in the first developer supply zone 224b is finished, for example, at a conveyance speed of 46 mm / sec. To the developer supply zone 224c. When the substrate G passes through the second developer supply zone 224c, the developer is replenished on the substrate G from the developer replenishment nozzle 251c and overflows from the substrate G when the substrate G is conveyed. Falling developer is replenished.

The board | substrate G conveyed to the 2nd developing solution supply zone 224c is conveyed to the liquid removal / rinse zone 224d, and converts the board | substrate G to the inclined attitude, and flows the developing solution on the board | substrate C there. In addition, the developer dropped from the substrate G is recovered and provided for reuse. Almost at the same time as the substrate G reaches the predetermined inclination angle, the predetermined rinse liquid is discharged from the rinse nozzle 252 toward the substrate G in a discharge amount of, for example, 20 dm3 / min as a whole. The rinse nozzle arm 87 is moved along the surface of the substrate G at a speed of, for example, 500 mm / second.

Subsequently, the board | substrate G is conveyed to the 1st rinse zone 224e at the conveyance speed of 46 mm / sec, for example, and the surface and back surface of the board | substrate G are conveyed there, conveying the board | substrate G at this conveyance speed. The rinse liquid is discharged to remove the developer attached to the substrate G. The substrate G passing through the first rinse zone 224e is loaded into the second rinse zone 224f and further rinsed there. The conveyance speed of the board | substrate G in the 2nd rinse zone 224f is later than the conveyance speed of the board | substrate G in the 1st rinse zone 224e (for example, 36 mm / sec). It is desirable to. As a result, a more precise rinse treatment can be performed.

The substrate G passing through the second rinse zone 224f is loaded into the drying zone 224g. In the drying zone 224g, for example, a water film having a predetermined thickness is formed on the surface of the substrate G from the air knife 254a and 254b while conveying the substrate G at a conveyance speed of 46 mm / sec. Dry gas is sprayed on the substrate G. The board | substrate G in which the process in the drying zone 224g is complete | finished is conveyed to the i-ray UV irradiation unit (i-UV) 225 by the roller conveyance mechanism 2 l4, and the predetermined ultraviolet irradiation process is performed there. .

Next, another embodiment of the drying zone 224g will be described. Fig. 21 is a side view showing another embodiment of the dry zone 224g (called "dry zone 224g '"), and Fig. 22 is a plan view thereof. The drying zone 224g 'includes a substrate drying processing portion 246a provided on the second rinse zone 224f side and a water film forming processing portion 246b provided on the i-ray UV irradiation unit (i-UV) 225 side. .

The substrate drying processing unit 246a includes air knives 254a and 254b, a blower 249, and an injection amount control device 247. These are the same as those provided in the drying zone 224g shown in FIG. 19, FIG. In the substrate drying processing unit 246a, the air knife 254a, 254b is used to blow out the rinse liquid attached to the substrate G by blowing air to the substrate G. Here, the air may be injected from the air knives 254a and 254b so as to completely blow off the rinse liquid attached to the substrate G. Meanwhile, the air may be formed so that a water film having a predetermined thickness is formed on the surface of the substrate G. You may inject air from the knives 254a and 254b.

The water film formation processing part 246b forms a water film on the surface of the board | substrate G by supplying water vapor | steam to the board | substrate G, conveying the board | substrate G which passed through the board | substrate dry processing part 246a to a substantially horizontal attitude | position. For this reason, the water film forming processing unit 246b uses the film thickness sensor 248 for measuring the thickness of the water film formed on the substrate passing through the substrate drying processing unit 246a and the water film forming unit based on the measurement results of the film thickness sensor 248. A steam supply nozzle 289a for selectively supplying steam to a portion (including a part that is completely dried) whose thickness has not reached a predetermined value, and a steam generator for supplying steam to the steam supply nozzle 289a ( 289b and a steam supply control device 290 for controlling the amount of steam supplied from the steam generator 289b to the steam supply nozzle 289a based on the signal from the film thickness sensor 248. The steam generated by the steam generator 289b is pressurized with nitrogen (N2) and supplied to the steam supply nozzle 289a.

The film thickness sensor 248 is capable of measuring the thickness of the water film at a plurality of locations in the Y direction. The steam generated by the steam generator 289b is pressurized by nitrogen (N2) and supplied to the steam supply nozzle 289a. It is explanatory drawing which showed the supply form of the steam to the steam supply nozzle 289a in more detail. The water vapor supply nozzle 289a is elongated in one direction by a plurality of nozzle members 301 provided with a water vapor discharge port extending in one direction.

In order to inject water vapor separately from the plurality of nozzle members 301, pipes are provided to supply the water vapor to the plurality of nozzle members 301 separately from the steam generator 289b. The pulp 302 is provided. The opening and closing operation of the on-off valve 302 is controlled by the steam supply control device 290. From the steam discharge port provided in the nozzle member 30l, water vapor is sprayed into a cone shower shape, and water vapor is sprayed onto the substrate G.

Fig. 24 is an explanatory diagram (flow chart) showing the treatment step in the drying zone (224g '). First, air is blown out from the air knife 254a, 254b to the board | substrate G, and the rinse liquid is blown off from the board | substrate G. Next, the thickness of the water film formed on the surface of the substrate G is measured by the film thickness sensor 248.

The measurement result by this film thickness sensor 248 shows that the wet state of the surface of the board | substrate G is favorable, that is, the water film of substantially constant thickness is formed in the surface of the favorable board | substrate G, and the film thickness distribution figure of a water film When the constant state is indicated, the substrate G is transferred to the i-ray UV irradiation unit (i-UV) 225 without spraying the water vapor from the water vapor supply nozzle 289a onto the substrate G. Export. On the other hand, the measurement result by the film thickness sensor 248 shows that the wet state of the surface of the substrate G is not good, that is, the water film is not formed at all, or the thickness of the water film reaches a predetermined thickness. When it is not present, or when the film thickness distribution of the water film is irregular, water vapor is sprayed onto the substrate G from the steam supply nozzle 289a, whereby a water film having a predetermined thickness is formed on the substrate G.

At this time, since the water vapor supply nozzle 289a is constituted from the plurality of nozzle members 301, it is possible to separately inject water vapor from each nozzle member 301, so that the result of the measurement of the film thickness sensor 248 On the basis, only a thin section of the water film can exhale water vapor. This makes it possible to reduce the thickness distribution of the water film without increasing the thickness of the entire water film. Thus, the board | substrate G in which the water film was formed is carried out to i-ray UV irradiation knit (i-UV) 225. As shown in FIG.

When the drying zone 224g 'having such a configuration is used, the mist of the rinse liquid generated by the air sprayed from the air knives 254a and 254b is then dried when passing through the substrate drying processing section 246a. Even if it adheres to the board | substrate G thus used, since a water film is formed uniformly after that, generation | occurrence | production of the warm mark resulting from mist can be suppressed.

As the film thickness sensor, one that can move in the Y direction and that can measure the thickness of the water film of the entire substrate G by scanning in the Y direction may be used. Similarly, a vapor supply nozzle may move in the Y direction, and by scanning in the Y direction, water vapor may be selectively supplied to a portion where the thickness of the water film does not reach a predetermined value to form a water film.

Next, another embodiment of the drying zone 224g is described. Fig. 25 is a side view showing another embodiment of the dry zone 224g (hereinafter referred to as "dry zone 224g"), which includes air knives 254a and 254b and air. The blower 249 which supplies air to the knife 254a, 254b is provided, and the air knife 254b of the front side of a board | substrate conveyance direction is provided, and the space of the back side of a board | substrate conveyance direction ( The partition plate 298 which divides the rear space 299a and the front space (front space 299b) is provided.

For this drying zone 224g ", air is first sprayed from the air knife 254a to the board | substrate G. Here, in the board | substrate G, the air sprayed part from the air knife 264 (air knife 254a which passed through) The amount of air injected from the air knife 254a, that is, the amount of air blown from the blower 249 to the air knife 254a, is controlled so that the portion thereof is not completely dried in. The substrate G from the air knife 254a is thereby controlled. Even if the mist of the rinse liquid generated by spraying air into the () is attached to a part of the substrate G which is moving toward the front side of the substrate conveyance direction than the air knife 254a, the water film remains on this part. As a result, the generation of the watermark on the substrate G is prevented.

Air is sprayed from the air knife 264b to the substrate G passing through the air knife 254a. Also in this case, mist of rinse liquid is generated from the substrate G by spraying air from the air knife 254b to the substrate G. However, since air is injected from the air knife 254b toward the inclination rearward, The mist diffuses into the rear space 299a without gaping through the gap between the air knife 254b and the substrate G, and into the rear space 299a, and since the mist has a partition plate 298, the rear space 299a From the front space 299b. In this way, while the board | substrate G is completely dried using air knife 254a and 254b, adhesion of the mist to the board | substrate G can be prevented.

As mentioned above, although another embodiment of this invention was described, this invention is not limited to said form. For example, in the above description, the case where air is used to dry the substrate G in the drying zone 224g has been described. However, the substrate G is dried using other gases, for example, nitrogen gas. You can also In this case, the amount of nitrogen supplied from these nitrogen supply devices to the air knife 254a, 254b using a nitrogen supply device such as a bonbene or a plant piping for nitrogen supply instead of the blower 249 is injected amount control device 247. It is good to control by.

In addition, since pure water is used as a rinse liquid for the above description, the formation of a water mark on the substrate G is prevented by forming a water film on the substrate G. For example, processing liquids other than pure water are used. In the case of carrying out the liquid treatment, the vapor of the treatment liquid may be blown out onto the substrate so that the film of the treatment liquid is formed on the substrate.

This invention is not limited to an LCD glass substrate, but is applied, It is applicable also to liquid processing of glass substrates, semiconductor wafers, and other ceramic substrates used for other uses, and the drying process accompanying them.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the structure of an application and development treatment system applicable to a substrate processing apparatus of the present invention.

FIG. 2 is a side view illustrating a configuration of a heat treatment unit in the coating and developing treatment system of FIG. 1.

3 is a flowchart showing a processing procedure in the coating and developing processing system of FIG. 1.

4 is a side view showing the overall configuration of a developing unit in the embodiment.

5 is a perspective view showing a configuration example of a nozzle scanning mechanism in the embodiment.

It is a perspective view which shows the external appearance of the wafer knife in an Example.

7 is a block diagram showing the configuration of the vapor supply mechanism in the embodiment.

Fig. 8 is a side view showing the arrangement of the wafer knives in the embodiment.

9 is a plan view showing an arrangement configuration of vapor knives in the embodiment.

Fig. 10 is a side view showing the operation of nozzle scanning in the embodiment, Fig. 10 (A) shows a direction in which the scanning direction of the nozzle and a conveyance direction of the substrate are opposite, and (B) shows a direction in which the scanning direction of the nozzle and the conveying direction of the substrate are shown. The state of the same direction is shown, respectively.

Fig. 11 is a side view showing the action of the vapor knife mechanism in the embodiment, Fig. 11 (A) shows the water vapor ejected from the upper and lower surfaces of the substrate, and Fig. 11 (B) shows the liquid film of the rinse from the rear end of the substrate. 11 (C) shows that the rinse liquid almost dropped from the substrate.

It is a top view which shows the effect | action of the wafer knife mechanism in an Example.

It is a side view which shows one modification of the drying part in an Example.

It is a side view which shows one modification of the drying part in an Example.

15 is a schematic plan view of a coating and developing treatment system having another embodiment.

FIG. 16 is a side view showing a first heat treatment part of the coating and developing treatment system shown in FIG. 15.

FIG. 17 is a side view illustrating a second heat treatment unit of the coating and developing treatment system shown in FIG. 15.

FIG. 18 is a side view illustrating a third heat treatment part of the coating and developing treatment system shown in FIG. 15.

Fig. 19 is a side view showing the schematic structure of another embodiment development processing unit.

FIG. 20 is a side view showing the schematic structure of the developing unit shown in FIG. 19. FIG.

21 is a schematic side view showing another embodiment of a drying zone constituting the developing unit.

22 is a schematic side view of the drying zone shown in FIG. 21.

It is explanatory drawing which shows the supply form of the steam to the steam supply nozzle provided in the drying zone shown to FIG. 21 and FIG.

FIG. 24 is an explanatory diagram showing a treatment step in the drying zone shown in FIGS. 21 and 22.

Fig. 25 is a schematic side view showing still another embodiment of a drying zone constituting the developing unit.

Claims (5)

In the liquid processing method of supplying the processing liquid to the substrate and performing the treatment, A first step of supplying a predetermined treatment liquid to the surface of the substrate and carrying out liquid treatment while conveying the substrate in a horizontal attitude; And a second step of injecting dry gas into the substrate using a gas injection nozzle so that the liquid film of the processing liquid remains on the substrate while conveying the substrate in a horizontal posture after the liquid treatment.  In said 2nd process, the thickness of the liquid film formed in the part sprayed by dry gas by the said gas injection nozzle so that the liquid film formed on the said board | substrate becomes a predetermined | prescribed film thickness is measured, and based on the measurement result, the said gas injection nozzle Adjusting the amount of dry gas blown from the liquid treatment method. The method of claim 1, And a third step of evaporating the treatment liquid remaining on the substrate by heat-treating the substrate on which the second step is completed. The method of claim 1, And the thickness of the liquid film formed on the substrate is adjusted by selectively supplying water vapor to a portion where the thickness of the liquid film does not reach a predetermined thickness based on the measurement result of the thickness of the liquid film. A liquid processing apparatus for supplying a processing liquid to a substrate to perform liquid processing, A conveying path for conveying the substrate in a horizontal direction in a horizontal posture; A liquid processing unit for supplying a predetermined processing liquid to the surface of the substrate on the conveying path to perform liquid processing; A drying processing unit having a gas injection nozzle for injecting dry gas into the substrate, and injecting dry gas to the surface of the substrate using the gas injection nozzle while conveying the substrate in which the processing in the liquid processing unit is completed in a horizontal posture; , In the drying treatment section, has a injection amount control device for controlling the flow rate of the dry gas injected from the gas injection nozzle so that the liquid film of the processing liquid is formed on the surface of the substrate, The drying treatment unit, A gas supply mechanism for supplying a predetermined amount of dry gas to the gas injection nozzle; It has a sensor which measures the thickness of the liquid film of the processing liquid formed after the dry gas is blown out from the said gas injection nozzle on the said board | substrate, The injection amount control device, And based on the thickness of the liquid film measured by the sensor, the flow rate of the dry gas supplied from the gas supply mechanism to the gas injection nozzle is adjusted so that the thickness of the liquid film formed on the surface of the substrate becomes a predetermined thickness. Liquid treatment device. The method of claim 4, wherein And a water vapor supply nozzle for selectively supplying water vapor to a portion where the liquid film does not reach a predetermined thickness based on a measurement result of the sensor.

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