JP2002237583A - Active matrix substrate and electromagnetic wave detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a semiconductor, for example, which is formed on an active matrix substrate from peeling. SOLUTION: A plurality of electrode wirings arranged in lattice form, an active element disposed for each lattice of the electrode wirings, a layer insulation film 31 provided to an electrode wiring and the upper layer of an active element and a plurality of charge collection electrode 24 formed on the layer insulation film 31 are provided on an insulation substrate 21. The layer insulation film 31 is disposed to cover a pixel arrangement region 14, where an electrode wiring is arranged in lattice form at least in a part of its peripheral region 15. An irregular part 17, formed of at least one of a recessed part and a projection part, is formed in at least a part of an upper surface of the layer insulation film 31 of the peripheral region 15. A semiconductor, for example, which is formed on an active matrix substrate, is prevented from peeling by the irregular part 17.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to radiation such as X-rays,
The present invention relates to an electromagnetic wave detector for detecting electromagnetic waves such as visible light or infrared light, and an active matrix substrate.

[0002]

2. Description of the Related Art Conventionally, a semiconductor film which generates an electric charge (electron-hole pair) by sensing an electromagnetic wave such as an X-ray, that is, a semiconductor film having electromagnetic wave conductivity, a pixel electrode (a charge collecting electrode), and the like. 2. Description of the Related Art A two-dimensional electromagnetic wave detector in which a semiconductor sensor is arranged two-dimensionally and a switching element is provided for each pixel electrode is known. In this electromagnetic wave detector, the switching elements are sequentially turned on for each row, and the charge is read for each column.

[0003] For example, the literature "DLLee, et al.," A New
Digital Detector for ProjectionRadiografy ”, SPIE, 2
432, pp. 237-249, 1995, describes a specific structure and principle of a two-dimensional image detector corresponding to the electromagnetic wave detector. The principle of the two-dimensional image detector will be described with reference to FIG.

A single bias electrode 10 is provided on the upper layer of the semiconductor film 101 made of Se having electromagnetic wave conductivity.
2 and a plurality of charge collecting electrodes 103 are formed in a lower layer. These charge collecting electrodes 103 are connected to a charge storage capacitor (Cs) 104 and a TFT element (active element) 105, respectively. The semiconductor film 1
01 and the bias electrode 102, and the semiconductor film 10
A dielectric layer 106, 107 is provided between the first electrode 1 and the charge collecting electrode 103 as a charge blocking layer, as needed. Reference numeral 108 denotes an insulating substrate, and the bias electrode 10
2 is connected to a high voltage power supply 109.

In such a two-dimensional image detector, when electromagnetic waves such as X-rays enter, charges (electron-hole pairs) are generated in the semiconductor film 101. At this time, the semiconductor film 10
1 and the charge storage capacitor 104 are electrically connected in series. Therefore, the bias electrode 102
, A charge (electron-hole pair) generated in the semiconductor film 101 moves to the + electrode side and the − electrode side, respectively. As a result, the charge is stored in the charge storage capacitor 104. It is a mechanism that works.

The charge stored in the charge storage capacitor 104 is
When the TFT element 105 is turned on, it can be taken out. As described above, in the two-dimensional image detector, the charge collection electrode 103, the charge storage capacitor 104, and the TFT element 105 are two-dimensionally arranged, and the charges are read out line-sequentially, whereby the two-dimensional electromagnetic wave to be detected is detected. Information can be obtained.

Generally, a semiconductor film 1 having electromagnetic wave conductivity
01 is Se, CdTe, CdZnTe, PbI
₂ , HgI ₂ , SiGe, Si, etc. are used. Among them, the Se film (especially an amorphous a-Se film) has a low dark current (leak current) characteristic and can be formed at a low temperature by a vacuum deposition method at a low temperature. It is widely used for an electromagnetic wave detector (in particular, an X-ray detector) having a structure in which the semiconductor film 101 is formed directly on the semiconductor film 110 (see FIG. 9).

[0008]

By the way, the active matrix substrate 110 used for the above-mentioned electromagnetic wave detector is:
Usually, a glass substrate is used as the insulating substrate 108, and a metal film (such as Al or Ta), a semiconductor film (such as a-Si or p-Si), and an insulating film (such as SiNx or SiOx) are formed thereon to form a predetermined shape. By patterning, element members such as electric wiring and the TFT element 105 are formed.

However, for example, in the case of an electromagnetic wave detector in which an a-Se film is formed as the semiconductor film 101 on an active matrix substrate 110 using a glass substrate as an insulating substrate 108, the coefficient of thermal expansion of the glass substrate is 3 to 8 (× 1
0 ⁻⁶ / ° C.) and the coefficient of thermal expansion of the Se film 30 to 50 (× 10 ^−6).
/.Degree. C.) of about one order of magnitude, so that the a-Se film tends to peel off with a change in environmental temperature.

The a-Se film is formed on the insulating substrate 108.
However, there is a problem that it is easy to be peeled off even when an external stress such as bending is applied. In particular, this peeling (film peeling) phenomenon is likely to occur from the outer end of the a-Se film. Therefore, when the screen size of the electromagnetic wave detector increases, the distance between the a-Se film and the insulating substrate 108 increases. Is particularly remarkable due to the difference in thermal expansion between the insulating substrates 108 and the warpage of the insulating substrate 108.

When the a-Se film is peeled off as described above, for example, charges generated in the a-Se film by X-ray irradiation cannot reach the charge collecting electrode 103 of the TFT element 105, and Cannot be detected. Further, when the a-Se film peels off from the outer end, the peeling easily proceeds to the pixel array region, and the damage is increased.

Accordingly, an object of the present invention is to prevent the semiconductor film formed on the active matrix substrate from being peeled off, for example. It is another object of the present invention to provide an active matrix substrate and an electromagnetic wave detector capable of preventing a semiconductor film formed on an active matrix substrate, for example, from being peeled off from an outer end.

[0013]

In order to solve the above-mentioned problems, an active matrix substrate according to the present invention comprises a plurality of electrode wirings arranged in a grid on an insulating substrate; An active matrix substrate comprising: an active element disposed on the substrate; an interlayer insulating layer provided on the electrode wiring and the active element; and a plurality of pixel electrodes formed on the interlayer insulating layer.
The interlayer insulating layer is disposed so as to cover a pixel array region in which the electrode wirings are arranged in a grid and at least a part of a peripheral region surrounding the pixel array region, and is disposed in the peripheral region. An uneven portion composed of at least one of a concave portion and a convex portion is formed on at least a part of the upper surface of the interlayer insulating layer.

According to the above structure, the interlayer insulating layer of the active matrix substrate is disposed so as to cover the pixel array region and at least a part of the peripheral region, and is provided on the upper surface of the interlayer insulating layer disposed in the peripheral region. At least a part is formed with a concavo-convex portion composed of at least one of a concave portion and a convex portion. Such an active matrix substrate is used by further laminating another layer on its upper surface. For example, when used as an electromagnetic wave detector, a semiconductor layer is laminated on its surface. In this case, when the semiconductor layer is stacked on the uneven portion of the interlayer insulating layer, the semiconductor layer is joined to the interlayer insulating layer in the peripheral region in a state where the semiconductor layer is unevenly fitted.

Therefore, the semiconductor layer is bonded to the interlayer insulating layer over a substantially large area in the peripheral region, that is, at the outer end of the semiconductor layer, and an anchor effect is generated at the bonded portion. As a result, in the state where the semiconductor layer is laminated on the active matrix substrate, when there is a large difference in the thermal expansion coefficient between the semiconductor layer and the insulating substrate of the active matrix substrate, or when an external force that bends the active matrix substrate is applied. Even when the semiconductor layer is added, separation of the semiconductor layer from the active matrix substrate can be prevented.

Further, when the semiconductor layer is separated from the active matrix substrate due to the above reasons, the separation usually occurs from the outer end of the semiconductor layer. Therefore, with the configuration in which the uneven portion is formed in the peripheral region of the interlayer insulating layer of the active matrix substrate, peeling of the semiconductor layer can be more reliably prevented.

In the above active matrix substrate, the interlayer insulating layer may be made of a photosensitive organic material.

According to the above configuration, the interlayer insulating layer can be easily formed to a thickness of, for example, 1 to 5 μm by, for example, a spin coating method, and the interlayer insulating layer itself has photosensitivity. An uneven portion can be easily formed in the interlayer insulating layer.

In the above active matrix substrate, an inorganic material having a higher bonding strength with respect to a semiconductor layer laminated on the active matrix substrate such that the surface of the uneven portion is in contact with the uneven portion can be obtained. It may be configured to be covered with a layer.

According to the above configuration, since the interlayer insulating layer and the semiconductor layer laminated on the uneven portion of the interlayer insulating layer are incompatible with each other in material, sufficient bonding strength between the two at the uneven portion is obtained. Even if not obtained, as described above, the surface of the uneven portion is covered with an inorganic layer capable of obtaining a higher bonding strength than the surface of the uneven portion with respect to the semiconductor layer laminated thereon. Therefore, a desired bonding strength can be obtained in the uneven portion.

In the above active matrix substrate, the inorganic layer may be made of the same material as the pixel electrode.

According to the above arrangement, the inorganic layer can be formed simultaneously in the step of forming the pixel electrode. Therefore, while suppressing the increase in the number of steps, forming an inorganic layer on the uneven portion, that is, preventing a decrease in bonding strength in the uneven portion due to incompatibility of the material compatibility between the interlayer insulating layer and the semiconductor layer, and The joining strength can be obtained.

In the above active matrix substrate, the uneven portion has a structure formed in the interlayer insulating layer in a region in contact with the insulating substrate and has a structure penetrating the interlayer insulating layer. Between the insulating substrate and the semiconductor layer laminated on the active matrix substrate so as to be in contact with the concave and convex portions, as a configuration in which an inorganic layer capable of obtaining a higher bonding strength than the surface of the insulating substrate is formed Is also good.

According to the above configuration, even when a glass substrate having a mirror-finished surface is used as the insulating substrate, the unevenness of the semiconductor layer laminated on the uneven portion of the interlayer insulating layer can be improved. The portion reaching the lower surface side of the interlayer insulating layer via the through structure of the portion contacts the surface of the inorganic layer, not the surface of the mirror-finished glass substrate. In this case, since the inorganic layer can obtain a higher bonding strength with respect to the semiconductor layer than the surface of the insulating substrate, the semiconductor layer can obtain a desired connection strength at the concave and convex portions.

In the above active matrix substrate, the uneven portion may be formed at a position that does not overlap with the electrode wiring in the direction of lamination of the interlayer insulating layer with respect to the electrode wiring.

According to the above configuration, for example, when a semiconductor layer is laminated on the active matrix substrate,
The distance between the electrode wiring and the semiconductor layer can be reliably increased by the thickness of the interlayer insulating layer. Thus, the capacitance generated between the electrode wiring and the semiconductor layer can be reduced, and unnecessary electrical coupling between the two can be reduced.
As a result, for example, it is possible to suppress a situation in which noise generated in the semiconductor layer is mixed into the electrode wiring and the S / N of the active matrix substrate is reduced.

[0027] An electromagnetic wave detector according to the present invention includes any one of the above-described active matrix substrates, and a semiconductor having electromagnetic wave conductivity so as to cover the pixel array region and at least a part of the peripheral region on the active matrix substrate. A layer may be formed, and the semiconductor layer may be stacked on the uneven portion in the peripheral region.

According to the above configuration, it is possible to provide a highly reliable electromagnetic wave detector in which peeling of the semiconductor layer from the active matrix substrate hardly occurs.

The above-mentioned electromagnetic wave detector may be configured such that a portion of the semiconductor layer on the concave-convex portion is formed such that its thickness becomes gradually thinner toward the outer side of the active matrix substrate.

According to the above configuration, peeling of the semiconductor layer from the outer end of the active matrix substrate can be prevented more reliably.

According to the electromagnetic wave detector of the present invention, there is provided a pixel array region provided with a plurality of electrode wirings arranged in a grid and active elements arranged for each grid of these electrode wirings, An active matrix substrate having a peripheral region surrounding the active region, and a semiconductor layer having electromagnetic conductivity formed on a surface of the active matrix substrate so as to cover the pixel array region and at least a part of the peripheral region. The electromagnetic wave detector is characterized in that an uneven portion composed of at least one of a concave portion and a convex portion is formed on a surface of at least a part of the peripheral region of the active matrix substrate which is in contact with the semiconductor layer.

According to the above configuration, since at least one of the concave and convex portions is formed on the surface of at least a part of the peripheral region of the active matrix substrate which is in contact with the semiconductor layer, the semiconductor is formed. The layer is bonded to the active matrix substrate in the peripheral region in a state where the layer is unevenly fitted.

Therefore, the semiconductor layer is joined to the active matrix substrate over a substantially large area in the peripheral region of the active matrix substrate, that is, at the outer end of the semiconductor layer, and an anchor effect is generated at the joint. As a result, even when there is a large difference in the coefficient of thermal expansion between the semiconductor layer and the active matrix substrate, or when an external force that bends the active matrix substrate is applied, the semiconductor layer from the active matrix substrate can be removed. Peeling can be prevented.

When the semiconductor layer is separated from the active matrix substrate due to the above reasons, the separation usually occurs from the outer end of the semiconductor layer. Therefore, with the configuration in which the uneven portion is formed in the peripheral region of the active matrix substrate, peeling of the semiconductor layer can be more reliably prevented.

The electromagnetic wave detector according to the present invention is provided on an insulating substrate.
Electromagnetic wave detection in which a plurality of electrode wirings arranged in a grid and active elements, interlayer insulating layers, a plurality of pixel electrodes, and semiconductor layers having electromagnetic wave conductivity, which are arranged in each grid of these electrode wirings, are sequentially laminated. The device is characterized in that at least a part of a region of the interlayer insulating layer which is in contact with the semiconductor layer is formed with an uneven portion formed of at least one of a concave portion and a convex portion.

According to the above structure, since at least a part of a region of the interlayer insulating layer which is in contact with the semiconductor layer is formed with a concave and convex portion formed of at least one of a concave portion and a convex portion, the semiconductor layer has The part is joined to the interlayer insulating layer in a state of being fitted with the concave and convex portions. In this case, the uneven portions are provided, for example, at positions between adjacent pixels in the interlayer insulating layer.

Therefore, the semiconductor layer is bonded to the interlayer insulating layer over a substantially large area at the uneven portion, and an anchor effect is generated at the bonded portion. As a result, when there is a large difference in the coefficient of thermal expansion between the semiconductor layer and the insulating substrate,
Even when an external force that bends the electromagnetic wave detector is applied, peeling of the semiconductor layer from the insulating substrate can be prevented.

[0038] The above-mentioned electromagnetic wave detector may have a configuration in which the surface of the concave-convex portion is covered with an inorganic layer that provides a higher bonding strength to the semiconductor layer than the surface of the concave-convex portion.

According to the above configuration, since the interlayer insulating layer and the semiconductor layer laminated on the uneven portion of the interlayer insulating layer are incompatible in material, sufficient bonding strength between the two at the uneven portion is obtained. Even if not obtained, as described above, the surface of the uneven portion is covered with an inorganic layer capable of obtaining a higher bonding strength than the surface of the uneven portion with respect to the semiconductor layer laminated thereon. Therefore, a desired bonding strength can be obtained in the uneven portion.

In the above electromagnetic wave detector, the surface of the uneven portion is covered with an inorganic layer having a higher bonding strength with respect to the semiconductor layer than the surface of the uneven portion, and the inorganic layer is in contact with the pixel electrode. It is good also as composition consisting of the same material.

According to the above arrangement, the inorganic layer can be formed simultaneously in the pixel electrode forming step. Therefore, while suppressing the increase in the number of steps, forming an inorganic layer on the uneven portion, that is, preventing a decrease in bonding strength in the uneven portion due to incompatibility of the material compatibility between the interlayer insulating layer and the semiconductor layer, and The joining strength can be obtained.

In the above-mentioned electromagnetic wave detector, the uneven portion is formed in the interlayer insulating layer in a region in contact with the insulating substrate and has a structure penetrating the interlayer insulating layer. An inorganic layer may be formed between the insulating layer and the insulating layer so that the semiconductor layer has higher bonding strength than the surface of the insulating substrate.

According to the above configuration, even when a glass substrate having a mirror-finished surface is used as the insulating substrate, the unevenness of the semiconductor layer laminated on the uneven portion of the interlayer insulating layer can be improved. The portion reaching the lower surface side of the interlayer insulating layer via the through structure of the portion contacts the surface of the inorganic layer, not the surface of the mirror-finished glass substrate. In this case, since the inorganic layer can obtain a higher bonding strength with respect to the semiconductor layer than the surface of the insulating substrate, the semiconductor layer can obtain a desired connection strength at the concave and convex portions.

[0044]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment An embodiment of the present invention will be described below with reference to FIGS. In the electromagnetic wave detector and the active matrix substrate, the pixel array area is an area in which electrode wirings are arranged in a grid pattern. This area is an active area in which active elements and pixel electrodes are arranged in a two-dimensional manner. It has become. In particular, the electromagnetic wave detector corresponds to the imaging region.

As shown in FIGS. 2A and 2B, the electromagnetic wave detector according to the present embodiment includes an active matrix substrate 11, a semiconductor film (semiconductor layer) 1 as main components.
2 and a bias electrode 13. The active matrix substrate 11 has an active matrix array in the pixel array region 14. The semiconductor film 12 generates an electric charge in response to an electromagnetic wave to be detected. The bias electrode 13 is for applying a bias voltage to the semiconductor film 12.

As shown in FIG. 3, the active matrix substrate 11 has an insulating substrate 21 made of glass or ceramics, on which the active matrix array is formed. This active matrix array includes, for example, a TFT element (active element) 22 using a-Si or p-Si, a charge storage capacitor (Cs) 23, a charge collection electrode (pixel electrode) 24, and a gate electrode forming a bus line. 25 and data electrodes 29 are arranged in an XY matrix. The active element may be, for example, an MIM element or a diode element in addition to the TFT element 22.

In the XY matrix, the size of one pixel corresponding to a unit cell is 0.1 × 0.1 mm ^{2 to} 0.3 ×
0.3 mm ² , and this one pixel is 500 × 500
Generally, a matrix of about 3000 × 3000 pixels is arranged in a matrix.

FIG. 3 is a longitudinal sectional view showing the structure of the electromagnetic wave detector per pixel. The structure is as follows in more detail. Active matrix substrate 1
In No. 1, for example, on an insulating substrate 21 made of a glass substrate,
Gate electrode 25, charge storage capacitor (Cs) electrode 26, charge storage capacitor 23, gate insulating film 27, connection electrode (drain electrode) 28, data electrode (source electrode) 29, TFT element 22, insulating protective film 30, interlayer insulation Film (interlayer insulating layer) 3
1, a charge collection electrode (pixel electrode) 24, and the like. The TFT element 22 has a channel layer 32 and a contact layer 33. In addition, a contact hole 34 is formed in the interlayer insulating film 31, and the charge collection electrode 24 is connected to the connection electrode 28 by the contact hole 34.
Is connected to In the electromagnetic wave detector, the semiconductor film 12 is formed on such an active matrix substrate 11.
And a bias electrode 13 are formed.

The above-mentioned electromagnetic wave detector can be manufactured as follows. As the glass substrate as the insulating substrate 21, for example, a non-alkali glass substrate (for example, # 1737 manufactured by Corning Incorporated) can be used. Then, a gate electrode 25 and a charge storage capacitor electrode 26 made of a metal film such as Ta or Al are formed on the glass substrate 1. These are formed by forming the above-mentioned metal film on a glass substrate to a thickness of about 3000 ° by sputter deposition and then patterning it into a desired shape.

Next, a gate insulating film 27 made of SiNx, SiOx, or the like is formed to a thickness of about 3500 ° by CVD on almost the entire upper surface of the glass substrate so as to cover the gate electrode 25 and the charge storage capacitor electrode 26. I do. The gate insulating film 27 also has a function as a dielectric in the charge storage capacitor 23. The gate insulating film 27 is not limited to SiNx or SiOx, but may be an anodic oxide film obtained by anodizing the gate electrode 25 and the charge storage capacitor electrode 26.

Next, a channel layer (i-layer) 32 serving as a channel portion of the TFT element (TFT) 22 and a data electrode 29 and a connection electrode (drain electrode) are formed above the gate electrode 25 via a gate insulating film 27. ) A contact layer (n ⁺ layer) 33 for making contact with 28 is formed.
These are made of a-Si, and can be formed by forming a film to have a thickness of about 1000 ° and about 400 ° by the CVD method and then patterning the film into a desired shape.

Next, on the contact layer (n ⁺ layer) 33,
A data electrode 29 and a connection electrode (drain electrode) 28 are formed. The connection electrode 28 also serves as an upper electrode constituting the charge storage capacitor 23. These data electrodes 29
Similarly to the gate insulating film 27 and the charge storage capacitor electrode 26, the connection electrode 28 is formed by forming a metal film such as Ta or Al to a thickness of about 3000 ° by sputter deposition and then patterning it into a desired shape. Form.

Next, the TFT element 22 and the charge storage capacitor 23
The insulating protective film 30 is formed so as to cover almost the entire surface of the insulating substrate (glass substrate) 21 on which the above-described components are formed. This insulating protective film 30 is made of SiNx having a thickness of about 3000 by the CVD method.
Å is formed by forming a film. Note that SiNx is removed in a portion on the connection electrode 28 where the contact hole 34 is formed.

Next, an interlayer insulating film 31 is formed so as to cover substantially the entire surface of the insulating protection film 30. This interlayer insulating film 3
1 is formed by depositing a photosensitive acrylic resin to a thickness of about 3 μm using a coating device such as a spinner. As the photosensitive organic material, a polyimide resin or the like can be used.

Thereafter, the interlayer insulating film 31 is exposed and developed (photolithography) using a photomask having a predetermined light-shielding pattern to form a contact hole 34 for each pixel. In the contact hole 34, a hole is formed which penetrates the interlayer insulating film 31 in the vertical direction, and the lower connection electrode (drain electrode) 28 is exposed.

Next, a conductive film is patterned as the charge collecting electrode 24 on the interlayer insulating film 31 in which the contact hole 34 is formed. The charge collecting electrode 24 is connected to the connection electrode 28 of the TFT element 22 through the contact hole 34.
Is electrically connected to

The charge collecting electrode 24 is, for example, an ITO film (indium tin oxide film), an IZO film (indium zinc oxide film), an Al film, an A film having a thickness of 0.1 to 0.2 μm.
1 alloy film (for example, Al-Nd, Al-Zr alloy, etc.),
A laminated film of Al and another conductive film (for example, Al / Mo, Al
/ Ti etc.) can be used. In the present application, the Al film, the Al alloy film, and the laminated film of Al and another conductive film are collectively referred to as “a conductive film containing Al as a main component”.

Next, a semiconductor film 12 made of a-Se and having electromagnetic conductivity is formed on the active matrix substrate 11 formed as described above so as to cover the entire pixel array region 14. The semiconductor film 12 has a thickness of about 0.5 to about 0.5 by a vacuum evaporation method in consideration of X-ray absorption efficiency.
The film is formed to have a thickness of 1.5 mm, preferably 1 mm.
Note that, in addition to a-Se, the semiconductor film having electromagnetic wave conductivity includes CdTe, CdZnTe, PbI ₂ , and Hg.
I ₂ , SiGe, Si or the like can be used. However, when an electromagnetic wave detector having a structure in which the semiconductor film 12 is directly formed on the active matrix substrate 11 on which the active matrix array is formed, amorphous Se capable of forming a large area at a low temperature by a vacuum deposition method is used.
A film (a-Se film) is optimal.

Then, a bias electrode 13 made of Au, Al, or the like is formed on substantially the entire surface of the semiconductor film 12 to a thickness of about 2000 ° by a vacuum deposition method, so that FIGS. The electromagnetic wave detector shown in FIG. 3 is obtained. A bias voltage is applied to the uppermost bias electrode 13 from an external high voltage power supply (not shown).

Next, the configuration of the electromagnetic wave detector according to the present embodiment will be described with reference to FIG. FIG. 1 is FIG.
It is sectional drawing in the AA line arrow in (a). However, in FIG. 1, for convenience, the active matrix substrate 11
Omit the TFT element 22 and each electrode wiring constituting
Only the interlayer insulating film 31 and the charge collection electrode (pixel electrode) 24 are shown.

As shown in FIG. 1, the active matrix substrate 11 generally includes a pixel array area 14 (active area, matrix area) in which electrode wirings are arranged in a grid pattern.
It can be broadly divided into other areas, that is, a peripheral area 15 located at a peripheral part of the pixel array area 14.

In the active matrix substrate 11, the interlayer insulating film 31 is formed with a large area from the pixel array region 14 to a part of the peripheral region 15. In the interlayer insulating film 31 in the peripheral region 15, an uneven portion 17 composed of at least one of a concave portion and a convex portion is formed. This uneven part 1
Numeral 7 functions as a junction enhancing portion and is not limited to the entire region of the interlayer insulating film 31 in the peripheral region 15 and may be formed in at least a part of the region. Further, in the electromagnetic wave detector, the pixel array region 14 moves to the peripheral region 15.
The semiconductor film 12 is formed over the region where the uneven portion 17 is formed. That is, the peripheral area 1
In 5, the semiconductor film 12 is formed on the interlayer insulating film 31, and is joined to the uneven portion 17 in a fitted state.

As the above-mentioned uneven portion 17, various dot patterns, stripe patterns, wavy line patterns and the like can be formed at an arbitrary density. Examples of the dot patterns include those shown in FIGS. 4A and 4B, and examples of the dot pattern include those shown in FIGS.
There are the following. Each of the patterns shown in FIGS. 4A to 4C may be either a concave portion or a convex portion.

In each of the patterns such as the dot pattern and the stripe pattern, for example, the depth or height can be about 3 μm, and the width (diameter) can be about 5 to 10 μm.

The concave / convex portion 17 is formed of at least one of a concave portion and a convex portion. The concave / convex portion 17 includes a concave portion, a convex portion, a groove, a hole, a satin finish, and the like. Various structures for forming are included.

When the concavo-convex portion 17 is formed of, for example, a concave portion, the concavo-convex portion 17 can be formed at the same time when the contact hole 34 is formed in the interlayer insulating film 31, for example. In this case, it can be simply formed without adding a new process.

The interlayer insulating film 31 is made of an acrylic resin, and the insulating substrate 21 is made of a glass substrate.
In addition, in the peripheral region 15, the interlayer insulating film 31
When the glass substrate is directly formed on the substrate 1, the bonding strength between the insulating substrate 21 and the glass substrate is low because the surface of the glass substrate is extremely mirror-finished. In this case, even in the peripheral region 15 of the active matrix substrate 11, the pixel array region 1
As in the case of No. 4, SiNx or Si
It is preferable to arrange an inorganic thin film (inorganic layer) made of O ₂ or the like. Specifically, when the gate insulating film 27 and the insulating protective film 30 shown in FIG. 3 are formed, the films are formed on the insulating substrate 21 in the peripheral region 15 at the position where the interlayer insulating film 31 exists (for the interlayer insulating film 31). It is good to form continuously to the lower position).

In the above configuration, in the electromagnetic wave detector,
When electromagnetic waves such as X-rays enter, charges (electron-hole pairs) are generated in the semiconductor film 12. At this time, the semiconductor film 12 and the charge storage capacitor 23 are electrically connected in series. Therefore, when a bias voltage is applied to the bias electrode 13, charges (electron-hole pairs) generated in the semiconductor film 12 move to the + electrode side and the − electrode side, respectively. As a result, charge is stored in the charge storage capacitor 23.

The charge stored in the charge storage capacitor 23 is T
By turning on the FT element 22, the data can be taken out to an external amplifier circuit (not shown) via the data electrode 29. At this time, the charge collection electrode 24 and the charge storage capacitor 23
Since the TFT elements 22 are arranged in an XY matrix as described above, two-dimensional information of an electromagnetic wave to be detected can be obtained by driving the TFT elements 22 in a line-sequential manner to read out electric charges. Becomes possible.

Further, the active matrix substrate 11
The interlayer insulating film 31 in the peripheral region 15 has the uneven portion 17 as described above. Therefore, an electromagnetic wave detector formed by sequentially forming the semiconductor film 12 and the bias electrode 13 on the active matrix substrate 11, that is, the semiconductor film 12 is formed on the uneven portion 17 of the interlayer insulating film 31 in the peripheral region 15. In the arranged electromagnetic wave detector, the bonding area between the semiconductor film 12 and the interlayer insulating film 31 is increased as compared with the electromagnetic wave detector not having the uneven portion 17 and the semiconductor film 12 is The anchoring effect occurs due to the fitted state. Therefore, the bonding strength of the semiconductor film 12 to the active matrix substrate 11 is improved. As a result, when the thermal expansion coefficients of the semiconductor film 12 and the insulating substrate 21 are significantly different, the interlayer insulating film 31 due to the difference in the amount of thermal expansion between the two, that is, peeling of the semiconductor film 12 from the insulating substrate 21 or external force The peeling of the semiconductor film 12 from the insulating substrate 21 due to deformation (warpage) of the electromagnetic wave detector or the like can be prevented.

That is, for example, a glass substrate is
Semiconductor film 1 on active matrix substrate 11
In the case of an electromagnetic wave detector having an a-Se film formed as 2,
Thermal expansion coefficient of glass substrate 3 to 8 (× 10 ^-6 / ° C) and a-
Since the coefficient of thermal expansion of the Se film has a difference of about one digit from the coefficient of thermal expansion of 30 to 50 (× 10 ⁻⁶ / ° C.), the a-Se
The film was easily peeled. In addition, there has been a problem that the a-Se film is easily peeled by a load of a slight external stress such as bending the insulating substrate 21.

Therefore, the uneven portion 17 is formed on the interlayer insulating film 31 as described above, and the semiconductor film 1 is formed on the uneven portion 17.
2 is formed, the bonding area between semiconductor film 12 and interlayer insulating film 31 is increased, and unevenness 17
Can prevent peeling of the semiconductor film 12 from the insulating substrate 21.

The peeling of the semiconductor film 12 from the insulating substrate 21 tends to occur from the outer end of the semiconductor film 12. In order to solve this problem, in the present embodiment, the uneven portion 17 is formed in the peripheral region 15 of the active matrix substrate 11.
Is formed on the interlayer insulating film 31, so that peeling of the semiconductor film 12 particularly from the peripheral portion can be appropriately prevented.

Further, as shown in FIG. 1, the portion of the semiconductor film 12 on the uneven portion 17 is formed so that the thickness thereof becomes gradually smaller toward the outer side of the active matrix substrate 11. Specifically, for example, the shape has a slope such that the thickness gradually decreases. Therefore, peeling of the semiconductor film 12 from the peripheral portion can be more appropriately prevented.

[Second Embodiment] Another embodiment of the present invention will be described below with reference to FIG. The electromagnetic wave detector according to the present embodiment has a configuration shown in FIG. This electromagnetic wave detector is provided in the peripheral region 1 of the active matrix substrate 11.
5, an uneven portion 17 is formed on the interlayer insulating film 31 similarly to the electromagnetic wave detector, and an inorganic film (inorganic layer) 41 is formed on the uneven portion 17.
Other configurations are the same as those of the electromagnetic wave detector.

Although various kinds of thin films can be used as the inorganic film 41, in order to suppress an increase in the number of manufacturing steps of the electromagnetic wave detector (active matrix substrate 11), the same as the charge collecting electrode (pixel electrode) 24 is used. It is preferable to use the above material. Specifically, an ITO film (indium tin oxide film),
IZO film (indium zinc oxide film), Al film, Al alloy film (for example, Al-Nd, Al-Zr alloy, etc.), laminated film of Al and another conductive film (for example, Al / Mo, Al / Ti)
Etc.). In this case, the inorganic film 41 may be formed in the peripheral region 15 at the same time that the charge collecting electrode 24 is patterned.

The inorganic film 41 has the following functions. First
Has a function as a connection strength promoting film between the interlayer insulating film 31 and the semiconductor film 12. That is, the interlayer insulating film 31 and the semiconductor film 12 formed thereon are incompatible with each other in terms of material.
In the case where the bonding strength between the two is not sufficiently improved even when the surface is formed, the desired bonding strength can be obtained by disposing the inorganic film 41 between the two as described above. The inorganic film 41 used in this case has a higher bonding strength with respect to the semiconductor film 12 than the uneven portion 17, that is, the surface of the interlayer insulating film 31.

The second function is a function as a protective film for protecting the uneven portion 17 from a chemical solution in the manufacturing process. That is, after forming the concavo-convex portions 17 and the contact holes 34 in the interlayer insulating film 31, a patterning step of the charge collecting electrode (pixel electrode) 24 is performed by a known photolithography technique or etching technique using a photoresist. At this time, the interlayer insulating film 31 is formed of a photoresist stripper (chemical solution).
Will be exposed to At this time, if the interlayer insulating film 31 is formed of an acrylic resin,
Has a concave-convex portion 17, so that it is more susceptible to damage from a chemical solution than a flat structure without the concave-convex portion 17, and the pattern of the concave-convex portion 17 may be broken. is there. Therefore, if the uneven portion 17 is covered with the inorganic film 41, the uneven portion 17 will not be exposed to the chemical solution in the photoresist stripping step, and the uneven portion 1 will not be exposed.
7 can maintain a good shape.

[Embodiment 3] Still another embodiment of the present invention will be described below with reference to FIGS. The electromagnetic wave detector according to the present embodiment has a configuration in which the above-described uneven portion 17 is provided in the interlayer insulating film 31 in the peripheral region 15 of the active matrix substrate 11 in consideration of a preferable arrangement of the uneven portion 17.

In the electromagnetic wave detector according to the present embodiment, the uneven portions 17 are arranged as shown in FIG. FIG. 2 is a plan view of the vicinity of a peripheral region 15 in the active matrix substrate 11 of the electromagnetic wave detector, and shows a case where the uneven portion 17 is formed of a concave portion. The uneven portion 17 may be formed of a convex portion, or may be formed of a groove portion or another concave or convex pattern as described above.

As shown in FIG. 6, the active matrix substrate 11 of the electromagnetic wave detector has a large number of connection terminals 51 arranged side by side at its edge, and these connection terminals 51 are formed in the peripheral region 15. The electrode wiring 53 formed in a matrix of the pixel array region 14 through the extraction wiring 52
Is connected. Note that the extraction wiring 52 is also an electrode wiring, but is here referred to as an extraction wiring 52 to be distinguished from the electrode wiring 53 formed in the pixel array region 14.

The uneven portion 17 is formed between the lead wirings 52 so as not to overlap with the lead wirings 52. Therefore, the interlayer insulating film 31 exists on the lead wiring (electrode wiring) 52. Accordingly, the electromagnetic wave detector according to the present embodiment can suppress a situation in which noise generated in the semiconductor film 12 is superimposed on the electrode wiring 53, that is, the connection terminal 51.

That is, generally, some charge is generated in the semiconductor film 12 by X-ray irradiation or thermal excitation, and an unnecessary potential caused by the charge may be superimposed as noise on the lower extraction wiring 52. Therefore, the uneven portion 17
Is formed so as not to overlap with the extraction wiring 52 as described above, the distance between the extraction wiring 52 and the semiconductor film 12 can be surely separated by the thickness of the interlayer insulating film 31 (for example, 3 μm). Thereby, the extraction wiring 52 and the semiconductor film 1
2 can be reduced, and the electrical coupling between them can be reduced. As a result, it is possible to suppress a situation in which noise is mixed into the detection signal of the electromagnetic wave detector and the S / N is reduced.

The above active matrix substrate 1
The configuration 1 can be applied not only to the electromagnetic wave detector but also to a liquid crystal display device 61 as shown in FIG. 7, for example. In this liquid crystal display device 61, the active matrix substrate 1
A liquid crystal layer 63 is provided between the substrate 1 and the counter substrate 62, and the liquid crystal layer 63 is sealed between the two by a sealing material 64.

The sealing material 64 is made of a thermosetting resin or an ultraviolet curing resin, and is provided on the uneven portion 17 formed in the peripheral region 15 of the active matrix substrate 11. That is, the end of the sealing material 64 on the side of the active matrix substrate 11 is joined to the active matrix substrate 11 in a state where the sealing member 64 is fitted to the uneven portion 17. With such a configuration, even when a load such as a bending load that peels off the active matrix substrate 11 and the sealing material 64 is applied to the liquid crystal display device 61, both of them are easily pulled. It does not come off. Thereby, the reliability of the liquid crystal display device 61 can be improved.

The electromagnetic wave detector of the above embodiment is not limited to a detector for radiation such as X-rays,
It can be applied to detectors for various electromagnetic waves such as infrared light. Also, the structure of the active matrix substrate 11 and the material of the semiconductor film 12 are not limited to those described in the above embodiment, and various other configurations and various materials can be used as appropriate.

Further, in the above embodiment, the uneven portion 17 is formed in the peripheral region 15 of the active matrix substrate 11.
Is formed on the interlayer insulating film 31, whereby a high peeling preventing function for the semiconductor film 12 can be exhibited. However, irregularities 17
Need not necessarily be formed in the peripheral region 15, and may be formed in the interlayer insulating film 31 between the pixels 55 in the pixel array region 14, for example, as shown in FIG. Even in this case, a higher anti-peeling function for the semiconductor film 12 can be obtained as compared with a case where the uneven portion 17 is not provided.

In the above embodiment, the active matrix substrate 11 included in the electromagnetic wave detector is provided with the uneven portion 17. However, the configuration provided with the uneven portion 17 is not limited to this, and can be applied to the active matrix substrate 11 as a product. That is, the active matrix substrate 1 in this case
1 is a film (layer) whose coefficient of thermal expansion is significantly different from that of the insulating substrate 21, for example, a product on the premise that the semiconductor film 12 is formed on the upper surface, or is easily deformed or easily deformed; It is distributed as a product in which a film (layer) formed thereon is easily peeled off.

[0089]

As described above, the active matrix substrate of the present invention comprises, on an insulating substrate, a plurality of electrode wirings arranged in a grid, and active elements arranged for each grid of these electrode wirings. In an active matrix substrate including an interlayer insulating layer provided on an upper layer of the electrode wiring and the active element, and a plurality of pixel electrodes formed on the interlayer insulating layer, the interlayer insulating layer includes At least a part of an upper surface of the interlayer insulating layer disposed so as to cover a pixel array region arranged in a lattice and at least a part of a peripheral region surrounding the pixel array region, and arranged in the peripheral region In this configuration, an uneven portion composed of at least one of a concave portion and a convex portion is formed.

Such an active matrix substrate is
For example, when used as an electromagnetic wave detector, a semiconductor layer is laminated on its surface. In this case, when the semiconductor layer is stacked on the uneven portion of the interlayer insulating layer, the semiconductor layer is joined to the interlayer insulating layer in the peripheral region in a state where the semiconductor layer is unevenly fitted.

Therefore, the semiconductor layer is joined to the interlayer insulating layer over a substantially large area in the peripheral region, that is, at the outer end of the semiconductor layer, and an anchor effect is generated at the joint. As a result, in the state where the semiconductor layer is laminated on the active matrix substrate, when there is a large difference in the thermal expansion coefficient between the semiconductor layer and the insulating substrate of the active matrix substrate, or when an external force that bends the active matrix substrate is applied. Even when the semiconductor layer is added, separation of the semiconductor layer from the active matrix substrate can be prevented.

When the semiconductor layer is separated from the active matrix substrate due to the above reasons, the separation usually occurs from the outer end of the semiconductor layer. Therefore, with the configuration in which the uneven portion is formed in the peripheral region of the interlayer insulating layer of the active matrix substrate, peeling of the semiconductor layer can be more reliably prevented.

In the above active matrix substrate, the interlayer insulating layer may be made of a photosensitive organic material.

According to the above configuration, the interlayer insulating layer can be easily formed to a thickness of, for example, 1 to 5 μm by, for example, a spin coating method, and the interlayer insulating layer itself has photosensitivity. An uneven portion can be easily formed in the interlayer insulating layer.

The above-mentioned active matrix substrate is an inorganic material having a higher bonding strength with respect to the semiconductor layer laminated on the active matrix substrate so that the surface of the uneven portion is in contact with the uneven portion. It may be configured to be covered with a layer.

According to the above structure, since the interlayer insulating layer and the semiconductor layer laminated on the uneven portion of the interlayer insulating layer are incompatible in material, sufficient bonding strength between the two at the uneven portion is obtained. Even if not obtained, as described above, the surface of the uneven portion is covered with an inorganic layer capable of obtaining a higher bonding strength than the surface of the uneven portion with respect to the semiconductor layer laminated thereon. Therefore, a desired bonding strength can be obtained in the uneven portion.

In the above active matrix substrate, the inorganic layer may be made of the same material as the pixel electrode.

According to the above configuration, the inorganic layer can be formed simultaneously in the pixel electrode forming step. Therefore, while suppressing the increase in the number of steps, forming an inorganic layer on the uneven portion, that is, preventing a decrease in bonding strength in the uneven portion due to incompatibility of the material compatibility between the interlayer insulating layer and the semiconductor layer, and The joining strength can be obtained.

In the above active matrix substrate, the uneven portion is formed in the interlayer insulating layer in a region in contact with the insulating substrate and has a structure penetrating the interlayer insulating layer. Between the insulating substrate and the semiconductor layer laminated on the active matrix substrate so as to be in contact with the concave and convex portions, as a configuration in which an inorganic layer capable of obtaining a higher bonding strength than the surface of the insulating substrate is formed Is also good.

According to the above configuration, even when a glass substrate having a mirror-finished surface is used as the insulating substrate, the unevenness of the semiconductor layer laminated on the uneven portion of the interlayer insulating layer can be improved. The portion reaching the lower surface side of the interlayer insulating layer via the through structure of the portion contacts the surface of the inorganic layer, not the surface of the mirror-finished glass substrate. In this case, since the inorganic layer can obtain a higher bonding strength with respect to the semiconductor layer than the surface of the insulating substrate, the semiconductor layer can obtain a desired connection strength at the concave and convex portions.

The active matrix substrate may have a configuration in which the uneven portion is formed at a position that does not overlap with the electrode wiring in the direction in which the interlayer insulating layer is stacked on the electrode wiring.

According to the above configuration, for example, when a semiconductor layer is laminated on an active matrix substrate,
The distance between the electrode wiring and the semiconductor layer can be reliably increased by the thickness of the interlayer insulating layer. Thus, the capacitance generated between the electrode wiring and the semiconductor layer can be reduced, and unnecessary electrical coupling between the two can be reduced.
As a result, for example, it is possible to suppress a situation in which noise generated in the semiconductor layer is mixed into the electrode wiring and the S / N of the active matrix substrate is reduced.

[0103] An electromagnetic wave detector according to the present invention includes any one of the above-described active matrix substrates, and has a semiconductor having electromagnetic wave conductivity so as to cover the pixel array region and at least a part of the peripheral region on the active matrix substrate. A layer may be formed, and the semiconductor layer may be stacked on the uneven portion in the peripheral region.

According to the above configuration, it is possible to provide a highly reliable electromagnetic wave detector in which peeling of the semiconductor layer from the active matrix substrate hardly occurs.

The above-mentioned electromagnetic wave detector may have a configuration in which a portion of the semiconductor layer on the concave-convex portion is formed such that its thickness becomes gradually smaller toward the outer side of the active matrix substrate.

According to the above configuration, the separation of the semiconductor layer from the outer end of the active matrix substrate can be more reliably prevented.

The electromagnetic wave detector according to the present invention comprises a pixel array region in which a plurality of electrode wirings arranged in a grid and active elements arranged in each grid of the electrode wirings are provided; An active matrix substrate having a peripheral region surrounding the active region, and a semiconductor layer having electromagnetic conductivity formed on a surface of the active matrix substrate so as to cover the pixel array region and at least a part of the peripheral region. The electromagnetic wave detector has a configuration in which at least a part of at least one of a concave part and a convex part is formed on a surface of at least a part of the peripheral region of the active matrix substrate which is in contact with the semiconductor layer.

According to the above arrangement, the semiconductor layer is joined to the active matrix substrate in the peripheral region in a state where the semiconductor layer is unevenly fitted. Therefore, the semiconductor layer is joined to the active matrix substrate over a substantially large area in the peripheral region of the active matrix substrate, that is, at the outer end of the semiconductor layer, and an anchor effect is generated at the joint.
As a result, even when there is a large difference in the coefficient of thermal expansion between the semiconductor layer and the active matrix substrate, or when an external force that bends the active matrix substrate is applied, the semiconductor layer from the active matrix substrate can be removed. Peeling can be prevented.

When the semiconductor layer is separated from the active matrix substrate for the above-described reason, the separation usually occurs from the outer end of the semiconductor layer. Therefore, with the configuration in which the uneven portion is formed in the peripheral region of the active matrix substrate, peeling of the semiconductor layer can be more reliably prevented.

[0110] The electromagnetic wave detector of the present invention is provided on an insulating substrate.
Electromagnetic wave detection in which a plurality of electrode wirings arranged in a grid and active elements, interlayer insulating layers, a plurality of pixel electrodes, and semiconductor layers having electromagnetic wave conductivity, which are arranged in each grid of these electrode wirings, are sequentially laminated. The semiconductor device has a configuration in which at least a part of a region of the interlayer insulating layer that is in contact with the semiconductor layer has an uneven portion formed of at least one of a concave portion and a convex portion.

According to the above configuration, the semiconductor layer is joined to the interlayer insulating layer at the concave and convex portions in a state where the concave and convex are fitted.
In this case, the uneven portions are provided, for example, at positions between adjacent pixels in the interlayer insulating layer.

Therefore, the semiconductor layer is bonded to the interlayer insulating layer over a substantially large area in the uneven portion, and an anchor effect is generated at the bonded portion. As a result, when there is a large difference in the coefficient of thermal expansion between the semiconductor layer and the insulating substrate,
Even when an external force that bends the electromagnetic wave detector is applied, peeling of the semiconductor layer from the insulating substrate can be prevented.

[0113] The above-mentioned electromagnetic wave detector may be configured so that the surface of the uneven portion is covered with an inorganic layer that provides a higher bonding strength to the semiconductor layer than the surface of the uneven portion.

According to the above configuration, since the interlayer insulating layer and the semiconductor layer laminated on the uneven portion of the interlayer insulating layer are incompatible in material, sufficient bonding strength between the two at the uneven portion is obtained. Even if not obtained, as described above, the surface of the uneven portion is covered with an inorganic layer capable of obtaining a higher bonding strength than the surface of the uneven portion with respect to the semiconductor layer laminated thereon. Therefore, a desired bonding strength can be obtained in the uneven portion.

In the above electromagnetic wave detector, the surface of the uneven portion is covered with an inorganic layer having a higher bonding strength to the semiconductor layer than the surface of the uneven portion, and the inorganic layer is in contact with the pixel electrode. It is good also as composition consisting of the same material.

According to the above configuration, the inorganic layer can be formed simultaneously in the step of forming the pixel electrode. Therefore, while suppressing the increase in the number of steps, forming an inorganic layer on the uneven portion, that is, preventing a decrease in bonding strength in the uneven portion due to incompatibility of the material compatibility between the interlayer insulating layer and the semiconductor layer, and The joining strength can be obtained.

In the above electromagnetic wave detector, the uneven portion has a structure formed on the interlayer insulating layer in a region in contact with the insulating substrate and penetrating the interlayer insulating layer. An inorganic layer may be formed between the insulating layer and the insulating layer so that the semiconductor layer has higher bonding strength than the surface of the insulating substrate.

According to the above configuration, even when a glass substrate having a mirror-finished surface is used as the insulating substrate, the unevenness of the semiconductor layer laminated on the uneven portion of the interlayer insulating layer can be improved. The portion reaching the lower surface side of the interlayer insulating layer via the through structure of the portion contacts the surface of the inorganic layer, not the surface of the mirror-finished glass substrate. In this case, since the inorganic layer can obtain a higher bonding strength with respect to the semiconductor layer than the surface of the insulating substrate, the semiconductor layer can obtain a desired connection strength at the concave and convex portions.

[Brief description of the drawings]

FIG. 1 shows a configuration of an electromagnetic wave detector according to an embodiment of the present invention, and is a cross-sectional view taken along line AA in FIG. 2 (a).

FIG. 2A is a plan view showing an electromagnetic wave detector according to an embodiment of the present invention, and FIG. 2B is a schematic longitudinal sectional view of the electromagnetic wave detector.

FIG. 3 is an enlarged longitudinal sectional view showing one pixel portion in the electromagnetic wave detector shown in FIG. 2 (a).

FIG. 4A is a plan view showing an example of a dot pattern serving as an uneven portion shown in FIG. 1, FIG. 4B is a plan view showing an example of another dot pattern serving as the uneven portion shown in FIG. FIG. 4C is a plan view showing an example of a stripe pattern serving as the uneven portion.

FIG. 5 is a longitudinal sectional view showing a configuration of an electromagnetic wave detector according to another embodiment of the present invention and corresponding to a portion shown in FIG. 1 of the electromagnetic wave detector.

FIG. 6 is a plan view showing a configuration of an electromagnetic wave detector according to still another embodiment of the present invention, in the vicinity of a peripheral region of an active matrix substrate on which uneven portions are formed.

FIG. 7 is a schematic longitudinal sectional view of a liquid crystal display device showing an example in which the active matrix substrate shown in the embodiment of the present invention is applied to a liquid crystal display device.

FIG. 8 shows a configuration of an electromagnetic wave detector according to still another embodiment of the present invention, and is a plan view of a main part in a pixel array region of an active matrix substrate on which uneven portions are formed.

FIG. 9 is a longitudinal sectional view illustrating the operation principle of a conventional electromagnetic wave detector.

[Explanation of symbols]

 Reference Signs List 11 active matrix substrate 12 semiconductor film (semiconductor layer) 13 bias electrode 14 pixel array region 15 peripheral region 17 uneven portion 21 insulating substrate 22 TFT element 23 charge storage capacitor 24 charge collection electrode (pixel electrode) 28 connection electrode 31 interlayer insulating film ( (Interlayer insulating layer) 34 contact hole 41 inorganic film (inorganic layer) 51 connection terminal 52 lead-out wiring

Claims (13)

[Claims] 1. A plurality of electrode wirings arranged in a grid on an insulating substrate, active elements arranged for each grid of the electrode wirings, and interlayers provided on the electrode wirings and the active element. In an active matrix substrate including an insulating layer and a plurality of pixel electrodes formed on the interlayer insulating layer, the interlayer insulating layer includes: a pixel array region in which the electrode wirings are arranged in a grid; At least a portion of the upper surface of the interlayer insulating layer disposed in the peripheral region is arranged so as to cover at least a part of a peripheral region surrounding the arrangement region, and includes at least one of a concave portion and a convex portion. An active matrix substrate having an uneven portion. 2. The active matrix substrate according to claim 1, wherein said interlayer insulating layer is made of a photosensitive organic material. 3. The surface of the uneven portion is covered with an inorganic layer that provides a higher bonding strength to the semiconductor layer laminated on the active matrix substrate so as to be in contact with the uneven portion. The active matrix substrate according to claim 1, wherein: 4. The active matrix substrate according to claim 3, wherein said inorganic layer is made of the same material as said pixel electrode. 5. The uneven portion is formed in the interlayer insulating layer in a region in contact with the insulating substrate and has a structure penetrating the interlayer insulating layer, and a portion between the interlayer insulating layer and the insulating substrate in the uneven portion is provided. Wherein an inorganic layer having a higher bonding strength than a surface of the insulating substrate is formed on a semiconductor layer laminated on the active matrix substrate so as to be in contact with the uneven portion. 4. The active matrix substrate according to 3. 6. The semiconductor device according to claim 1, wherein the uneven portion is formed at a position that does not overlap with the electrode wiring in a laminating direction of the interlayer insulating layer with respect to the electrode wiring. The active matrix substrate according to the above. 7. An active matrix substrate according to any one of claims 1 to 6, wherein an electromagnetic wave conductivity is provided so as to cover the pixel array region and at least a part of the peripheral region on the active matrix substrate. An electromagnetic wave detector, comprising: a semiconductor layer having the semiconductor layer, the semiconductor layer being stacked on the uneven portion in the peripheral region. 8. The portion of the semiconductor layer on the concave / convex portion, as it goes outward from the active matrix substrate,
The electromagnetic wave detector according to claim 7, wherein the electromagnetic wave detector is formed so as to have a gradually decreasing thickness. 9. A pixel array area in which a plurality of electrode wirings arranged in a grid and active elements arranged for each grid of these electrode wirings are provided, and a peripheral area surrounding the pixel array area is provided. An electromagnetic wave detector, comprising: an active matrix substrate; and a semiconductor layer having electromagnetic conductivity formed on a surface of the active matrix substrate so as to cover the pixel array region and at least a part of the peripheral region. An electromagnetic wave detector, wherein an uneven portion composed of at least one of a concave portion and a convex portion is formed on a surface of at least a part of the peripheral region of the matrix substrate which is in contact with the semiconductor layer. 10. An insulating substrate having a plurality of electrode wirings arranged in a grid pattern, an active element, an interlayer insulating layer, a plurality of pixel electrodes, and a plurality of pixel electrodes arranged in each grid of these electrode wirings, and having electromagnetic wave conductivity. In the electromagnetic wave detector in which the semiconductor layers are sequentially stacked, at least a part of a region of the interlayer insulating layer that is in contact with the semiconductor layer has an uneven portion formed of at least one of a concave portion and a convex portion. Characteristic electromagnetic wave detector. 11. The semiconductor device according to claim 9, wherein the surface of the uneven portion is covered with an inorganic layer having a higher bonding strength to the semiconductor layer than the surface of the uneven portion.
2. An electromagnetic wave detector according to claim 1. 12. The surface of the uneven portion is covered with an inorganic layer having higher bonding strength to the semiconductor layer than the surface of the uneven portion, and the inorganic layer is made of the same material as the pixel electrode. The electromagnetic wave detector according to claim 10, wherein: 13. The uneven portion is formed on the interlayer insulating layer in a region in contact with the insulating substrate and has a structure penetrating the interlayer insulating layer. The electromagnetic wave detector according to claim 10, wherein an inorganic layer having a higher bonding strength with respect to the semiconductor layer than a surface of the insulating substrate is formed between the semiconductor layers.