KR20020017998A - 반사방지막을 갖는 광학부재 - Google Patents
반사방지막을 갖는 광학부재 Download PDFInfo
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- KR20020017998A KR20020017998A KR1020010051444A KR20010051444A KR20020017998A KR 20020017998 A KR20020017998 A KR 20020017998A KR 1020010051444 A KR1020010051444 A KR 1020010051444A KR 20010051444 A KR20010051444 A KR 20010051444A KR 20020017998 A KR20020017998 A KR 20020017998A
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- GEIHDEVWPDTQIM-UHFFFAOYSA-N methyl-tris(phenylmethoxy)silane Chemical compound C=1C=CC=CC=1CO[Si](OCC=1C=CC=CC=1)(C)OCC1=CC=CC=C1 GEIHDEVWPDTQIM-UHFFFAOYSA-N 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Chemical group 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002578 polythiourethane polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- OAVPBWLGJVKEGZ-UHFFFAOYSA-N tributoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCCCC)(OCCCC)OCCCC)CCC2OC21 OAVPBWLGJVKEGZ-UHFFFAOYSA-N 0.000 description 1
- FQYWWLSIKWDAEC-UHFFFAOYSA-N tributoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCOCC1CO1 FQYWWLSIKWDAEC-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- UNKMHLWJZHLPPM-UHFFFAOYSA-N triethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1CO1 UNKMHLWJZHLPPM-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- OHKFEBYBHZXHMM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CCC)OCC1CO1 OHKFEBYBHZXHMM-UHFFFAOYSA-N 0.000 description 1
- SJQPASOTJGFOMU-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)C(C)OCC1CO1 SJQPASOTJGFOMU-UHFFFAOYSA-N 0.000 description 1
- NFRRMEMOPXUROM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CC)OCC1CO1 NFRRMEMOPXUROM-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- FVMMYGUCXRZVPJ-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(CC)OCC1CO1 FVMMYGUCXRZVPJ-UHFFFAOYSA-N 0.000 description 1
- RWJUTPORTOUFDY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)CCOCC1CO1 RWJUTPORTOUFDY-UHFFFAOYSA-N 0.000 description 1
- NLKPPXKQMJDBFO-UHFFFAOYSA-N triethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OCC)(OCC)OCC)CCC2OC21 NLKPPXKQMJDBFO-UHFFFAOYSA-N 0.000 description 1
- KPNCYSTUWLXFOE-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCC(C)OCC1CO1 KPNCYSTUWLXFOE-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- PSUKBUSXHYKMLU-UHFFFAOYSA-N triethoxy-[4-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(CCCC[Si](OCC)(OCC)OCC)CCC2OC21 PSUKBUSXHYKMLU-UHFFFAOYSA-N 0.000 description 1
- GSUGNQKJVLXBHC-UHFFFAOYSA-N triethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCCOCC1CO1 GSUGNQKJVLXBHC-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- LFBULLRGNLZJAF-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](OC)(OC)COCC1CO1 LFBULLRGNLZJAF-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- FFJVMNHOSKMOSA-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCCC([Si](OC)(OC)OC)OCC1CO1 FFJVMNHOSKMOSA-UHFFFAOYSA-N 0.000 description 1
- FNBIAJGPJUOAPB-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)C(CC)OCC1CO1 FNBIAJGPJUOAPB-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- KKFKPRKYSBTUDV-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CC(CC)OCC1CO1 KKFKPRKYSBTUDV-UHFFFAOYSA-N 0.000 description 1
- ZNXDCSVNCSSUNB-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)CCOCC1CO1 ZNXDCSVNCSSUNB-UHFFFAOYSA-N 0.000 description 1
- HTVULPNMIHOVRU-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CC(C)OCC1CO1 HTVULPNMIHOVRU-UHFFFAOYSA-N 0.000 description 1
- DBUFXGVMAMMWSD-UHFFFAOYSA-N trimethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OC)(OC)OC)CCC2OC21 DBUFXGVMAMMWSD-UHFFFAOYSA-N 0.000 description 1
- ZQPNGHDNBNMPON-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCC(C)OCC1CO1 ZQPNGHDNBNMPON-UHFFFAOYSA-N 0.000 description 1
- ZOWVSEMGATXETK-UHFFFAOYSA-N trimethoxy-[4-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(CCCC[Si](OC)(OC)OC)CCC2OC21 ZOWVSEMGATXETK-UHFFFAOYSA-N 0.000 description 1
- GUKYSRVOOIKHHB-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCOCC1CO1 GUKYSRVOOIKHHB-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
실시예 1 | 실시예 2 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 150V | 150V | ||
전류치 | 100mA | 100mA | ||
조사시간 | 60초 | 60초 | ||
사용가스 | Ar | Ar | ||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | Nb 4.0nm | 150V 100mA | Nb 4.0nm | 150V 100mA |
제1층 | SiO231.5nm | 450V 160mA | SiO222.0nm | 450V 160mA |
제2층 | TiO23.5nm | 360V 105mA | TiO229.0nm | 360V 105mA |
제3층 | SiO2235.0nm | 150V 160mA | SiO248.5nm | 450V 160mA |
제4층 | TiO223.5nm | 360V 105mA | TiO298.0nm | 360V 105mA |
제5층 | SiO242.5nm | 450V 160mA | SiO223.5nm | 450V 160mA |
제6층 | TiO2251.5nm | 360V 105mA | TiO288.0nm | 360V 105mA |
제7층 | SiO2118.0nm | 450V 160mA | SiO2130.0nm | 450V 160mA |
이온어시스트사용가스 | Nb,SiO2=Ar가스TiO2= O21:1 Ar | Nb,SiO2=Ar가스TiO2= O21:1 Ar | ||
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 0.82% | 0.82% | ||
시감투과율(YT)% | 99.0% | 99.0% | ||
밀착성 | 100/100 | 100/100 | ||
내마모성 | UA | UA toA | ||
내열성 | 95℃ | 100℃ | ||
내알칼리성 | UA | UA toA | ||
내충격성 | ○ | ○ |
실시예 3 | 실시예 4 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 150V | 150V | ||
전류치 | 100mA | 100mA | ||
조사시간 | 60초 | 40초 | ||
사용가스 | Ar | Ar | ||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | Nb 3.5nm | 150V 100mA | Nb 4.0nm | 150V 100mA |
제1층 | SiO294.0nm | 450V 160mA | SiO2108.0nm | 450V 160mA |
제2층 | TiO23.5nm | 360V 105mA | TiO252.5nm | 360V 105mA |
제3층 | SiO294.0nm | 150V 100mA | SiO2271.8nm | 450V 160mA |
제4층 | TiO2225.5nm | 360V 105mA | TiO238.6nm | 360V 105mA |
제5층 | SiO242.6nm | 450V 160mA | SiO238.6nm | 450V 160mA |
제6층 | TiO2249.0nm | 360V 105mA | TiO2242.8nm | 360V 105mA |
제7층 | SiO2117.0nm | 450V 160mA | SiO2119.0nm | 450V 160mA |
이온어시스트사용가스 | Nb,SiO2=Ar가스TiO2= O21:1 Ar | Nb,SiO2=Ar가스TiO2= O21:1 Ar | ||
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 0.82% | 0.68% | ||
시감투과율(YT)% | 99.0% | 99.3% | ||
밀착성 | 100/100 | 100/100 | ||
내마모성 | UA | UA∼toA | ||
내열성 | 95℃ | 100℃ | ||
내알칼리성 | UA | UA | ||
내충격성 | ○ | ○ |
실시예 5 | 실시예 6 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 150V | 150V | ||
전류치 | 100mA | 100mA | ||
조사시간 | 40초 | 40초 | ||
사용가스 | Ar | Ar | ||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | Nb 4.0nm | 150V 100mA | Nb 3.5nm | 150V 100mA |
제1층 | SiO27.9nm | 450V 160mA | SiO2111.9nm | 450V 160mA |
제2층 | TiO228.4nm | 360V 105mA | Nb3.5nm | 150V 100mA |
제3층 | SiO249.0nm | 450V 160mA | SiO2111.9nm | 450V 160mA |
제4층 | TiO2116.5nm | 360V 105mA | TiO225.2nm | 360V 105mA |
제5층 | SiO210.9nm | 450V 160mA | SiO241.2nm | 450V 160mA |
제6층 | TiO2110.8nm | 360V 105mA | TiO2245.0nm | 360V 105mA |
제7층 | SiO2125.5nm | 450V 160mA | SiO2119.3nm | 450V 160mA |
이온어시스트사용가스 | Nb,SiO2=Ar가스TiO2= O21:1 Ar | Nb,SiO2=Ar가스TiO2= O21:1 Ar | ||
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 0.68% | 0.68% | ||
시감투과율(YT)% | 99.3% | 99.3% | ||
밀착성 | 100/100 | 100/100 | ||
내마모성 | UA to A | UA | ||
내열성 | 100℃ | 95℃ | ||
내알칼리성 | UA toA | UA | ||
내충격성 | ○ | ○ |
실시예 7 | 실시예 8 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 150V | 150V | ||
전류치 | 100mA | 100mA | ||
조사시간 | 60초 | 60초 | ||
사용가스 | Ar | Ar | ||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | Nb 0.4nm | 150V 100mA | Nb 4.0nm | 150V 100mA |
제1층 | SiO214.6nm | 450V 160mA | SiO210.5nm | 450V 160mA |
제2층 | Ta2O59.5nm | 420V 120mA | Ta2O526.0nm | 420V 120mA |
제3층 | SiO2292.0nm | 450V 160mA | SiO254.2nm | 450V 160mA |
제4층 | Ta2O566.8nm | 420V 120mA | Ta2O594.0nm | 420V 120mA |
제5층 | SiO229.7nm | 450V 160mA | SiO224.2nm | 450V 160mA |
제6층 | Ta2O5124.9nm | 420V 120mA | Ta2O591.0nm | 420V 120mA |
제7층 | SiO2131.2nm | 450V 160mA | SiO2134.1nm | 450V 160mA |
이온어시스트사용가스 | Nb,SiO2=Ar가스Ta2O5= O21:0.25 Ar | Nb,SiO2=Ar가스Ta2O5= O21:0.25 Ar | ||
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 0.80% | 0.80% | ||
시감투과율(YT)% | 99.1% | 99.1% | ||
밀착성 | 100/100 | 100/100 | ||
내마모성 | UA | UA | ||
내열성 | 95℃ | 95℃ | ||
내알칼리성 | UA | UA | ||
내충격성 | ○ | ○ |
실시예 9 | 실시예 10 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 150V | 150V | ||
전류치 | 100mA | 100mA | ||
조사시간 | 60초 | 60초 | ||
사용가스 | Ar | Ar | ||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | Nb 4.0nm | 150V 100mA | Nb 4.0nm | 150V 100mA |
제1층 | SiO233.5nm | 450V 160mA | SiO210.5nm | 450V 160mA |
제2층 | Nb2O54.5nm | 360V 105mA | Nb2O526.4nm | 360V 105mA |
제3층 | SiO2292.0nm | 450V 160mA | SiO254.2nm | 450V 160mA |
제4층 | Nb2O523.9nm | 360V 105mA | Nb2O594.0nm | 360V 105mA |
제5층 | SiO246.2nm | 450V 160mA | SiO224.2nm | 450V 160mA |
제6층 | Nb2O5243.8nm | 360V 105mA | Nb2O591.0nm | 360V 105mA |
제7층 | SiO2121.2nm | 450V 160mA | SiO2134.1nm | 450V 160mA |
이온어시스트사용가스 | Nb,SiO2=Ar가스Nb2O5= O21:0.11 Ar | Nb,SiO2=Ar가스Nb2O5= O21:0.11 Ar | ||
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 0.68% | 0.68% | ||
시감투과율(YT)% | 99.3% | 99.3% | ||
밀착성 | 100/100 | 100/100 | ||
내마모성 | UA | UA toA | ||
내열성 | 95℃ | 100℃ | ||
알칼리성 | UA | UA toA | ||
내충격성 | ○ | ○ |
실시예 11 | 실시예 12 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 150V | 150V | ||
전류치 | 100mA | 100mA | ||
조사시간 | 40초 | 40초 | ||
사용가스 | Ar | Ar | ||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | Nb 3.5nm | 150V 100mA | Nb 4.0nm | 150V 100mA |
제1층 | SiO2111.6nm | 450V 160mA | SiO210.5nm | 450V 160mA |
제2층 | Nb3.5nm | 150V 100mA | Nb2O526.4nm | 360V 105mA |
제3층 | SiO2111.6nm | 450V 160mA | SiO254.2nm | 450V 160mA |
제4층 | Nb20524.9nm | 360V 105mA | Nb2O594.0nm | 360V 105mA |
제5층 | SiO239.5nm | 450V 160mA | SiO224.2nm | 450V 160mA |
제6층 | Nb2O5236.3nm | 360V 105mA | Nb2O591.0nm | 360V 105mA |
제7층 | SiO2120.2nm | 450V 160mA | SiO2134.5nm | 450V 160mA |
이온어시스트사용가스 | Nb,SiO2=Ar가스Nb2O5= O21:0.11 Ar | Nb,SiO2=Ar가스Nb2O5= O21:0.11 Ar | ||
프라스틱렌즈성능평가 | ||||
시감반사율(YR)% | 0.68% | 0.68% | ||
시감투과율(YT)% | 99.3% | 99.3% | ||
밀착성 | 100/100 | 100/100 | ||
내마모성 | UA | UA toA | ||
내열성 | 95℃ | 100℃ | ||
알칼리성 | UA | UA toA | ||
내충격성 | ○ | ○ |
비교예 1 | 비교예 2 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 없슴 | 없음 | ||
전류치 | ||||
조사시간 | ||||
사용가스 | ||||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | - | - | - | - |
제1층 | SiO231.5nm | - | SiO222.0nm | - |
제2층 | Ti023.5nm | - | Ti0229.0nm | - |
제3층 | SiO2238.0nm | - | SiO248.5nm | - |
제4층 | TiO223.5nm | - | TiO298.0nm | - |
제5층 | SiO2425.0nm | - | SiO223.5nm | - |
제6층 | TiO2251.5nm | - | TiO288.0nm | - |
제7층 | SiO2118.0nm | - | SiO2130.0nm | - |
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 1.1% | 1.1% | ||
시감투과율(YT)% | 98.7% | 98.7% | ||
밀착성 | 95/100 | 95/100 | ||
내마모성 | B | B toC | ||
내열성 | 70℃ | 70℃ | ||
알칼리성 | B | B toC | ||
내충격성 | × | ○ |
비교예 3 | 비교예 4 | |||
프라스틱렌즈기판 | 디에틸렌글리콜비스알릴 카르보네이트 | 디에틸렌글리콜비스알릴 카르보네이트 | ||
경화피막층 | A층 | A층 | ||
전처리이온 가속전압 | 없슴 | 없음 | ||
전류치 | ||||
조사시간 | ||||
사용가스 | ||||
막종류 막두께 | 이온총설정치 | 막종류 막두께 | 이온총설정치 | |
기본층 | - | - | - | - |
제1층 | SiO214.6nm | - | SiO210.5nm | - |
제2층 | Ta2059.5nm | - | Ta20526.4nm | - |
제3층 | SiO2292.0nm | - | SiO254.2nm | - |
제4층 | Ta2O566.8nm | - | Ta2O594.0nm | - |
제5층 | SiO229.7nm | - | SiO224.2nm1 | - |
제6층 | Ta2O5124.9nm | - | Ta2O591.0nm | - |
제7층 | SiO2131.2nm | - | SiO2134.1nm | - |
프라스틱렌즈 성능평가 | ||||
시감반사율(YR)% | 1.2% | 1.2% | ||
시감투과율(YT)% | 98.6% | 98.6% | ||
밀착성 | 95/100 | 95/100 | ||
내마모성 | B | B toC | ||
내열성 | 70℃ | 75℃ | ||
알칼리성 | B | B | ||
내충격성 | × | × |
Claims (11)
- 프라스틱 기재와, 이 기재상에 알루미늄(Al),탄탈(Ta)과 크롬(Cr) 중에서 선택된 하나이상의 성분 및 그의 혼합물과 함께 전체 층의 최고 50중량%까지의 양으로 혼합될 수 있는 니오브(Nb)로 된 기본층, 그리고 반사방지막을 포함하는 것을 특징으로 하는 광학부재.
- 제1항에 있어서,기본층이 Nb으로 구성되는 것을 특징으로 하는 광학부재.
- 제1항 또는 제2항에 있어서,기본층이 1.0∼5.0nm의 두께를 갖는 것을 특징으로 하는 광학부재.
- 전술한 항 중 어느 항에 있어서,기본층이 이온어시스트법에 의해 수득되는 것을 특징으로 하는 광학부재.
- 전술한 항 중 어느 항에 있어서,반사방지막이 두 개 또는 그 이상의 층으로 구성되는 것을 특징으로 하는 광학부재.
- 전술한 항 중 어느 항에 있어서,반사방지막의 적어도 한 층이 이온어시스트공정에 의해 수득되는 것을 특징으로 하는 광학부재.
- 전술한 항 중 어느 항에 있어서,반사방지막이 저굴절 Sio2층과 고굴절 TiO2층을 갖는 것을 특징으로 하는 광학부재
- 전술한 항 중 어느 항에 있어서,반사방지막이 니오브(Nb)층으로 구성된 것을 특징으로 하는 광학부재.
- 제1항 내지 제4항 및 제6항 중의 어느 한 항에 있어서,상기한 반사방지막은 기본층에 대해 순차로 제공된 제1 내지 7층을 포함하고여기서 제1층, 3층, 5층 및 7층은 SiO2층으로 되고 제2층, 4층 및 6층은 TiO2층으로 되는 것을 특징으로 하는 광학부재.
- 제1항 내지 제6항 중의 어느 한 항에 있어서,상기한 반사방지막은 기본층에 대해 순차로 제공된 제1 내지 7층을 포함하고 여기서 제1층, 3층, 5층 및 7층은 SiO2층으로 되고, 제2층은 Nb로 되며 제4층 및 6층은 TiO2층으로 되는 것을 특징으로 하는 광학부재.
- 전술한 항 중 어느 항에 있어서,프라스틱 기재와 기본층 사이에 경화피막을 갖는 것을 특징으로 하는 광학부재.
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JPJP-P-2000-00258628 | 2000-08-29 | ||
JP2000258628A JP3510845B2 (ja) | 2000-08-29 | 2000-08-29 | 反射防止膜を有する光学部材 |
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KR20020017998A true KR20020017998A (ko) | 2002-03-07 |
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US (2) | US20020048087A1 (ko) |
EP (1) | EP1184686B1 (ko) |
JP (1) | JP3510845B2 (ko) |
KR (1) | KR100483680B1 (ko) |
CN (1) | CN1172198C (ko) |
AT (1) | ATE328296T1 (ko) |
AU (1) | AU775324B2 (ko) |
CA (1) | CA2354961C (ko) |
DE (1) | DE60120059T2 (ko) |
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-
2000
- 2000-08-29 JP JP2000258628A patent/JP3510845B2/ja not_active Expired - Fee Related
-
2001
- 2001-08-07 AU AU57847/01A patent/AU775324B2/en not_active Ceased
- 2001-08-13 CA CA002354961A patent/CA2354961C/en not_active Expired - Fee Related
- 2001-08-16 TW TW090120086A patent/TW578004B/zh not_active IP Right Cessation
- 2001-08-24 KR KR10-2001-0051444A patent/KR100483680B1/ko not_active Expired - Fee Related
- 2001-08-27 HU HU0103476A patent/HUP0103476A3/hu unknown
- 2001-08-28 US US09/939,668 patent/US20020048087A1/en not_active Abandoned
- 2001-08-29 DE DE60120059T patent/DE60120059T2/de not_active Expired - Lifetime
- 2001-08-29 AT AT01120617T patent/ATE328296T1/de not_active IP Right Cessation
- 2001-08-29 EP EP01120617A patent/EP1184686B1/en not_active Expired - Lifetime
- 2001-08-29 CN CNB011331291A patent/CN1172198C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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ATE328296T1 (de) | 2006-06-15 |
HUP0103476A3 (en) | 2007-11-28 |
JP3510845B2 (ja) | 2004-03-29 |
EP1184686A2 (en) | 2002-03-06 |
TW578004B (en) | 2004-03-01 |
EP1184686A3 (en) | 2004-03-31 |
DE60120059D1 (de) | 2006-07-06 |
CN1341866A (zh) | 2002-03-27 |
AU5784701A (en) | 2002-03-07 |
US6693747B2 (en) | 2004-02-17 |
DE60120059T2 (de) | 2006-12-21 |
JP2002071903A (ja) | 2002-03-12 |
US20030193719A1 (en) | 2003-10-16 |
EP1184686B1 (en) | 2006-05-31 |
AU775324B2 (en) | 2004-07-29 |
US20020048087A1 (en) | 2002-04-25 |
CA2354961C (en) | 2005-03-15 |
CN1172198C (zh) | 2004-10-20 |
KR100483680B1 (ko) | 2005-04-18 |
CA2354961A1 (en) | 2002-02-28 |
HUP0103476A2 (en) | 2002-08-28 |
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