WO2010125607A1

WO2010125607A1 - Radiation detector and method of manufacturing same

Info

Publication number: WO2010125607A1
Application number: PCT/JP2009/001957
Authority: WO
Inventors: 鈴木準一; 吉牟田利典; 古井真悟
Original assignee: 株式会社島津製作所
Priority date: 2009-04-30
Filing date: 2009-04-30
Publication date: 2010-11-04

Abstract

In a radiation detector, a cable (4A) and a common electrode (3) are not directly connected, but indirectly connected to each other through a conductor (here, the single line (4B)) by connecting the common electrode (3) and the single line (4B) formed thinner than the cable (4A) in the thickness direction to each other, and by connecting the single line (4B) and the cable (4A) to each other at a portion other than a semiconductor (2). Since the single line (4B) is thinner than the cable (4A) in the thickness direction, the single line (4B) thinner than the cable (4A) in the thickness direction is connected to the common electrode (3). Consequently, the connecting operation can be easily performed, and damage to and stress in the semiconductor (2) and the common electrode (3) can be avoided.

Description

Radiation detector and manufacturing method thereof

The present invention relates to a radiation detector that includes a radiation-sensitive semiconductor that generates a charge upon incidence of radiation and is used in the medical field, the industrial field, and the nuclear field, and a manufacturing method thereof.

Conventionally, this type of radiation (eg, X-ray) detector indirectly converts radiation into charge by generating light once by the incidence of radiation (eg, X-ray) and generating charge from the light. Indirect conversion type detectors that detect radiation and “direct conversion type” detectors that detect radiation by directly converting radiation into electric charge by generating charges by the incidence of radiation. is there. Note that a radiation-sensitive semiconductor generates a charge.

As shown in FIG. 20, the direct conversion type radiation detector includes an active matrix substrate 51, a radiation-sensitive semiconductor 52 that generates a charge by the incidence of radiation, and a common electrode 53 for applying a bias voltage. Yes. The active matrix substrate 51 is configured by forming a plurality of collection electrodes (not shown) on the radiation incident surface side and disposing an electric circuit (not shown) for accumulating / reading charges collected by each collection electrode. ing. Each collection electrode is set in a two-dimensional matrix arrangement within the radiation detection effective area SA.

The semiconductor 52 is stacked on the incident surface side of the collecting electrode of the active matrix substrate 51, and the common electrode 53 is formed in a planar shape on the incident side of the semiconductor 52 and stacked. A lead wire 54 for supplying bias voltage is connected to the incident surface of the common electrode 53.

When detecting radiation with a radiation detector, a bias voltage is applied from a bias supply power source (not shown) to a bias voltage applying common electrode 53 via a lead wire 54 for supplying a bias voltage. In a state where a bias voltage is applied, electric charges are generated by the radiation-sensitive semiconductor 52 with the incidence of radiation. This generated charge is once collected by the collecting electrode. The collected charge is taken out as a radiation detection signal for each collecting electrode by an electric circuit for accumulation / reading composed of a capacitor, a switching element, electric wiring, and the like.

Each collection electrode of the two-dimensional matrix array corresponds to an electrode (pixel electrode) corresponding to each pixel of the radiation image. By extracting the radiation detection signal, a radiation image corresponding to the two-dimensional intensity distribution of the radiation projected on the radiation detection effective area SA can be created.

In the conventional radiation detector shown in FIG. 20, the case where the semiconductor 52 is formed using amorphous selenium will be described as an example. As described above, the common electrode 53 is formed on the incident side of the semiconductor 52, and a bias voltage is applied to the common electrode 53. In the case where the semiconductor 52 is a thick film of about 1.0 mm, the semiconductor 52 is operated with high sensitivity. As a bias voltage, a high voltage of about 10 kV or more is conventionally used. Further, when the electrode region of the common electrode 53 is expanded and its end approaches the edge of the semiconductor 52, the semiconductor 52 is laminated on the active matrix substrate 51 as described above. The distance between the ground line and other patterns on the substrate 51 is reduced. A high voltage of about 10 kV or more is used as the bias voltage, and creeping discharge occurs when the distance between the common electrode 53 and the pattern is reduced.

Therefore, in order to prevent the occurrence of creeping discharge or the like, the common electrode 53 is formed inside the semiconductor 52 as shown in FIG. 20 so that the edge of the common electrode 53 has a certain distance from the edge of the semiconductor 52. Each is formed to keep.

Further, in order to safely supply a bias voltage and apply it to the common electrode 53, the cable used as the lead wire 54 for supplying the bias voltage not only needs to withstand a high voltage, but also an insulator covering the cable. It is necessary to perform wiring so that (that is, the covering portion of the cable) reaches the common electrode 53. As will be described later, when sealing with resin (protective member), a cable having as thin a coating as possible is necessary, but the diameter of such a high voltage cable needs to be at least about 2 mm.

On the other hand, in order to prevent damage to the semiconductor 52 and the common electrode 53 due to X-rays and contamination of the radiation detector, sealing is performed with a resin (protective member) (for example, see Patent Document 1). At this time, for the portion where the cable passes over the semiconductor 52, it is necessary to secure a thickness of 2 mm which is the diameter of the cable so that the cable does not protrude above the resin.
JP 2001-148475 A (pages 14-17, FIG. 9)

Therefore, in order to pass the cable having a diameter of about 2 mm over the semiconductor 52, the thickness of the structure covered with the resin is set to 2 mm or more. However, in this shape, the active matrix substrate 51 is changed when the temperature is changed due to the difference in linear expansion coefficient between the upper cover glass (insulating auxiliary plate), the active matrix substrate 51, the semiconductor 52, and the resin covering the semiconductor 52. There is a problem that a strong force acts between the semiconductor 52 and the semiconductor 52, and the semiconductor 52 may be peeled off from the active matrix substrate 51 in some cases.

Moreover, even when an epoxy resin having a relatively high X-ray transmittance is used for this resin, for example, the thickness is about 2 mm, so that the performance of the detector is deteriorated. Therefore, by reducing the thickness of the X-ray irradiation part to about 1 mm and connecting the common electrode 53 to the lead wire (cable) 54 for supplying the bias voltage to about 2 mm, the detector performance is lowered. Although it can be avoided, there is a disadvantage that the structure becomes complicated in that case.

Furthermore, in order to provide pressure resistance, the cable is formed of a hard material such as a fluororesin, and connecting a long cable to the common electrode 53 as it is is when a large mechanical stress is applied. In addition, since long cables are used, connection work is difficult.

The present invention has been made in view of such circumstances, and provides a radiation detector capable of easily performing connection work and avoiding damage and stress to a semiconductor and a common electrode, and a method of manufacturing the same. The purpose is to do.

In order to achieve such an object, the present invention has the following configuration.
That is, the radiation detector according to the present invention is a radiation detector that detects radiation, and includes a radiation-sensitive semiconductor that generates an electric charge upon incidence of radiation, and a bias formed in a planar shape on the incident side of the semiconductor. A common electrode for applying a voltage, a cable for supplying a bias voltage, and a conductor formed thinner in the thickness direction than the cable, connecting the common electrode and the conductor, and at a place other than the semiconductor, A conductor and the cable are connected.

According to the radiation detector of the present invention, the cable for supplying the bias voltage is not directly connected to the common electrode for applying the bias voltage, but the common electrode and the conductor are connected, and the conductor and the cable are connected at a place other than the semiconductor. By connecting, the cable and the common electrode are indirectly connected through the conductor. Since the conductor is made thinner in the thickness direction than the cable, it is connected to the common electrode with a conductor thinner in the thickness direction than the cable, and the semiconductor or common by the insulator covering the cable (that is, the covering portion of the cable) It is possible to avoid occurrence of damage and stress to the electrode. Further, the connection work is facilitated by connecting to the common electrode with a conductor thinner in the thickness direction than the cable. As a result, the connection work is easy to perform, and it is possible to avoid the occurrence of damage and stress on the semiconductor and the common electrode.

In the above-described radiation detector of the present invention, it is preferable that at least the connection portion between the common electrode, the conductor and the cable is sealed with resin. By sealing with resin in this way, the common electrode and the connection point between the conductor and cable are stably installed, the mechanical strength of the entire radiation detector is increased, and creeping discharge and corona near the common electrode are further increased. The occurrence of discharge can be prevented.

The radiation detectors of these inventions described above may include a structure surrounding the semiconductor from its periphery, and the conductor and the cable may be connected at the position of the structure. Further, a structure surrounding the semiconductor from its periphery may be provided, and the conductor and the cable may be connected inside the structure and at a place other than the semiconductor. The former invention is useful when there is little spatial space between the structure and the semiconductor. In the case of the latter invention, there is a space between the structure and the semiconductor, which is useful when there is room in the space. Furthermore, in the case of the latter invention, since it is not necessary to connect a conductor and a cable in the location of a structure, it can be set as a simpler structure.

In the radiation detectors of these inventions described above, it is preferable to have a structure in which an insulator is installed on the lower side of the conductor outside at least the connection point with the common electrode. If an insulator is not installed, there is a possibility that a discharge will occur in at least a conductor outside the connection point with the common electrode. However, if an insulator is installed, the discharge can be prevented.

A method of manufacturing a radiation detector according to the present invention is a method of manufacturing a radiation detector for detecting radiation, wherein (A) a conductor formed thinner in the thickness direction than a cable for supplying a bias voltage, and radiation A first connection step of connecting a bias voltage applying common electrode formed in a planar shape on the incident side of the radiation-sensitive semiconductor that generates electric charge upon incidence of (B), at the location other than the semiconductor And a second connecting step for connecting the conductor and the cable.

According to the method for manufacturing a radiation detector of the present invention, in the first connection step (A), the conductor that is formed thinner in the thickness direction than the bias voltage feeding cable and the radiation that generates an electric charge by the incidence of the radiation. A bias voltage application common electrode formed in a planar shape is connected to the incident side of the sensitive semiconductor. On the other hand, in the second connection step (B), the conductor and the cable are connected at a place other than the semiconductor. Instead of connecting the cable directly to the common electrode, in these connection processes, the common electrode and the conductor are connected, and the conductor and the cable are connected at a place other than the semiconductor, so that the cable and the common electrode are connected via the conductor. And indirectly. Since the conductor is thinner than the cable in the thickness direction, the conductor is thinner in the thickness direction than the cable, and it is connected to the common electrode, making connection work easier, causing damage and stress to the semiconductor and the common electrode. Can be avoided.

The above-described method for manufacturing a radiation detector according to the present invention includes a frame mounting step (C). Specifically, in the frame attaching step (C), a frame surrounding the semiconductor from its periphery is attached on a substrate on which a circuit for accumulating and reading out charges is formed. Further, when the frame attachment process of (C) is provided, the conductor and the cable at the location of the structure composed of the frame attached in the frame attachment process of (C) in the second connection process of (B) described above. And may be connected. In the second connection step (B) described above, the conductor and the cable are connected to each other inside the structure including the frame attached in the frame attachment step (C) and at a place other than the semiconductor. Also good. In the case of the former invention, as described in the invention of the radiation detector, it is useful when there is little space between the structure and the semiconductor. In the case of the latter invention, as described in the invention of the radiation detector, there is a space between the structure and the semiconductor, which is useful when there is a sufficient space. Furthermore, in the case of the latter invention, since it is not necessary to connect a conductor and a cable in the location of a structure, it can be set as a simpler structure.

Further, in the case of the former invention, it is preferable to include the first installation step (D) and the second installation step (E), or to include the installation step (E ′).

In the case where the first installation step (D) and the second installation step (E) are provided, specifically, in the first installation step (D), there is no insulator covering the cable, and the conductor of the cable. In the second installation step (E), an insulator is placed on the above-described substrate below the exposed portion, and in the second installation step (E), at least the conductor outside the connection point with the common electrode is placed. An insulator is installed on the lower side, and in the frame attachment process in (C), a frame is attached on the substrate together with the insulator installed in the first installation process in (D), and in the second installation process in (E), An insulator is installed so as to fit in the groove portion of the frame attached in the frame attachment step (C) and in the connection portion between the conductor and the cable. If an insulator is not installed, there is a possibility that a discharge will occur between the part where there is no insulator covering the cable and the cable conductor is exposed and the circuit pattern formed on the board. The installation can prevent discharge. In addition, as described in the invention of the radiation detector, if an insulator is not installed, a discharge is caused by at least the conductor outside the connection portion with the common electrode and the circuit pattern formed on the substrate. Although there is a possibility of causing this, it is possible to prevent discharge by installing an insulator.

In addition, when the installation step (E ′) is provided, specifically, in the installation step (E ′), at least the lower side of the conductor outside the connection portion with the common electrode among the conductors, and Install insulation underneath the part where there is no insulation covering the cable and the cable conductors are exposed. If no insulator is installed, the conductor is at least outside the connection point with the common electrode, and there is no insulator covering the cable, and the conductor of the cable is exposed on the board. Although there is a possibility of causing a discharge in the circuit pattern, it is possible to prevent the discharge by installing an insulator.

According to the radiation detector and the manufacturing method thereof according to the present invention, the common electrode and the conductor are connected without connecting the bias voltage feeding cable directly to the common electrode for applying the bias voltage, and the part other than the semiconductor is connected. By connecting the conductor and the cable at, the cable and the common electrode are indirectly connected through the conductor. Since the conductor is thinner than the cable in the thickness direction, the conductor is thinner in the thickness direction than the cable, and it is connected to the common electrode, making connection work easier, causing damage and stress to the semiconductor and the common electrode. Can be avoided.

(A) is a schematic plan view of the direct conversion type flat panel X-ray detector (FPD) according to the first embodiment, (b) is a cross-sectional view taken along line AA in (a), (c) ) Is a cross-sectional view taken along the line BB in FIG. It is a block diagram which shows the equivalent circuit of the active matrix board | substrate of a flat panel type X-ray detector (FPD). It is a schematic sectional drawing of the active-matrix board | substrate of a flat panel type X-ray detector (FPD). 2 is a flowchart showing a flow of a manufacturing method of a series of flat panel X-ray detectors (FPDs) according to the first embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the manufacturing process of the flat panel type X-ray detector (FPD) based on Example 1, 2, (a) is a schematic plan view, (b) is an AA arrow view of (a). It is sectional drawing, (c) is BB arrow sectional drawing of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the manufacturing process of the flat panel type X-ray detector (FPD) based on Example 1, (a) is a schematic plan view, (b) is AA arrow sectional drawing of (a). (C) is a cross-sectional view taken along the line BB of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the manufacturing process of the flat panel type X-ray detector (FPD) based on Example 1, (a) is a schematic plan view, (b) is AA arrow sectional drawing of (a). (C) is a cross-sectional view taken along the line BB of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the manufacturing process of the flat panel type X-ray detector (FPD) based on Example 1, (a) is a schematic plan view, (b) is AA arrow sectional drawing of (a). (C) is a cross-sectional view taken along the line BB of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the manufacturing process of the flat panel type X-ray detector (FPD) based on Example 1, (a) is a schematic plan view, (b) is AA arrow sectional drawing of (a). (C) is a cross-sectional view taken along the line BB of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the manufacturing process of the flat panel type X-ray detector (FPD) based on Example 1, (a) is a schematic plan view, (b) is AA arrow sectional drawing of (a). (C) is a cross-sectional view taken along the line BB of (a). (A) to (c) are schematic cross-sectional views respectively showing combinations of intermediate layers which are carrier-selective high-resistance semiconductor layers. (A) is a schematic plan view of a direct conversion type flat panel X-ray detector (FPD) according to the second embodiment, (b) is a cross-sectional view taken along line AA in (a), and (c) ) Is a cross-sectional view taken along the line BB in FIG. 12 is a flowchart showing a flow of a series of flat panel X-ray detector (FPD) manufacturing methods according to the second embodiment. FIG. 5 is a schematic view illustrating a manufacturing process of a flat panel X-ray detector (FPD) according to a second embodiment, (a) is a schematic plan view, and (b) is a cross-sectional view taken along line AA in (a). (C) is a cross-sectional view taken along the line BB of (a). FIG. 5 is a schematic view illustrating a manufacturing process of a flat panel X-ray detector (FPD) according to a second embodiment, (a) is a schematic plan view, and (b) is a cross-sectional view taken along line AA in (a). (C) is a cross-sectional view taken along the line BB of (a). FIG. 5 is a schematic view illustrating a manufacturing process of a flat panel X-ray detector (FPD) according to a second embodiment, (a) is a schematic plan view, and (b) is a cross-sectional view taken along line AA in (a). (C) is a cross-sectional view taken along the line BB of (a). FIG. 5 is a schematic view illustrating a manufacturing process of a flat panel X-ray detector (FPD) according to a second embodiment, (a) is a schematic plan view, and (b) is a cross-sectional view taken along line AA in (a). (C) is a cross-sectional view taken along the line BB of (a). (A) is a schematic plan view of a direct conversion type flat panel X-ray detector (FPD) according to the third embodiment, (b) is a cross-sectional view taken along line AA in (a), and (c) ) Is a cross-sectional view taken along the line BB in FIG. It is the schematic of the direct conversion type flat panel type X-ray detector (FPD) which concerns on a modification, (a) is a schematic sectional drawing when installing a base, (b) is when interposing a copper plate FIG. It is a schematic sectional drawing of the conventional radiation detector.

DESCRIPTION OF SYMBOLS 1 ... Active matrix substrate 2 ... (Radiosensitive type) semiconductor 3 ... Common electrode (for bias voltage application) 4A ... Cable (for bias voltage feeding) 4B ... Single wire 4C ... (Ribbon-like) Metal plate 6 ...

Frame

8 , 9, 8 '... Insulating sheet

Embodiment 1 of the present invention will be described below with reference to the drawings. FIG. 1A is a schematic plan view of a direct conversion type flat panel X-ray detector (hereinafter abbreviated as “FPD” as appropriate) according to the first embodiment, and FIG. 1A is a cross-sectional view taken along line AA in FIG. 1A, FIG. 1C is a cross-sectional view taken along line BB in FIG. 1A, and FIG. 2 is a flat panel X-ray detector (FPD). ) Is a block diagram showing an equivalent circuit of the active matrix substrate, and FIG. 3 is a schematic sectional view of the active matrix substrate of the flat panel X-ray detector (FPD). In the present embodiment 1, including later-described

embodiments

2 and 3, a flat panel X-ray detector (FPD) will be described as an example of the radiation detector. Moreover, illustration of an upper cover glass is abbreviate | omitted in Fig.1 (a).

As shown in FIGS. 1 (a) and 1 (b), the FPD according to the first embodiment is a radiation that generates charges by the incidence of the active matrix substrate 1 and radiation (X-rays in the first to third embodiments). A sensitive semiconductor 2 and a common electrode 3 for applying a bias voltage are provided. As shown in FIGS. 2 and 3, the active matrix substrate 1 has a plurality of collecting electrodes 11 formed on the radiation incident surface side, and an electric circuit 12 for storing and reading out charges collected by the collecting electrodes 11. It is configured. Each collection electrode 11 is set in a two-dimensional matrix arrangement within the radiation detection effective area SA. The active matrix substrate 1 corresponds to a substrate on which a circuit for accumulating and reading out charges is formed in the present invention, and the radiation sensitive semiconductor 2 is equivalent to the radiation sensitive semiconductor in the present invention, and is used for applying a bias voltage. The electrode 3 corresponds to a common electrode for applying a bias voltage in the present invention.

As shown in FIGS. 1A and 1B, the semiconductor 2 is laminated on the incident surface side of the collecting electrode of the active matrix substrate 1, and the common electrode 3 is formed in a planar shape on the incident side of the semiconductor 2 And laminated. A lead wire 4 for supplying bias voltage is connected to the incident surface of the common electrode 3.

As shown in FIG. 1A, the lead wire 4 is formed by a bias voltage feeding cable 4A and a single wire 4B formed thinner in the thickness direction than the cable 4A. The insulator covering the cable 4A at the end (that is, the covering portion of the cable 4A) is peeled off to make only the core wire 4a. The core wire 4a and the single wire 4B of the cable 4A are connected via a conductive paste (for example, silver paste), and the single wire 4B and the common electrode 3 are similarly connected via a conductive paste. A connection location between the single wire 4B and the core wire 4a of the cable 4A is a location other than the semiconductor 2, and is a location of a structure including the frame 6 in the first embodiment. In the first embodiment, the single wire 4B is adopted as the conductor. In the case of the single wire 4B, since it is not a twisted wire, there is little fear of disconnection due to twisting. The bias voltage supply cable 4A corresponds to the bias voltage supply cable in the present invention, and the single line 4B corresponds to the conductor in the present invention.

1) As shown in FIGS. 1B and 1C, the FPD is protected by the upper cover glass 5. Specifically, a frame 6 surrounding the semiconductor 2 from its periphery is attached on the active matrix substrate 1, and the upper cover glass 5 is supported by the frame 6. The upper cover glass 5 is preferably fixedly formed by a resin film 7 made of a curable synthetic resin so that the upper cover glass 5 covers the semiconductor 2 and the common electrode 3. By this resin film 7, the connection portion of the common electrode 3, the single wire 4B, and the core wire 4a of the cable 4A is also sealed with resin. Note that only the connection portion between the common electrode 3, single wire 4B and the core wire 4a of the cable 4A may be sealed with resin, and at least the connection portion between the common electrode 3, single wire 4B and the core wire 4a of the cable 4A is sealed with resin. If it does, it will not be limited in particular. The frame 6 corresponds to the frame in the present invention.

As shown in FIGS. 1 (a) to 1 (c), an insulating sheet 8 is provided on the lower side of the single wire 4B outside the connecting portion with the common electrode 3 in the single wire 4B. Further, as shown in FIGS. 1A and 1C, there is no insulator covering the cable 4A and insulation is provided below the portion where the conductor of the cable 4A (here, the core wire 4a) is exposed. A sheet 9 is provided. The insulating

sheets

8 and 9 correspond to the insulator in this invention.

As shown in FIGS. 2 and 3, the active matrix substrate 1 is formed with the collecting electrode 11 as described above, and the storage / reading electric circuit 12 is provided. The electric circuit 12 for accumulation / reading includes a capacitor 12A, a TFT (thin film field effect transistor) 12B as a switching element, a gate line 12a, a data line 12b, and the like, and one capacitor 12A and one for each collecting electrode 11 TFT12B are connected in association with each other.

A gate driver 13, a charge / voltage conversion amplifier 14, a multiplexer 15, and an A / D converter 16 are arranged and connected around the storage / reading electric circuit 12 of the active matrix substrate 1. The gate driver 13, the charge / voltage conversion amplifier 14, the multiplexer 15, and the A / D converter 16 are connected to a substrate different from the active matrix substrate 1. Note that some or all of the gate driver 13, the charge-voltage conversion amplifier 14, the multiplexer 15, and the A / D converter 16 may be built in the active matrix substrate 1.

When X-rays are detected by the FPD, a bias voltage is applied from a bias supply power source (not shown) to the common electrode 3 for bias voltage application via a lead wire 4 for supplying bias voltage. As described above, the lead wire 4 is formed by the cable 4A and the single wire 4B. The lead wire 4 connects the core wire 4a and the single wire 4B of the cable 4A and connects the single wire 4B and the common electrode 3, so that a bias is supplied. A bias voltage from a power source (not shown) is applied to the common electrode 3 via the cable 4A and the single wire 4B. With the bias voltage applied, charges are generated in the radiation-sensitive semiconductor 2 with the incidence of radiation (X-rays in Examples 1 to 3). The generated charges are once collected by the collecting electrode 11. The electric charge collected by the storage / readout electric circuit 12 is taken out as a radiation detection signal for each collection electrode 11 (in the first to third embodiments, an X-ray detection signal).

Specifically, the charges collected by the collecting electrode 11 are temporarily accumulated in the capacitor 12A. Then, a read signal is sequentially applied from the gate driver 13 to the gate of each TFT 12B through the gate line 12a. By giving the read signal, the TFT 12B to which the read signal is given shifts from OFF to ON. As the data line 12b connected to the source of the shifted TFT 12B is sequentially switched and connected by the multiplexer 15, the charge accumulated in the capacitor 12A is read from the TFT 12B via the data line 12b. The read charge is amplified by the charge / voltage conversion amplifier 14 and sent to the A / D converter 16 as a radiation detection signal (X-ray detection signal in the first to third embodiments) for each collection electrode 11 by the multiplexer 15. To convert from analog value to digital value.

For example, when an FPD is provided in an X-ray fluoroscopic apparatus, an X-ray detection signal is sent to an image processing circuit at a subsequent stage, image processing is performed, and a two-dimensional X-ray fluoroscopic image is output. Each collection electrode 11 in the two-dimensional matrix array corresponds to an electrode (pixel electrode) corresponding to each pixel of the radiation image (here, a two-dimensional X-ray fluoroscopic image). By extracting a radiation detection signal (X-ray detection signal in Examples 1 to 3), a radiation image (here, a two-dimensional X-ray fluoroscopic image) corresponding to the two-dimensional intensity distribution of the radiation projected onto the radiation detection effective area SA Can be created. That is, the FPD according to the first embodiment including the second and third embodiments described later detects the two-dimensional intensity distribution of the radiation (X-rays in the first to third embodiments) projected onto the radiation detection effective area SA. It is a two-dimensional array type radiation detector that can be used.

Next, an FPD manufacturing method will be described with reference to FIGS. FIG. 4 is a flowchart showing a flow of a series of manufacturing methods of a flat panel X-ray detector (FPD) according to the first embodiment, and FIGS. 5 to 10 illustrate flat panel X-ray detection according to the first embodiment. It is the schematic which shows the manufacturing process of a container (FPD). As in FIG. 1, FIGS. 5 (a) to 10 (a) are schematic plan views, and FIGS. 5 (b) to 10 (b) are the same as FIGS. 5 (a) to 10 (a). FIG. 5C is a cross-sectional view taken along the line AA, and FIGS. 5C to 10C are cross-sectional views taken along the line BB in FIGS. 5A to 10A. Similarly to FIG. 1 (a), the upper cover glass is not shown in FIGS. 5 (a) to 10 (a).

(Step S1) Installation of Insulating Sheet As shown in FIG. 5, the semiconductor 2 is laminated on the incident surface side of the collecting electrode of the active matrix substrate 1, and the common electrode 3 is formed in a planar shape on the incident side of the semiconductor 2 In the laminated state, as shown in FIGS. 6A and 6C, the insulating sheet 9 is placed on the active matrix substrate 1. This installation place is a place below the portion where there is no insulator covering the cable 4A (see FIGS. 1, 9, and 10) and the conductor (core wire 4a) of the cable 4A is exposed. . 5 and 6 and 3A in FIG. 7 to be described later are common for connecting a single wire 4B (see FIGS. 1, 9, and 10) to be described later and the common electrode 3. This is a protruding portion of the electrode 3. This step S1 corresponds to the first installation step (D) in this invention.

(Step S2) Attachment of Frame As shown in FIG. 7, a frame 6 surrounding the semiconductor 2 from its periphery is attached on the active matrix substrate 1 together with the insulating sheet 9 installed in Step S1. As shown in FIG. 7A, the frame 6 is provided with a groove 6A at a portion facing the protruding portion 3A, and a cut portion 6B communicated with the groove 6A. The grooves 6A and the cut portions 6B may be provided after the frame 6 is attached on the active matrix substrate 1, or the frame 6 may be attached on the active matrix substrate 1 after being provided in advance. Further, as shown in FIG. 7C, the notch 6B penetrates the frame 6 in the introduction region 6a for introducing the cable 4A (see FIGS. 1, 9, and 10) into the frame 6, and the groove 6B In the groove side region 6b close to 6A, the frame 6 is formed so as to remain in the middle level. Also, between the introduction region 6a and the groove side region 6b, the core wire 4a extends smoothly in order to prevent stress due to bending of the core wire 4a (see FIGS. 1, 9, and 10) of the cable 4A. Thus, the frame 6 is gradually inclined. This step S2 corresponds to the frame attaching step (C).

(Step S3) Installation of Insulating Sheet Of the single wire 4B (see FIG. 1, FIG. 9, and FIG. 10), as shown in FIG. 8, insulation is performed on the lower side of the single wire 4B outside the connection point with the common electrode 3. The seat 8 is installed. Specifically, the insulating sheet is fitted so as to fit in the groove 6A of the frame 6 attached in step S2 and in the connection portion between the single wire 4B and the core wire 4a of the cable 4A (see FIGS. 1, 9, and 10). 8 is installed. In addition, about the installation place of the insulating sheet 8, you may include the connection location of the single wire 4B and the common electrode 3. FIG. However, it is necessary to install so as not to damage the surface of the semiconductor 2 and the common electrode 3. That is, the insulating sheet 8 may be installed below the single wire 4B at the connection point with the common electrode 3, and at least the single wire 4B below the single wire 4B outside the connection point with the common electrode 3. If the insulating sheet 8 is installed, it will not be specifically limited. This step S3 corresponds to the second installation step (E).

(Step S4) Installation of Cable / Single Wire As shown in FIG. 9, the cable 4A and the core wire 4a are inserted into the cut portion 6B of the frame 6 (see FIG. 7A) so that the cable is placed on the insulating sheet 9. 4A and the core wire 4a are installed. And it installs so that the front-end | tip of the core wire 4a may be located on the insulating sheet 8. FIG. On the other hand, the single wire 4B is installed on the insulating sheet 8, the single wire 4B and the common electrode 3 are connected via a conductive paste, and the single wire 4B and the core wire 4a of the cable 4A are connected via a conductive paste. In this figure, the connecting portion between the single wire 4B and the common electrode 3 is formed on a pattern protruding slightly from the common electrode 3, but this is for easy understanding of the connecting portion, and there is no protruding pattern. Even if it is 3, there is no problem if it is directly connected to the inside of the common electrode 3. Since the upper cover glass 5 (see FIG. 10) is not installed at the time of this step S4, the cables 4A and single wires 4B can be easily installed from above. In addition, at the time before step S4, the single wire 4B and the core wire 4a of the cable 4A are connected by soldering in another place in advance, and the connected single wire 4B and the core wire 4a of the cable 4A are connected to the frame 6. The single wire 4B and the common electrode 3 may be connected after the cable 4A and the single wire 4B are installed on the insulating

sheets

8 and 9 by being inserted into the cut portion 6B. This step S4 corresponds to the first connection step (A) and corresponds to the second connection step (B).

(Step S5) Installation of Upper Cover Glass After installing the cables 4A and single wires 4B in step S4 and connecting them with conductive paste, the upper cover glass 5 is installed on the upper part of the frame 6 as shown in FIG. .

(Step S6) Resin Encapsulation A liquid room temperature curable resin composition is injected and cured between the active matrix substrate 1 and the upper cover glass 5 so that the room temperature curable resin composition after curing becomes a resin 7. The upper cover glass 5 is fixedly formed by a resin 7 made of a curable synthetic resin. As the curable synthetic resin, for example, a room temperature curable epoxy resin is used as an appropriate resin material. By performing a series of steps S1 to S6, an FPD as shown in FIG. 1 is completed.

For example, a glass substrate is used for the active matrix substrate 1, and a Pyrex (registered trademark), a Tempax (registered trademark) glass substrate, or a quartz glass substrate is used for the upper cover glass 5, for example. The thickness of the glass substrate of the active matrix substrate 1 and the glass substrate of the upper cover glass 5 is, for example, about 0.5 mm to 1.5 mm. The thickness of the semiconductor 2 is normally a thick film of about 0.5 mm to 1.5 mm, and the area is, for example, about 20 cm to 50 cm long × 20 cm to 50 cm wide. As for the insulating

sheets

8 and 9, a polyimide film of about 0.1 mm to 0.6 mm, preferably 0.2 mm thick is used.

The radiation-sensitive semiconductor 2 includes high-purity amorphous selenium (a-Se), alkali metals such as Na, halogens such as Cl, selenium doped with As or Te, and amorphous semiconductors of selenium compounds, CdTe, CdZnTe, PbI ₂ , It is preferably one of non-selenium-based polycrystalline semiconductors such as HgI ₂ and TlBr. Amorphous selenium, amorphous semiconductors of selenium and selenium compounds doped with alkali metal, halogen or As or Te, and non-selenium-based polycrystalline semiconductors are excellent in suitability for large area and thick film. In particular, when a-Se having a specific resistance of 10 ⁹ Ω or more, preferably 10 ¹¹ Ω or more is used for the semiconductor 2, the suitability for increasing the area and the suitability for increasing the film thickness are remarkably excellent.

Further, as the semiconductor 2, in addition to the sensitive semiconductor 2 described above, the incident surface (upper surface in FIG. 1B) or the surface opposite to the incident side (lower surface in FIG. 1B) or both surfaces The combination with the intermediate layer which is the formed carrier selective high resistance semiconductor layer is also included. As shown in FIG. 11A, an intermediate layer 2a is formed between the semiconductor 2 and the common electrode 3, and an intermediate layer 2b is formed between the semiconductor 2 and the collecting electrode 11 (see FIG. 3). Alternatively, as shown in FIG. 11B, the intermediate layer 2a may be formed only between the semiconductor 2 and the common electrode 3, or as shown in FIG. The intermediate layer 2b may be formed only between the collecting electrode 11 (see FIG. 3).

Thus, the dark current can be reduced by providing the carrier selective

intermediate layers

2a and 2b. The carrier selectivity mentioned here refers to the property that the contribution rate to the charge transfer action is remarkably different between electrons and holes which are charge transfer media (carriers) in the semiconductor.

As a method of combining the semiconductor 2 and the carrier-selective

intermediate layers

2a and 2b, the following modes are exemplified. When a positive bias voltage is applied to the common electrode 3, a material having a large contribution ratio of electrons is used for the intermediate layer 2a. Thereby, the injection of holes from the common electrode 3 is blocked, and the dark current can be reduced. A material having a large contribution ratio of holes is used for the intermediate layer 2b. Thereby, the injection of electrons from the collecting electrode 11 is blocked, and the dark current can be reduced.

Conversely, when a negative bias voltage is applied to the common electrode 3, a material having a large contribution ratio of holes is used for the intermediate layer 2a. Thereby, the injection of electrons from the common electrode 3 is blocked, and the dark current can be reduced. A material having a large contribution ratio of electrons is used for the intermediate layer 2b. Thereby, the injection of holes from the collecting electrode 11 is blocked, and the dark current can be reduced.

The thickness of the carrier selective

intermediate layers

2a and 2b is usually preferably in the range of 0.1 μm to 10 μm. If the thickness of the

intermediate layers

2a and 2b is less than 0.1 μm, there is a tendency that the dark current cannot be sufficiently suppressed, and conversely, if the thickness exceeds 10 μm, radiation detection tends to be hindered (for example, the sensitivity tends to decrease). Appears.

Further, semiconductors used for the carrier selective

intermediate layers

2a and 2b include polycrystalline semiconductors such as Sb ₂ S ₃ , ZnTe, CeO ₂ , CdS, ZnSe, and ZnS, alkali metals such as Na, halogens such as Cl, Selenium doped with As or Te and an amorphous semiconductor of a selenium compound may be mentioned as having excellent suitability for large area.

Among the semiconductors used for the

intermediate layers

2a and 2b, those having a large contribution of electrons include polycrystalline semiconductors such as CeO ₂ , CdS, CdSe, ZnSe, and ZnS that are n-type semiconductors, alkali metals, As, and Te. An amorphous body such as amorphous Se that has been doped to reduce the contribution ratio of holes can be used.

Moreover, examples of the material having a large contribution of holes include a polycrystalline semiconductor such as ZnTe which is a p-type semiconductor, and an amorphous material such as amorphous Se doped with halogen to reduce the contribution of electrons.

_{_{Furthermore, Sb 2 S 3, CdTe,}} CdZnTe, or PbI _2, HgI _2, TlBr, when the non-doped amorphous Se or Se compound, there is both a large contribution original electronic ones large contribution and the hole. In these cases, the film can be selectively formed by adjusting the film forming conditions, regardless of whether the contribution of electrons is large or the contribution of holes is large.

According to the flat panel X-ray detector (FPD) according to the first embodiment described above, the cable 4A for supplying the bias voltage is not directly connected to the common electrode 3 for applying the bias voltage. By connecting the conductor (single wire 4B in the first embodiment) and connecting the conductor (single wire 4B) and the core wire 4a of the cable 4A at a place other than the semiconductor 2, the cable 4A is connected to the cable 4A via the conductor (single wire 4B). The common electrode 3 is indirectly connected. Since the conductor (single wire 4B) is formed thinner than the cable 4A in the thickness direction, the conductor (single wire 4B) thinner than the cable 4A is connected to the common electrode 3, and the insulation covering the cable 4A. It is possible to avoid the occurrence of damage and stress on the semiconductor 2 and the common electrode 3 due to the body (that is, the covering portion of the cable 4A). Further, by connecting to the common electrode 3 with a conductor (single wire 4B) that is thinner in the thickness direction than the cable 4A, the connection work is facilitated. As a result, the connection work is easy to perform, and it is possible to avoid the occurrence of damage and stress on the semiconductor 2 and the common electrode 3. It has been confirmed that a high voltage of 20 kV was applied as the bias voltage and no abnormalities such as creeping discharge occurred.

In the FPD according to the first embodiment, preferably, at least the connection portion between the common electrode 3 and the conductor (single wire 4B in the first embodiment) and the cable 4A is sealed with resin. By sealing with the resin in this way, the connection portion between the common electrode 3 and the conductor (single wire 4B) and the cable 4A is stably installed, the mechanical strength of the entire FPD is increased, and further, in the vicinity of the common electrode 3 It is possible to prevent the occurrence of creeping discharge and corona discharge.

The FPD according to the first embodiment includes a structure (frame 6) surrounding the semiconductor 2 from the periphery thereof, and a conductor (a groove 6A of the frame 6 in the first embodiment) is a conductor (in the first embodiment, in the first embodiment). The single wire 4B) and the cable 4A are connected. In the case of the first embodiment, it is useful when there is little spatial space between the structure (frame 6) and the semiconductor 2.

In the FPD according to the first embodiment, preferably, an insulator (the main wire 4B in the first embodiment) is provided below the conductor (single wire 4B) outside the connection portion with the common electrode 3 at least. In Example 1, it has the structure which installs the insulating sheet 8). If an insulator (insulating sheet 8) is not installed, there is a possibility that a discharge will occur in at least the conductor (single wire 4B) outside the connecting portion with the common electrode 3 among the conductors (single wire 4B). Discharging can be prevented by installing (insulating sheet 8).

Focusing on the FPD manufacturing method according to the first embodiment, the following operations and effects are achieved. That is, according to the FPD manufacturing method according to the first embodiment, in step S4, the conductor (single wire 4B in the first embodiment) formed thinner in the thickness direction than the bias voltage feeding cable 4A and the radiation ( In the first embodiment, a bias voltage application common electrode 3 formed in a planar shape is connected to the incident side of the radiation-sensitive semiconductor 2 that generates charges by the incidence of X-rays). On the other hand, in step S4, the conductor (single wire 4B) and the core wire 4a of the cable 4A are connected at locations other than the semiconductor 2. The cable 4A is not directly connected to the common electrode 3, but the common electrode 3 and the conductor (single wire 4B) are connected in step S4, and the conductor (single wire 4B) and the core wire 4a of the cable 4A are connected at a place other than the semiconductor 2. By connecting these, the cable 4A and the common electrode 3 are indirectly connected via a conductor (single wire 4B). Since the conductor (single wire 4B) is formed thinner in the thickness direction than the cable 4A, it is connected to the common electrode 3 with a conductor (single wire 4B) thinner in the thickness direction than the cable 4A. It is possible to avoid the occurrence of damage and stress on the semiconductor 2 and the common electrode 3.

In the FPD manufacturing method according to the first embodiment, in step S2, the semiconductor 2 is formed on the active matrix substrate 1 on which a circuit for accumulating and reading electric charges (accumulation / readout electric circuit 12 in the first embodiment) is formed. A frame 6 surrounding the periphery is attached. Further, in the case of the first embodiment, in step S4 described above, the conductor (the first embodiment 1) is provided at the position of the structure including the frame 6 attached in step S2 (the groove 6A of the frame 6 in the first embodiment). Then, the single wire 4B) and the core wire 4a of the cable 4A are connected. In the case of the first embodiment, as described in the FPD according to the first embodiment, it is useful when there is little spatial space between the structure (frame 6) and the semiconductor 2.

Further, in the case of the first embodiment, in step S1, there is no insulator (the main wire 4a in this case) without an insulator covering the cable 4A and the conductor (the core wire 4a in this case) is exposed. In the first embodiment, the insulating sheet 9) is installed on the active matrix substrate 1, and in step S3, the conductor (single wire 4B in the first embodiment) is at least a conductor (single wire) outside the connecting portion with the common electrode 3. 4B) An insulator (in this embodiment, the insulating sheet 8) is installed on the lower side. In step S2, the frame 6 is attached on the active matrix substrate 1 together with the insulator (insulating sheet 9) installed in step S1, and in step S3, the groove 6A of the frame 6 attached in step S2 is used. An insulator (insulating sheet 8) is installed so as to fit in a connecting portion between the (single wire 4B) and the core wire 4a of the cable 4A. If an insulator (insulating sheet 9) is not installed, there is no insulator covering the cable 4A and the conductor (core wire 4a) of the cable 4A is exposed, and a circuit pattern formed on the active matrix substrate 1 However, it is possible to prevent discharge by installing an insulator (insulating sheet 9). Further, as described in the FPD according to the first embodiment, if the insulator (insulating sheet 8) is not installed, the conductor (single wire 4B) is at least a conductor (single wire) outside the connection portion with the common electrode 3 at least. 4B) and a circuit pattern formed on the active matrix substrate 1 may cause a discharge, but the discharge can be prevented by installing an insulator (insulating sheet 8).

Next, Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 12A is a schematic plan view of a direct conversion flat panel X-ray detector (FPD) according to the second embodiment, and FIG. 12B is an AA arrow in FIG. FIG. 12C is a cross-sectional view taken along the line BB in FIG. 12A. The portions common to the above-described first embodiment are denoted by the same reference numerals, the description thereof is omitted, and the illustration is omitted. Further, similarly to FIG. 1A, the illustration of the upper cover glass is omitted in FIG.

In the FPD according to the first embodiment described above, as shown in FIGS. 1 and 5 to 10, the single wire 4B is adopted as the conductor formed thinner in the thickness direction than the cable 4A. However, the FPD according to the second embodiment is used. As shown in FIG. 12, a ribbon-like metal plate 4C is adopted as a conductor formed thinner in the thickness direction than the cable 4A. That is, as shown in FIG. 12A, the lead wire 4 is formed of a cable 4A and a ribbon-like metal plate 4C formed thinner in the thickness direction than the cable 4A. The core 4a of the cable 4A and the ribbon-like metal plate 4C are connected via a conductive paste (for example, Ni-based conductive paste), and the ribbon-like metal plate 4C is also connected via the conductive paste. As in the first embodiment, the connection place between the ribbon-like metal plate 4C and the core wire 4a of the cable 4A is a place other than the semiconductor 2. Further, since the conductor is plate-like like the ribbon-like metal plate 4C, the area to be connected is larger than that of the single wire 4B of Example 1, the conduction resistance is low, and the FPD can be manufactured stably. Ribbon-shaped metal plate 4C corresponds to the conductor in the present invention.

In the FPD according to the first embodiment described above, as shown in FIGS. 1 and 5 to 10, there is no insulator covering the cable 4A, and the conductor of the cable 4A (here, the core wire 4a) is exposed. An insulating material (insulating sheet 9 in the first embodiment) is placed on the active matrix substrate 1 below the portion where it is present, and at least outside of the conductor (single wire 4B in the first embodiment) connected to the common electrode 3. Although an insulator (insulating sheet 8 in Example 1) was installed under the conductor (single wire 4B), the FPD according to Example 2 has a conductor (ribbon in Example 2) as shown in FIG. 4C), at least the lower side of the conductor (ribbon-like metal plate 4C) outside the connection point with the common electrode 3, and the conductor of the cable 4A (core wire 4a) without an insulator covering the cable 4A Becomes bare The lower part are being installed insulating sheet 8 '. That is, in the above-described first embodiment, the two insulating

sheets

8 and 9 are installed according to the size of the single wire 4B and the core wire 4a of the cable 4A, whereas in the second embodiment, one insulating sheet is provided. 8 'is simplified compared to the structure of the first embodiment. In Example 2, a step 6C is provided on the frame 6 as shown in FIGS. 12A and 12C, and the above-described insulating sheet 8 ′ is installed along the step 6C. The insulating sheet 8 ′ corresponds to an insulator in the present invention.

Next, an FPD manufacturing method will be described with reference to FIGS. 5 and 13 to 17. FIG. 5 is a schematic view showing a manufacturing process of a flat panel X-ray detector (FPD) according to the second embodiment. FIG. 5 is shared with the first and second embodiments. FIG. 13 is a flowchart showing the flow of a series of manufacturing methods of a flat panel X-ray detector (FPD) according to the second embodiment, and FIGS. 14 to 17 show the flat panel X-ray detection according to the second embodiment. It is the schematic which shows the manufacturing process of a container (FPD). Similarly to FIG. 12, FIGS. 14 (a) to 17 (a) are schematic plan views, and FIGS. 14 (b) to 17 (b) are the same as FIGS. 14 (a) to 17 (a). FIGS. 14 (c) to 17 (c) are cross-sectional views taken along the line BB in FIGS. 14 (a) to 17 (a). Similarly to FIG. 12A, the illustration of the upper cover glass is omitted in FIGS. 14A to 17A.

(Step T2) Attaching the Frame As shown in FIG. 5, the semiconductor 2 is laminated on the incident surface side of the collecting electrode of the active matrix substrate 1, and the common electrode 3 is formed in a planar shape on the incident side of the semiconductor 2 and laminated. In this state, a frame 6 surrounding the semiconductor 2 from its periphery is attached on the active matrix substrate 1 as shown in FIG. As described above, the frame 6 is provided with a step 6C as shown in FIGS. 14 (a) to 14 (c). The step 6C may be provided after the frame 6 is mounted on the active matrix substrate 1, or the frame 6 may be mounted on the active matrix substrate 1 after being provided in advance. This step T2 corresponds to the frame attaching step (C).

(Step T3) Installation of Insulating Sheet Of the ribbon-like metal plate 4C (see FIGS. 12, 16, and 17), as shown in FIG. 15, the ribbon-like metal plate outside the connection location with the common electrode 3 Insulating sheet 8 below 4C and below the portion where cable 4A (see FIGS. 12, 16, and 17) does not have an insulator to cover and conductor 4 (core wire 4a) of cable 4A is exposed Install ´. Specifically, the insulating sheet 8 ′ is installed along the step 6C of the frame 6 attached in Step T3. In addition, about the installation place of insulating sheet 8 ', although the connection location of the metal plate 4C and the common electrode 3 was included in FIG.16 (b) and FIG.17 (b), the metal plate 4C and the common electrode 3 are included. You may include a connection location. In other words, the insulating sheet 8 ′ may be installed below the metal plate 4 </ b> C at the connection location with the common electrode 3. Of the metal plates 4 </ b> C, the metal plate 4 </ b> C outside the connection location with at least the common electrode 3. If insulating sheet 8 'is installed in the lower side, it will not be specifically limited. This step T3 corresponds to the installation step (E ′).

(Step T4) Installation of Cable / Metal Plate As shown in FIG. 16, the cable 4A and the core wire 4a are installed on the insulating sheet 8 ′ installed in step T3, and the ribbon-shaped metal plate 4C is installed. The metal plate 4C and the common electrode 3 are connected by bonding with a conductive paste interposed therebetween, and the core wire 4a is inserted under the metal plate 4C to be connected through the conductive paste. Since the upper cover glass 5 (see FIG. 17) is not installed at the time of step T4, the cable 4A and the metal plate 4C can be easily installed from above. In addition, at the time before step T4, the metal plate 4C and the core wire 4a of the cable 4A are connected by soldering in another place in advance, and the connected metal plate 4C and the core wire 4a of the cable 4A are insulated. The metal plate 4C and the common electrode 3 may be connected after being installed on the sheet 8 ′. This step T4 corresponds to the first connection step (A) and corresponds to the second connection step (B).

(Step T5) Installation of Upper Cover Glass After the cable 4A and the metal plate 4C are installed in Step T4, the upper cover glass 5 is installed on the upper portion of the frame 6 as shown in FIG.

(Step T6) Resin Encapsulation A liquid room temperature curable resin composition is injected and cured between the active matrix substrate 1 and the upper cover glass 5, so that the cured room temperature curable resin composition becomes a resin 7. The upper cover glass 5 is fixedly formed by a resin 7 made of a curable synthetic resin. By performing a series of steps T1 to T6, an FPD as shown in FIG. 12 is completed.

According to the flat panel X-ray detector (FPD) and the manufacturing method thereof according to the second embodiment described above, the bias voltage supply cable 4A is connected to the common electrode for applying the bias voltage as in the first embodiment. 3 is connected directly to the common electrode 3 and the conductor (ribbon-shaped metal plate 4C in the present embodiment 2), and the conductor (metal plate 4C) and the core wire 4a of the cable 4A are connected to a portion other than the semiconductor 2 By connecting these, the cable 4A and the common electrode 3 are indirectly connected via a conductor (metal plate 4C). Since the conductor (metal plate 4C) is formed thinner than the cable 4A in the thickness direction, the conductor (metal plate 4C) is thinner than the cable 4A in the thickness direction and is connected to the common electrode 3, and the connection work is performed. It is easy to avoid the occurrence of damage and stress on the semiconductor 2 and the common electrode 3.

Similar to the first embodiment described above, in the FPD according to the second embodiment, it is preferable that at least the connection portion between the common electrode 3 and the conductor (ribbon-shaped metal plate 4C in the second embodiment) and the cable 4A be sealed with resin. Stop. By sealing with the resin in this way, the connection portion between the common electrode 3 and the conductor (metal plate 4C) and the cable 4A is stably installed, the mechanical strength of the entire FPD is increased, and the vicinity of the common electrode 3 is further increased. It is possible to prevent the occurrence of creeping discharge and corona discharge.

Similar to the first embodiment described above, in the second embodiment, the semiconductor 2 is placed on the active matrix substrate 1 on which a circuit for accumulating and reading electric charges (the electric circuit 12 for accumulation / readout in the second embodiment) is formed. A frame 6 surrounding from the periphery is attached. Further, in the case of the second embodiment, the conductor (the ribbon-like metal plate 4C in the second embodiment) and the core wire of the cable 4A at the position of the structure composed of the frame 6 (the step 6C of the frame 6 in the second embodiment). 4a is connected. In the case of the second embodiment, similarly to the first embodiment described above, it is useful when the space between the structure (frame 6) and the semiconductor 2 is small.

Similar to the first embodiment described above, in the second embodiment, among the conductors (ribbon-like metal plate 4C in the second embodiment), at least the conductor (metal plate 4C) outside the connection portion with the common electrode 3 is used. It has a structure in which an insulator (insulating sheet 8 ′ in the present embodiment 2) is installed on the lower side. Discharging can be prevented by installing an insulator (insulating sheet 8 ').

In particular, in the case of the second embodiment, in step T3, among the conductors (ribbon-like metal plate 4C in the second embodiment), at least the conductor (metal plate 4C) outside the connection portion with the common electrode 3 is used. An insulator (insulating sheet 8 'in the present embodiment 2) is activated on the lower side and below the portion where there is no insulator covering the cable 4A and the conductive wire (core wire 4a) of the cable 4A is exposed. It is installed on the matrix substrate 1. Discharging can be prevented by installing an insulator (insulating sheet 8 ').

Next, Embodiment 3 of the present invention will be described with reference to the drawings. FIG. 18 is a schematic plan view of a direct conversion type flat panel X-ray detector (FPD) according to the third embodiment, and FIG. 18B is a cross-sectional view taken along line AA in FIG. FIG. 18C is a cross-sectional view taken along the line BB in FIG. The parts common to the above-described first and second embodiments are denoted by the same reference numerals, description thereof is omitted, and illustration is omitted. Further, similarly to FIG. 1A, the illustration of the upper cover glass is omitted in FIG.

In the FPDs according to the first and second embodiments described above, as shown in FIGS. 1 and 12, the portion of the structure including the frame 6 (the groove 6A of the frame 6 in the first embodiment, the step 6C of the frame 6 in the second embodiment). ), The conductor (single wire 4A in Example 1, ribbon-like metal plate 4C in Example 2) and the core wire 4a of the cable 4A are connected. As shown in FIG. The conductor and the core wire 4a of the cable 4A are connected to each other inside the structure composed of 6 and at a place other than the semiconductor 2. The same single wire 4B as in the first embodiment is adopted as the conductor.

Specifically, the relay pedestal S is installed between the frame 6 and the semiconductor 2. The same insulating sheet 8 ′ as that of the second embodiment is installed on the relay pedestal S, the cable 4A and the core wire 4a are installed on the insulating sheet 8 ′, and the single wire 4B is installed. Instead of the insulating sheet 8 ′, the insulating

sheets

8 and 9 of Example 1 may be installed, and the cable 4A and the single wire 4B may be installed on each of them. The relay base S is insulative, and a hard resin material (high hardness after curing) such as an epoxy resin, a polyurethane resin, or an acrylic resin is used.

In the case of the third embodiment, it is useful when there is a space between the structure composed of the frame 6 and the semiconductor 2 and there is room in the space. Furthermore, in the case of the third embodiment, since it is not necessary to connect the conductor (single wire 4B in the third embodiment) and the cable 4A at the place of the structure, a simpler structure can be obtained. In the third embodiment, the same single wire 4B as that of the first embodiment is employed as the conductor, but the same ribbon-like metal plate 4C as that of the second embodiment may be employed.

The present invention is not limited to the above embodiment, and can be modified as follows.

(1) In each of the above-described embodiments, the radiation detector typified by the flat panel X-ray detector is a two-dimensional array type. However, in the radiation detector of the present invention, the collection electrode is a one-dimensional matrix. A one-dimensional array type formed by an array may be used, or a non-array type having only one electrode for extracting a radiation detection signal may be used.

(2) In each of the above-described embodiments, the X-ray detector is described as an example of the radiation detector. However, the radiation detector (for example, a gamma ray detector) that detects radiation other than the X-ray (for example, gamma ray) is also described. Applicable.

(3) In each of the above-described embodiments, the common electrode 3 is formed on the inner side of the semiconductor 2 in order to prevent the creeping discharge. However, when the creeping discharge is not considered, the edge of the common electrode 3 and the semiconductor 2 may be aligned with each other, or the common electrode 3 may be formed outside the semiconductor 2.

(4) In each of the above-described examples, at least the common electrode 3, the conductor (single wire 4B in Examples 1 and 3) and the cable 4A are sealed with resin, but the applied voltage is low, etc. When creeping discharge is not considered, it is not always necessary to seal with resin.

(5) In each of the above-described examples, an insulator (insulating

sheets

8 and 9 in Example 1 and insulating sheet 8 'in Examples 2 and 3) was installed to prevent discharge, but no discharge occurred, or In the case where discharge is not considered, it is not always necessary to install an insulator.

(6) In the first and third embodiments described above, the single wire 4B is used as the conductor, but the conductor is not necessarily limited to a single wire. A twisted wire such as a cable core wire may be used as the conductor.

(7) The order of the first connection step (A) for connecting the conductor and the common electrode and the second connection step (B) for connecting the conductor and the cable at a place other than the semiconductor are not particularly limited. The second connection step (B) may be performed after the first connection step (A), and conversely, the first connection step (A) may be performed after the second connection step (B). Then, the first connection step (A) and the second connection step (B) may be performed in parallel.

(8) In each of the above-described embodiments, a frame surrounding the semiconductor from its periphery is attached on the substrate (active matrix substrate 1) on which a circuit for accumulating and reading out charges is formed. A frame may be attached on top.

(9) The relay pedestal S shown in Example 3 is not necessarily limited to resin as long as it has insulating properties, and for example, glass or ceramics may be used.

(10) In each embodiment described above, the single wire 4B and the common electrode 3 are connected via the conductive paste, but the connection mode between the single wire 4B and the common electrode 3 is not particularly limited. For example, as shown in the cross-sectional view of FIG. 19A, a base S made of a hard resin material (high hardness after curing) such as an epoxy resin, a polyurethane resin, an acrylic resin (the relay base S described in the third embodiment). Is formed on the incident surface of the semiconductor 2 outside the radiation detection effective area SA, the common electrode 3 is formed so as to cover at least a part of the pedestal S, and the single wire 4B is included in the incident surface of the common electrode 3 You may form so that it may be connected to the location located in the base S. Further, for example, as shown in the enlarged plan view of FIG. 19 (b), a conductive paste in which an oval copper plate 4D and a single wire 4B are connected in advance by solder or the like as a conductive plate material formed in a planar shape. You may connect to the common electrode 3 via (for example, Ni paste). By connecting in this way, a planar copper plate 4D is interposed, and even if a conductive paste having a high resistance value is used, the connection resistance can be lowered, the same as when using a silver paste. For example, the effect of expanding the selection range of the conductive paste can be achieved. Note that by using a Ni paste having a higher resistance value than that of the silver paste, it is possible to avoid a through discharge of the film due to diffusion into the semiconductor 2 due to the use of silver.

Claims

A radiation detector that detects radiation, a radiation-sensitive semiconductor that generates a charge upon incidence of radiation, a common electrode for applying a bias voltage formed in a planar shape on the incident side of the semiconductor, and a bias voltage A power supply cable and a conductor formed thinner in the thickness direction than the cable, connecting the common electrode and the conductor, and connecting the conductor and the cable at a place other than the semiconductor Characteristic radiation detector.
2. The radiation detector according to claim 1, wherein at least a connection portion between the common electrode, the conductor and the cable is sealed with a resin.
3. The radiation detector according to claim 1, further comprising a structure surrounding the semiconductor from the periphery thereof, wherein the conductor and the cable are connected at a position of the structure. 4. .
3. The radiation detector according to claim 1, further comprising a structure surrounding the semiconductor from the periphery thereof, wherein the conductor and the cable are disposed inside the structure and at a place other than the semiconductor. A radiation detector characterized by being connected.
5. The radiation detector according to claim 1, further comprising: a structure in which an insulator is installed on a lower side of a conductor outside the connection portion with at least the common electrode among the conductors. Characteristic radiation detector.
A method of manufacturing a radiation detector for detecting radiation, comprising: (A) a conductor formed thinner in a thickness direction than a cable for supplying a bias voltage; and a radiation-sensitive semiconductor that generates a charge upon incidence of radiation. A first connection step of connecting a common electrode for bias voltage application formed in a plane on the incident side; and (B) a second connection step of connecting the conductor and the cable at a place other than the semiconductor. A method for manufacturing a radiation detector.
7. The method of manufacturing a radiation detector according to claim 6, further comprising: (C) a frame attaching step of attaching a frame surrounding the semiconductor from its periphery on a substrate on which a circuit for accumulating and reading out the electric charge is formed. A method of manufacturing a radiation detector.
8. The method of manufacturing a radiation detector according to claim 7, wherein, in the second connection step of (B), the conductor and the cable at a place of a structure including a frame attached in the frame attachment step of (C). And a method of manufacturing a radiation detector.
9. The method of manufacturing a radiation detector according to claim 8, wherein (D) an insulator is provided on the substrate below a portion where there is no insulator covering the cable and the conductor of the cable is exposed. A first installation step; and (E) a second installation step of installing an insulator on the lower side of the conductor outside at least a connection location with the common electrode among the conductors, and the frame of (C) In the attaching step, the frame is attached onto the substrate together with the insulator installed in the first installation step of (D), and in the second installation step of (E), the frame attachment step of (C) A method for manufacturing a radiation detector, comprising: installing the insulator so as to fit into a groove portion of an attached frame and to be connected to a connection portion between the conductor and the cable.
In the manufacturing method of the radiation detector according to claim 8, (E ') Among the conductors, there is no insulator covering at least the lower side of the conductor outside the connection portion with the common electrode and the cable. A method of manufacturing a radiation detector, comprising: an installation step of installing an insulator below a portion where a cable conductor is exposed.
In the manufacturing method of the radiation detector of Claim 7, It is an inside of the structure consisting of the frame attached in the frame attachment process of said (C) in the said 2nd connection process of (B), and said A method of manufacturing a radiation detector, comprising connecting the conductor and the cable at a place other than a semiconductor.