JP2007214236A - X-ray detector and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an X-ray detector 1 flattening the surface of an active matrix board 3 by a technique at a low cost, and being capable of improving the characteristics of an X-ray photoconductive layer 4. <P>SOLUTION: Flattening layers 21 having the quality of the material higher than that of the surface of the active matrix board 3 in a removing property by an etching is formed on the surface with a fitted pixel electrode 9 for the active matrix board 3. The flattening layers 21 up to the surface of the pixel electrode 9 are removed by the etching, the flattening layers 21 are left in recesses 20 indented from the surface of the active matrix board 3, and the surface of the active matrix board 3 is flattened. The surface of the active matrix board 3 is flattened by the technique at the low cost, and the characteristics of the X-ray photoconductive layer 4 are improved. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an X-ray detector for detecting X-rays and an X-ray detector.

  As a new generation image detector for X-ray diagnosis, an active matrix type planar X-ray detector is attracting attention. In this X-ray detector, an X-ray image or a real-time X-ray image is output as a digital signal by detecting the irradiated X-ray. In addition, since this X-ray detector is a solid state detector, it is highly expected in terms of image quality performance and stability.

  As the first application for practical use, it has been developed for the chest or general radiography for collecting still images with a relatively large dose, and has been commercialized in recent years. Commercialization is expected in the near future for applications in the fields of circulatory organs and digestive organs that require higher performance and real-time moving images of 30 frames per second under fluoroscopic dose. For this moving image application, improvement of S / N and real-time processing technology of minute signals are important development items.

  This type of X-ray detector is roughly divided into two types, a direct method and an indirect method. The direct method is a method in which X-rays are directly converted into a charge signal by a photoconductive film such as a-Se, and the converted signal charge is stored in a charge storage capacitor. In contrast, the indirect method receives X-rays from the scintillator layer and converts them to visible light. The visible light is converted to signal charges by an a-Si photodiode or CCD, and the signal charges are converted into charge storage capacitors. It is a method to accumulate in.

  As the direct X-ray detector, an active matrix substrate in which a charge storage capacitor, a switching element, and a pixel electrode are provided for each pixel arranged in a matrix on the substrate is used. A structure is known in which an X-ray photoconductive layer is laminated on the surface (see, for example, Patent Document 1).

  And as a main application of the X-ray detector, the human body is often transmitted and the information is used for medical purposes, and the X-ray detector needs to be large enough to cover the human body. For this reason, an X-ray detector having a side of about 40 cm is often used as a normally used size. In this case, in order to realize a direct X-ray detector, an X-ray photoconductive layer must be uniformly formed on the surface of an active matrix substrate having a size larger than that. Further, in order to sufficiently detect incident X-rays, an X-ray photoconductive layer having a thickness of several hundred μm using a material having a large specific gravity made of heavy metal is required. That is, it is necessary to form a kind of semiconductor film having a size of 40 cm on the surface of the active matrix substrate.

  Since the X-ray photoconductive material is a kind of semiconductor, there is a very high possibility that the characteristics will change greatly depending on its crystal structure and composition. Moreover, although the characteristics of a normal semiconductor material are the best in a single crystal, a semiconductor single crystal material that can cover the size of an X-ray detector has not been realized. Therefore, in order to realize a direct X-ray detector, it is necessary to directly form an X-ray photoconductive material on the surface of the active matrix substrate.

An active matrix substrate of a normal X-ray detector is made by diverting a manufacturing process of a liquid crystal display device. Therefore, aluminum or ITO is often used for the pixel electrode that is in direct contact with the X-ray photoconductive layer, and a structure in which an insulating layer of silicon oxide (SiO ₂ ) is also in contact with the X-ray photoconductive layer so as to surround the pixel electrode. It has become. An X-ray photoconductive layer is formed on the surface of the active matrix substrate, but in order to form an X-ray photoconductive layer that is usually several hundreds of μm, the X-ray is efficiently charged by using vacuum deposition. X-ray photoconductive materials such as lead iodide (PbI ₂ ), mercury iodide (HgI ₂ ), bismuth iodide (BiI ₃ ), indium iodide (InI), and thallium bromide (TlBr) having the property of converting to Is formed in a film shape. Furthermore, an electrode layer having a role of supplying electric charge to the X-ray photoconductive layer is formed.
JP 2003-209238 A (page 3-6, FIG. 1-2)

  In the conventional direct X-ray detector, an X-ray photoconductive layer is formed on the surface of an active matrix substrate made by diverting the manufacturing process of a liquid crystal display device. The X-ray photoconductive layer used here is a kind of semiconductor, but unlike ordinary semiconductors such as silicon and gallium arsenide, the X-ray photoconductive layer is composed of an element having a large atomic number in order to efficiently absorb X-rays. is necessary. Examples of semiconductor materials that satisfy such conditions include selenium, lead iodide, mercury iodide, indium iodide, and thallium bromide.

  In general, it is known that characteristics of a semiconductor material change depending on its crystal state. If the crystal structure is incomplete, the sensitivity to X-rays, noise characteristics, and lifetime are often greatly affected. Since the X-ray photoconductive layer made of a semiconductor material is in contact with the surface of the active matrix substrate and its crystallinity is greatly influenced by the surface state, the surface state of the active matrix substrate is determined by the X-ray detector. Will greatly affect the characteristics of

  Since the active matrix substrate has a structure in which a large number of electrodes, wirings, insulating films, and semiconductor thin films are laminated in the inside thereof, the surface of the active matrix substrate is often uneven due to the stacking of the internal multilayer structure. Since the unevenness can be several thousand at maximum, it greatly affects the crystalline state inside the X-ray photoconductive layer formed on the surface of the active matrix substrate by using vacuum deposition, etc. Causes defects. This deteriorates the characteristics of the X-ray photoconductive layer, which in turn adversely affects the performance of the X-ray detector.

  Further, the unevenness of the surface of the active matrix substrate that causes the deterioration of the characteristics is often difficult to obtain a flat surface by eliminating the unevenness. In general, flattening is attempted by filling only the recesses on the surface of the active matrix substrate with other materials.

  A typical method is to apply an insulating resin to the entire surface of the active matrix substrate, and then uniformly polish the surface of the active matrix substrate using a grindstone or a polishing agent, when the surface of the pixel electrode is exposed. There is a method of flattening by finishing the polishing. In this method, it is necessary to completely remove the insulating resin on the surface of the pixel electrode other than the concave region, and polishing only the insulating resin portion while leaving an extremely thin pixel electrode is an extremely accurate polishing technique. It becomes technically difficult because it is necessary.

  As another method, a photosensitive insulating resin is applied to the entire surface of the active matrix substrate, and then the insulating resin is exposed according to the uneven region of the active matrix substrate, and then the convex region is formed by a subsequent development process. It may be possible to planarize by removing only the insulating resin. In this method, expensive manufacturing equipment is required to realize the exposure and development technology, which causes an increase in the price of the X-ray detector, and the insulating resin left in the recesses of the active matrix substrate. Is left on the surface of the active matrix substrate in a convex shape, so that a flattening technique for the insulating resin remaining in the convex shape is required, which is not a fundamental solution.

  The present invention has been made in view of these points, and realizes flattening of the surface of the circuit board by an inexpensive method, improves the characteristics of the X-ray photoconductive layer, improves the performance as a product, and extends the lifetime. An object of the present invention is to provide an X-ray detector manufacturing method and an X-ray detector capable of achieving the above.

  According to the method of manufacturing the X-ray detector of the present invention, a planarization layer having a higher removability by etching than a material of the surface of the circuit board is formed on the surface of the circuit board on which the plurality of pixel electrodes are provided, To remove the planarization layer up to the surface of the pixel electrode, leave the planarization layer in the recess recessed from the surface of the circuit board, planarize the surface of the circuit board, and form an X-ray photoconductive layer on the surface of the circuit board Then, an electrode layer is formed on the surface of the X-ray photoconductive layer.

  In the X-ray detector manufacturing method of the present invention, a protective film is formed on the surface of the circuit board on which the plurality of pixel electrodes are provided, and the removability by etching is higher on the surface of the circuit board than the material of the protective film. A planarizing layer of material is formed, the planarizing layer up to the surface of the protective film is removed by the etching, and the surface of the circuit board is planarized by leaving the planarizing layer in a recess recessed from the surface of the protective film. An X-ray photoconductive layer is formed on the surface of the substrate, and an electrode layer is formed on the surface of the X-ray photoconductive layer.

  In addition, the X-ray detector of the present invention is formed on the surface of the circuit board with a circuit board having a plurality of pixel electrodes on the surface and a material whose removability by etching is higher than that of the surface of the circuit board. Later, the surface of the pixel electrode was removed by etching and provided in a recess in the surface of the circuit board, and a flattening layer for flattening the surface of the circuit board and provided on the surface of the circuit board on which the flattening layer was formed An X-ray photoconductive layer and an electrode layer provided on the surface of the X-ray photoconductive layer are provided.

  The X-ray detector according to the present invention includes a circuit board having a plurality of pixel electrodes on the surface, a protective film provided on the surface of the circuit board, and a material whose removability by etching is higher than that of the protective film. And a planarizing layer that is formed on the surface of the circuit board and then is removed by etching to the surface of the protective film and is provided in a recess that is recessed from the surface of the protective film, and planarizes the surface of the circuit board. An X-ray photoconductive layer provided on the surface of the circuit board on which the layer is formed, and an electrode layer provided on the surface of the X-ray photoconductive layer are provided.

  According to the present invention, a planarizing layer made of a material whose removability by etching is higher than that of the surface of the circuit board is formed on the surface of the circuit board on which the plurality of pixel electrodes are provided. In order to flatten the surface of the circuit board by removing the flattening layer and leaving the flattening layer in the recesses recessed from the surface of the circuit board, the surface of the circuit board is planarized by an inexpensive method, and X-ray The characteristics of the photoconductive layer can be improved, and the performance and life of the X-ray detector can be improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 to 7 show a first embodiment.

  1 and 6, reference numeral 1 denotes an X-ray detector. The X-ray detector 1 is a direct X-ray planar image detector, and is a circuit board having a plurality of pixels 2 arranged in a matrix. An active matrix substrate 3 which is a photoelectric conversion substrate is provided.

  On the surface of the active matrix substrate 3, an X-ray photoconductive layer 4 for converting X-rays, which are incident radiation, into electric signals is laminated and formed. The X-ray photoconductive layer 4 is in contact with the surface of the active matrix substrate 3 and is directly formed on the surface of the active matrix substrate 3. Further, a bias electrode layer 5 as an electrode layer which is an upper electrode is laminated on the surface of the X-ray photoconductive layer 4.

  The active matrix substrate 3 includes a glass substrate 6 as an insulating substrate having a rectangular flat plate shape and translucency. On the surface of the glass substrate 6, a thin film transistor (TFT) 7 as a switching element, a charge storage capacitor 8, and a pixel electrode 9 are formed for each pixel 2. As shown in FIG. 7, the thin film transistor 7, the charge storage capacitor 8, and the pixel electrode 9 have a grid-like arrangement in which the thin film transistor 7, the charge storage capacitor 8, and the pixel electrode 9 form one set. It is configured to correspond.

  On the surface of the glass substrate 6, control electrodes 11 are wired as a plurality of control lines along the row direction of the glass substrate 6. Each control electrode 11 is located between each pixel 2 on the surface of the glass substrate 6 and is provided so as to be separated in the column direction of the glass substrate 6. Each control electrode 11 is electrically connected to the gate electrode 12 of each thin film transistor 7 located in the same row. A plurality of readout electrodes 13 are wired on the surface of the glass substrate 6 along the column direction of the glass substrate 6. Each readout electrode 13 is located between each pixel 2 on the surface of the glass substrate 6, and is provided spaced apart in the row direction of the glass substrate 6. A source electrode 14 of each thin film transistor 7 located in the same column is electrically connected to each readout electrode 13. The drain electrode 15 of each thin film transistor 7 is electrically connected to the charge storage capacitor 8 and the pixel electrode 9, respectively.

An insulating layer 17 such as silicon oxide (SiO ₂ ) is stacked on the surfaces of the thin film transistor 7, the charge storage capacitor 8, the control electrode 11, and the gate electrode 12. A through hole 18 serving as a contact hole communicating with the drain electrode 15 of the thin film transistor 7 is formed in a part of the insulating layer 17. On the insulating layer 17 including the through hole 18, the pixel electrode 9 is laminated. The pixel electrode 9 is electrically connected to the drain electrode 15 of the thin film transistor 7 through the through hole 18.

  The surface of the active matrix substrate 3 has a plurality of recesses 20 that are recessed from the surface of the active matrix substrate 3 due to steps due to the stacking of each component or through holes 18, and the surface of the active matrix substrate 3 becomes uneven. ing. Each recess 20 is formed by being laminated in a state in which a planarizing layer 21 is filled, and the surface of the active matrix substrate 3 is planarized. The planarization layer 21 is removable by etching and has higher solubility by a solvent or decomposition by plasma etching than the pixel electrode 9 and the insulating layer 17 located on the surface of the active matrix substrate 3, that is, is easily dissolved or decomposed. For example, it is made of a resin material. Since the flattening layer 21 is also formed in the concave portion 20 in the pixel electrode 9, it is preferable to use a conductive material. As the solvent, for example, an organic solvent such as toluene or acetone, an alkaline solution, an acidic solution, or the like is used. For the plasma etching, for example, plasma containing oxygen ions, hydrogen ions, fluorine ions, chlorine ions, nitrogen ions and the like as main components is used.

  The X-ray photoconductive layer 4 is formed on the surface of the planarized active matrix substrate 3 using a technique such as vacuum deposition.

  The bias electrode layer 5 is formed flush with the entire surface of the X-ray photoconductive layer 4.

  Next, the operation of the present embodiment will be described.

  First, X-rays incident on the X-ray photoconductive layer 4 of the X-ray detector 1 are excited by the X-ray photoconductive layer 4 to become photoconductive charges.

  This photoconductive charge moves to each pixel electrode 9 by an electric field applied by the bias electrode layer 5.

  Thereafter, the photoconductive charges that have flowed into and flowed into the pixel electrodes 9 are connected to the pixel electrodes 9 until the gate electrodes 12 of the thin film transistors 7 connected to the pixel electrodes 9 are driven. The charge is transferred to and stored in the charge storage capacitor 8.

  At this time, when one of the control electrodes 11 is in a driving state, the thin film transistors 7 in one row connected to the control electrode 11 in the driving state are in a driving state.

  Then, the photoconductive charge accumulated in the charge accumulating capacitor 8 connected to each thin film transistor 7 in this driving state is output to the readout electrode 13.

  By sequentially switching the control electrode 11 to be driven, the entire image information is output as an image signal.

  Thus, since signals corresponding to the pixels 2 in a specific row of the X-ray image are output, signals corresponding to all the pixels 2 can be output by sequentially switching the control electrodes 11 to be driven. This output signal is output as a digital image signal.

  Next, a method for manufacturing the X-ray detector 1 will be described.

  As shown in FIG. 2, the surface of the active matrix substrate 3 on which the thin film transistor 7, the charge storage capacitor 8, and the pixel electrode 9 are formed for each pixel 2 on the glass substrate 6, Due to the influence of the through hole 18 and the like, it is formed in an uneven shape having a plurality of recesses 20.

  As shown in FIG. 3, a resin solution in which a resin component is dissolved in a solvent is applied to the surface of the active matrix substrate 3 by, for example, a spin coating method. The applied resin solution has a flat surface due to the surface tension and gravity of the resin solution itself.

  After the application of the resin solution, the entire active matrix substrate 3 is heated, and the solvent component in the applied resin solution is evaporated to solidify the resin, thereby forming the planarization layer 21 over the entire surface of the active matrix substrate 3. . The planarity of the surface shape of the planarized layer 21 formed in this way is significantly improved as compared with the surface shape of the active matrix substrate 3.

  As shown in FIG. 4, after the planarization layer 21 is formed on the surface of the active matrix substrate 3, the planarization layer 21 is etched.

  As an etching method, there is etching using a solvent. As the solvent, the flattening layer 21 is easily dissolved and the pixel electrode 9 and the insulating layer 17 are difficult or difficult to dissolve. For example, an organic solvent, an alkaline solution, an acidic solution, or the like is used. It is done. Then, by etching with a solvent, as shown in FIG. 5, the planarization layer 21 is dissolved until the surface of the pixel electrode 9 is exposed, leaving the planarization layer 21 only in the recess 20, and preferably planarizing with the pixel electrode 9. The surface of the active matrix substrate 3 is planarized so that it is flush with the layer 21. Dissolving the planarizing layer 21 until the surface of the pixel electrode 9 is exposed and leaving the planarizing layer 21 only in the recesses 20 can be easily controlled by the etching time with a solvent, and the technique used is also inexpensive. Is sufficient. In addition, since the pixel electrode 9 and the insulating layer 17 are difficult or difficult to dissolve in the solvent used, problems such as disappearance due to dissolution of the pixel electrode 9 and deterioration of insulating performance due to dissolution of the insulating layer 17 do not occur.

  Etching using plasma technology is also effective as another etching method. The plasma satisfies the condition that the planarization layer 21 is easily decomposed and the pixel electrode 9 and the insulating layer 17 are difficult or difficult to decompose. For example, the resin of the planarization layer 21 is mainly composed of an organic material. As the component, plasma mainly composed of oxygen ions, hydrogen ions, fluorine ions, chlorine ions, nitrogen ions, and the like is used. Then, by etching by plasma irradiation, as shown in FIG. 5, the planarizing layer 21 is decomposed and removed as a gas component until the surface of the pixel electrode 9 is exposed, leaving the planarizing layer 21 only in the recesses 20. Preferably, the surface of the active matrix substrate 3 is planarized so that the pixel electrode 9 and the planarization layer 21 are flush with each other. The flattening layer 21 is decomposed until the surface of the pixel electrode 9 is exposed, and leaving the flattening layer 21 only in the recesses 20 can be easily controlled by the etching time using plasma. It is possible to control etching with higher accuracy than using, and the technology used can be sufficiently handled by an inexpensive method. Further, since the pixel electrode 9 and the insulating layer 17 are difficult or difficult to decompose with the plasma used, problems such as disappearance due to dissolution of the pixel electrode 9 and deterioration of insulating performance due to dissolution of the insulating layer 17 do not occur.

  After the surface of the active matrix substrate 3 is planarized, an X-ray photoconductive layer 4 is formed on the surface of the active matrix substrate 3 as shown in FIG. At this time, the surface shape of the active matrix substrate 3 is significantly less uneven than the surface shape before flattening. Therefore, the disorder of the crystal | crystallization inside the X-ray photoconductive layer 4 decreases, and the characteristic of the X-ray photoconductive layer 4 which is a semiconductor substance can be improved.

  In this way, the planarizing layer 21 is formed on the surface of the active matrix substrate 3 on which the pixel electrodes 9 are provided, which is higher in solubility in a solvent or more easily decomposed by plasma etching than the surface material of the active matrix substrate 3; The flattening layer 21 up to the surface of the pixel electrode 9 is dissolved or decomposed by the solvent or plasma etching, and the surface of the active matrix substrate 3 is flattened leaving the flattening layer 21 in the recess 20 recessed from the surface of the active matrix substrate 3. Therefore, the surface of the active matrix substrate 3 can be flattened by an inexpensive method. Therefore, the characteristics of the X-ray photoconductive layer 4 can be improved, and the performance and life of the X-ray detector 1 can be improved.

  Next, FIG. 8 shows a second embodiment.

A protective film 23 is formed on the surface of the pixel electrode 9 of the active matrix substrate 3 before the planarization layer 21 is formed. The protective film 23 is made of, for example, a metal material such as aluminum, molybdenum, titanium, or chromium, or an inorganic material such as ITO, IZO, or SnO _{2. The} flattening layer 21 is soluble in a solvent or decomposed by plasma etching. Or a material that is insoluble in a solvent or not decomposed by plasma etching is used. Examples of the solvent include organic solvents, alkaline solutions, acidic solutions, and the like. As the plasma, for example, plasma mainly composed of oxygen ions, hydrogen ions, fluorine ions, chlorine ions, nitrogen ions, and the like is targeted.

  In other words, the planarization layer 21 is formed of a resin material that is more soluble in a solvent or decomposed by plasma etching than the protective film 23, the insulating layer 17, and the like, that is, easily dissolved or decomposed.

  Then, when the X-ray detector 1 is manufactured, after the planarization layer 21 is formed on the entire surface of the active matrix substrate 3 in which the protective film 23 is formed on the surface of the pixel electrode 9, the planarization layer 21 is used as a solvent or plasma. Etch using In the etching, the planarization layer 21 is dissolved until the surface of the protective film 23 of the pixel electrode 9 is exposed, and the surface of the active matrix substrate 3 is planarized so that the planarization layer 21 is left only in the recess 20. At this time, since the protective film 23 of the pixel electrode 9 is hardly dissolved or decomposed by the solvent or plasma used or is difficult to dissolve or decompose, it is possible to prevent deterioration of the insulation performance due to the disappearance of the pixel electrode 9.

  In this way, the protective film 23 is formed on the surface of the plurality of pixel electrodes 9 provided on the surface of the active matrix substrate 3, and the surface of the active matrix substrate 3 is soluble in solvent or decomposed by plasma etching. A planarizing layer 21 made of a material higher than the material 23 is formed, and the planarizing layer 21 up to the surface of the protective film 23 is dissolved or decomposed by the solvent or plasma etching to form a recess 20 recessed from the surface of the active matrix substrate 3. Since the surface of the active matrix substrate 3 is planarized while leaving the planarization layer 21, the surface of the active matrix substrate 3 can be planarized by an inexpensive method. Therefore, the characteristics of the X-ray photoconductive layer 4 can be improved, and the performance and life of the X-ray detector 1 can be improved.

1 is a simplified cross-sectional view of an X-ray detector showing a first embodiment of the present invention. It is sectional drawing which shows the manufacturing process of an X-ray detector same as the above. It is sectional drawing which shows the manufacturing process of the X-ray detector following FIG. 2 same as the above. It is sectional drawing which shows the manufacturing process of the X-ray detector following FIG. 3 same as the above. It is sectional drawing which shows the manufacturing process of the X-ray detector following FIG. 4 same as the above. It is a perspective view of the decomposition | disassembly state of a X-ray detector same as the above. It is a front view showing an X-ray detector typically. It is the simplified sectional view of the X-ray detector which shows a 2nd embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 X-ray detector 3 Active matrix board | substrate as a circuit board 4 X-ray photoconductive layer 5 Bias electrode layer as an electrode layer 9 Pixel electrode
20 Recess
21 Planarization layer
23 Protective film

Claims (6)

On the surface of the circuit board on which the plurality of pixel electrodes are provided, a planarizing layer made of a material whose removability by etching is higher than the material of the surface of the circuit board is formed.
The planarization layer up to the surface of the pixel electrode is removed by the etching, and the surface of the circuit board is planarized by leaving the planarization layer in a recess recessed from the surface of the circuit board.
An X-ray photoconductive layer is formed on the surface of the circuit board,
An electrode layer is formed on the surface of the X-ray photoconductive layer. A method for manufacturing an X-ray detector. Forming a protective film on the surface of the circuit board on which the plurality of pixel electrodes are provided;
A flattening layer made of a material whose removability by etching is higher than that of the protective film is formed on the surface of the circuit board.
The flattening layer up to the surface of the protective film is removed by the etching, and the surface of the circuit board is flattened by leaving the flattening layer in the recess recessed from the surface of the protective film.
An X-ray photoconductive layer is formed on the surface of the circuit board,
An electrode layer is formed on the surface of the X-ray photoconductive layer. A method for manufacturing an X-ray detector. The method for manufacturing an X-ray detector according to claim 1, wherein either one of dissolution by a solvent and decomposition by plasma etching is used for the etching. A circuit board having a plurality of pixel electrodes on the surface;
Etching removability is higher than that of the surface of the circuit board, and after being formed on the surface of the circuit board, the surface of the pixel electrode is removed by etching and provided in the recesses on the surface of the circuit board. A planarization layer for planarizing the surface;
An X-ray photoconductive layer provided on the surface of the circuit board on which the planarizing layer is formed;
An X-ray detector comprising: an electrode layer provided on a surface of the X-ray photoconductive layer. A circuit board having a plurality of pixel electrodes on the surface;
A protective film provided on the surface of the circuit board;
The material having higher removability by etching than the material of the protective film is formed on the surface of the circuit board, and then removed to the surface of the protective film by etching and provided in a recess recessed from the surface of the protective film. A planarization layer for planarizing the surface;
An X-ray photoconductive layer provided on the surface of the circuit board on which the planarizing layer is formed;
An X-ray detector comprising: an electrode layer provided on a surface of the X-ray photoconductive layer. The X-ray detector according to claim 4 or 5, wherein any one of dissolution by a solvent and decomposition by plasma etching is used for the etching.

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