KR20020056241A - 디지털 엑스선 검출기용 박막트랜지스터 어레이 패널 및그 제조방법 - Google Patents
디지털 엑스선 검출기용 박막트랜지스터 어레이 패널 및그 제조방법 Download PDFInfo
- Publication number
- KR20020056241A KR20020056241A KR1020000085562A KR20000085562A KR20020056241A KR 20020056241 A KR20020056241 A KR 20020056241A KR 1020000085562 A KR1020000085562 A KR 1020000085562A KR 20000085562 A KR20000085562 A KR 20000085562A KR 20020056241 A KR20020056241 A KR 20020056241A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive layer
- array panel
- pad
- tft array
- digital
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 14
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910000583 Nd alloy Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002059 diagnostic imaging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Nonlinear Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (3)
- 액티브영역과 패드영역으로 정의된 TFT 어레이 패널에 있어서,절연 기판상의 패드영역 소정부위에 일정간격을 두고 형성된 제 1 도전층;상기 제 1 도전층을 포함한 기판상에 형성된 제 2 도전층을 포함하여 이루어지는 것을 특징으로 하는 TFT 어레이 패널.
- 제 1 항에 있어서, 상기 제 1, 제 2 도전층의 물질은 AlNd(Aluminium Neodymium)합금인 것을 특징으로 하는 TFT 어레이 패널.
- 액티브 영역과 패드영역으로 정의된 TFT 어레이 패널 제조에 있어서,상기 절연 기판상의 패드영역 소정부위에 일정간격을 두고 형성되도록 제 1 도전층을 형성하는 단계;상기 제 1 도전층을 포함한 기판상에 제 2 도전층을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 TFT 어레이 패널 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000085562A KR100859464B1 (ko) | 2000-12-29 | 2000-12-29 | 디지털 엑스레이 검출기용 박막트랜지스터 어레이 패널 및 그 제조방법 |
US10/028,982 US6670708B2 (en) | 2000-12-29 | 2001-12-28 | Thin film transistor array panel and method for fabricating the same |
US10/703,582 US7679084B2 (en) | 2000-12-29 | 2003-11-10 | Thin film transistor array panel and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000085562A KR100859464B1 (ko) | 2000-12-29 | 2000-12-29 | 디지털 엑스레이 검출기용 박막트랜지스터 어레이 패널 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020056241A true KR20020056241A (ko) | 2002-07-10 |
KR100859464B1 KR100859464B1 (ko) | 2008-09-23 |
Family
ID=19703938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000085562A KR100859464B1 (ko) | 2000-12-29 | 2000-12-29 | 디지털 엑스레이 검출기용 박막트랜지스터 어레이 패널 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (2) | US6670708B2 (ko) |
KR (1) | KR100859464B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745415B1 (ko) * | 2002-12-27 | 2007-08-03 | 엘지.필립스 엘시디 주식회사 | 액정 표시패널의 데이터 패드부 및 그 제조방법 |
KR101147260B1 (ko) * | 2003-12-27 | 2012-05-18 | 엘지디스플레이 주식회사 | 액정표시장치와 그 제조방법 |
CN110299073A (zh) * | 2019-07-23 | 2019-10-01 | 昆山国显光电有限公司 | 一种显示面板、柔性连接件和显示装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003347351A (ja) * | 2002-05-29 | 2003-12-05 | Mitsubishi Electric Corp | 半導体装置 |
KR100918180B1 (ko) * | 2003-03-04 | 2009-09-22 | 삼성전자주식회사 | 쉬프트 레지스터 |
US20070090541A1 (en) * | 2005-10-21 | 2007-04-26 | Chih-Chung Tu | Bonding pad and display panel |
US7863743B1 (en) * | 2009-06-30 | 2011-01-04 | Oracle America, Inc. | Capactive connectors with enhanced capacitive coupling |
KR101585218B1 (ko) * | 2010-02-04 | 2016-01-13 | 삼성전자주식회사 | 입출력 패드 영역과 중첩된 공정 모니터링 패턴을 포함하는 반도체 소자, 반도체 모듈, 전자 회로 기판 및 전자 시스템 및 반도체 소자를 제조하는 방법 |
US8802554B2 (en) * | 2011-02-15 | 2014-08-12 | Marvell World Trade Ltd. | Patterns of passivation material on bond pads and methods of manufacture thereof |
JP6663249B2 (ja) * | 2016-02-26 | 2020-03-11 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102533660B1 (ko) * | 2018-07-04 | 2023-05-17 | 삼성디스플레이 주식회사 | 표시 장치 |
CN115394212B (zh) * | 2022-08-29 | 2023-07-25 | 武汉华星光电半导体显示技术有限公司 | 显示面板及拼接显示屏 |
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JPS57143838A (en) * | 1981-02-27 | 1982-09-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS60101951A (ja) * | 1983-11-08 | 1985-06-06 | Sanyo Electric Co Ltd | ゲ−トアレイ |
US4635347A (en) * | 1985-03-29 | 1987-01-13 | Advanced Micro Devices, Inc. | Method of fabricating titanium silicide gate electrodes and interconnections |
US4811078A (en) * | 1985-05-01 | 1989-03-07 | Texas Instruments Incorporated | Integrated circuit device and process with tin capacitors |
JPH022179A (ja) * | 1988-06-13 | 1990-01-08 | Fujitsu Ltd | メタル・セミコンダクタ・fet |
US5219607A (en) * | 1988-11-29 | 1993-06-15 | Nippon Cmk Corp. | Method of manufacturing printed circuit board |
US5578526A (en) * | 1992-03-06 | 1996-11-26 | Micron Technology, Inc. | Method for forming a multi chip module (MCM) |
JPH0870105A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JP3491415B2 (ja) * | 1995-01-13 | 2004-01-26 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
US5976971A (en) * | 1995-07-19 | 1999-11-02 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having an interconnection structure |
JPH09146120A (ja) * | 1995-11-27 | 1997-06-06 | Sanyo Electric Co Ltd | 液晶表示装置 |
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US5904563A (en) * | 1996-05-20 | 1999-05-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for metal alignment mark generation |
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US6016060A (en) * | 1997-03-25 | 2000-01-18 | Micron Technology, Inc. | Method, apparatus and system for testing bumped semiconductor components |
KR100253077B1 (ko) * | 1997-08-16 | 2000-04-15 | 윤종용 | 소이 구조를 갖는 반도체 메모리 장치 및 그의 제조방법 |
JP3102392B2 (ja) * | 1997-10-28 | 2000-10-23 | 日本電気株式会社 | 半導体デバイスおよびその製造方法 |
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KR100280889B1 (ko) * | 1998-06-30 | 2001-02-01 | 구본준, 론 위라하디락사 | 액정 표시 장치의 패드부 제조 방법 및 그 방법에 의한 액정 표시 장치 |
JP3975008B2 (ja) * | 1998-07-21 | 2007-09-12 | 株式会社アドバンスト・ディスプレイ | 表示装置の製造方法 |
JP4184522B2 (ja) * | 1999-01-29 | 2008-11-19 | 富士通株式会社 | 薄膜トランジスタ基板 |
-
2000
- 2000-12-29 KR KR1020000085562A patent/KR100859464B1/ko active IP Right Grant
-
2001
- 2001-12-28 US US10/028,982 patent/US6670708B2/en not_active Expired - Lifetime
-
2003
- 2003-11-10 US US10/703,582 patent/US7679084B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745415B1 (ko) * | 2002-12-27 | 2007-08-03 | 엘지.필립스 엘시디 주식회사 | 액정 표시패널의 데이터 패드부 및 그 제조방법 |
KR101147260B1 (ko) * | 2003-12-27 | 2012-05-18 | 엘지디스플레이 주식회사 | 액정표시장치와 그 제조방법 |
CN110299073A (zh) * | 2019-07-23 | 2019-10-01 | 昆山国显光电有限公司 | 一种显示面板、柔性连接件和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100859464B1 (ko) | 2008-09-23 |
US6670708B2 (en) | 2003-12-30 |
US20020121666A1 (en) | 2002-09-05 |
US7679084B2 (en) | 2010-03-16 |
US20040089884A1 (en) | 2004-05-13 |
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