JP3837720B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus for processing a substrate to be processed by a flat flow method.
[0002]
[Prior art]
Recently, in a resist coating and developing processing system in LCD (liquid crystal display) manufacturing, as a cleaning method or a developing method that can advantageously cope with an increase in size of an LCD substrate, a transport roller or a transport belt is laid on a transport path in a horizontal direction. A so-called flat-flow method in which development processing or cleaning processing is performed while an LCD substrate is being transported is becoming widespread.
[0003]
In general, in a flat-flow developing device and a cleaning device, an air knife is used as a tool for removing a liquid remaining on or adhering to the surface of a substrate at the final stage of a processing step and drying the substrate. The air knife has countless gas outlets or slit-like gas outlets that cover the substrate from end to end in the left-right width direction of the transport path, and is knife-like with respect to the substrate passing directly below or directly above at a predetermined position. A sharp gas stream (usually an air stream or a nitrogen gas stream). By spraying this knife-like sharp gas flow, when the substrate passes by the air knife, the liquid on the substrate surface is swept out of the substrate so that it is swept to the rear end side of the substrate (that is, the liquid is cut off). )
[0004]
[Problems to be solved by the invention]
However, in the conventional substrate processing apparatus of this type, the substrate surface is dried at once by a dry air current blown from an air knife, so that a mist containing some component adhering to the substrate surface immediately after drying or a component dissolved from the substrate surface Aggregates of minute liquids containing sucrose tend to be spots and residues on the substrate, causing defects in later processes. For example, if a residue is generated in the opening of the resist mask formed in the development process, this becomes an undesired micromask in a later etching process, resulting in an etching failure.
[0005]
The present invention has been made in view of the problems of the prior art, and is a substrate processing method for improving the processing quality by preventing the generation of spots and residues on the substrate surface after the drying process in the flat flow method. It is another object of the present invention to provide a substrate processing apparatus.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a substrate processing apparatus according to the present invention supplies a predetermined processing liquid to a transport path for transporting a substrate to be processed in a horizontal direction in a substantially horizontal posture and the substrate on the transport path. The substrate includes one or a plurality of liquid treatment units that perform liquid treatment and vapor injection nozzles that inject vapor, and spray the vapor onto the substrate from the vapor injection nozzle on the transport path on the downstream side of the liquid treatment unit. A drying processing unit that sweeps out the liquid from above, and the drying processing unit is configured to have a steam injection nozzle that blows steam from above the transport path to the upper surface of the substrate at a first position, and a second position. A gas injection nozzle that blows a gas other than vapor from below the transport path to the lower surface of the substrate.
[0008]
In the substrate processing apparatus of the present invention , a gas other than vapor or a dry gas is blown to the lower surface of the substrate from the gas injection nozzle to drain the back surface of the substrate, and at the same time, against the upper surface of the substrate with the liquid after the liquid processing. In this case, steam is blown from the steam injection nozzle, and the liquid is swept out from the substrate with the pressure of the steam flow. In this case, immediately after the liquid is swept out, the front surface of the substrate is not completely dried, but is covered with a very thin liquid film of the liquid from which the vapor originated, that is, semi-dry or freshly dried It becomes. Even if mist adheres to the semi-dry substrate surface, it will be dispersed or diffused and dissolved in the water film, so that no stain will occur. Further, even if the liquid having an impurity component is dissolved from the substrate surface, it is also dispersed in the water film, so that it does not aggregate and no residue is produced.
[0009]
In the present invention, since the liquid film formed on the trace of the liquid on the substrate is thin, it is easy to evaporate even in the atmosphere and can disappear in a relatively short time by natural drying. However, the liquid remaining on the substrate may be forcibly evaporated by heat treatment in a later process.
[0010]
In the substrate processing apparatus of the present invention, it is preferable that the drying processing unit raises the pressure by mixing the vapor generated from the vapor generating unit by evaporating a predetermined liquid and the vapor generated from the vapor generating unit. Boosting means. In this case, the concentration of steam sprayed onto the substrate can be adjusted by controlling the amount or rate of steam generation in the steam generating means and the mixing ratio with other gases (for example, air or nitrogen gas). Further, by controlling the discharge pressure in the boosting means, the pressure of the steam sprayed on the substrate can be adjusted.
[0012]
Further, a substrate processing method according to another aspect of the present invention includes a first step of performing a liquid processing by supplying a predetermined processing liquid to the front surface of the substrate while conveying the substrate in a substantially horizontal posture; After the liquid treatment, the substrate is transported in a substantially horizontal posture while spraying steam on the front surface of the substrate to sweep the liquid from the front surface of the substrate and simultaneously spraying dry gas on the back surface of the substrate. 2 steps.
In this substrate processing method, the liquid adhering to the substrate by the liquid processing in the first step is swept away by blowing steam on the front surface of the substrate, and dried gas is blown off on the back surface of the substrate. Preferably, in the second step, the front surface of the substrate immediately after the liquid is swept out may be in a dry state. This raw dry state is a state in which an extremely thin liquid film is formed on the front surface of the substrate so as to evaporate in the air in 10 seconds to several tens of seconds by natural drying. However, the liquid remaining on the front surface of the substrate after the second step may be evaporated by heat treatment.
[0013]
According to a preferred aspect of the present invention, the position where the vapor is blown and the position where the dry gas is blown are set so as to be substantially opposite to the substrate. According to another preferable aspect, the position for blowing the drying gas is set so as to be located downstream of the position for blowing the steam in the transport direction. Preferably, the vapor and the dry gas may be sprayed from at least one end to the other end of the substrate in a horizontal direction orthogonal to the substrate transport direction.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
[0015]
FIG. 1 shows a coating and developing treatment system as one configuration example to which the substrate processing method and the substrate processing apparatus of the present invention can be applied. The coating and developing processing system 10 is installed in a clean room, and uses, for example, an LCD substrate as a substrate to be processed, and performs various processes such as cleaning, resist coating, pre-baking, developing, and post-baking in the photolithography process in the LCD manufacturing process. Is. The exposure process is performed by an external exposure apparatus 12 installed adjacent to this system.
[0016]
In the coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and a cassette station (C / S) 14 and an interface station (I / F) are disposed at both ends in the longitudinal direction (X direction). ) 18. The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10 and can accommodate up to four cassettes C which can accommodate a plurality of substrates C in a horizontal direction, for example, in the Y direction by stacking substrates G in multiple stages. A cassette stage 20 and a transport mechanism 22 for loading and unloading the substrate G with respect to the cassette C on the stage 20. The transport mechanism 22 has a means for holding the substrate G, for example, a transport arm 22a, and can be operated with four axes of X, Y, Z, and θ, and the adjacent process station (P / S) 16 side and the substrate G Delivery is now possible.
[0017]
In the process station (P / S) 16, the processing units are arranged in the order of the process flow or process on a pair of parallel and opposite lines A and B extending in the system longitudinal direction (X direction). More specifically, the upstream process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side includes a cleaning process unit 24, a first thermal processing unit 26, and The coating process section 28 and the second thermal processing section 30 are arranged in a horizontal row. On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a second thermal processing unit 30, a development processing unit 32, and a decolorization process are provided. The unit 34 and the third thermal processing unit 36 are arranged in a horizontal row. In this line configuration, the second thermal processing unit 30 is located at the end of the upstream process line A and at the beginning of the downstream process line B, and straddles between both lines A and B. ing.
[0018]
An auxiliary transfer space 38 is provided between the process lines A and B, and a shuttle 40 that can horizontally place the substrate G in units of one sheet is bidirectional in the line direction (X direction) by a drive mechanism (not shown). Can be moved to.
[0019]
In the upstream process line A, the cleaning process unit 24 includes a scrubber cleaning unit (SCR) 42, and an excimer is disposed at a location adjacent to the cassette station (C / S) 10 in the scrubber cleaning unit (SCR) 42. A UV irradiation unit (e-UV) 41 is arranged. The cleaning unit in the scrubber cleaning unit (SCR) 42 performs brushing cleaning or blow cleaning on the upper surface (surface to be processed) of the substrate G while transporting the LCD substrate G in the horizontal direction by roller transport or belt transport. It is like that.
[0020]
The first thermal processing unit 26 adjacent to the downstream side of the cleaning process unit 24 is provided with a vertical transfer mechanism 46 at the center along the process line A, and a plurality of units are arranged in multiple stages on both front and rear sides thereof. is doing. For example, as shown in FIG. 2, the upstream multi-stage unit section (TB) 44 includes a substrate passing pass unit (PASS) 50, dehydrating baking heating units (DHP) 52 and 54, and an adhesion unit. (AD) 56 are stacked in order from the bottom. Here, the pass unit (PASS) 50 is used to transfer the substrate G to the scrubber cleaning unit (SCR) 42 side. In addition, a substrate passing pass unit (PASS) 60, cooling units (CL) 62 and 64, and an adhesion unit (AD) 66 are stacked in order from the bottom on the downstream multi-stage unit section (TB) 48. Here, the pass unit (PASS) 60 is for delivering the substrate G to the coating process unit 28 side.
[0021]
As shown in FIG. 2, the transport mechanism 46 includes a lift transport body 70 that can move up and down along a guide rail 68 that extends in the vertical direction, and a turn that can rotate or swivel in the θ direction on the lift transport body 70. It has a transport body 72 and a transport arm or tweezers 74 that can move back and forth in the front-rear direction while supporting the substrate G on the revolving transport body 72. A drive unit 76 for driving the lifting and lowering conveyance body 70 up and down is provided on the base end side of the vertical guide rail 68, and a driving unit 78 for driving the swiveling conveyance body 72 to rotate is attached to the lifting and lowering conveyance body 70. A drive unit 80 for advancing and retracting 74 is attached to the rotary transport body 72. Each drive part 76,78,80 may be comprised by the electric motor etc., for example.
[0022]
The transport mechanism 46 configured as described above can move up and down or swivel at high speed to access any unit in the multistage unit sections (TB) 44 and 48 on both sides, and the shuttle on the auxiliary transport space 38 side. 40 can also deliver the substrate G.
[0023]
As shown in FIG. 1, the coating process unit 28 adjacent to the downstream side of the first thermal processing unit 26 includes a resist coating unit (CT) 82, a vacuum drying unit (VD) 84, and an edge remover unit (ER). 86 are arranged in a line along the process line A. Although not shown in the drawing, in the coating process section 28, a transport device is provided for loading and unloading the substrates G one by one in the order of the processes in these three units (CT) 82, (VD) 84, and (ER) 86. In each unit (CT) 82, (VD) 84, and (ER) 86, each process is performed in units of one substrate.
[0024]
The second thermal processing unit 30 adjacent to the downstream side of the coating process unit 28 has the same configuration as that of the first thermal processing unit 26, and a vertical type between the process lines A and B. , A multi-stage unit portion (TB) 88 is provided on the process line A side (last), and the other multi-stage unit portion (TB) 92 is provided on the process line B side (lead).
[0025]
Although not shown, for example, in the multi-stage unit section (TB) 88 on the process line A side, a substrate delivery pass unit (PASS) is placed at the bottom, and a pre-baking heating unit (PREBAKE) is placed thereon. For example, three stages may be stacked. In the multi-stage unit section (TB) 92 on the process line B side, a pass unit (PASS) for substrate transfer is placed at the bottom, and a cooling unit (COL) is stacked thereon, for example, one stage above it. In addition, prebaking heating units (PREBAKE) may be stacked in two stages, for example.
[0026]
The transport mechanism 90 in the second thermal processing unit 30 includes the coating process unit 28, the development process unit 32, and the substrate G through the pass units (PASS) of both the multistage unit units (TB) 88 and 92. In addition to delivering in units, the substrate G can also be delivered in units of sheets to the shuttle 40 in the auxiliary transport space 38 and the interface station (I / F) 18 described later.
[0027]
In the downstream process line B, the development process unit 32 includes a so-called flat-flow development unit (DEV) 94 that performs a series of development processing steps while transporting the substrate G in a horizontal posture.
[0028]
A third thermal processing unit 36 is disposed downstream of the development process unit 32 with the decolorization process unit 34 interposed therebetween. The decoloring process unit 34 includes an i-ray UV irradiation unit (i-UV) 96 for performing a decoloring process by irradiating the surface to be processed of the substrate G with i-line (wavelength 365 nm).
[0029]
The third thermal processing unit 36 has the same configuration as that of the first thermal processing unit 26 and the second thermal processing unit 30, and the vertical transport mechanism 100 along the process line B. A pair of multi-stage unit portions (TB) 98 and 102 are provided on both the front and rear sides.
[0030]
Although not shown, for example, in the upstream multi-stage unit section (TB) 98, a pass unit (PASS) is placed at the lowermost stage, and a post-baking heating unit (POBAKE) is stacked, for example, in three stages. It's okay. In the downstream multi-stage unit section (TB) 102, a post-baking unit (POBAKE) is placed at the lowermost stage, and a substrate-passing / cooling unit (PASS / COL) for transferring and cooling the substrate is placed thereon. The heating unit (POBAKE) for post-baking may be stacked in two layers.
[0031]
The transport mechanism 100 in the third thermal processing section 36 includes i-line UV irradiation units (PASS) (PASS) and pass cooling units (PASS / COL) of both multi-stage unit sections (TB) 98 and 102, respectively. i-UV) 96 and cassette station (C / S) 14 and the substrate G can be transferred not only in units of one sheet, but also can be transferred in units of sheets to the shuttle 40 in the auxiliary transport space 38. .
[0032]
The interface station (I / F) 18 includes a transfer device 104 for exchanging the substrate G with the adjacent exposure device 12, and a buffer stage (BUF) 106 and an extension / cooling stage (EXT / COL) around the transfer device 104. 107 and the peripheral device 109 are arranged. The buffer stage (BUF) 106 is provided with a stationary buffer cassette (not shown). An extension / cooling stage (EXT / COL) 107 is a stage for transferring a substrate having a cooling function, and is used when the substrate G is exchanged with the process station (P / S) 16 side. The peripheral device 109 may have a configuration in which, for example, a titler (TITLER) and a peripheral exposure device (EE) are stacked vertically. The transfer device 104 has a means for holding the substrate G, for example, a transfer arm 104a, and transfers the substrate G to and from the adjacent exposure device 12, each unit (BUF) 106, (EXT / COL) 107 , (TITLER / EE) 109. Can be done.
[0033]
FIG. 3 shows a processing procedure in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from a predetermined cassette C on the stage 20, and the excimer of the cleaning process unit 24 of the process station (P / S) 16. It is carried into the UV irradiation unit (e-UV) 41 (step S1).
[0034]
In the excimer UV irradiation unit (e-UV) 41, the substrate G is subjected to dry cleaning by ultraviolet irradiation (step S2). This UV cleaning mainly removes organic substances on the substrate surface. After completion of the ultraviolet cleaning, the substrate G is moved to the scrubber cleaning unit (SCR) 42 of the cleaning process unit 24 by the transport mechanism 22 of the cassette station (C / S) 14.
[0035]
In the scrubber cleaning unit (SCR) 42, as described above, the substrate G is brushed and blown onto the upper surface (surface to be processed) of the substrate G while being transported in a horizontal position in the horizontal direction by roller transport or belt transport. By performing cleaning, particulate dirt is removed from the substrate surface (step S3). After the cleaning, the substrate G is rinsed while being conveyed in a flat flow, and finally the substrate G is dried using an air knife or the like.
[0036]
The substrate G that has been cleaned in the scrubber cleaning unit (SCR) 42 is carried into the pass unit (PASS) 50 in the upstream multistage unit section (TB) 44 of the first thermal processing section 26.
[0037]
In the first thermal processing unit 26, the substrate G is rotated in a predetermined unit by the transport mechanism 46 in a predetermined sequence. For example, the substrate G is first transferred from the pass unit (PASS) 50 to one of the heating units (DHP) 52 and 54, where it undergoes a dehydration process (step S4). Next, the substrate G is transferred to one of the cooling units (COL) 62 and 64, where it is cooled to a constant substrate temperature (step S5). Thereafter, the substrate G is transferred to an adhesion unit (AD) 56, where it is subjected to a hydrophobic treatment (step S6). After completion of the hydrophobic treatment, the substrate G is cooled to a constant substrate temperature by one of the cooling units (COL) 62 and 64 (step S7). Finally, the substrate G is moved to the pass unit (PASS) 60 belonging to the downstream multi-stage unit section (TB) 48.
[0038]
As described above, in the first thermal processing unit 26, the substrate G passes between the upstream multi-stage unit portion (TB) 44 and the downstream multi-stage unit portion (TB) 48 via the transport mechanism 46. You can come and go arbitrarily. The second and third thermal processing units 30 and 36 can perform the same substrate transfer operation.
[0039]
The substrate G that has undergone a series of thermal or thermal processing as described above in the first thermal processing section 26 is adjacent to the downstream side from the pass unit (PASS) 60 in the downstream multistage unit section (TB) 48. Is moved to a resist coating unit (CT) 82 of the coating process unit 28.
[0040]
The substrate G is coated with a resist solution on the upper surface (surface to be processed) by a resist coating unit (CT) 82, for example, by spin coating, and immediately after that, it is subjected to a drying process by a reduced pressure drying unit (VD) 84 adjacent to the downstream side. Then, the unnecessary (unnecessary) resist on the peripheral edge of the substrate is removed by the edge remover unit (ER) 86 adjacent to the downstream side (step S8).
[0041]
The substrate G that has undergone the resist coating process as described above is transferred from the vacuum drying unit (VD) 84 to the pass unit (PASS) belonging to the upstream multi-stage unit section (TB) 88 of the adjacent second thermal processing section 30. Delivered.
[0042]
Within the second thermal processing unit 30, the substrate G is rotated through a predetermined unit by the transport mechanism 90 in a predetermined sequence. For example, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (PREBAKE), where it is subjected to baking after resist coating (step S9). Next, the substrate G is transferred to one of the cooling units (COL), where it is cooled to a constant substrate temperature (step S10). Thereafter, the substrate G passes through the downstream side multistage unit (TB) 92 side pass unit (PASS) or without passing through the interface station (I / F) 18 side extension cooling stage (EXT COL). ) Passed to 107 .
[0043]
In the interface station (I / F) 18, the substrate G is carried from the extension / cooling stage (EXT / COL) 107 to the peripheral exposure device (EE) of the peripheral device 109 , where the resist adhering to the peripheral portion of the substrate G is removed. After receiving an exposure for removal at the time of development, it is sent to the adjacent exposure apparatus 12 (step S11).
[0044]
In the exposure device 12, a predetermined circuit pattern is exposed to the resist on the substrate G. When the substrate G that has undergone pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S11), it is first carried into a titler (TITLRER) of the peripheral device 109 , where a predetermined value on the substrate is obtained. Predetermined information is written in the part (step S12). Thereafter, the substrate G is returned to the extension / cooling stage (EXT / COL) 107 . Transfer of the substrate G in the interface station (I / F) 18 and exchange of the substrate G with the exposure apparatus 12 is performed by the transfer device 104.
[0045]
In the process station (P / S) 16, the transport mechanism 90 receives the exposed substrate G from the extension / cooling stage (EXT / COL) 107 in the second thermal processing unit 30, and the multi-stage unit unit on the process line B side (TB) The image is transferred to the development process unit 32 via the pass unit (PASS) in 92.
[0046]
In the development process unit 32, the substrate G received from the pass unit (PASS) in the multi-stage unit unit (TB) 92 is carried into the development unit (DEV) 94. In the developing unit (DEV) 94, the substrate G is conveyed in a flat flow manner toward the downstream side of the process line B, and a series of development processing steps of development, rinsing, and drying are performed during the conveyance (step S13).
[0047]
The substrate G that has undergone the development process in the development process unit 32 is carried into the decolorization process unit 34 adjacent to the downstream side, where it undergoes a decolorization process by i-line irradiation (step S14). The substrate G that has been subjected to the decoloring process is transferred to the pass unit (PASS) in the upstream multistage unit section (TB) 98 of the third thermal processing section 36.
[0048]
In the third thermal processing section (TB) 98, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (POBAKE), where it is subjected to post-baking (step S15). Next, the substrate G is transferred to a path cooling unit (PASS / COL) in the downstream multi-stage unit section (TB) 102, where it is cooled to a predetermined substrate temperature (step S16). The transport mechanism 100 transports the substrate G in the third thermal processing unit 36.
[0049]
On the cassette station (C / S) 14 side, the transport mechanism 22 receives and receives the substrate G that has completed all the steps of the coating and developing process from the pass cooling unit (PASS COL) of the third thermal processing unit 36. The substrate G is accommodated in any one cassette C (step S1).
[0050]
In the coating and developing processing system 10, the present invention can be applied to the developing unit (DEV) 94 of the developing process unit 32. Hereinafter, an embodiment in which the present invention is applied to a development unit (DEV) 94 will be described with reference to FIGS.
[0051]
FIG. 4 schematically shows the overall configuration of the developing unit (DEV) 94 according to an embodiment of the present invention. The developing unit (DEV) 94 is formed by continuously arranging a plurality of, for example, eight modules M1 to M8 forming a continuous conveyance path 108 extending in the horizontal direction (X direction) along the process line B. .
[0052]
Among these modules M1 to M8, the module M1 located at the most upstream end constitutes the substrate carry-in section 110, the subsequent four modules M2, M3, M4, and M5 constitute the developing section 112, and the next The rinsing unit 114 is configured by the module M6, the drying unit 116 is configured by the next module M7, and the substrate carry-out unit 118 is configured by the last module M8.
[0053]
The substrate carry-in section 110 is provided with a plurality of lift pins 120 that can be moved up and down to receive a substrate G delivered from an adjacent substrate transport mechanism (not shown) in a horizontal position and transfer it onto the transport path 108. Yes. The substrate carry-out unit 118 is also provided with a plurality of lift pins 122 that can be raised and lowered to lift the substrate G in a horizontal posture and hand it over to the adjacent substrate transport mechanism (not shown).
[0054]
More specifically, the developing unit 112 includes a prewetting unit 124 in the module M2, a developing solution supply unit 126 in the modules M3 and M4, and a developing solution dropping unit 128 in the module M5. The pre-wetting unit 124 has a nozzle discharge port directed toward the conveyance path 108 and can move in both directions along the conveyance path 108, and a pre-wetting liquid supply nozzle PN for supplying a pre-wetting liquid such as pure water to the substrate. One or more are provided. The developer supply unit 126 is provided with one or a plurality of developer supply nozzles DN that can be moved in both directions along the transport path 108 with the nozzle discharge port directed toward the transport path 108. In this configuration example, developer supply nozzles DNa and DNb that can move independently for each of the modules M3 and M4 are provided. The developer dropping unit 128 and the prewetting unit 124 are provided with a substrate tilting mechanism 130 for tilting the substrate G.
[0055]
The rinsing section 114 has a nozzle discharge port directed to the transport path 108 and can move in both directions along the transport path 108, and has one rinse liquid supply nozzle RN for supplying a rinse liquid such as pure water to the substrate. Or a plurality are provided.
[0056]
In the drying unit 116, a pair or a plurality of vapor knives VN according to the present embodiment for draining off the liquid (mainly rinse liquid) adhering to the substrate G along the transport path 108 are provided across the transport path 108. It has been.
[0057]
In the developing unit 112, the rinse unit 114, and the drying unit 116, pans 132, 134, 136, and 138 for collecting the liquid that has fallen under the conveyance path 108 are provided. In the developing unit 112, more specifically, the prewetting unit 124, the developer supply unit 126, and the developer dropping unit 128 are respectively provided with dedicated pans 132 and 134. A drainage port is provided at the bottom of each pan 132, 134, 136, 138, and drainage tubes 140, 142, 144, 146 are connected thereto.
[0058]
As shown in FIG. 10, transport rollers or rollers 148 on which the substrate G can be placed almost horizontally are laid along the process line B in the transport path 108 at regular intervals. A roller 148 is rotated by a driving force of an electric motor (not shown) via a transmission mechanism (not shown), so that the substrate G is conveyed from the module M1 to the module M8 in the horizontal direction.
[0059]
Parallel 4, prewetting liquid supply nozzle PN, the developing solution supply nozzle DNa, DNb and rinsing liquid supply nozzle RN, the nozzle scanning mechanism SC _P respectively, the conveying path 108 above the conveying path 108 by the SC _N and SC _R To move to.
[0060]
Figure 5 shows a nozzle scanning mechanism _{SC (SC P, SC N,} SC R) an example of the configuration of a. This nozzle scanning mechanism SC includes a nozzle carrier 150 having an inverted U-shaped cross section for supporting the movable nozzle N (PN, DNa, DNb, RN), and a nozzle parallel to the conveyance path 108 above the conveyance path 108. It has a guide rail (not shown) for guiding the carrier 150 and a scanning drive unit 152 that drives the nozzle carrier 150 so as to move along the guide rail.
[0061]
For example, the scanning drive unit 152 includes one or a plurality of endless belts 156 coupled to the nozzle conveyance body 150 via one or a plurality of vertical support members 154 in parallel with the guide rail (that is, with the conveyance path 108). In parallel, it is bridged between the drive pulley 158 and the idle pulley 160, and the drive pulley 158 is operatively connected to the rotating shaft of the electric motor 162. The rotational driving force of the electric motor 162 is converted into a straight movement of the nozzle carrier 150 in the belt length direction (X direction) via the pulleys 158 and 160 and the belt 156. By controlling the rotation speed of the electric motor 162, the linear movement speed of the nozzle carrier 150 can be adjusted to a desired value, and by switching the rotation direction of the electric motor 162, the linear movement direction of the nozzle conveyance body 150 can be switched. .
[0062]
In the nozzle carrier 150, elevating drive units 166 made of actuators such as air cylinders are attached to the inner walls on the left and right side surfaces, respectively, and a horizontal tube made of a hollow tube, for example, between these left and right elevating drive units 166. A support rod 168 is stretched horizontally. A cylindrical movable nozzle N is horizontally attached to the lower end portion of a vertical support rod 170 made of, for example, a hollow tube, extending vertically downward from the central portion of the horizontal support rod 168 with the discharge port n facing downward. ing. The discharge ports n of the nozzles N may be through-holes formed at regular intervals in the longitudinal direction of the nozzle within a range in which the processing liquid can be supplied almost uniformly from one end to the other end of the substrate G in the width direction of the transport path 108. There may be one or more slits.
[0063]
Within the nozzle carrier 150, the movable nozzle N can be raised and lowered via the horizontal support rod 168 and the vertical support rod 170 by the elevation drive of the elevation drive unit 170, and is processed toward the substrate G on the conveyance path 108. It can be moved up and down between a height position for discharging the liquid and a height position for retreating from the transport path 108 while not discharging the processing liquid. A flexible processing liquid supply pipe 172 from a processing liquid supply source (not shown) installed outside the conveyance path 108 is drawn into one end of the horizontal support rod 168. The processing liquid supply pipe 172 is connected to the processing liquid inlet of the nozzle N through the horizontal support rod 168 and the vertical support rod 170.
[0064]
6 shows the appearance of the upper Bepanaifu VN _U in the drying section 116. As shown, Bepanaifu VN _U is the horizontal direction (lateral direction) at least oblong nozzle body in an elongated shape extending over a length that can cover from one end of the substrate G to the other end in the perpendicular to the conveying direction Have. At the tip (lower end) of the nozzle body, there are formed a nozzle port or a spout 174 made up of a large number of through-holes or one slit formed at regular intervals extending in the nozzle longitudinal direction. A vapor supply pipe 176 is connected to the upper surface of the nozzle body at one or several places. Described later vapor supply mechanism 178 steam pressurized from (Fig. 7) is introduced into the nozzle body of Bepanaifu VN _U via the vapor supply pipe 176, the upper surface (target surface of the steam substrate G from spout 174 of the tip ).
[0065]
As shown in FIG. 7, the vapor supply mechanism 178 in this embodiment includes a water vapor generation unit 180, a gas supply unit 182, and a blower 184. The water vapor generation unit 180 has means for forcibly evaporating a liquid, for example, pure water, using heating, wind power, ultrasonic vibration, or the like. The gas supply unit 182 supplies clean air (or nitrogen gas) at normal pressure or positive pressure. The blower 184 is made of, for example, a blower or a fan, takes in water vapor from the water vapor generation unit 180 and air from the gas supply unit 182 to the inlet side, and discharges the water vapor / air mixed gas whose pressure is increased from the outlet side. Steam / air mixture gas discharged from the outlet side of the blower 184 is supplied to the nozzle body of Bepanaifu VN _U through the inside of vapor supply pipe 176.
[0066]
The nozzle body of Bepanaifu VN _U includes a vapor inlet port 186 for introducing the steam / air mixture gas pressure-fed from the blower 184, a buffer chamber for temporarily storing the steam / air mixture gas introduced from the vapor inlet port 186 188 And a jet section 190 having a tapered section that blows out the water vapor / air mixed gas in the buffer chamber 188 to the outside. A rectifying perforated plate 192 is attached in front of the ejection portion 190 in the buffer chamber 188.
[0067]
By controlling the amount of generated or generation rate of water vapor in the steam generator 180 may adjust the water vapor concentration of water vapor / air mixture gas ejected from Bepanaifu VN _U. Further, by controlling the discharge pressure or discharge amount of the blower 184, the discharge pressure or discharge amount of the water vapor / air mixed gas injected from the vapor knife VN can be adjusted.
[0068]
Lower Bepanaifu VN _L also may have the same configuration as the upper Bepanaifu VN _U, supplied with the same vapor supply mechanism from the steam / air mixture gas and vapor supply mechanism 178 described above, the steam from the spout tip It sprays on the lower surface (back surface) of the substrate G.
[0069]
8 and 9 show examples of arrangement configurations of the vapor knives VN _U and VN _L in the present embodiment. In this arrangement, it takes the form of placing is offset to the downstream side of the lower Bepanaifu VN _L than the upper Bepanaifu VN _U in the transport direction. Both vapor knives VN _U and VN _L are arranged substantially parallel to each other in a horizontal plane parallel to the transport direction and obliquely inclined with respect to the lateral direction of the transport path 108 (FIG. 9), and are perpendicular to the transport direction. In the plane, the gas is blown to the substrate G in a direction opposite to the transport direction (FIG. 8). In this embodiment, “left” and “right” are based on the transport direction (X direction) as the reference (front).
[0070]
Next, the operation of the developing unit (DEV) 94 will be described. The substrate carry-in unit 110 receives the substrates G from the adjacent substrate transport mechanism (not shown) one by one and transfers them to the transport path 108. Since the rollers 148 (FIG. 10) constituting the transport path 108 are rotated by the rotational driving force of the electric motor via the transmission mechanism as described above, the substrate G placed on the transport path 108 is immediately adjacent to the developing unit 112. It is conveyed toward.
[0071]
In the developing unit 112, the substrate G is first carried into the prewetting unit 124, and, for example, pure water or a low concentration developer is sprayed as a prewetting liquid from the prewetting liquid supply nozzle PN during roller conveyance. In this embodiment, toward the upper surface (surface to be processed) of the substrate G being conveyed while moving horizontally along the nozzle PN conveying path 108 by the scanning driving of the nozzle scanning mechanism SC _P as described above per 5 Spray prewetting liquid. The prewetting liquid that has splashed out of the substrate upon hitting the substrate G or that has not hit the substrate G is collected by the prewetting liquid pan 132 installed under the transport path 108.
[0072]
As shown in FIG. 10A, when the direction in which the nozzle PN is scanned while discharging the prewetting liquid toward the substrate G on the transport path 108 is set in the direction opposite to the substrate transport direction, the nozzle scanning speed The nozzle N (PN) scans from the front end to the rear end of the substrate G at a relative speed (v _N + v _G ) obtained by adding v _N and the substrate transport speed v _G , even if the size of the substrate G is large. The entire surface to be processed (resist surface) of the substrate G can be wetted with the prewetting liquid in a very short time.
[0073]
When the substrate G arrives at a predetermined position on the downstream side in the pre-wetting unit 124, the substrate tilting mechanism 130 operates to lift the substrate G above the transport path 108 and tilt it backward. Due to the inclined posture of the substrate G, most of the prewetting liquid remaining on or adhering to the substrate G flows down to the rear of the substrate and is collected in the prewetting liquid pan 132.
[0074]
The substrate G that has been subjected to the pre-wetting process as described above in the pre-wetting unit 124 is then carried on the transport path 108 and carried into the developer supply unit 126. In the developer supply unit 126, the developer is sprayed from the developer supply nozzle DNa while passing through the first module M3, and the developer is sprayed from the developer supply nozzle DNb while passing through the next module M4. Each developer supply nozzle DNa, DNb the substrate G of the roller being conveyed while moving horizontally along the conveying path 108 above the conveying path 108 by the scanning driving of the nozzle scanning mechanism SC _N as described above per 5 A developing solution is sprayed toward the upper surface (surface to be processed). The liquid that has fallen out of the substrate G due to the spraying of the developing solution is collected and collected by the developing solution pan 134 installed under the transport path 108.
[0075]
Similar to the pre-wetting unit 124 described above, the developer supply unit 126 also scans the nozzle DN while discharging the developer toward the substrate G on the transport path 108 as shown in FIG. May be set in the direction opposite to the substrate transport direction. As a result, the nozzle DN scans from the front end to the rear end of the substrate G at a relative speed (v _N + v _G ) obtained by adding the nozzle scanning speed v _N and the substrate transport speed v _G. The developer can be supplied to the entire surface to be processed (resist surface) of the substrate G in a very short time even if it is large.
[0076]
In this embodiment, individual for each module M3, M4 developer supply nozzle DNa, since the provided DNb and nozzle scanning mechanism SC _N, a temporal and spatial intervals against the substrate G on the conveying path 108 The developer can be supplied a plurality of times, and the characteristics (density, etc.) of the developer can be changed between the first time and the second time.
[0077]
The substrate G, to which the developing solution has been supplied to the entire surface to be processed as described above by the developing solution supply unit 126, is carried on the transport path 108 and carried into the developing solution dropping unit 128 as it is. When the developer dropping unit 128 arrives at a predetermined position on the downstream side, the substrate tilting mechanism 130 installed therein is operated to lift the substrate G above the transport path 108 to move the substrate G in the transport direction. In addition, for example, the substrate G is inclined so that it faces forward, that is, the developer supply unit 126 side that performs the pre-process is on the upper side. Due to this tilted posture, most of the developer accumulated on the substrate G flows down to the front of the substrate and is collected in the developer pan 134. Thus, since the substrate G is tilted so that the developer supply unit 126 side that performs the pre-process is on the upper side, when the substrate G is tilted by the developer dropping unit 128 and the liquid is drained, the developer pan 134 The possibility that the rebounded liquid adheres to the substrate G on the developer supply unit 126 side can be reduced.
[0078]
The substrate G that has been supplied and collected as described above in the developing unit 112 is carried on the transport path 108 and carried into the rinse unit 114. The rinsing section 114, the upper surface of the substrate G being conveyed while moving horizontally along the rinsing liquid supply nozzle RN conveying path 108 by the scanning driving of the nozzle scanning mechanism SC _R as described above per 5 (surface to be processed) A rinsing liquid such as pure water is sprayed on the The rinse liquid that has fallen out of the substrate G is collected and collected by a rinse liquid pan 136 that is installed under the conveyance path 108.
[0079]
Also in the rinsing unit 114, as shown in FIG. 10A, the direction in which the nozzle RN is scanned while discharging the developer toward the substrate G on the transport path 108 may be set to be opposite to the substrate transport direction. . As a result, the nozzle RN scans from the front end to the rear end of the substrate G at a relative speed (v _N + v _G ) obtained by adding the nozzle scanning speed v _N and the substrate transport speed v _G. Even if it is large, the rinsing liquid can be supplied to the entire surface to be processed (resist surface) of the substrate G within a very short time, and the rinsing liquid can be quickly replaced (development stopped). A rinsing liquid supply nozzle (not shown) for cleaning the back surface of the substrate G may be provided below the transport path 108.
[0080]
The substrate G that has been subjected to the rinsing process as described above in the rinsing unit 114 is carried on the transport path 108 and carried into the drying unit 116. In the drying unit 116, Bepanaifu VN _U, the upper surface of the substrate than VN _L (treated surface) of the upper and lower installed in a predetermined position with respect to the substrate G conveyed on the conveying path 108 as shown in FIGS. 4 and 8 and the back surface A liquid (mainly rinse liquid) adhering to the substrate G is wiped off (removed) to the rear of the substrate by applying a knife-like sharp water vapor flow to the substrate G.
[0081]
Here, the operation of the vapor knife mechanism in the drying unit 116 of this embodiment will be described in detail. As shown in FIG. 8, the substrate G passing through both the vapor knives VN _U and VN _L has been rinsed with a rinsing liquid in the previous rinsing section M6, and generally one or several rinsing liquids are present on the upper surface of the substrate. The liquid film RU is attached, and a large number of rinse liquid droplets RL are also attached to the lower surface of the substrate.
[0082]
As shown in FIG. 11A, when the substrate G passes between the upper and lower vapor knives VN _U and VN _L on the conveyance path 108, the upper vapor knife VN _U is opposed to the conveyance direction from the diagonally upward direction of the substrate G. blowing steam to the upper surface, the lower Bepanaifu VN _L blows steam obliquely from below in a direction against the conveying direction on the lower surface of the substrate G. Then, on the upper surface of the substrate G, as shown in FIG. 11B, the liquid film RU of the rinsing liquid is pushed toward the rear of the substrate against the surface tension by the pressure of the water vapor flow, and most is from the rear end of the substrate. It is dropped out of the substrate and part of it goes around the lower surface of the substrate. Then, on the lower surface of the substrate G, as shown in FIG. 11C, the rinsing liquid droplets RL are gathered to the rear end portion of the substrate by the pressure of the water vapor flow, and together with the amount that has flowed from the upper surface of the substrate. Are pushed out of the substrate G from the rear end of the substrate. The liquid pushed out of the substrate G falls by gravity and is collected by the pan 138.
[0083]
Thus, in this embodiment, the rinsing liquid RU to the surface, RL Bepanaifu to the substrate G which is attached VN _U, so sweeping rinsing liquid from the substrate at a pressure of steam flow by blowing steam from VN _L Therefore, the substrate surface after the rinse liquid is swept out is in a semi-dry state or a fresh dry state. That is, a part of the water vapor sprayed on the substrate G is liquefied on the substrate surface, so that even if the rinse liquid is swept out, the substrate surface is not completely dried and is covered with an extremely thin water film M. . Thus, even if those Bepanaifu VN _U in mist generated by scattering of the rinsing liquid, turning to the downstream side of the VN _L (front side in the conveying direction) adhering to the substrate surface, in the water film M Will cause no stains. Further, since the liquid dissolved from the resist film or the base film on the substrate surface, particularly the upper surface (surface to be processed) is also dispersed in the water film M, it does not aggregate to form a residue. Since the water film M on the substrate is extremely thin, it easily evaporates even in the atmosphere, and disappears mostly after 10 seconds to several tens of seconds by natural drying.
[0084]
Further, in this embodiment, by to have a positional offset in the conveying direction between the upper Bepanaifu VN _U and the lower Bepanaifu VN _L, the temporal offset to sweep do not swept liquid on the upper surface and the lower surface of the substrate G As a result, it is possible to satisfactorily drain the liquid at the rear end of the substrate and prevent or reduce the liquid remaining near the rear end of the substrate.
[0085]
Further, in this embodiment, both Bepanaifu VN _U, since VN _L is inclined obliquely with respect to the left and right lateral direction of the transport path 108 in parallel with each other, the liquid in the upper surface and the lower surface of the substrate G, as shown in FIG. 12 RU and RL can be gathered toward the same corner (the left corner in FIG. 12) at the rear end of the substrate and drained in a diagonal direction (direction of arrow A). At this time, as indicated by an arrow B, the liquid from the opposite corner (right corner) flows along the rear end of the substrate, and the force of this flow facilitates the drainage.
[0086]
The substrate G drained by the drying unit 116 is transferred to the substrate unloading unit 118 as it is on the transport path 108. The substrate carry-out unit 118 has the same configuration as that of the substrate carry-in unit 110 and operates in the same manner as the substrate carry-in unit 110 except that the substrate carrying direction is opposite between carry-in and carry-out. In other words, the lift pins 122 for transferring the substrate are placed on standby at a position lower than the transport path 108 and wait for the substrate G to flow from the upstream side (drying unit 116), and the substrate G arrives at a predetermined position directly above the lift pins 122. If there is, the lift pin 122 is pushed up to lift the substrate G in a horizontal posture and handed to the next substrate transport mechanism (not shown).
[0087]
The substrate G unloaded from the substrate unloading unit 118 is subjected to decoloring processing by i-line irradiation in the decoloring process unit 30 adjacent to the downstream side, and then sent to the third thermal processing unit 36. In the third thermal processing unit 36, first, post-baking is performed by the heating unit (POBAKE) as described above. Therefore, even if the water film M still remains on the substrate G when it is carried into the third thermal processing unit 36, the substrate surface is forcibly dried by the heat treatment (post-baking). Therefore, even if the liquid draining in the drying unit 116 is insufficient, that is, even if a relatively thick liquid film remains on the substrate G, there is no particular problem.
[0088]
In this developing unit (DEV) 94, a prewetting section 124, a developing solution supply section 126, a developing solution dropping section 128, and a rinsing section 114 are conveyed while conveying a large number of substrates G in a row at a predetermined interval on the conveying path 108. In addition, each process is sequentially performed in the drying unit 116, so that a high-efficiency or high-throughput development processing step by a pipeline method can be realized.
[0089]
In particular, in the pre-wetting unit 124, the developing solution supply unit 126, and the rinsing unit 114, nozzles PN, DNa, and DNb that supply a processing solution (pre-wetting solution, developing solution, rinsing solution) to the substrate G on the transport path 108. , RN are scanned along the transport path 108 above the transport path 108, so that the entire substrate processing surface can be used even when the size of the substrate G is large or the transport speed of the transport path 108 is not high. It is possible to quickly supply the processing liquid in a short time. In particular, in the developer supply process, the processing solution supply time difference between one end (front end) and the other end (rear end) in the transport direction of the substrate G can be shortened as much as possible. In-plane uniformity of development quality on the substrate can be improved.
[0090]
In the nozzle scanning mechanism SC of this embodiment, since the nozzle N can be scanned bidirectionally along the transport path 108, the nozzle N is oriented in the same direction as the substrate transport direction as shown in FIG. It is also possible to supply the processing liquid Q to the entire surface of the substrate G while scanning. In this case, it is necessary to set the nozzle scanning speed v _N ′ to a speed larger than the substrate transport speed v _G.
[0091]
In this embodiment, the pre-wetting unit 124 and the developer supply unit 126 are configured to perform spray-type development. However, it is easy to change to the paddle method, and the developer supply nozzles DNa and DNb in the developer supply unit 126 may be changed from a spray type to a liquid discharge type discharge structure. Further, in the paddle system, the pre-wetting unit 124 is not necessary.
[0092]
In the developer supply unit 126, it is possible to omit one of the developer supply nozzles DNa and DNb (usually, DNb on the downstream side). Further, the scannable area of each movable nozzle N on the conveyance path 108 may be set in a range exceeding one module M, and it is possible to adopt a configuration in which adjacent movable nozzles can get on a common guide rail. .
[0093]
In the above-described embodiment, various other modifications are possible. For example, construction is also possible to arrange directly opposite positions with respect to the position that is the conveying path 108 overlap in the vertical direction without remembering offset between the upper Bepanaifu VN _U and the lower Bepanaifu VN _L as shown in FIG. 13. Further, as shown in FIG. 14, it is possible to use a normal air knife EN that ejects dry air or nitrogen gas for draining the back surface of the substrate G. Although not shown, a configuration in which a partition plate for preventing mist diffusion is provided immediately downstream of the vapor knife VN and a configuration in which a separate air knife mechanism for accelerating the drying of the substrate are also possible.
[0094]
Further, a configuration in which a stationary nozzle is used in a part or all of the prewetting unit 124, the developer supply unit 126, and the rinsing unit 114 is also possible. It is also possible to divide the drive system of the transport path 108 into a plurality of parts in the transport direction, and to independently control the transport operation (speed, stop, etc.) on each divided transport path. The conveyance path 108 is not limited to the roller conveyance type, and a belt conveyance type in which a pair of belts are laid in a horizontal direction with a certain interval is also possible.
[0095]
Although the above-described embodiment relates to the developing unit or the developing apparatus, the present invention can also be applied to a substrate processing apparatus other than the developing apparatus. For example, in the coating and developing processing system as described above, the cleaning process unit 24 is used. The scrubber cleaning unit (SCR) 42 can be applied. That is, a drying process similar to that in the above embodiment can be performed on the downstream side of the rinsing unit on the conveyance path in the scrubber cleaning unit (SCR) 42. Further, the present invention can be applied to the draining of any liquid other than the rinsing liquid, and a liquid other than pure water can be used as the vapor source. The substrate to be processed in the present invention is not limited to an LCD substrate, and includes any substrate that requires liquid draining or drying.
[0096]
【The invention's effect】
As described above, according to the substrate processing method or a substrate processing apparatus of the present invention, the flat flow against the substrate to be processed after the liquid processing in method, gas or dry gas other than steam for back surface of the substrate (lower surface) The liquid on the front surface (upper surface) of the substrate was sprayed to blow off the liquid on the substrate, and the substrate was dried in a semi-dry state . It is possible to effectively prevent stains and residues from being generated on the front surface and improve the processing quality.
[Brief description of the drawings]
FIG. 1 is a plan view showing a configuration of a coating and developing treatment system applicable to a substrate processing apparatus of the present invention.
FIG. 2 is a side view showing a configuration of a thermal processing section in the coating and developing processing system.
FIG. 3 is a flowchart showing a processing procedure in the coating and developing processing system.
FIG. 4 is a side view showing an overall configuration of a developing unit in the embodiment.
FIG. 5 is a perspective view illustrating a configuration example of a nozzle scanning mechanism in the embodiment.
FIG. 6 is a perspective view showing an appearance of a vapor knife in the embodiment.
FIG. 7 is a block diagram showing a configuration of a vapor supply mechanism in the embodiment.
FIG. 8 is a side view showing an arrangement configuration of a vapor knife in the embodiment.
FIG. 9 is a plan view showing an arrangement configuration of a vapor knife in the embodiment.
FIG. 10 is a side view showing the action of nozzle scanning in the embodiment.
FIG. 11 is a side view showing the operation of the vapor knife mechanism in the embodiment.
FIG. 12 is a plan view showing the operation of the vapor knife mechanism in the embodiment.
FIG. 13 is a side view showing a modification of the drying unit in the embodiment.
FIG. 14 is a side view showing a modification of the drying unit in the embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Application | coating development processing system 16 (P / S) Process station 32 Development process part 94 (D / V) Development unit 108 Conveyance path 112 Development part 114 Rinse part 116 Drying part VN _U Upper vapor knife NN _L Lower vapor knife 180 Water vapor generation part 182 Gas supply unit 184

Claims (9)

A transport path for transporting the substrate to be processed in a horizontal direction in a substantially horizontal posture;
A liquid processing unit that performs liquid processing by supplying a predetermined processing liquid to the substrate on the transport path;
A drying processing unit that has one or a plurality of vapor injection nozzles for injecting vapor, and blows the liquid from the vapor injection nozzle onto the substrate on the transport path downstream from the liquid processing unit to sweep the liquid from the substrate;
And a drying unit that sprays steam onto the upper surface of the substrate from above the transport path at a first position, and a bottom position of the substrate from below the transport path at a second position. The substrate processing apparatus which has a gas injection nozzle which blows gas other than a vapor | steam to a lower surface. The substrate processing apparatus according to claim 1, wherein the drying processing unit includes a vapor generation unit that generates a vapor by evaporating a predetermined liquid, and a pressure increase unit that increases the pressure by mixing the vapor with another gas. A first step of performing a liquid process by supplying a predetermined processing liquid to the front surface of the substrate while transporting the substrate in a substantially horizontal posture;
After the liquid treatment, the substrate is transported in a substantially horizontal posture, and steam is blown onto the front surface of the substrate to sweep the liquid from the front surface of the substrate, and at the same time, a dry gas is sprayed onto the back surface of the substrate. A substrate processing method comprising: a second step.   The substrate processing method according to claim 3, wherein the front surface of the substrate immediately after the liquid is swept out in the second step is in a dry state.   5. The substrate processing method according to claim 3, wherein a position where the vapor is blown and a position where the dry gas is blown are substantially opposite to the substrate.   5. The substrate processing method according to claim 3, wherein a position at which the dry gas is sprayed is located downstream of the position at which the steam is sprayed in a transport direction.   The substrate processing method according to claim 3, wherein the liquid remaining on the front surface of the substrate after the second step is evaporated by heat treatment.   5. The state of raw drying is a state in which an extremely thin liquid film is formed on the front surface of the substrate so as to evaporate in the air in 10 seconds to several tens of seconds by natural drying. The substrate processing method according to claim 6.   The substrate processing method according to any one of claims 4 to 6, wherein the vapor and the dry gas are sprayed at least from one end to the other end of the substrate in a horizontal direction orthogonal to the transport direction of the substrate.

Images