200924182 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具有主動矩陣基板之影像檢測器， 其中該主動矩陣基板具有多數配置於其上之切換元件。 【先前技術】 近年來，平板檢測器（FPD)已於實際上應用。該FPD包 括一主動矩陣式基板，於其上配置有多數切換元件以及於 其上堆疊一 X光感光層，並可直接將X光資料轉換爲數位 資料。該FPD優於傳統之成像板，因爲其容許動畫的確認 以及影像的瞬間確認。 此類FPSs之一，例如，日本專利第3 7 3 7 3 4 3號所提出 之一種如第1 7圖中所示之影像檢測器。 ’ 該日本專利第3 7 3 7 3 4 3號中所提出之影像檢測器，包 括一種具有多數以二維配置之TFT開關的TFT陣列基板 1〇〇; —半導體層丨丨6，其依照於其上所入射之電磁波產生 電荷並堆疊於該TFT陣列基板100上，使得該等電荷被該 TFT陣列基板1〇〇讀出；一上電極117，堆疊於該半導體層 116上’一保護基扳118，堆疊於該半導體層116與上電極 117上方，以便將其覆蓋；以及一樹脂材料119，其塡入該 半導體層1 1 6 /上電極1 1 7與保護基板1 1 8之間的間隙，如 第1 7圖中所示。 當使用日本專利第3 7 3 7 3 4 3號中所述之影像檢測器執 行該影像檢測時，會對該上電極1 1 7施加一高壓。此造成 自該上電極經由該半導體層116之表面到該TFT陣列基板 1 00之線路發生沿面放電，其可能導致線路毀壞。然而，如 200924182 第17匱 部覆蓋 於 料1 1 9 而，因 的介面 線路損 此 於該樹 該保護 100,其 TFT陣 有機絕 的。 可 有機絕 合強度 TFT陣 題，其 鑑 器’其 【發明 本 其上配 3中所示，該線路損壞可藉由將該半導體層11 6之端 該樹脂材料1 1 9而可預防。 曰本專利第37 3 7 343號之影像檢測器中之該樹脂材 與T F T陣列基板1 〇 〇之間的接合強度是不夠的，然 溫度改變而於該樹脂材料與TFT陣列基板1 〇〇之間 上所產生之線性膨脹之脫離問題將造成沿面放電或 壞。 外’在日本專利第3737 343號之影像檢測器中，若 脂材料1 1 9與TFT陣列基板1 〇〇之間發生脫離，則 基板118僅以其接觸表面接合至該TFT陣列基板 也會因缺乏接合強度而造成該保護基板118之脫離。 般來說’於該TFT陣列基板之電荷收集電極下之該 列基板上’提供一由有機材料製成厚度1至之 緣層以使該TFT陣列基板之沈積表面平坦是必要 發現到，其中該TFT陣列基板之最上方表面係由— 緣材料構成’該樹脂材料與有機絕緣材料之間的接 是弱的’並且因溫度改變而最終將在該樹脂材料與 列基板1 〇〇之間的介面上產生線性膨脹之脫離問 接著將造成沿面放電或線路損壞。 於上述情況，本發明之目的係提供一種影像檢測 可防止樹脂材料自該主動矩陣基板脫離。 內容】 發明之影像檢測器包括：一主動矩陣基板，具有於 置多數切換元件之基板；一半導體層，其依照於其 200924182 上照射而代表影像資訊之電磁波來產生電荷，以及堆疊於 該主動矩陣基板上，使得該等電荷被該主動矩陣基板讀 取；一保護基板，與該主動矩陣基板相對配置；以及一絕 緣接合構件，其將該保護基板接合至該主動矩陣基板，其 中該絕緣接合構件係透過一配置在該半導體層周圍之區域 內的無機絕緣薄膜而被接合至該主動矩陣基板。 在本發明之影像檢測器中，該保護基板可透過一有機 絕緣薄膜而被接合至該主動矩陣基板。 此外，該主動矩陣基板可包括一有機絕緣薄膜，其於 具有絕緣接合構件之接合區域處具有複數開口；以及無機 絕緣薄膜可被配置在該有機絕緣薄膜之該等開口處。 此外，可形成該有機絕緣薄膜之該等開□，使得該絕 緣接合構件與該無機絕緣薄膜之接觸區域透過該等開口而 相當於該絕緣接合構件與該主動矩陣基板之接觸區域之 2 0 % 至 8 0%。 再者，該主動矩陣基板可包括多數信號線路，以及一 有機絕緣薄膜，其可被設置在該等信號線路上方或其鄰近 區域，以及該無機絕緣薄膜，其可被設在除了設有該有機 絕緣薄膜之區域外的區域中。 此外，該絕緣接合構件與該無機絕緣薄膜之接觸區域 可相當於該絕緣接合構件與該主動矩陣基板之接觸區域的 2 0 至 8 0 %。 再者，該無機絕緣薄膜可爲一 Si Nx薄膜。 依照本發明之影像檢測器，該絕緣接合構件係透過配 置於該半導體層之周圍附近的區域中之該無機絕緣薄膜而 200924182 被接合至該主動矩陣基板，以致使可改善該絕緣接合構件 與主動矩陣基板之間的黏性。因此，當溫度改變發生時， 可防止該絕緣接合構件因線性膨脹而脫離，故由沿面放電 等所引起之線路毀壞可被適當地防止。此外，該絕緣接合 構件與主動矩陣基板間之黏性改良可讓該保護基板被適當 地接合至該主動矩陣基板，其中該保護基板係透過該絕緣 接合構件而被接合至該主動矩陣基板。 在本發明之影像檢測器中，該保護基板及主動矩陣基 板係藉由一接合劑而被暫時接合，並且其中該保護基板係 透過一有機絕緣薄膜而被接合至該主動矩陣基板，故可降 低對該主動矩陣基板之底層的影響。 此外，該主動矩陣包括一有機絕緣薄膜，其於與該絕 緣接合構件之接合區域處具有複數開口，以及一配置在該 有機絕緣薄膜之該等開口處之無機絕緣薄膜，相較於一無 機絕緣薄膜係配置在該絕緣接合構件與該主動矩陣基板之 整個接觸表面上的情形，該黏性可藉由不規則產生之該等 開口而被進一步改善。 再者，設置一有機絕緣薄膜於該主動矩陣基板之該等 信號線路或其鄰近區域上，以及設置一無機絕緣薄膜於設 有該有機絕緣薄膜之區域以外之區域中，可降低來自該主 動矩陣基板之上電極施加於該等信號線路上之電壓的沿面 放電，以及同時，可改善該絕緣接合構件與主動矩陣基板 之間的黏性。 【實施方式】 此後，將參照隨附圖式說明應用爲本發明之影像檢測 200924182 器之第一實施例之輻射影像檢測器。第1圖說明 像檢測器之示意結構。 如第1圖中所示，該輻射影像檢測器包括一 基板10，其有一於其上配置多數TFT開關之基板 體層6，其依照代表照射於其上之輻射影像資訊 產生電荷，並堆疊於該TFT陣列基板10上，使得 被該TFT陣列基板10讀出；一上電極7，堆疊於 層6上方；設置一絕緣接合構件25以覆蓋該半導 周圍部分與該上電極7之上部，及以接合一保護基 後說明）至該TFT陣列基板10 ;及該保護基板， 該絕緣接合構件25上。 當以諸如X光之電磁波照射時，該半導體層 產生複數電荷（電子-電洞）。亦即，該半導體層6 波傳導性並用以轉換代表X光之輻射影像資訊 訊。該半導體層6係由例如a-Se(其爲一主要由硒 晶體）所構成。在此該”主要由硒組成”之詞語意 50 %之硒內含率。 該半導體層6之特性係易明顯隨著環境而降 使其需要某一特定類型之遮蔽以防止雜質、濕氣 之污染。由於對該上電極7施加1至10kV偏壓， 要具有足夠的抗壓性。因此，於本實施例之輻射 器中設置該保護基板18。 較佳地是，該保護基板1 8係由相同於該TFT 10之基板的材料製成並具有相同的板厚度。在本 輻射影像檢測器中，使用0.7mm厚度之非鹼性玻 該輻射影 TFT陣歹IJ ;一半導 的電磁波 該等電荷 該半導體 體層6之 :板1 8(稍 其堆疊於 6於其中 具有電磁 爲電荷資 組成之非 指不低於 低，以致 及類似物 故其亦需 影像檢測 陣列基板 實施例之 璃。 200924182 接著，設置該絕緣接合構件2 5 ’用以將該保護基板！8 接合至該TFT陣列基板10’以及防止該上電極7與TFT陣 列基板1 0之間的沿面放電。該絕緣接合構件25係由環氧 基群材料製成。 現在將參照第2及3圖詳細說明該TFT陣列基板1 〇。 該TFT陣列基板10包括多數以二維配置之像素，每一者具 有TFT開關，然而第2圖係說明一像素之平面視圖，以及 第3圖爲沿著第2圖之線3-3之剖面圖。 如第3圖中所示，該TFT陣列基板1 〇包括一玻璃基板 1、一掃描線2、一電荷儲存電容電極（Cs電極）14、一鬧極 絕緣薄膜15、一連接電極13、一通道層8、一接觸層9、 一資料線3、一絕緣保護薄膜1 7、一內層絕緣薄膜1 2、以 及一電荷收集電極1 1。 此外，一薄膜電晶體4係藉由該掃描線2、閘極絕緣 薄膜15、資料線3、連接電極13、通道層8、接觸層9等 所構成，以及一電荷儲存電容（Cs)5係由該Cs電極14、閘 極絕緣薄膜1 5、連接電極1 3等所構成。 該玻璃基板1爲一支承基板，其係例如爲一非鹼性玻 璃。 如第2圖中所示，該掃描線2及資料線3爲以棋盤狀 圖案配置之電極線路，以及該薄膜電晶體4(TFT開關）係鄰 近於每一交叉點而形成。該TFT開關4爲一開關元件，以 及其源極與汲極係分別連接至該資料線3與連接電極1 3。 該資料線3爲該TFT開關4之源極電極以及該連接電極} 3 爲汲極電極。亦即，該資料線3包括一直線部分作爲一信 -10- 200924182 號線’以及一延伸部分以形成該TFT開關4，以及設置該 連接線1 3使得該TFT開關4連至該電荷儲存電容器5。 該閘極絕緣薄膜15係由SiNx、SiOx或類似物所製成。 設置該閘極絕緣薄膜1 5以覆蓋該掃描線2與C s電極1 4， 並且其於該掃描線2覆蓋部分係作爲該TFT開關4之閘極 絕緣薄膜，以及其於該C s電極1 4覆蓋部分係作爲該電荷 儲存電容器5之介電層。亦即，該電荷儲存電容器5爲相 同於該掃描線2與該連接電極1 3之層中所形成之該C s電 極14之疊置區域。須注意的是，該閘極絕緣薄膜1 5之材 料並不侷限於SiNx、SiOx，惟其組合可同時用在掃描線2 與Cs電極14之陽極電鍍膜。 該通道層（i層）8爲該TFT開關4之通道部，以及該資 料線與連接電極1 3之間的電流路徑。該接觸層（n +層）9於 該資料線3與連接電極1 3間提供一接點。 該絕緣保護薄膜1 7係形成於該資料線3與連接電極1 3 上方，亦即，大體上於該玻璃基板1之整個表面（大體上於 整個區域上方）上方。此可保護該連接電極1 3與資料線3， 以及於其間提供一電氣絕緣隔離。該絕緣保護薄膜17於一 預定位置處具有一接觸孔16’亦即’跨過該電容器5面向 該Cs電極14之於該連接電極13之一部分上方的位置。 該電荷收集電極1 1爲一透明導電非晶氧化物薄膜。形 成該電荷收集電極11以塡入該接觸孔16並堆疊於該資料 線3與連接電極1 3上方。該電荷收集電極1 1係與該半導 體層6電氣通信，以可收集該半導體層6中所產生的電荷。 該內層絕緣薄膜12爲一有機絕緣薄膜並對該TFT開關 200924182 4提供一電氣絕緣隔離。關於該有機絕緣薄膜之材 如，可使用丙稀酸樹脂。該接觸孔穿過該內層絕緣5 以及該電荷收集電極11並連接至該連接電極13。 在此，如上所述，該內層絕緣薄膜1 2(其爲以上 架構之該TFT陣列基板1〇之最上層）係由一有機絕 所構成。於該內層絕緣薄膜1 2上直接堆疊該絕緣接 25將造成由一有機絕緣薄膜所構成之該內層絕緣ί 與該絕緣接合構件2 5之間的接合強度不充分，使得 溫度改變時，該絕緣接合構件25會因該TFT陣列基 半導體層6、以及絕緣接合構件25之間的線性膨脹 差異，而自該TFT陣列基板10脫離。此即例如，該 2或資料線3中所帶來沿面放電及線路毀壞之問題。 透過該絕緣接合構件25接合至該TFT陣列基板10 護基板1 8可能會從那裡脫離。 因此，依照本實施例之該輻射影像檢測器中， 陣列基板1 0及絕緣接合構件25係透過一無機絕緣: 來接合，如第1圖中所示。至於該無機絕緣薄膜195 例如，可較佳的爲S i N X，但也可使用S i Ο X。經由本 發明人評估管理後之結果顯示：該絕緣接合構件25 絕緣薄膜之間的黏性係大於該絕緣接合構件25與 緣薄膜之間的黏性。該評估結果顯示於下表1中。 依照本實施例之結構可防止該絕緣接合構件25自該 列基板1 0脫離。因此’該結構也可防止透過該絕緣 件2 5而接合至該T F T陣列基板1 〇的該保護基板1 8 脫離。 料，例 蓴膜12 述方式 緣薄膜 合構件 I膜12 當發生 板1 0、 係數之 掃描線 此外， 之該保 該TFT 薄膜19 :材料， 發明之 與無機 有機絕 因此， TFT陣 接合構 從那裡 -12- 200924182 表1 保護基板/絕緣接合構件（環氧基）/tft陣列黏性BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image detector having an active matrix substrate, wherein the active matrix substrate has a plurality of switching elements disposed thereon. [Prior Art] In recent years, a flat panel detector (FPD) has been practically applied. The FPD includes an active matrix substrate on which a plurality of switching elements are disposed and an X-ray photosensitive layer is stacked thereon, and the X-ray data can be directly converted into digital data. This FPD is superior to conventional imaging boards because it allows for confirmation of animations and instant confirmation of images. One of such FPSs is, for example, an image detector as shown in Fig. 17 proposed in Japanese Patent No. 3 73 3 3 4 3 . The image detector proposed in Japanese Patent No. 3 73 3 3 4 3 includes a TFT array substrate 1 having a plurality of TFT switches arranged in two dimensions; a semiconductor layer 丨丨6, which is in accordance with The electromagnetic waves incident thereon generate charges and are stacked on the TFT array substrate 100 such that the charges are read by the TFT array substrate 1; an upper electrode 117 is stacked on the semiconductor layer 116. 118, stacked over the semiconductor layer 116 and the upper electrode 117 to cover it; and a resin material 119 which is interposed between the semiconductor layer 1 16 / the upper electrode 1 17 and the protective substrate 1 18 , as shown in Figure 17. When the image detection is performed using the image detector described in Japanese Patent No. 3 73 3 3 4 3, a high voltage is applied to the upper electrode 1 17 . This causes a creeping discharge from the upper electrode through the surface of the semiconductor layer 116 to the line of the TFT array substrate 100, which may cause the line to be destroyed. However, if the 17th part of 200924182 covers the material 1 1 9 , the interface line damage is due to the tree protection 100, and its TFT array is organic. The organically-strength-strength TFT array can be prevented by the use of the resin material 1 1 9 at the end of the semiconductor layer 11 6 as shown in the invention. The bonding strength between the resin material and the TFT array substrate 1 in the image detector of the patent No. 37 3 7 343 is insufficient, and the temperature is changed to the resin material and the TFT array substrate 1 The problem of the linear expansion caused by the separation between the two will cause creeping discharge or damage. In the image detector of Japanese Patent No. 3737 343, if the detachment of the grease material 119 from the TFT array substrate 1 ,, the substrate 118 is bonded to the TFT array substrate only by the contact surface thereof. The lack of bonding strength causes the protective substrate 118 to be detached. Generally speaking, it is necessary to provide a thickness of 1 to an edge layer of an organic material on the column substrate under the charge collecting electrode of the TFT array substrate to flatten the deposition surface of the TFT array substrate. The uppermost surface of the TFT array substrate is composed of a rim material, the connection between the resin material and the organic insulating material is weak, and the interface between the resin material and the column substrate 1 最终 will eventually end due to temperature change. The detachment that causes linear expansion above will then cause creeping discharge or line damage. In view of the above, it is an object of the present invention to provide an image detection which prevents the resin material from being detached from the active matrix substrate. The image detector of the invention comprises: an active matrix substrate having a substrate on which a plurality of switching elements are disposed; a semiconductor layer which generates charges according to electromagnetic waves representing the image information irradiated on the 200924182, and stacked on the active matrix Forming, on the substrate, the charges are read by the active matrix substrate; a protective substrate disposed opposite the active matrix substrate; and an insulating bonding member bonding the protective substrate to the active matrix substrate, wherein the insulating bonding member The active matrix substrate is bonded to the active matrix substrate through an inorganic insulating film disposed in a region around the semiconductor layer. In the image sensor of the present invention, the protective substrate is bonded to the active matrix substrate through an organic insulating film. Further, the active matrix substrate may include an organic insulating film having a plurality of openings at a bonding region having the insulating bonding member; and an inorganic insulating film may be disposed at the openings of the organic insulating film. In addition, the opening of the organic insulating film may be formed such that a contact area of the insulating bonding member and the inorganic insulating film passes through the openings to correspond to 20% of a contact area of the insulating bonding member and the active matrix substrate. Up to 80%. Furthermore, the active matrix substrate may include a plurality of signal lines, and an organic insulating film that may be disposed over or adjacent to the signal lines, and the inorganic insulating film, which may be disposed in addition to the organic film In the area outside the area of the insulating film. Further, a contact area of the insulating bonding member with the inorganic insulating film may correspond to 20 to 80% of a contact area of the insulating bonding member with the active matrix substrate. Further, the inorganic insulating film may be a Si Nx film. According to the image detector of the present invention, the insulating bonding member is bonded to the active matrix substrate through the inorganic insulating film disposed in a region in the vicinity of the periphery of the semiconductor layer, so that the insulating bonding member can be improved and activated. Viscosity between matrix substrates. Therefore, when the temperature change occurs, the insulating joint member can be prevented from being detached due to the linear expansion, so that the line damage caused by the creeping discharge or the like can be appropriately prevented. In addition, the adhesion between the insulating bonding member and the active matrix substrate allows the protective substrate to be properly bonded to the active matrix substrate, wherein the protective substrate is bonded to the active matrix substrate through the insulating bonding member. In the image detector of the present invention, the protective substrate and the active matrix substrate are temporarily bonded by a bonding agent, and wherein the protective substrate is bonded to the active matrix substrate through an organic insulating film, thereby reducing The effect on the underlying layer of the active matrix substrate. Further, the active matrix includes an organic insulating film having a plurality of openings at a bonding region with the insulating bonding member, and an inorganic insulating film disposed at the openings of the organic insulating film, compared to an inorganic insulating film The film is disposed on the entire contact surface of the insulating joint member and the active matrix substrate, and the viscosity can be further improved by the irregularly generated openings. Furthermore, an organic insulating film is disposed on the signal lines of the active matrix substrate or adjacent regions thereof, and an inorganic insulating film is disposed in a region other than the region where the organic insulating film is disposed to reduce the active matrix. The creeping of the voltage applied to the signal lines by the electrodes above the substrate, and at the same time, the adhesion between the insulating bonded member and the active matrix substrate can be improved. [Embodiment] Hereinafter, a radiation image detector which is applied to the first embodiment of the image detecting 200924182 of the present invention will be described with reference to the accompanying drawings. Figure 1 illustrates the schematic structure of the image detector. As shown in FIG. 1, the radiation image detector includes a substrate 10 having a substrate body layer 6 on which a plurality of TFT switches are disposed, which generate charges according to radiation image information illuminating thereon, and are stacked thereon. The TFT array substrate 10 is read by the TFT array substrate 10; an upper electrode 7 is stacked over the layer 6; an insulating bonding member 25 is disposed to cover the semiconductor surrounding portion and the upper portion of the upper electrode 7, and After bonding a protective group, it is explained to the TFT array substrate 10; and the protective substrate is on the insulating bonding member 25. The semiconductor layer generates a complex charge (electron-hole) when irradiated with an electromagnetic wave such as X-ray. That is, the semiconductor layer 6 is waveguide-conducting and is used to convert radiation image information representing X-rays. The semiconductor layer 6 is composed of, for example, a-Se which is mainly composed of a selenium crystal. Here, the term "mainly composed of selenium" means 50% selenium content. The characteristics of the semiconductor layer 6 tend to be significantly degraded with the environment, requiring a particular type of masking to prevent contamination of impurities and moisture. Since a bias of 1 to 10 kV is applied to the upper electrode 7, it is necessary to have sufficient pressure resistance. Therefore, the protective substrate 18 is provided in the radiator of this embodiment. Preferably, the protective substrate 18 is made of the same material as the substrate of the TFT 10 and has the same plate thickness. In the present radiation image detector, a non-alkaline glass of the thickness of 0.7 mm is used for the radiation pattern TFT array IJ; a half-conducting electromagnetic wave is charged with the semiconductor body layer 6: a plate 18 (slightly stacked on the 6 therein) The electromagnetic component is not lower than the low value of the charge component, so that it also requires the image detection array substrate embodiment. 200924182 Next, the insulating bonding member 2 5 ' is provided to bond the protective substrate !8 to The TFT array substrate 10' and the creeping discharge between the upper electrode 7 and the TFT array substrate 10. The insulating joint member 25 is made of an epoxy group material. This will now be described in detail with reference to FIGS. 2 and 3. The TFT array substrate 1 includes a plurality of pixels arranged in two dimensions, each having a TFT switch, wherein FIG. 2 is a plan view showing a pixel, and FIG. 3 is a view along the second figure. A cross-sectional view of the line 3-3. As shown in Fig. 3, the TFT array substrate 1 includes a glass substrate 1, a scanning line 2, a charge storage capacitor electrode (Cs electrode) 14, and a noise insulating film 15. Connecting electrode 13. A channel layer 8, a contact layer 9, a data line 3, an insulating protective film 17, an inner insulating film 12, and a charge collecting electrode 11. In addition, a thin film transistor 4 is used The scan line 2, the gate insulating film 15, the data line 3, the connection electrode 13, the channel layer 8, the contact layer 9, and the like, and a charge storage capacitor (Cs) 5 are composed of the Cs electrode 14, the gate insulating film. The glass substrate 1 is a support substrate, which is, for example, a non-alkaline glass. As shown in FIG. 2, the scan line 2 and the data line 3 are in a checkerboard shape. The electrode line of the pattern arrangement, and the thin film transistor 4 (TFT switch) are formed adjacent to each intersection. The TFT switch 4 is a switching element, and the source and the drain are respectively connected to the data line 3 And connecting the electrode 13. The data line 3 is the source electrode of the TFT switch 4 and the connection electrode} 3 is a drain electrode. That is, the data line 3 includes a straight line portion as a letter-10-200924182' And an extension portion to form the TFT switch 4, and the connection line 1 is disposed 3, the TFT switch 4 is connected to the charge storage capacitor 5. The gate insulating film 15 is made of SiNx, SiOx or the like. The gate insulating film 15 is provided to cover the scan line 2 and the C s electrode. 1 4, and the cover portion of the scan line 2 serves as a gate insulating film of the TFT switch 4, and the cover portion of the Cs electrode 14 serves as a dielectric layer of the charge storage capacitor 5. That is, The charge storage capacitor 5 is an overlap region of the C s electrode 14 formed in the layer of the scan line 2 and the connection electrode 13 . It should be noted that the material of the gate insulating film 15 is not limited to SiNx or SiOx, but the combination thereof can be used for the anodized film of the scanning line 2 and the Cs electrode 14 at the same time. The channel layer (i layer) 8 is a channel portion of the TFT switch 4, and a current path between the data line and the connection electrode 13. The contact layer (n + layer) 9 provides a contact between the data line 3 and the connection electrode 13. The insulating protective film 17 is formed over the data line 3 and the connection electrode 1 3, that is, substantially over the entire surface of the glass substrate 1 (above substantially over the entire area). This protects the connection electrode 13 from the data line 3 and provides an electrically isolated isolation therebetween. The insulating protective film 17 has a contact hole 16' at a predetermined position, i.e., a position across the capacitor 5 facing the Cs electrode 14 above a portion of the connection electrode 13. The charge collecting electrode 11 is a transparent conductive amorphous oxide film. The charge collecting electrode 11 is formed to be inserted into the contact hole 16 and stacked above the data line 3 and the connection electrode 13. The charge collecting electrode 11 is in electrical communication with the semiconductor layer 6 to collect charges generated in the semiconductor layer 6. The inner insulating film 12 is an organic insulating film and provides an electrical insulation isolation for the TFT switch 200924182 4 . Regarding the material of the organic insulating film, for example, an acrylic resin can be used. The contact hole passes through the inner layer insulating 5 and the charge collecting electrode 11 and is connected to the connecting electrode 13. Here, as described above, the inner insulating film 12 (which is the uppermost layer of the TFT array substrate 1 of the above structure) is composed of an organic material. When the insulating layer 25 is directly stacked on the inner insulating film 12, the bonding strength between the inner layer insulating layer ί and the insulating bonding member 25 composed of an organic insulating film is insufficient, so that when the temperature is changed, The insulating bonding member 25 is detached from the TFT array substrate 10 due to a linear expansion difference between the TFT array-based semiconductor layer 6 and the insulating bonding member 25. This is, for example, the problem of creeping discharge and line destruction caused by the 2 or the data line 3. Bonding to the TFT array substrate 10 through the insulating bonding member 25 may be detached therefrom. Therefore, in the radiation image detector according to the present embodiment, the array substrate 10 and the insulating joint member 25 are joined by an inorganic insulation: as shown in Fig. 1. As the inorganic insulating film 195, for example, S i N X may be preferably used, but S i Ο X may also be used. As a result of evaluation by the inventors of the present invention, it was revealed that the adhesiveness between the insulating films of the insulating joint member 25 is larger than the viscosity between the insulating joint members 25 and the film. The results of this evaluation are shown in Table 1 below. The structure according to this embodiment can prevent the insulating joint member 25 from being detached from the column substrate 10. Therefore, the structure can also prevent the protective substrate 18 which is bonded to the TF T array substrate 1 through the insulating member 25 from being detached. For example, the film of the film is formed. When the film 10 is formed, the scanning line of the coefficient is generated. In addition, the TFT film 19 is made of a material, and the inorganic film is invented. Where -12- 200924182 Table 1 Protective substrate / insulation joint member (epoxy) / tft array viscosity
溫度改變At (9C) 有機絕緣薄膜 (平坦化薄膜） 無機絕緣薄膜(SiNx) 5 〇 〇 10 X 〇 15 X 〇 20 X X 取樣尺寸：4 X 4 c m (於整個表面上施加黏接樹脂）。 保護基板：0 · 7 m m厚度之非鹼性玻璃。 絕緣接合構件：1 m m厚度之熱固性環氧基樹脂。 TFT陣列基板：以於其上沈積有機或無機絕緣薄膜之0.7mm 厚度之非鹼性玻璃（因爲以評估爲目的，故沒有TFT陣列） 作取樣。 平坦化薄膜（或所謂的內層絕緣薄膜）之例示包括Hitach 化學有限公司之 HSG系列以及 Honeywell公司之 i _ ACCUGLASS的S〇G材料。至於該無機絕緣薄膜，一般係 以電漿CVD法所產生之SiNx。 第4圖爲說明所設置之該無機絕緣薄膜1 9之區域的俯 視圖。如第4圖中所示，在依照該第一實施例之輻射影像 檢測器中，該無機絕緣薄膜1 9係被設在該絕緣接合構件25 至該TFT陣列基板1 0之整個接合區域上，以及以一方式圍 住該半導體層6。 接著，將說明應用於本發明之影像檢測器之第二實施 例之輻射影像檢測器。第5圖爲第二實施例之輻射影像檢 -13- 200924182 測器之剖面視圖。 依照第二實施例之該影像檢測器於該保護基板1 8之 形狀上係不同於依照該第一實施例之該影像檢測器。如第 5圖中所示，第二實施例之該影像檢測器之保護基板丨8具 有一箱形形狀，以及該保護基板1 8之設置係用以覆蓋該半 導體層6與上電極7之整個側邊與上表面。接著，該保護 基板1 8透過該內層絕緣薄膜1 2與TFT陣列基板1 〇接合。 同樣在第二實施例之該影像檢測器中，一無機絕緣薄 膜1 9係被設置在該絕緣接合構件25至該TFT陣列基板1 0 之整個接合區域上，用以改善該絕緣接合構件25與該TFT 陣列基板1 0之間的黏性。設置該無機絕緣薄膜1 9以便將 該半導體層6圍住。第6圖爲說明其中設置該無機絕緣薄 膜1 9之區域之俯視圖。 第二實施例之該影像檢測器之其它結構係與該第一實 施例之輻射影像檢測器相同。 接著，將參照第7A至7F圖說明第二實施例之製造該 輻射影像檢測器之方法。 首先，如第7A圖中所示，形成TFT陣列基板10。在 此，透過微影之圖案化來形成一內層絕緣薄膜1 2，以便沒 有在圍繞配置有像素於其中之像素區域之區域中形成。接 著，於環狀區域中形成一無機絕緣薄膜19，其中該區域內 沒有設置該內層絕緣薄膜1 2。在此時，也形成一金屬圖案 22 ° 接著，如第7B圖中所示，藉由真空沈積於該TFT陣列 基板10之像素區域上沈積a-Se薄膜而形成一半導體層6。 -14- 200924182 此外’如第7C圖中所示，藉由真空沈積，於該半 層6上藉由沈積Au以形成一上電極7。 接著，如第7D圖中所示，黏接一電極23及一端子 以施加一高壓至該上電極7。該電極23可由Au沈積 或接合金屬帶來形成。 接著，如第7E圖中所示，於該TFT陣列基板10 置一保護基板18。在此，該保護基板18係被設在該內 緣薄膜12上並藉由一接合劑接合。 (； 最後，自設在該保護基板1 8中之通孔（沒有顯示） 由注射一環氧基樹脂以塡入該TFT陣列基板1〇與保護 1 8之間的間隔，形成一絕緣接合構件25。 在該第二實施例之輻射影像檢測器中，該保護基; 具有一箱形形狀，但其並不受限於此，以及例如，該 基板18之_部可以一肋狀構件及該上部可以一板狀 來形成。 接著，將說明應用於本發明之影像檢測器之第三 / 例之輻射影像檢測器。第8圖爲依照第三實施例之輻 k. 像檢測器之剖面視圖。 依照第三實施例之輻射影像檢測器係不同於依照 二實施例之輻射影像檢測器’其中，其於該半導體層 方更包括一底層20。一般係爲了某些目的而在該Se層 設置一特定層。該等目的之一係用以防止來自該電荷 電極之電荷（當施加正電壓至該上電極時爲電子’或者 加負電壓於其上時爲電洞）的注入。此可能降低該Se 雜訊。另一目的係用以控制該上層之S e薄膜之薄膜品 導體 24， 薄膜 上設 層絕 ，藉 基板 K 18 保護 構件 實施 射影 該第 6下 下方 收集 當施 層之 丨質。 -15- 200924182 一般來說，底層對於經沈積之薄膜的成長之影響甚鉅，並 且該經沈積之薄膜的特性與缺陷變動很大。經由本發明之 發明人評估管理之結果顯不：一穩定的Se層可藉由於SbaS: 層上沈積Se來獲得，勝過直接於一 TFT陣列基板上沈積。 如上所述，當該底層20與該TFT陣列基板1 〇之接合 部分爲一有機絕緣薄膜之內層絕緣薄膜12時，Sb2S3與該 有機絕緣薄膜之間的黏性是低的（其可能造成該脫離問 題），其中使用Sb2S3來形成該底層20。經由本發明之發明 ，' 人評估管理之結果顯示：Sb2S3與一無機絕緣薄膜間之黏性 係大於Sb2S3與一有機絕緣薄膜間之黏性。該評估結果顯示 於下表2中。 表2 保護基板/絕緣接合構件（環氧基）/Sb2S3/TFT陣列黏性Temperature change At (9C) Organic insulating film (flattening film) Inorganic insulating film (SiNx) 5 〇 〇 10 X 〇 15 X 〇 20 X X Sampling size: 4 X 4 c m (Adhesive resin is applied to the entire surface). Protective substrate: non-alkaline glass with a thickness of 0 · 7 m m. Insulating joint member: thermosetting epoxy resin having a thickness of 1 m. TFT array substrate: A non-alkaline glass having a thickness of 0.7 mm on which an organic or inorganic insulating film is deposited (because for the purpose of evaluation, there is no TFT array) for sampling. Examples of planarized films (or so-called inner insulating films) include the HSG series from Hitach Chemical Co., Ltd. and the S〇G materials from i _ ACCUGLASS from Honeywell. As for the inorganic insulating film, SiNx produced by a plasma CVD method is generally used. Fig. 4 is a plan view showing a region of the inorganic insulating film 19 which is provided. As shown in FIG. 4, in the radiation image detector according to the first embodiment, the inorganic insulating film 19 is provided on the entire bonding region of the insulating bonding member 25 to the TFT array substrate 10. And enclosing the semiconductor layer 6 in a manner. Next, a radiation image detector applied to the second embodiment of the image detector of the present invention will be explained. Fig. 5 is a cross-sectional view of the radiation image inspection of the second embodiment -13- 200924182. The image detector according to the second embodiment is different from the image detector according to the first embodiment in the shape of the protective substrate 18. As shown in FIG. 5, the protective substrate 8 of the image detector of the second embodiment has a box shape, and the protective substrate 18 is disposed to cover the entire semiconductor layer 6 and the upper electrode 7. Side and upper surface. Then, the protective substrate 18 is bonded to the TFT array substrate 1 through the inner insulating film 12 . Also in the image detector of the second embodiment, an inorganic insulating film 19 is provided over the entire bonding region of the insulating bonding member 25 to the TFT array substrate 10 for improving the insulating bonding member 25 and Viscosity between the TFT array substrates 10 . The inorganic insulating film 19 is provided to enclose the semiconductor layer 6. Fig. 6 is a plan view showing a region in which the inorganic insulating film 19 is disposed. The other structure of the image detector of the second embodiment is the same as that of the radiation image detector of the first embodiment. Next, a method of manufacturing the radiation image detector of the second embodiment will be described with reference to Figs. 7A to 7F. First, as shown in Fig. 7A, a TFT array substrate 10 is formed. Here, an inner insulating film 12 is formed by patterning of lithography so as not to be formed in a region surrounding a pixel region in which pixels are disposed. Next, an inorganic insulating film 19 is formed in the annular region, wherein the inner insulating film 12 is not provided in the region. At this time, a metal pattern 22 is also formed. Next, as shown in Fig. 7B, a semiconductor layer 6 is formed by depositing an a-Se thin film on the pixel region of the TFT array substrate 10 by vacuum deposition. Further, as shown in Fig. 7C, an upper electrode 7 is formed by depositing Au on the half layer 6 by vacuum deposition. Next, as shown in Fig. 7D, an electrode 23 and a terminal are bonded to apply a high voltage to the upper electrode 7. The electrode 23 can be formed by Au deposition or a bonding metal strip. Next, as shown in FIG. 7E, a protective substrate 18 is placed on the TFT array substrate 10. Here, the protective substrate 18 is provided on the inner peripheral film 12 and joined by a bonding agent. Finally, a through hole (not shown) provided in the protective substrate 18 is formed by injecting an epoxy resin to break into the space between the TFT array substrate 1 and the protective 18 to form an insulating joint member. 25. In the radiation image detector of the second embodiment, the protection group; has a box shape, but is not limited thereto, and for example, the portion of the substrate 18 may have a rib member and the The upper portion may be formed in a plate shape. Next, a third embodiment of the radiation image detector applied to the image detector of the present invention will be described. Fig. 8 is a cross-sectional view of the image detector according to the third embodiment. The radiation image detector according to the third embodiment is different from the radiation image detector according to the second embodiment, wherein it further includes a bottom layer 20 on the semiconductor layer. Generally, the layer is set in the layer for some purpose. a specific layer. One of the purposes is to prevent the injection of charge from the charge electrode (electron when a positive voltage is applied to the upper electrode or a hole when a negative voltage is applied thereto). The Se noise. Another One purpose is to control the film conductor 24 of the upper layer of the S e film, and the film is provided with a layer, and the substrate K 18 is used to perform the projecting. The sixth lower layer collects the enamel which is applied as a layer. -15- 200924182 In other words, the underlayer has a great influence on the growth of the deposited film, and the characteristics and defects of the deposited film vary greatly. The results of the evaluation by the inventors of the present invention are not obvious: a stable Se layer can be borrowed Since the deposition of Se on the SbaS: layer is achieved, it is better than deposition on a TFT array substrate. As described above, when the bonding portion of the underlayer 20 and the TFT array substrate 1 is an inner insulating film 12 of an organic insulating film, When the adhesion between the Sb2S3 and the organic insulating film is low (which may cause the detachment problem), Sb2S3 is used to form the underlayer 20. According to the invention of the present invention, the result of the human evaluation management shows: Sb2S3 and The adhesion between an inorganic insulating film is greater than the adhesion between Sb2S3 and an organic insulating film. The evaluation results are shown in Table 2. Table 2 Protective substrate / insulating joint member (ring Oxy)/Sb2S3/TFT array viscosity
溫度改變At (gC) 有機絕緣薄膜 (平坦化薄膜） 無機絕緣薄膜(SiNx) 5 〇 〇 10 X 〇 15 X 〇 20 X X 取樣尺寸：4x4cm(以黏接樹脂/於整個表面上沈積Sb2S3)。 保護基板：0.7 m m厚度之非鹼性玻璃。 絕緣接合構件：1 mm厚度之熱固性環氧基樹脂。 TFT陣列基板：以於其上沈積有機或無機絕緣薄膜之〇.7mm 厚度之非鹼性玻璃（因爲以評估爲目的，故沒有TFT陣列） 作取樣。 -16- 200924182 實際上，該Sb2S3位在Se層下方之整個區域上，但此 區域需要一有機絕緣薄膜，以便可不使用該無機絕緣薄 膜。然而，實際之面板評估顯示：於一周圍部分發生該薄 膜之脫離。因此，該整個面板之黏性可藉由強化該周圍部 分之黏性而獲得改善。 因此，如第8圖中所示，在該第三實施例之該輻射影 像檢測器中，該無機絕緣薄膜1 9係被形成於該TFT陣列基 板10之整個表面上，以及該底層20係透過該無機絕緣薄 膜19而被接合至該TFT陣列基板10。藉由上述方式配置 該無機絕緣薄膜19，可改善該底層20與TFT陣列基板1〇 之間的黏性。 如第二實施例，同樣在該第三實施例之該輻射影像檢 測器中，該無機絕緣薄膜1 9係以一方式被設置在該絕緣接 合構件25至該TFT陣列基板1 0之整個接合區域上，以圍 住該半導體層6，用以改善該絕緣接合構件25與該TFT陣 列基板1 0之間的黏性。第9圖爲說明該無機絕緣薄膜19 與該絕緣接合構件25之接觸區域之俯視圖。 如上所述，依照該第三實施例之該輻射影像檢測器之 TFT陣列基板1 〇係藉由下述方式形成：首先於該TFT陣列 基板10之整個表面上形成該無機絕緣薄膜19,以及接著藉 由微影之圖案化技術而於該無機絕緣薄膜1 9上形成該內 層絕緣薄膜1 2。該內層絕緣薄膜1 2係被圖案化以便沒有在 該像素區域之周圍區域中形成，以及於沒有形成該內層絕 緣薄膜1 2之區域中設置該絕緣接合構件25與該底層20。 第三實施例之該影像檢測器之其它結構係與該第二實 -17- 200924182 施例之輻射影像檢測器相同。 接著’將說明應用於本發明之影像檢測器之第四 例之輻射影像檢測器。第1 〇圖爲依照第四實施例之輻 像檢測器之剖面視圖。 在依照第四實施例之該輻射影像檢測器中，如該 實施例，該無機絕緣薄膜1 9係被形成於該T F T陣列 10之整個表面上，以及接著該內層絕緣薄膜12係經由 化而形成於該無機絕緣薄膜1 9上，但該圖案化方法係 於該第三實施。 第U圖係說明依照第四實施例之該輻射影像檢 之該TFT陣列基板10之該內層絕緣薄膜12之圖案。 1 1圖中所示’將依照第四實施例之該輻射影像檢測器 TFT陣列基板10之該內層絕緣薄膜12圖案化，使得 開口 1 2a形成於該TFT陣列基板1 〇之像素區域附近。 11圖中，由虛線標示之該半導體層6與上電極7之區 以上述方式圖案化該內層絕緣薄膜1 2以容許該 接合構件2 5經由該等開口 1 2 a而與該無機絕緣薄膜 觸’因而可改善該絕緣接合構件2 5與該無機絕緣薄， 之間的黏性。須注意的是，於第1 1圖中由橫盤狀圖案 示之該等部分爲該絕緣接合構件2 5接觸該無機絕緣 1 9之區域。較佳地是’形成該內層絕緣薄膜1 2之該等 1 2 a使得該絕緣接合構件2 5透過該等開口 1 2 a與該無 緣薄膜1 9之接觸區域，係相當於該絕緣接合構件2 5 TFT陣列基板10之接觸區域的20至80%，以及更佳 30 至 80%。 實施 射影 第三 基板 圖案 不同 測器 如第 之該 複數 在第 域。 絕緣 19接 1 19 所標 薄膜 開口 機絕 與該 地是 -18 - 200924182 如同第三實施例之該輻射影像檢測器，該內層絕緣薄 膜12之厚度爲1至3/im’右該內層絕緣薄膜12沒有設在 該TFT陣列基板1 0之像素區域附近之整個區域中，則將形 成具有1至3//m距離之大凹槽。於製造該TFT之微影製 程中，光阻薄膜之厚度（其中形成此大凹槽）變得不規則， 導致粗劣的ITO薄膜圖案化。 因此’該粗劣的圖案化可如該第四實施例般藉由於該 內層絕緣薄膜1 2中設置複數開口 1 2 a來補救，而非以如第 三實施例般於該TFT陣列基板1 0之像素區域附近之整個區 域中設置該內層絕緣薄膜1 2來取代。此外，於該TFT陣列 基板10之最上方表面上提供深度不平坦圖案可進一步改 善該接合強度。 注意到’可於該第四實施例之輻射影像檢測器中設置 如該第三實施例之該輻射影像檢測器中之一底層。 接著’將說明應用於本發明之影像檢測器之第五實施 例之輻射影像檢測器。第1 2圖爲依照第五實施例之輻射影 像檢測器之俯視圖。 雖然ί又有在弟一至桌五實施例中顯示，彳曰該輻射影像 檢測器之線路21 (諸如該掃描線2及資料線3)係自該像素區 域延伸至外部的四端’如第1 2圖中所示。以數千伏特等級 之高壓施加至該上電極7上’以及雖然該高壓非直接施加 至沒有設置該半導體層6之區域上’但於該區域與線路21 之間仍然會因沿面放電現象或類此現象而感受到數百伏 特。因此’在依照第五實施例之該輻射影像檢測器中，圖 案化該內層絕緣薄膜1 2以便降低該線路2丨上所感受到的 -19- 200924182 電壓。 更特別地’依照第五實施例之該輻射影像撿測器沿著 該等線路2 1切下之部分剖面視圖係顯示於第1 3圖中，以 及依照第五實施例之該輻射影像檢測器沿著不包括該等線 路2 1之之位置處切下之部分剖面視圖係顯示於第1 4圖中。 如第1 3及1 4圖中所示，在依照第五實施例之該輻射 影像檢測器之該TFT陣列基板1 0中，該等線路2丨係形成 於該玻璃基板1上，接著於其上形成該無機絕緣薄膜1 9， ( 以及於其上形成該內層絕緣薄膜1 2。接著，如第1 3圖中所 示，該內層絕緣薄膜1 2係被形成於該等線路2 1上方，但 其沒有在該等線路2 1所沒有延伸到之區域上方形成。因 此’依照第五實施例之該輻射影像檢測器之該TFT陣列基 板10之該內層絕緣薄膜12具有如第15圖中所示之圖案。 在此方式下’在該第五實施例之該幅射影像檢測器 中，該內層絕緣薄膜1 2係被形成於第1 5圖中所示之圖案 中’以便針對該等線路2 1所延伸之區域設置該內層絕緣薄 I 膜1 2 ’以降低該等線路21所感受到的電壓，同時針對該等 線路2 1所沒有延伸之區域不設置該內層絕緣薄膜1 2，以容 許該TFT陣列基板1 0、該絕緣接合構件25、以及該底層 20透過該無機絕緣構件1 9而被接合，使得該絕緣接合構件 25與該底層20至該TFT陣列基板1 0之黏性可獲得改善。 須注意者，於第1 2圖中所標示之棋盤狀圖案之部分爲該絕 緣接合構件25與該TFT陣列基板1 〇之接觸區域。 如第五實施例之該輻射影像檢測器，該絕緣接合構件 25與該無機絕緣構件1 9之接觸區域相當於該絕緣接合構 -20- 200924182 件25與該TFT陣列基板10之接觸區域之20至80%，較佳 爲25至65%，以及更佳約爲45 %是可期望的，其中經由圖 案化形成該內層絕緣薄膜1 2。 如第1 2圖中所示，第五實施例之該輻射影像檢測器爲 一種其中該等線路朝向該等四端延伸之檢測器。然而，其 也爲其中該等線路朝向二端延伸之輻射影像檢測器，該內 層絕緣薄膜可被形成於該等線路上，以及沒有形成於該等 線路所沒有延伸到的區域上方。在此情況下，該絕緣接合 構件與該無機絕緣薄膜之接觸區域相當於該絕緣接合構件 與該TFT陣列基板之接觸區域之50至80%是可期望的。爲 了平衡該黏性，該範圍可爲25至65%，以及更佳地約爲 73%。 在第五實施例之該輻射影像檢測器中，該內層絕緣薄 膜1 2係被直接設置於該TFT陣列基板1 0上之該等線路2 1 上方，但其中該等線路之間距是小的，該內層絕緣薄膜i 2 可被形成於如第1 6圖中所示之圖案中，以便將該內層絕緣 薄膜1 2設置在鄰近於該等線路2 1之區域上方。 依照上述實施例之該等輻射影像檢測器中，使用具有 配置有多數TFT開關於其上之基板的TFT陣列基板，惟本 發明亦可應用在具有一主動矩陣基板之輻射影像檢測器， 其中該主動矩陣基板具有配置有多數切換元件於其上（諸 如MOS開關）之基板。 【圖式簡單說明】 第1圖爲應用於本發明之影像檢測器之第一實施例之 輻射影像檢測器之剖面視圖，說明其示意結構。 -21 - 200924182 第2圖爲輻射影像檢測器之平面視圖，說明一像素之 結構。 第3圖爲輻射影像檢測器之剖面視圖，說明一像素之 結構。 第4圖爲依照第一實施例之輻射影像檢測器之俯視 圖，說明一設有無機絕緣薄膜之區域。 第5圖爲應用於本發明之影像檢測器之第一實施例之 輻射影像檢測器之剖面視圖，說明其示意結構。 第6圖爲依照第二實施例之輻射影像檢測器之俯視 圖，說明一設有無機絕緣薄膜之區域。 第7A至7F圖爲說明依照第二實施例之製造輻射影像 檢測器之方法。 第8圖爲應用於本發明之影像檢測器之第三實施例之 輻射影像檢測器之剖面視圖，說明其示意結構。 第9圖爲依照第三實施例之輻射影像檢測器之俯視 圖，說明一無機絕緣薄膜與一絕緣接合構件之接觸區域。 第1 0圖爲應用於本發明之影像檢測器之第四實施例 之輻射影像檢測器之剖面視圖，說明其示意結構。 第1 1圖說明依照第四實施例之輻射影像檢測器之TFT 陣列基板之層間絕緣層圖案。 第1 2圖爲應用於本發明之影像檢測器之第五實施例 之輻射影像檢測器之俯視圖，說明其示意結構。 第1 3圖爲依照第五實施例沿著線路切下之輻射影像 檢測器之部分剖面視圖。 第1 4圖爲依照第五實施例於不包括前述線路之位置 -22- 200924182 處切下之幅射影像檢測器之部分剖面視圖。 第1 5圖說明依照第五實施例之輻射影像檢測器之TFT 陣列基板之層間絕緣層圖案。 第1 6圖說明依照另一實施例之層間絕緣層圖案。 第1 7圖爲傳統輻射影像檢測器之剖面視圖，說明其示 思結構。 【主要元件符號說明】 1 玻 璃 基 板 2 掃 描 線 3 資 料 線 4 薄 膜 電 晶 體 Ηϋ 5 電 荷 儲 存 電 容器 6、] :1 6 半 導 體 層 7、] ί 1 7 上 電 極 9 接 觸 層 10、 100 TFT 陣 列 基 板 11 電 荷 收 集 電 極 12 內 層 絕 緣 薄 膜 12a 開 口 13 接 觸 電 極 14 Cs 電 〔極 15 閘 極 絕 緣 薄 膜 16 接 觸 孔 17 絕 緣 保 護 薄 膜 18、 118 保 護 基 板 -23- 200924182 19 Μ •η \、 機 絕 緣 薄 膜 20 底 層 2 1 線 路 22 金 屬 圖 案 23 電 極 24 端 子 25 絕 緣 接 合 構 件 119 樹 脂 材 料 t -24-Temperature change At (gC) Organic insulating film (flattening film) Inorganic insulating film (SiNx) 5 〇 〇 10 X 〇 15 X 〇 20 X X Sampling size: 4x4cm (bonding resin / depositing Sb2S3 on the entire surface). Protective substrate: non-alkaline glass with a thickness of 0.7 m. Insulating joint member: thermosetting epoxy resin with a thickness of 1 mm. TFT array substrate: A non-alkaline glass having a thickness of 〇.7 mm on which an organic or inorganic insulating film is deposited (because for the purpose of evaluation, there is no TFT array) for sampling. -16- 200924182 Actually, the Sb2S3 is located over the entire area under the Se layer, but this area requires an organic insulating film so that the inorganic insulating film can be omitted. However, the actual panel evaluation showed that the film was detached in a surrounding portion. Therefore, the viscosity of the entire panel can be improved by strengthening the viscosity of the peripheral portion. Therefore, as shown in FIG. 8, in the radiation image detector of the third embodiment, the inorganic insulating film 19 is formed on the entire surface of the TFT array substrate 10, and the bottom layer 20 is transmitted through The inorganic insulating film 19 is bonded to the TFT array substrate 10. By arranging the inorganic insulating film 19 in the above manner, the adhesion between the underlayer 20 and the TFT array substrate 1A can be improved. As in the second embodiment, also in the radiation image detector of the third embodiment, the inorganic insulating film 19 is disposed in a manner of the entire bonding region of the insulating bonding member 25 to the TFT array substrate 10 in a manner The semiconductor layer 6 is surrounded to improve the adhesion between the insulating bonding member 25 and the TFT array substrate 10. Fig. 9 is a plan view showing a contact area of the inorganic insulating film 19 and the insulating joint member 25. As described above, the TFT array substrate 1 of the radiation image detector according to the third embodiment is formed by first forming the inorganic insulating film 19 on the entire surface of the TFT array substrate 10, and then The inner insulating film 12 is formed on the inorganic insulating film 19 by a patterning technique of lithography. The inner insulating film 12 is patterned so as not to be formed in the peripheral region of the pixel region, and the insulating bonding member 25 and the underlayer 20 are provided in a region where the inner insulating film 12 is not formed. The other structure of the image detector of the third embodiment is the same as the radiation image detector of the second embodiment of the invention -17-200924182. Next, a radiation image detector of a fourth example applied to the image detector of the present invention will be described. Fig. 1 is a cross-sectional view of the radiation detector according to the fourth embodiment. In the radiation image detector according to the fourth embodiment, as in this embodiment, the inorganic insulating film 19 is formed on the entire surface of the TFT array 10, and then the inner insulating film 12 is passed through It is formed on the inorganic insulating film 19, but the patterning method is in the third embodiment. Fig. U is a view showing the pattern of the inner insulating film 12 of the TFT array substrate 10 in accordance with the radiation image of the fourth embodiment. The inner insulating film 12 of the radiation image detector TFT array substrate 10 according to the fourth embodiment is patterned such that the opening 12 2 is formed in the vicinity of the pixel region of the TFT array substrate 1 . In the figure, the region of the semiconductor layer 6 and the upper electrode 7 indicated by a broken line is patterned in the above manner to allow the bonding member 25 to pass through the inorganic insulating film via the openings 1 2 a. The contact can thus improve the adhesion between the insulating joint member 25 and the inorganic insulation. It is to be noted that the portions indicated by the lateral disk pattern in Fig. 1 are the regions where the insulating joint member 25 contacts the inorganic insulating member 19. Preferably, the formation of the inner insulating film 1 2 such that the insulating bonding member 25 penetrates the contact area of the opening 1 2 a with the edgeless film 19 corresponds to the insulating bonding member. 2 5 to 80%, and more preferably 30 to 80%, of the contact area of the TFT array substrate 10. The projecting of the third substrate pattern is performed by different detectors such as the first plurality in the first field. Insulation 19 to 19 The film opening machine is absolutely -18 - 200924182. Like the radiation image detector of the third embodiment, the inner insulating film 12 has a thickness of 1 to 3 / im 'right inner layer If the insulating film 12 is not provided in the entire region in the vicinity of the pixel region of the TFT array substrate 10, a large groove having a distance of 1 to 3 //m will be formed. In the lithography process for fabricating the TFT, the thickness of the photoresist film in which the large grooves are formed becomes irregular, resulting in patterning of the poor ITO film. Therefore, the poor patterning can be remedied by providing the plurality of openings 1 2 a in the inner insulating film 12 as in the fourth embodiment, instead of the TFT array substrate 10 as in the third embodiment. The inner insulating film 12 is provided in the entire region near the pixel region instead. Further, providing a depth uneven pattern on the uppermost surface of the TFT array substrate 10 can further improve the joint strength. It is noted that one of the radiation image detectors of the third embodiment can be disposed in the radiation image detector of the fourth embodiment. Next, a radiation image detector of a fifth embodiment applied to the image detector of the present invention will be described. Fig. 12 is a plan view of the radiation image detector according to the fifth embodiment. Although ί is also shown in the embodiment of the first to fifth tables, the line 21 of the radiation image detector (such as the scan line 2 and the data line 3) extends from the pixel area to the outer four ends as the first 2 is shown in the figure. Applying a high voltage of several thousand volts to the upper electrode 7' and although the high voltage is not directly applied to the region where the semiconductor layer 6 is not provided, but there is still a phenomenon of creeping discharge or the like between the region and the line 21. This phenomenon feels hundreds of volts. Therefore, in the radiation image detector according to the fifth embodiment, the inner insulating film 12 is patterned to lower the voltage of -19 - 200924182 which is felt on the line 2 . More particularly, the partial cross-sectional view of the radiation image detector cut along the line 2 1 in accordance with the fifth embodiment is shown in FIG. 3, and the radiation image detector according to the fifth embodiment A partial cross-sectional view taken along a position excluding the line 2 1 is shown in Fig. 14. As shown in FIGS. 13 and 14, in the TFT array substrate 10 of the radiation image detector according to the fifth embodiment, the lines 2 are formed on the glass substrate 1, followed by The inorganic insulating film 197 is formed thereon (and the inner insulating film 12 is formed thereon. Then, as shown in FIG. 3, the inner insulating film 12 is formed on the lines 2 1 Above, but it is not formed over the area where the lines 2 1 are not extended. Therefore, the inner insulating film 12 of the TFT array substrate 10 of the radiation image detector according to the fifth embodiment has the 15th The pattern shown in the figure. In this mode, in the radiation image detector of the fifth embodiment, the inner insulating film 12 is formed in the pattern shown in FIG. The inner insulating thin I film 1 2 ′ is disposed in an area extending from the lines 2 1 to reduce the voltage experienced by the lines 21 , and the inner layer is not provided for the areas where the lines 2 1 are not extended. a film 1 2 to allow the TFT array substrate 10 and the insulating joint member 25 And the underlayer 20 is bonded through the inorganic insulating member 19, so that the adhesion between the insulating bonding member 25 and the underlayer 20 to the TFT array substrate 10 can be improved. Note that in FIG. The portion of the checkerboard pattern is the contact area of the insulating bonding member 25 with the TFT array substrate 1. As the radiation image detector of the fifth embodiment, the insulating bonding member 25 is in contact with the inorganic insulating member 19. The area is equivalent to 20 to 80%, preferably 25 to 65%, and more preferably about 45% of the contact area of the insulating bonded structure -20-200924182 25 with the TFT array substrate 10, which is desirable via The inner insulating film 12 is patterned to form. As shown in Fig. 2, the radiation image detector of the fifth embodiment is a detector in which the lines extend toward the four ends. However, For a radiation image detector in which the lines extend toward the two ends, the inner insulating film may be formed on the lines and not formed over an area to which the lines do not extend. In this case, Insulated connection It is desirable that the contact area of the bonding member with the inorganic insulating film is 50 to 80% of the contact area of the insulating bonding member with the TFT array substrate. To balance the viscosity, the range may be 25 to 65%, and More preferably, it is about 73%. In the radiation image detector of the fifth embodiment, the inner insulating film 12 is directly disposed above the lines 2 1 on the TFT array substrate 10, but The distance between the lines is small, and the inner insulating film i 2 may be formed in a pattern as shown in Fig. 16 so that the inner insulating film 12 is disposed adjacent to the lines 2 1 Above the area. In the radiation image detector according to the above embodiment, a TFT array substrate having a substrate on which a plurality of TFT switches are disposed is used, but the present invention can also be applied to a radiation image detector having an active matrix substrate, wherein The active matrix substrate has a substrate on which a plurality of switching elements are disposed, such as MOS switches. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a radiation image detector applied to a first embodiment of the image detector of the present invention, illustrating a schematic structure thereof. -21 - 200924182 Figure 2 is a plan view of a radiation image detector illustrating the structure of a pixel. Figure 3 is a cross-sectional view of the radiation image detector illustrating the structure of a pixel. Fig. 4 is a plan view of the radiation image detector according to the first embodiment, showing a region in which an inorganic insulating film is provided. Fig. 5 is a cross-sectional view showing a radiation image detector applied to the first embodiment of the image detector of the present invention, illustrating a schematic structure thereof. Fig. 6 is a plan view of the radiation image detector according to the second embodiment, showing a region in which an inorganic insulating film is provided. 7A to 7F are views for explaining a method of manufacturing a radiation image detector in accordance with a second embodiment. Fig. 8 is a cross-sectional view showing a radiation image detector applied to a third embodiment of the image detector of the present invention, illustrating a schematic structure thereof. Fig. 9 is a plan view of a radiation image detector according to a third embodiment, showing a contact area of an inorganic insulating film and an insulating joint member. Fig. 10 is a cross-sectional view showing a radiation image detector applied to a fourth embodiment of the image detector of the present invention, illustrating a schematic structure thereof. Fig. 1 is a view showing an interlayer insulating layer pattern of a TFT array substrate of a radiation image detector according to a fourth embodiment. Fig. 1 is a plan view showing a radiation image detector applied to a fifth embodiment of the image detector of the present invention, illustrating a schematic structure thereof. Figure 13 is a partial cross-sectional view of the radiation image detector cut along the line in accordance with the fifth embodiment. Figure 14 is a partial cross-sectional view of the radiation image detector cut at a position -22-200924182 excluding the aforementioned line in accordance with the fifth embodiment. Fig. 15 is a view showing an interlayer insulating layer pattern of the TFT array substrate of the radiation image detector according to the fifth embodiment. Figure 16 illustrates an interlayer insulating layer pattern in accordance with another embodiment. Figure 17 is a cross-sectional view of a conventional radiation image detector illustrating its schematic structure. [Description of main component symbols] 1 Glass substrate 2 Scanning line 3 Data line 4 Thin film transistor Ηϋ 5 Charge storage capacitor 6,]: 1 6 Semiconductor layer 7, ί 1 7 Upper electrode 9 Contact layer 10, 100 TFT array substrate 11 Charge collecting electrode 12 inner insulating film 12a opening 13 contact electrode 14 Cs electric [pole 15 gate insulating film 16 contact hole 17 insulating protective film 18, 118 protective substrate -23- 200924182 19 Μ • η \, machine insulating film 20 bottom layer 2 1 Line 22 Metal pattern 23 Electrode 24 Terminal 25 Insulation joint member 119 Resin material t -24-