JP2006041517A - Photoelectric conversion device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device that can prevent the effect of radiation noise on a large-screen sensor by using a low-cost and simple mounting structure. <P>SOLUTION: A photoelectric conversion device comprises multiple substrates 205-208, each of which has multiple photoelectric conversion elements and which are adjacent to each other. A conductive member 214 is placed over the photoelectric conversion elements on the multiple substrates 205-208 which are adjacent to each other. The conductive member 214 functions as a shield member by being connected to a ground. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a photoelectric conversion device, and more specifically, a two-dimensional photoelectric conversion suitably used for reading (especially, reading at an equal magnification) of an X-ray imaging device such as a facsimile, a digital copying machine, or a nondestructive inspection. The present invention relates to a photoelectric conversion device having a region.

  2. Description of the Related Art Conventionally, as an image reading apparatus such as a facsimile, a copying machine, a scanner, or an X-ray imaging apparatus (so-called X-ray apparatus or the like), a reading system apparatus using a reduction optical system and a CCD sensor is known. In recent years, with the development of photoelectric conversion semiconductor materials typified by hydrogenated amorphous silicon (hereinafter abbreviated as a-Si), photoelectric conversion elements and signal processing units are formed on large-area substrates, and the same size as the information source. Development of so-called contact type sensors that read information sources with or without using optical systems is remarkable.

  When reading an X-ray image, X-rays are input to a wavelength converter such as a phosphor, and the wavelength converter converts the wavelength into a wavelength in the photosensitive wavelength range of the sensor, and the sensor reads it. However, since the image reading using the reduction optical system has an optical loss, it is attempted to improve the efficiency by reading the image closely with the wavelength converter with the same magnification sensor.

  In particular, since a-Si can be used not only as a photoelectric conversion material but also as a thin film field effect transistor (hereinafter abbreviated as TFT), the photoelectric conversion semiconductor layer and the TFT semiconductor layer can be formed simultaneously. Since it has an advantage that can be achieved, matching with a switch element and a capacitor element such as a thin film field effect transistor formed at the same time is good.

  These elements can be formed by stacking thin films, but the order of stacking the thin films of these elements can be the same. With such a configuration, the thin films constituting each element can be formed simultaneously as a common film. In this manner, by forming each element at the same time, the number of processes is reduced and wiring routing is also reduced, so that the photoelectric conversion device can be increased in S / N and cost.

  In addition, since the capacitor (capacitor) can be provided with an insulating layer in an intermediate layer which is a conductive layer serving as an electrode, it can be finished with good characteristics. By improving the characteristics of the capacitive element, it is possible to provide a high-performance photoelectric conversion device that can output the integrated value of optical information obtained by a plurality of photoelectric conversion elements with a simple configuration. High-performance, high-performance facsimile and X-ray X-ray equipment can be configured.

  However, such a large-screen sensor with high characteristics has a large area, so that noise voltage and noise current are incident on the photoelectric conversion semiconductor layer and the TFT semiconductor layer due to an increase in radiation noise, resulting in malfunctions and signals. As a result, the reliability of the photoelectric conversion device may be significantly reduced.

  As one of countermeasures against the radiation noise as described above, a method described below has been proposed.

  FIG. 22 is a schematic cross-sectional view showing a conventional configuration of a photoelectric conversion device used for X-ray detection. In this photoelectric conversion apparatus, a metal film 404 is formed by vacuum deposition or the like in order to form a so-called antenna ground on the photoelectric conversion device 401 having a photoelectric conversion element and a TFT in order to prevent radiation noise from entering. Yes. Reference numeral 402 denotes an X-ray sensitive phosphor that is attached to the metal film 404 with an adhesive layer 403.

  However, in the above conventional example, it is inevitable that a metal film formed by film formation by vacuum deposition or the like is disadvantageous in terms of cost. There is also room for improvement in terms of yield.

  Fine dust during manufacturing of the photoelectric conversion semiconductor layer, especially dust that peels off the wall of the thin film deposition device when depositing the amorphous silicon layer, which is particularly problematic, and remains on the substrate when depositing the metal layer on the substrate It is difficult to completely eliminate dust.

  Originally, in addition to the situation where it is impossible to eliminate wiring defects, i.e., short-circuiting or opening of the wiring, the metal film is vacuumed to construct an antenna ground for preventing incident radiation. Forming a film by vapor deposition or the like, patterning and wiring there is a problem that the yield of the substrate when manufacturing a photoelectric conversion device having a large screen is further deteriorated and the cost is increased.

  In addition, when the metal film is provided on the photoelectric conversion portion, if it is the light incident side, it is necessary to consider a decrease in the amount of incident light due to the metal film. In order to minimize the decrease in efficiency due to this metal film, it may be possible to form a transparent conductive film such as a metal oxide. It does not lead to a solution of the problem.

  As described above, countermeasures against radiation noise become important as the light receiving area increases and as information with an excellent S / N ratio is obtained. In addition, it is desired that costs and yields are not reduced with measures against radiation noise.

  Furthermore, wavelength converters such as phosphors often do not have resistance to external factors such as humidity. For this reason, in the photoelectric conversion device for X-ray detection, protection of the wavelength converter is required in order to improve durability, handleability, and maintainability.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a photoelectric conversion device that can eliminate the influence of radiation noise on a large-screen sensor with a low-cost and simple mounting structure. .

  Another object of the present invention is to provide not only a photoelectric conversion device having a large S / N ratio but also a photoelectric conversion device excellent in environmental resistance.

  Furthermore, another object of the present invention is to provide a photoelectric conversion device that prevents a wavelength converter such as a phosphor from being deteriorated due to humidity, moisture, etc., and enables stable reading.

  According to a first aspect of the present invention, there is provided a configuration in which a plurality of substrates having a plurality of photoelectric conversion elements are arranged adjacent to each other, and the photoelectric conversion elements are arranged over the plurality of adjacently arranged substrates. There is a photoelectric conversion device having a conductive member disposed on the surface.

  According to this structure, the conductive member functions as a shield member by connecting the conductive member bonded on the photoelectric conversion element to the ground of the main body. As a result, it is possible to prevent radiation noise from entering the sensor surface regardless of film formation, and even if the screen is large, the S / N ratio is not lowered and the yield can be improved.

  A specific configuration for realizing the object of the invention according to the present application is characterized in that, as described in claim 2, a wavelength converter is provided between the photoelectric conversion element and the conductive member. 1 in the photoelectric conversion device.

  According to this configuration, the wavelength conversion body provided between the photoelectric conversion element and the conductive member prevents moisture from entering by the conductive member, for example, when converting the wavelength of X-rays into the photosensitive sensitivity region of the photoelectric conversion element. Thus, the external resistance of the wavelength converter can be improved.

  A specific configuration for realizing the object of the invention according to the present application is the photoelectric conversion device according to claim 2, wherein the wavelength converter includes a phosphor as described in claim 3. .

  According to this configuration, since the phosphor is sensitive to X-rays, it is suitable for an X-ray sensor.

  A specific configuration for realizing the object of the present invention is characterized in that, as described in claim 4, the conductive member has an insulating base and a conductive layer provided thereon. 1 in the photoelectric conversion device.

  According to this configuration, the protective material provided in the conductive layer functions to protect the surface of the conductive layer mechanically or from other substances such as moisture.

  A specific configuration for realizing the object of the invention according to the present application is the photoelectric conversion device according to claim 1, wherein the conductive member includes a metal as described in claim 5.

  According to this configuration, when the conductive member is connected to the grounding ground or the electric ground, the conductive member can be easily connected to the grounding ground or the electric ground by wiring or the like.

  A specific configuration for realizing the object of the invention according to the present application is the photoelectric conversion device according to claim 5, wherein the metal includes aluminum.

  According to this structure, the insulation with respect to a photoelectric conversion element can be improved by oxidizing the surface of aluminum and forming an oxide.

  A specific configuration for realizing the object of the invention according to the present application is the photoelectric conversion device according to claim 1, wherein the conductive member is grounded as described in claim 7. .

  According to this configuration, the grounding position of the conductive member differs depending on the circuit configuration of the apparatus main body, and the best result is obtained. In the configuration including the driving analog circuit, the conductive member is connected to the driving analog circuit. Is desirable.

  Moreover, the structure which implement | achieves the objective of the invention which concerns on this application is characterized by the formation area of the said photoelectric conversion element being smaller than the area | region where this electroconductive member is arranged, as described in Claim 8. 1. The photoelectric conversion device according to claim 1, wherein the periphery of the conductive member is sealed as described in claim 9. The conductive member according to claim 10, wherein the periphery of the conductive member extends around the substrate having the photoelectric conversion element, and an end thereof is sealed so as to surround the substrate. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device according to claim 11 has a space between the periphery of the substrate and the conductive member. An end face of the substrate, as in claim 12, The photoelectric conversion device according to claim 10, wherein the conductive member is in close contact, and the resin is disposed in the space as described in claim 13. The photoelectric conversion device according to claim 11, wherein, as described in claim 14, a resin covering the substrate and the entire end surface of the conductive member is disposed. The photoelectric conversion device according to claim 5, wherein the metal has a thickness of 100 microns or less.

  According to these configurations, even when the light receiving area is increased, information with an excellent S / N ratio can be obtained, and with respect to radiation noise measures, external factors such as humidity can be reduced without reducing the cost yield. Thus, a photoelectric conversion device that can eliminate the influence of radiation noise on a large-screen sensor can be obtained with a simple and low-cost mounting structure.

  According to the present invention, in a photoelectric conversion device having a photoelectric conversion element, a thin metal plate is bonded to the surface of the photoelectric conversion element, and the metal plate is connected to a ground terminal to remove radiation noise. Therefore, it is possible to improve the yield and to prevent radiation noise without fail, regardless of the influence of radiation noise, regardless of expensive film formation.

  Furthermore, according to the present invention, it is possible to provide a photoelectric conversion device and an X-ray image reading device which are excellent in radiation noise resistance and low in cost.

  Furthermore, according to the present invention, the sheet metal plate has a larger area than the surface of the photoelectric conversion element, and is fixed to the upper ground side terminal with a ground connection portion on the bottom and laminated on both sides with a screw, eyelet metal or the like. In this way, by connecting to the ground of the device main body, digital circuit, or analog circuit, it is possible to easily attach a thin metal plate to the surface of the photoelectric conversion element, and ground it at an appropriate position. Can be connected.

  In addition, according to the present invention, it is possible to provide a photoelectric conversion device having high moisture resistance, excellent impurity ion resistance, and high durability.

  According to invention of Claim 1 which concerns on this application, an electroconductive member functions as a shield member by connecting the electroconductive member bonded on the photoelectric conversion element to the earth ground of a main body. As a result, it is possible to prevent radiation noise from entering the sensor surface regardless of film formation, and even if the screen is large, the S / N ratio is not lowered and the yield can be improved.

  According to invention of Claim 2 which concerns on this application, the wavelength converter provided between the photoelectric conversion element and the electroconductive member is, for example, conductive when converting the wavelength of X-rays into the photosensitive sensitivity region of the photoelectric conversion element. Invasion of moisture is prevented by the sexual member, and the external resistance of the wavelength converter can be improved.

  According to the third aspect of the present invention, since the phosphor is sensitive to X-rays, it is suitable for an X-ray sensor.

  According to invention of Claim 4 which concerns on this application, the protective material provided in the conductive layer functions so that the surface of a conductive layer may be protected mechanically or from other substances, such as a water | moisture content.

  According to the invention described in claim 5 of the present application, when the conductive member is connected to a grounding earth or an electric ground, the conductive member by wiring or the like can be easily connected to the grounding ground or the electric ground. Become.

  According to invention of Claim 6 which concerns on this application, the insulation with respect to a photoelectric conversion element can be improved by oxidizing the surface of aluminum and forming an oxide.

  According to the invention described in claim 7 of the present application, the grounding position of the conductive member is different in a place where the best result can be obtained depending on the circuit configuration of the apparatus main body, and in the configuration including the driving analog circuit, It is desirable to connect to the driving analog circuit.

  Further, according to each of the inventions according to claims 8 to 15 of the present application, even when the light receiving area is increased, information with an excellent S / N ratio can be obtained, and the cost yield is reduced due to the countermeasure against radiation noise. Accordingly, a photoelectric conversion device that is resistant to external factors such as humidity and that can eliminate the influence of radiation noise on a large-screen sensor can be obtained with a low-cost and simple mounting structure.

  Hereinafter, the best mode for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view showing an example of an embodiment of a photoelectric conversion device according to the present invention. In the following, it relates to a contact sensor of the same magnification reading type having a photoelectric conversion layer having a material capable of photoelectric conversion such as a-Si, in particular, a two-dimensional sensor in general, The case where it is used as an image information reading means of an X-ray X-ray apparatus (X-ray imaging apparatus) will be described.

  In the photoelectric conversion device shown in FIG. 1, a phosphor 2 for wavelength-converting X-rays into a photosensitive sensitivity region of a photoelectric conversion element in the surface of the photoelectric conversion element is formed on an adhesive base 4 on a sensor substrate 1 having a photoelectric conversion element. It is an example of a photoelectric conversion device in which a thin metal plate 3 for preventing external radiation noise is bonded with an adhesive 4 after being bonded together.

  In this photoelectric conversion device, for example, a photoelectric conversion semiconductor material such as a-Si is used to form a photoelectric conversion element and a thin film field effect transistor (TFT) for a switch on the same substrate, so-called information source. A two-dimensional contact-type sensor that is read by an optical system with the same magnification as the above is configured by a substrate on which a photoelectric conversion semiconductor layer and a TFT semiconductor layer are simultaneously formed.

  In addition, in order to prevent noise voltage or noise current from being incident on the photoelectric conversion element and the semiconductor layer of the TFT due to radiation noise, and thus reducing the reliability of the photoelectric conversion device due to malfunction or error signal, the photoelectric of the sensor base 1 is prevented. On the conversion element surface, for example, a thin metal plate 3 laminated on a base plate (not shown) made of resin or the like is bonded so as not to cause wrinkles or streaks, and the thin metal plate 3 is grounded or grounded. Connected to.

  FIG. 2 is a schematic plan view of the photoelectric conversion device of FIG. The noise-preventing thin metal plate 3 is bonded onto the photoelectric conversion element surface of the sensor substrate 1 using an adhesive 4. In the case of an X-ray X-ray apparatus, the thin metal plate 3 needs to be made as thin as possible using a metal that easily transmits X-rays in order to reduce X-ray loss.

  By the way, the thinner the thin metal plate 3 is, the more difficult it is to bond together so as not to cause wrinkles and streaks. Therefore, for example, it is preferable to increase the strength of the thin metal plate 3 by laminating the thin metal plate 3 on a base plate such as a resin. By laminating in this state, it becomes easy to bond so that wrinkles and streaks do not occur. Thereafter, the thin metal plate 3 is wired to the ground or electric ground.

  In order to facilitate the bonding, a resin film is preferably laminated on at least one surface of the thin metal plate 3. The thin metal plate 3 may have a protective film for protecting the resin film as a base and the metal surface mechanically or from other substances such as moisture. In this case, it is preferable that both surfaces of the thin metal plate 3 are covered with resin. Moreover, even if the base and the protective film are made of the same material or different materials, they are not particularly limited as long as they have desired characteristics.

  The thin metal plate 3 serving as the conductive layer may be a so-called foil shape, but may be formed on the base by vapor deposition. Vapor deposition in this case has higher flatness than the case where it is formed on the surface of the photoelectric conversion element (because there is no unevenness due to the element), and can be formed under the optimum conditions for the base, so it is easy. Can be done.

  Furthermore, the base resin or the protective resin can be formed by a method other than laminating, for example, coating.

  In consideration of electrical insulation with the photoelectric conversion element, the metal surface may be oxidized to form an oxide. For example, aluminum is suitable as a metal that has a high X-ray transmittance and can be easily formed into a thin film, and the surface strength can be easily increased by oxidizing the aluminum.

  The thin metal plate 3 is preferably 100 μm or less in thickness in the case of aluminum in consideration of the above points, although it depends on the situation and material used. Thus, a member including the thin metal plate 3 provided on the photoelectric conversion element surface of the sensor base 1 is referred to as a conductive member.

  The total area of the noise prevention plate including the thin metal plate 3 is preferably larger than the area of the photoelectric conversion element surface. Then, as shown in FIG. 2, a part of the ground connection portion 5 of the thin metal plate 3 that is wired for grounding or electrical ground is provided in a part of the photoelectric conversion element, as shown in FIG. The thin metal plate 3 is wired to the grounding ground connection 5 by the eyelet.

  In FIG. 2, the terminal part of the thin metal plate 3 of the ground connection part 5 and the part including the double-sided laminate are shown as part A. 1 and 2 show an X-ray image photoelectric conversion device, but the phosphor 2 is not necessary if a contact image sensor for a normal scanner is configured.

  FIG. 3 is a schematic partially enlarged cross-sectional view showing a detailed configuration of a portion A in FIG. As shown in FIG. 3, in the actual ground wiring, both surfaces of a thin metal plate 6 (same as the thin metal plate 3 in FIG. 1) are laminated with a base resin film 7 and a protective resin film 8, and the base resin The film 7 is thicker than the protective resin film 8, or a film having an equivalent thickness is used.

  And the hole 10 for earthingly connecting the thin metal plate 6 laminated with the double-sided resin film is provided. A screw, a screw, or the like is inserted into the hole 10 to be turned around to a ground terminal or the like, but the protective resin film 8 at the portion of the contact portion 11 with the connection side of the ground terminal or the like is peeled off.

  FIG. 4 is a schematic partial enlarged cross-sectional view showing another detailed configuration of part A of FIG. In FIG. 4, a metal member (for example, eyelet) having a metal annular member and a protruding portion on one surface side is attached to the ground connection portion and connected to the ground terminal.

  In FIG. 4, both surfaces of the thin metal plate 6 are laminated with the base resin film 7 and the protective resin film 8, and a resin film having a thickness greater than or equal to that of the protective resin film 8 is used. This is the same as the configuration of FIG. A hole 10 is provided by an eyelet punch or the like, and the resin films 7 and 8 are locally broken by a protruding portion (for example, eyelet metal) 9 of the annular metal member 9 to connect the thin metal plate 6 and the annular metal member 9. Thus, the annular metal member 9 itself is used as a connection terminal on the double-sided resin film.

  FIG. 5 is a configuration example in which the ground connection portion of the configuration of FIG. 3 is screwed, and FIG. 6 is a configuration example using the annular metal member 9.

  As shown in FIG. 5, a mounting member 12 such as a screw or a screw is inserted into the hole 10, and a nut or a screw is cut so that the contact portion 11 is electrically connected to an electric circuit board 13 having a ground terminal. It is attached by a coupling member 12a.

  In the case of FIG. 5, in order to ensure electrical connection between the thin metal plate 6 and the ground terminal, the contact terminal 14 made of a metal washer, solder or the like is used. However, the contact terminal 14 is not necessarily required if the electrical connection is sufficiently performed. In the electrical connection, the attachment member (screw) 12 and the coupling member (nut) 12a are screwed together, but this attachment method is not limited to the illustrated configuration.

  Further, as shown in FIG. 6, conduction is achieved by attaching a connecting terminal 12 b such as a washer connected to the conducting wire portion of the grounding cable 15 by using the annular metal member 9 by the attachment member 12 and the coupling member 12 a. May be.

  Of course, the method shown in FIG. 5 and FIG. 6 can be modified as appropriate. Even if the grounding cable 15 of FIG. 6 is used in the configuration of FIG. 5, the electric circuit board 13 of FIG. The contact terminal 14 may be used for electrical connection. Of course, the electric circuit board 13 may be a base on which a photoelectric conversion element is formed. A preferred example of the location to be specifically connected will be described below.

  FIG. 7 is a schematic block diagram showing an example of a suitable connection configuration when a grounding earth point is connected to the apparatus main body. FIG. 7 shows a substrate-type photoelectric conversion device in which a phosphor 2 that is exposed to X-rays with an adhesive is bonded to a photoelectric conversion element, and a thin metal plate 3 for preventing radiation noise is bonded thereon. Yes.

  The photoelectric conversion device includes a device main body (or housing) 16, a power supply circuit 17 that supplies power to each unit, an interface 18 for signal input / output with an external device, an analog circuit 19, and a digital circuit 20. ing. The thin metal plate 3 of the photoelectric conversion device is wired as a ground ground to the device main body 16 via the wiring 21, thereby preventing radiation noise from entering.

  The analog circuit 19 outputs an X-ray image signal based on an analog electric signal obtained by reading an X-ray image from the photoelectric conversion device. The digital circuit 20 performs A / D conversion on the X-ray image signal from the analog circuit 19 to perform digital image processing, and then returns it to the analog circuit 19 again.

  FIG. 8 is a schematic block diagram showing an example of a preferred connection configuration when a ground ground is connected to the digital circuit 20. In the example shown in FIG. 8, the thin metal plate 3 of the photoelectric conversion device is wired to the ground wiring 22 of the digital circuit 20 as a ground ground. In particular, it is convenient when the arrangement of the photoelectric conversion device and the digital circuit 20 is close, or when both devices are electrically at the same ground potential.

  FIG. 9 is a schematic block diagram showing an example of a preferred connection configuration when a ground ground is connected to the analog circuit 19. As shown in FIG. 9, the thin metal plate 3 of the photoelectric conversion device is wired to the ground wiring 23 of the analog circuit 19 as a ground ground. This case is also suitable when the arrangement positions of the photoelectric conversion device and the analog circuit 19 are close, or when the ground potential in operation of both devices is the same.

  Thus, after the completion of the sensor substrate 1 having the photoelectric conversion element, the mounting structure is such that the thin metal plate 3 for preventing radiation noise is bonded to the upper part of the surface of the photoelectric conversion element. In order to reduce the loss of X-rays, it is desirable that the thin metal plate 3 be laminated and pasted on both sides so as not to become a wrinkle and a thin plate.

  The entire area of the thin metal plate 3 is larger than the surface of the photoelectric conversion element, and by providing a ground connection portion beyond the area where the photoelectric conversion element is disposed, the eyelet or It can be connected to the earth terminal side by screwing or the like and dropped to earth ground or electric ground. It is possible to effectively remove radiation noise with a simple and low-cost mounting structure, and the product yield is considerably improved.

  Hereinafter, a configuration centering on protection of a phosphor as a wavelength converter will be described. A wavelength converter such as a phosphor can be appropriately selected depending on the intended use and purpose. For example, CsI can greatly increase the efficiency of wavelength conversion of X-rays into visible light, but there is room for improvement in external resistance such as moisture. The following description is extremely useful from the viewpoint of substantial improvement in resistance.

  FIG. 10 is a schematic configuration diagram for explaining an example when the photoelectric conversion apparatus shown in FIG. 1 is used in an X-ray imaging apparatus.

  In FIG. 10, 101 is a housing, 102 is a grid, and 103 is a photoelectric conversion device connected and received in the housing. Although not shown in FIG. 1, an X-ray source is provided on the left side of the drawing, and passes through a subject (an object of nondestructive inspection such as a person or an object) disposed between the X-ray source and the grid 102. The X-rays pass through the housing 101 via the grid 102 and are input to the photoelectric conversion device 103. As described above, the X-ray enters the phosphor of the photoelectric conversion device 103, is converted into light including the wavelength of the light receiving sensitivity region of the photoelectric conversion element, and the converted light is photoelectrically converted and transmitted through the subject. Can be obtained as electrical information. The grid 102 is provided to prevent X-rays scattered in the subject from being input to the photoelectric conversion device.

  FIG. 11 is a schematic plan view of a first example in which the photoelectric conversion device of the present invention is applied to an X-ray sensor. FIG. 12 is a schematic cross-sectional view of the X-ray sensor of FIG. 201 is a flexible circuit board, 202 is a printed circuit board, 203 is a lead electrode portion on the sensor board, and 204 is a sealing material. The sealing material 204 is provided for the purpose of preventing corrosion of the extraction electrode 203.

  205 to 208 are sensor substrates on which sensor elements are formed, 209 is a base for holding the sensor substrates 205 to 208, and 210 is an adhesive for fixing the sensor substrates 205 to 208 and the base 209. is there. The sensor substrates 205 to 208 are aligned so that the pixel pitch is aligned in the two-dimensional direction, and are fixed to the base 209. 211 is a phosphor that converts X-rays into visible light, and 212 is an adhesive for bonding the sensor substrates 205 to 208 and the phosphor 211 together.

  X-rays that have passed through the subject from the X-ray source and are converted into visible light within the phosphor 211. The converted visible light passes through the adhesive immediately below the phosphor 211 and is incident on the sensor elements formed on the sensor substrates 205 to 208. This is photoelectrically converted and output to a two-dimensional image.

  FIG. 13 is a process diagram showing an example of a manufacturing process of the X-ray sensor shown in FIGS. 11 and 12. First, the sensor substrates 205 to 208 manufactured by a thin film semiconductor process are sliced to a required size using a rotary diamond blade or the like (step 301).

  Next, the printed circuit board 202 is attached to the lead electrodes 203 of the sensor boards 205 to 208 having a specified size via the flexible circuit board 201 (step 302).

  Next, the flexible circuit board 201 is bonded onto the lead electrode group (step 303), and a sealant 203 is applied with a dispenser or the like so as to wrap the bonded portion in that state (step 304). The sealed sensor substrates 205 to 208 are aligned so that the pixel pitch is aligned in the two-dimensional direction, and each substrate is placed and fixed on the base 209 to which the adhesive 210 is applied in advance (step 305).

  Thereafter, the phosphor 211 coated with the adhesive (or adhesive) 212 by spraying or the like is placed on the sensor substrates 205 to 208 and bonded together while applying a certain pressure with a roller from above (step 306).

  As described above, when a single sensor substrate 205 to 208 cannot be obtained, a plurality of sensor substrates can be artificially combined into a single substrate by adjusting the pixel pitch in the two-dimensional direction. By doing so, the yield of the sensor unit can be improved.

  In order to realize such a configuration, in the slicing step (step 301) of FIG. 13, careful attention is paid to matters such as element destruction and corrosion due to the chipping of the insulating film or protective film on the sensor substrate due to burrs or cutting powder generated during cutting. It is desirable to pay attention to. The insulating film and protective film of the sensor substrate cover the sensor element portion, the thin film transistor portion, the gate line, and the signal line, thereby preventing moisture or impurity ions such as sodium, potassium, and chlorine from entering, and preventing the metal wiring from being corroded.

  However, in the slicing process, if there is a defect due to damage to the insulating film or protective film caused by burrs or cutting powder generated at the time of cutting, moisture and impurity ions enter at the interface between the insulating film and the transparent insulating substrate, causing corrosion of the wiring. There is a case. Such corrosion of the wiring may eventually lead to disconnection. This results in, for example, a line defect as the image content and causes a significant image degradation.

  In addition, as described above, a plurality of, for example, four sensor substrates are aligned so that the pixel pitch is aligned in the two-dimensional direction, and each substrate is placed on a base on which an adhesive (or adhesive) is applied in advance. Then, in the process of placing the phosphor with the adhesive applied on the whole surface by spraying etc. on the four sensor substrates, and bonding them while applying a certain pressure with a roller from the top, dust that is embraced at the time of bonding It is desirable to pay attention to the fact that device breakdown and corrosion occur due to chipping or breakage of the insulating film or protective film on the sensor substrate due to the cutting powder or so-called dust.

  As described above, if the insulating film or protective film on the sensor substrate due to dust is chipped or broken to the vicinity of the gate line due to damage, not only does it cause pixel defects, but also moisture and impurities at the interface between the insulating film and the transparent insulating substrate. Ions may enter and cause corrosion of the wiring. The configuration of the present invention solves such problems.

  In addition, the present invention can simultaneously protect a phosphor that is a wavelength converter. These points will be further described with reference to the drawings.

  FIG. 14 is a schematic plan view of a second example in which the photoelectric conversion device of the present invention is applied to an X-ray sensor. FIG. 15 is a schematic sectional view of the X-ray sensor of FIG. 11 is different from FIG. 11 in that a metal foil (thin metal plate) 213 is formed on the phosphor 211 as shown in FIGS.

  In this case, the metal foil 213 acts as a barrier against moisture and unnecessary ions. Therefore, it is possible to protect the semiconductor such as the photoelectric conversion unit and the metal wiring from adverse effects. At the same time, the phosphor that is the wavelength converter can prevent moisture and unnecessary ions from entering.

  FIG. 16 is a schematic plan view of a third example in which the photoelectric conversion device of the present invention is applied to an X-ray sensor. FIG. 17 is a schematic cross-sectional view of the X-ray sensor of FIG. Intrusion of moisture also occurs at the interface between the substrate on which the photoelectric conversion element is formed and the metal wiring layer, insulating layer, semiconductor layer, or the like constituting the photoelectric conversion element, or at the interface between these layers.

  Therefore, as shown in FIGS. 16 and 17, it is preferable that the element formation region 215 such as the photoelectric conversion portion is sufficiently inside the periphery of the thin metal plate (metal foil) 214. By doing so, the distance from the peripheral portion where intrusion easily occurs can be increased, and the time for moisture or the like to reach the element formation region 215 can be delayed to such an extent that no practical problem occurs. As a result, the radiation metal noise countermeasure can be more effectively performed by making the thin metal plate 214 sufficiently large.

  As shown in FIGS. 16 and 17, in the case of a shape having a desired distance to the end portion, the entire apparatus is enlarged in order to have sufficient durability. In view of this, an example of a structure that can provide further durability will be described below.

  FIG. 18 is a schematic plan view of a fourth example in which the photoelectric conversion device of the present invention is applied to an X-ray sensor. FIG. 19 is a schematic cross-sectional view of the X-ray sensor of FIG. In the figure, the same reference numerals are used for the same parts as those in the above-described embodiments, and therefore, a duplicate description is omitted below.

  This embodiment is characterized in that a sealing material 216 of an organic resin or an inorganic material is provided around (outer periphery) of the thin metal plate 214 with respect to the photoelectric conversion device shown in FIGS. With this configuration, it takes time for moisture and the like to pass through the sealing material 216, and intrusion of moisture and the like into the interior can be suppressed, so that durability can be improved.

  FIG. 20 is a schematic cross-sectional view showing a further preferred example of the embodiment of the photoelectric conversion device according to the present invention. Since the reference numerals in the figure are as shown in FIG. 19, duplicate explanations are omitted here.

  In the present embodiment, the thin metal plate 214 is extended so as to have an inclined surface with respect to the configuration of FIG. 19, this end side is bent downward, and a resin sealing material 120 is provided on a part of the sensor substrate. Yes. In this configuration, the durability can be further improved by the space formed between the thin metal plate 214 and the phosphors and photoelectric conversion elements.

  FIG. 21 is a schematic sectional view showing an example of still another embodiment of the photoelectric conversion device according to the present invention. Since the reference numerals in the figure are as shown in FIG. 19, overlapping description is omitted. In this embodiment, the protruding portion of the thin metal plate 214 from the phosphor is bent along the end of the phosphor (right angle in the figure), and the outer periphery is sealed with an organic resin (or inorganic material) sealing material 120. It has a sealed configuration. According to this configuration, since the end face portion of the phosphor is covered with the metal, moisture and the like can be prevented from entering the phosphor, and the durability of the phosphor can be improved.

  Note that the thin metal plate 214 shown in FIGS. 14 to 21 may have a base and a protective layer, or a resin material or an inorganic material forming one of them.

  In addition, it is desirable that the thin metal plate 214 is attached to the phosphor 211 by providing the same or the same material as the pressure-sensitive adhesive or adhesive used when the phosphor 211 is provided in the photoelectric conversion unit.

[Correspondence between Invention and Embodiment]
In the above embodiment, the thin metal plates 3, 6, 21, and 214 correspond to conductive members, and the fluorescent plates 2 and 211 correspond to wavelength converters.

  Note that the present invention is not limited to the above-described examples, and it goes without saying that modifications and combinations can be made as appropriate within the scope of the gist of the present invention.

1 is a schematic cross-sectional view showing a first embodiment of a photoelectric conversion device according to the present invention. FIG. 2 is a schematic plan view of the photoelectric conversion device in FIG. 1. It is a typical partial expanded sectional view which shows the detailed structure of the A section of FIG. It is a typical partial expanded sectional view which shows the other detailed structure of the A section of FIG. It is a typical block diagram which shows the detail of the ground connection part of the structure of FIG. It is a typical block diagram which shows the other structural example of the ground connection part of the structure of FIG. It is a schematic block diagram which shows the connection structure at the time of taking earthing | grounding in an apparatus main body. It is a schematic block diagram which shows the connection structure at the time of taking earth | ground earth | ground to a digital circuit. It is a schematic block diagram which shows the connection structure at the time of connecting earth ground to an analog circuit. It is a typical block diagram explaining an example at the time of using the photoelectric conversion apparatus shown in FIG. 1 for an X-ray imaging device. It is a typical block diagram which shows an example which used the photoelectric conversion apparatus shown in FIG. 1 for the X-ray imaging device. It is typical sectional drawing of the X-ray sensor of FIG. FIG. 13 is a process diagram showing a manufacturing process of the photoelectric conversion device of FIGS. 11 and 12. It is a schematic plan view which shows the 2nd example which applied the photoelectric conversion apparatus of this invention to the X-ray sensor. It is typical sectional drawing of the X-ray sensor of FIG. It is a schematic plan view which shows the 3rd example which applied the photoelectric conversion apparatus of this invention to the X-ray sensor. It is typical sectional drawing which shows the X-ray sensor of FIG. It is a schematic plan view which shows the 4th example which applied the photoelectric conversion apparatus of this invention to the X-ray sensor. It is typical sectional drawing of the X-ray sensor of FIG. It is typical sectional drawing which shows 2nd Embodiment of the photoelectric conversion apparatus which concerns on this invention. It is typical sectional drawing which shows 3rd Embodiment of the photoelectric conversion apparatus which concerns on this invention. It is typical sectional drawing which shows the conventional structure of the photoelectric conversion apparatus used for a X-ray detection.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sensor base | substrate 2,211 Phosphor 3,6 Thin metal plate 4 Adhesive 7 Base resin film 8 Protective resin film 9 Ring metal member 10 Hole 11 Contact part 12 Mounting member 12a Bonding member 13 Electric circuit board 14 Contact terminal 15 Ground Cable 16 Device body 17 Power supply circuit 18 Interface 19 Analog circuit 20 Digital circuit 21 Wiring 22, 23 Ground wiring 101 Housing 102 Grid 103 Photoelectric conversion device 201 Flexible circuit board 202 Printed circuit board 203 Lead electrode parts 204, 216 Sealing Materials 205 to 208 Sensor substrate 209 Base 210 Adhesive 213, 214 Metal foil (thin metal plate)
215 Element formation region

Claims (15)

  A photoelectric conversion device comprising a plurality of substrates having a plurality of photoelectric conversion elements arranged adjacent to each other, and a conductive member arranged on the photoelectric conversion elements over the plurality of substrates arranged adjacent to each other.   The photoelectric conversion device according to claim 1, further comprising a wavelength converter between the photoelectric conversion element and the conductive member.   The photoelectric conversion device according to claim 2, wherein the wavelength converter includes a phosphor.   The photoelectric conversion device according to claim 1, wherein the conductive member includes an insulating base and a conductive layer provided thereon.   The photoelectric conversion device according to claim 1, wherein the conductive member includes a metal.   The photoelectric conversion device according to claim 5, wherein the metal includes aluminum.   The photoelectric conversion device according to claim 1, wherein the conductive member is grounded.   The photoelectric conversion device according to claim 1, wherein a region where the photoelectric conversion element is formed is smaller than a region where the conductive member is disposed.   The photoelectric conversion device according to claim 1, wherein the periphery of the conductive member is sealed.   2. The photoelectric conversion device according to claim 1, wherein a periphery of the conductive member extends around a substrate having the photoelectric conversion element, and an end thereof is sealed so as to surround the substrate. .   The photoelectric conversion device according to claim 10, wherein a space is provided between the periphery of the substrate and the conductive member.   The photoelectric conversion device according to claim 10, wherein an end face of the substrate is in close contact with the conductive member.   The photoelectric conversion device according to claim 11, wherein a resin is disposed in the space.   The photoelectric conversion device according to claim 1, wherein a resin covering the substrate and the entire end surface of the conductive member is disposed. The photoelectric conversion device according to claim 5, wherein the metal has a thickness of 100 microns or less.

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