JP2004103978A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004103978A5 JP2004103978A5 JP2002266445A JP2002266445A JP2004103978A5 JP 2004103978 A5 JP2004103978 A5 JP 2004103978A5 JP 2002266445 A JP2002266445 A JP 2002266445A JP 2002266445 A JP2002266445 A JP 2002266445A JP 2004103978 A5 JP2004103978 A5 JP 2004103978A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- vapor
- transport path
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
また、好ましい一態様として、乾燥処理部が、第1の位置にて搬送路の上方から基板の上面に蒸気を吹き付ける第1の蒸気噴射ノズルと、搬送路に沿って第1の位置より直ぐ下流側の第2の位置にて搬送路の下から基板の下面に蒸気を吹き付ける第2の蒸気噴射ノズルとを有する構成としてもよい。かかる構成では、搬送路を挟んで上下に配置される一対の蒸気噴射ノズルの間で搬送方向に位置的なオフセットをもたせることにより、基板の上面および下面における液の掃き寄せないし掃き出しに時間的なオフセットを与え、それによって基板後端における液切りを良好に行い、基板後端付近の液の残留を防止ないし低減できる。
また、別の好適な一態様として、第1および第2の蒸気噴射ノズルを互いに平行に、かつ搬送路の左右横方向に対して斜めに傾けて配置してよい。かかる構成によれば、基板の上面および下面において液を基板後端部の同じ角隅部の方に寄せ集めて対角線方向に効果的に液切りすることができる。
また、乾燥処理部において、基板の下面または裏面の液切りを行なうための蒸気噴射ノズルを蒸気以外の気体(たとえばエアーまたは窒素ガス)を吹き付けるガス噴射ノズルに置き換える構成も可能である。
Further, as a preferred embodiment, the drying processing unit sprays the vapor onto the upper surface of the substrate from above the transport path at the first position, and immediately downstream from the first position along the transport path. It may be configured to have a second steam injection nozzle for blowing steam to the lower surface of the substrate from under the transport path at the second position on the side. In such a configuration, by providing positional offset in the transport direction between a pair of steam injection nozzles disposed above and below the transport path, it is possible to timely sweep or sweep out the liquid on the upper and lower surfaces of the substrate. An offset is provided, whereby the liquid can be satisfactorily removed at the rear end of the substrate, and the liquid remaining near the rear end of the substrate can be prevented or reduced.
Further, as another preferable aspect, the first and second steam injection nozzles may be disposed parallel to each other and inclined obliquely to the lateral direction of the transport path. According to this configuration, it is possible to gather the liquid on the upper and lower surfaces of the substrate toward the same corner of the rear end of the substrate and to remove the liquid effectively in the diagonal direction.
In the drying processing unit, it is also possible to replace the steam injection nozzle for removing the liquid on the lower surface or the back surface of the substrate with a gas injection nozzle for blowing a gas other than steam (for example, air or nitrogen gas).
また、本発明の別の観点による基板処理方法は、基板をほぼ水平な姿勢で搬送しながら前記基板のおもて面に所定の処理液を供給して液処理を行う第1の工程と、前記液処理の後に前記基板をほぼ水平な姿勢で搬送しながら前記基板のおもて面に蒸気を吹き付けて前記基板おもて面から液を掃き出すと同時に前記基板の裏面に乾燥ガスを吹き付ける第2の工程とを有する。In the substrate processing method according to another aspect of the present invention, a first processing is performed by supplying a predetermined processing liquid to the front surface of the substrate while transporting the substrate in a substantially horizontal posture; After the liquid processing, while conveying the substrate in a substantially horizontal posture, vapor is blown to the front surface of the substrate to sweep out the liquid from the front surface of the substrate and at the same time dry gas is sprayed to the back surface of the substrate. And 2 steps.
この基板処理方法においては、第1の工程の液処理によって基板に付着した液を、基板おもて面では蒸気を吹き付けて掃き出し、基板裏面では乾燥ガスを吹き付けて払い落とす。好ましくは、第2の工程で、液を掃き出した直後の基板のおもて面が生乾きの状態になるようにしてよい。この生乾きの状態は、大気中で自然乾燥により10秒ないし数10秒で蒸発する程度の極薄の液膜が基板のおもて面の上に形成されている状態である。もっとも、第2の工程の後に基板のおもて面に残る液を加熱処理により蒸発させてもよい。In this substrate processing method, the liquid adhering to the substrate by the liquid processing in the first step is swept out by spraying vapor on the front surface of the substrate, and the drying gas is blown away on the back surface of the substrate. Preferably, in the second step, the front surface of the substrate immediately after the solution is swept may be in a state of raw dryness. In this state of raw drying, a very thin liquid film is formed on the front surface of the substrate such that it evaporates in 10 seconds to several tens of seconds by natural drying in the air. However, the liquid remaining on the front surface of the substrate after the second step may be evaporated by heat treatment.
本発明の好適な一態様によれば、蒸気を吹き付ける位置と乾燥ガスを吹き付ける位置とが基板に対してほぼ真向かいの位置となるように設定される。別の好適な一態様によれば、乾燥ガスを吹き付ける位置が蒸気を吹き付ける位置に対して搬送方向の下流側に位置するように設定される。また、好ましくは、蒸気と乾燥ガスとを基板の搬送方向と直交する水平方向において少なくとも基板の一端から他端までに亘って吹き付けてよい。According to a preferred aspect of the present invention, the position to spray the vapor and the position to spray the drying gas are set so as to be approximately directly opposite to the substrate. According to another preferred aspect, the position for blowing the drying gas is set to be located downstream of the position for blowing the steam in the transport direction. Also, preferably, the vapor and the drying gas may be sprayed at least from one end of the substrate to the other end in the horizontal direction orthogonal to the transport direction of the substrate.
インタフェースステーション(I/F)18は、隣接する露光装置12と基板Gのやりとりを行うための搬送装置104を有し、その周囲にバッファ・ステージ(BUF)106、エクステンション・クーリングステージ(EXT・COL)108および周辺装置110を配置している。バッファ・ステージ(BUF)105には定置型のバッファカセット(図示せず)が置かれる。エクステンション・クーリングステージ(EXT・COL)108は、冷却機能を備えた基板受け渡し用のステージであり、プロセスステーション(P/S)16側と基板Gをやりとりする際に用いられる。周辺装置110は、たとえばタイトラー(TITLER)と周辺露光装置(EE)とを上下に積み重ねた構成であってよい。搬送装置104は、基板Gを保持できる手段たとえば搬送アーム104aを有し、隣接する露光装置12や各ユニット(BUF)106、(EXT・COL)108、(TITLER/EE)110と基板Gの受け渡しを行えるようになっている。
The interface station (I / F) 18 has a carrier device 104 for exchanging the substrate G with the adjacent exposure device 12, and around it, a buffer stage (BUF) 106 , an extension cooling stage (EXT · COL) ) are arranged 108 and peripheral devices 110. In the buffer stage (BUF) 105, a stationary buffer cassette (not shown) is placed. The extension / cooling stage (EXT · COL) 108 is a stage for transferring a substrate having a cooling function, and is used when exchanging the substrate G with the process station (P / S) 16 side. Peripheral device 110 may have, for example, a configuration in which a titler (TITLER) and a peripheral exposure device (EE) are stacked vertically. The transfer device 104 has a means capable of holding the substrate G, for example, the transfer arm 104a, and transfers the substrate G to the adjacent exposure device 12 and each unit (BUF) 106 , (EXT · COL) 108 , (TITLER / EE) 110. Are able to
第2の熱的処理部30内で、基板Gは、搬送機構90により所定のシーケンスで所定のユニットを回される。たとえば、基板Gは、最初に該パスユニット(PASS)から加熱ユニット(PREBAKE)の1つに移され、そこでレジスト塗布後のベーキングを受ける(ステップS9)。次に、基板Gは、冷却ユニット(COL)の1つに移され、そこで一定の基板温度まで冷却される(ステップS10)。しかる後、基板Gは下流側多段ユニット部(TB)92側のパスユニット(PASS)を経由して、あるいは経由せずにインタフェースステーション(I/F)18側のエクステンション・クーリングステージ(EXT・COL)108へ受け渡される。
In the second thermal processing unit 30, the substrate G is rotated by a transport mechanism 90 through a predetermined unit in a predetermined sequence. For example, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (PREBAKE), where it undergoes baking after resist application (step S9). The substrate G is then transferred to one of the cooling units (COL) where it is cooled to a constant substrate temperature (step S10). After that, the substrate G is extended / cooling stage (EXT / COL) on the interface station (I / F) 18 side with or without passing through the pass unit (PASS) on the downstream multi-stage unit part (TB) 92 side. It is delivered to 108 ).
インタフェースステーション(I/F)18において、基板Gは、エクステンション・クーリングステージ(EXT・COL)108から周辺装置110の周辺露光装置(EE)に搬入され、そこで基板Gの周辺部に付着するレジストを現像時に除去するための露光を受けた後に、隣の露光装置12へ送られる(ステップS11)。
At the interface station (I / F) 18, the substrate G is carried from the extension cooling stage (EXT · COL) 108 to the peripheral exposure device (EE) of the peripheral device 110, where the resist adhering to the peripheral portion of the substrate G is After receiving the exposure for removal at the time of development, it is sent to the next exposure device 12 (step S11).
露光装置12では基板G上のレジストに所定の回路パターンが露光される。そして、パターン露光を終えた基板Gは、露光装置12からインタフェースステーション(I/F)18に戻されると(ステップS11)、先ず周辺装置110のタイトラー(TITLRER)に搬入され、そこで基板上の所定の部位に所定の情報が記される(ステップS12)。しかる後、基板Gはエクステンション・クーリングステージ(EXT・COL)108に戻される。インタフェースステーション(I/F)18における基板Gの搬送および露光装置12との基板Gのやりとりは搬送装置104によって行われる。
In the exposure device 12, a predetermined circuit pattern is exposed on the resist on the substrate G. Then, when the substrate G which has finished the pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S11), first, it is carried into the tighter (TITLERER) of the peripheral device 110, where the predetermined on the substrate Predetermined information is described in the part of (step S12). Thereafter, the substrate G is returned to the extension / cooling stage (EXT · COL) 108 . The transfer of the substrate G at the interface station (I / F) 18 and the exchange of the substrate G with the exposure device 12 are performed by the transfer device 104.
プロセスステーション(P/S)16では、第2の熱的処理部30において搬送機構90がエクステンション・クーリングステージ(EXT・COL)108より露光済の基板Gを受け取り、プロセスラインB側の多段ユニット部(TB)92内のパスユニット(PASS)を介して現像プロセス部32へ受け渡す。
At the process station (P / S) 16, the transfer mechanism 90 in the second thermal processing unit 30 receives the exposed substrate G from the extension / cooling stage (EXT · COL) 108 , and the multistage unit unit on the process line B side At (TB) 92, it is delivered to the development processing unit 32 via a pass unit (PASS).
このように、この実施形態では、表面にリンス液RU,RLが付いている基板Gに対してベーパナイフVNU,VNLより水蒸気を吹き付けて水蒸気流の圧力で基板上からリンス液を掃き出すようにしたので、リンス液を掃き出した後の基板表面は半乾きまたは生乾きの状態となる。つまり、基板Gに吹き付けられた水蒸気の一部が基板表面で液化することにより、リンス液を掃き出しても、基板表面は完全に乾くことはなく極薄の水膜Mで覆われた状態となる。このことにより、リンス液の飛散によって発生したミストの中でベーパナイフVNU,VNLの下流側(搬送方向の前方側)に回って基板表面に付着するものがあっても、水膜Mの中で分散するため、シミを生じることはない。また、基板表面、特に上面(被処理面)のレジスト膜または下地膜から溶け出した液体も、やはり水膜Mの中で分散するため、凝集して残渣を生じるようなことはない。基板上の水膜Mは、極薄のために大気中でも蒸発しやすく、自然乾燥により10秒ないし数10秒も経過すれば大方消滅する。 Thus, in this embodiment, water vapor is blown from the vapor knife VN U , V N L to the substrate G having the rinse liquid RU, RL on the surface, and the rinse liquid is swept out from above the substrate by the pressure of the steam flow. As a result, the substrate surface after the rinse liquid is swept out is in a semi-dried or dry state. That is, even if the rinse liquid is swept out, part of the water vapor sprayed onto the substrate G is liquefied on the substrate surface, and the substrate surface is not completely dried and is covered with the extremely thin water film M. . As a result, even if there is mist generated by scattering of the rinse liquid around the downstream side (forward side in the transport direction) of the vapor knife VN U , V N L and attached to the substrate surface, the inside of the water film M It does not cause stains because it In addition, since the liquid dissolved from the resist film or the base film on the substrate surface, in particular, the upper surface (surface to be treated) is also dispersed in the water film M, it does not aggregate to form a residue. The water film M on the substrate is easy to evaporate in the air because of its extremely thin thickness, and disappears after 10 seconds to several tens of seconds due to natural drying.
Claims (17)
前記液処理の後に前記基板をほぼ水平な姿勢で搬送しながら前記基板に蒸気を吹き付けて前記基板上から液を掃き出す第2の工程と
を有する基板処理方法。A first step of supplying a predetermined processing liquid to the substrate to transport the liquid while transporting the substrate in a substantially horizontal posture;
A second step of spraying the vapor onto the substrate while transporting the substrate in a substantially horizontal posture after the liquid processing and sweeping out the liquid from the substrate.
前記搬送路上で前記基板に所定の処理液を供給して液処理を行う液処理部と、
蒸気を噴射する蒸気噴射ノズルを1つまたは複数有し、前記液処理部より下流側の前記搬送路上で前記基板に前記蒸気噴射ノズルより蒸気を吹き付けて前記基板上から液を掃き出す乾燥処理部と
を有する基板処理装置。A transport path for horizontally transporting the substrate to be processed in a substantially horizontal posture;
A liquid processing unit that supplies a predetermined processing liquid to the substrate on the transport path to perform liquid processing;
A drying processing unit having one or more vapor injection nozzles for injecting vapor, and spraying the vapor from the vapor injection nozzle onto the substrate on the transport path downstream of the liquid processing unit to sweep out the liquid from the substrate; Substrate processing apparatus having
前記液処理の後に前記基板をほぼ水平な姿勢で搬送しながら前記基板のおもて面に蒸気を吹き付けて前記基板おもて面から液を掃き出すと同時に前記基板の裏面に乾燥ガスを吹き付ける第2の工程とAfter the liquid processing, while conveying the substrate in a substantially horizontal posture, vapor is blown to the front surface of the substrate to sweep out the liquid from the front surface of the substrate and at the same time dry gas is sprayed to the back surface of the substrate. With 2 processes
を有する基板処理方法。A substrate processing method comprising:
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002266445A JP3837720B2 (en) | 2002-09-12 | 2002-09-12 | Substrate processing method and substrate processing apparatus |
TW092104407A TWI234796B (en) | 2002-03-04 | 2003-03-03 | Solution treatment method and solution treatment unit |
KR1020030013395A KR101003625B1 (en) | 2002-03-04 | 2003-03-04 | Liquid processing method and liquid processing apparatus |
CNB031198341A CN1302341C (en) | 2002-03-04 | 2003-03-04 | Liquid treatment method and liquid treatment device |
KR1020090125972A KR100981212B1 (en) | 2002-03-04 | 2009-12-17 | Liquid processing method and liquid processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002266445A JP3837720B2 (en) | 2002-09-12 | 2002-09-12 | Substrate processing method and substrate processing apparatus |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006166520A Division JP4328342B2 (en) | 2006-06-15 | 2006-06-15 | Substrate processing method and substrate processing apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004103978A JP2004103978A (en) | 2004-04-02 |
JP2004103978A5 true JP2004103978A5 (en) | 2005-06-16 |
JP3837720B2 JP3837720B2 (en) | 2006-10-25 |
Family
ID=32265262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002266445A Expired - Fee Related JP3837720B2 (en) | 2002-03-04 | 2002-09-12 | Substrate processing method and substrate processing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3837720B2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4551117B2 (en) * | 2004-04-28 | 2010-09-22 | 株式会社アトマックス | Fine particle spray device |
JP2006013156A (en) * | 2004-06-25 | 2006-01-12 | Hoya Corp | Substrate processing apparatus, substrate processing method, and pattern forming method |
JP4672480B2 (en) * | 2005-08-10 | 2011-04-20 | 東京エレクトロン株式会社 | Application processing equipment |
JP2007317802A (en) * | 2006-05-24 | 2007-12-06 | Shibaura Mechatronics Corp | Apparatus and method of dry-processing substrate |
US8021512B2 (en) * | 2007-05-14 | 2011-09-20 | Lam Research Corporation | Method of preventing premature drying |
JP5096849B2 (en) | 2007-09-13 | 2012-12-12 | 株式会社Sokudo | Substrate processing apparatus and substrate processing method |
CN102319699A (en) * | 2011-06-29 | 2012-01-18 | 彩虹(佛山)平板显示有限公司 | Cleaning device of TFT (Thin Film Transistor) substrate |
CN106256442A (en) * | 2015-06-18 | 2016-12-28 | 深圳市堃琦鑫华股份有限公司 | A kind of coatings technique |
CN106148959A (en) * | 2016-08-15 | 2016-11-23 | 深圳市五株科技股份有限公司 | Etaching device and engraving method |
KR101822816B1 (en) | 2016-10-13 | 2018-01-29 | 주식회사 디이엔티 | The steam injection module |
JP2022043561A (en) * | 2020-09-04 | 2022-03-16 | 川崎重工業株式会社 | Robot, board wet processing robot system, and liquid recovery method |
-
2002
- 2002-09-12 JP JP2002266445A patent/JP3837720B2/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102520345B1 (en) | Substrate processing apparatus and substrate processing method | |
JP3300624B2 (en) | Substrate edge cleaning method | |
US6282812B1 (en) | Multi air-knife box and method of use | |
JP2004103978A5 (en) | ||
JP2013542607A (en) | Method and apparatus for drying a semiconductor wafer | |
JP3694641B2 (en) | Substrate processing apparatus, development processing apparatus, and development processing method | |
JP4776380B2 (en) | Processing apparatus and processing method | |
JP2009088442A (en) | Substrate drying device, device for manufacturing flat panel display, and flat panel display | |
US6488779B1 (en) | Method and apparatus for cleaning substrates | |
US20120164840A1 (en) | Substrate Processing Method and Substrate Processing Apparatus | |
JP4924467B2 (en) | Processing apparatus, cleaning method, and storage medium | |
JP4450825B2 (en) | Substrate processing method, resist surface processing apparatus, and substrate processing apparatus | |
JP3837720B2 (en) | Substrate processing method and substrate processing apparatus | |
JP3084339B2 (en) | Coating method and apparatus | |
JP2007317802A (en) | Apparatus and method of dry-processing substrate | |
JP2010157586A (en) | Drying device | |
JP4328342B2 (en) | Substrate processing method and substrate processing apparatus | |
JPH0861846A (en) | Method and apparatus for drying semiconductor wafer | |
JP3963732B2 (en) | Coating processing apparatus and substrate processing apparatus using the same | |
JP2755865B2 (en) | Lead frame cleaning and drying equipment | |
JPH11145102A (en) | Substrate drying method and device | |
JP3165883B2 (en) | Photoresist removal method and apparatus | |
JPH02216824A (en) | Cleaning method and device | |
JP2005159191A (en) | Substrate cleaning device | |
JP3454469B2 (en) | Substrate drying equipment |