KR20020011885A - 포지티브 포토레지스트 조성물 - Google Patents

포지티브 포토레지스트 조성물 Download PDF

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Publication number
KR20020011885A
KR20020011885A KR1020010046491A KR20010046491A KR20020011885A KR 20020011885 A KR20020011885 A KR 20020011885A KR 1020010046491 A KR1020010046491 A KR 1020010046491A KR 20010046491 A KR20010046491 A KR 20010046491A KR 20020011885 A KR20020011885 A KR 20020011885A
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KR
South Korea
Prior art keywords
group
acid
photoresist composition
positive photoresist
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010046491A
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English (en)
Korean (ko)
Inventor
후지모리토루
탄시로
Original Assignee
무네유키 가코우
후지 샤신 필름 가부시기가이샤
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Application filed by 무네유키 가코우, 후지 샤신 필름 가부시기가이샤 filed Critical 무네유키 가코우
Publication of KR20020011885A publication Critical patent/KR20020011885A/ko
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020010046491A 2000-08-02 2001-08-01 포지티브 포토레지스트 조성물 Ceased KR20020011885A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000234733A JP4190138B2 (ja) 2000-08-02 2000-08-02 ポジ型フォトレジスト組成物
JPJP-P-2000-00234733 2000-08-02

Publications (1)

Publication Number Publication Date
KR20020011885A true KR20020011885A (ko) 2002-02-09

Family

ID=18727067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010046491A Ceased KR20020011885A (ko) 2000-08-02 2001-08-01 포지티브 포토레지스트 조성물

Country Status (3)

Country Link
JP (1) JP4190138B2 (https=)
KR (1) KR20020011885A (https=)
TW (1) TWI240848B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101350717B1 (ko) * 2007-11-27 2014-02-04 도요 고세이 고교 가부시키가이샤 감광성 수지 및 감광성 조성물

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101036501B1 (ko) * 2002-11-22 2011-05-24 후지필름 가부시키가이샤 포지티브형 레지스트 조성물 및 그것을 사용한 패턴형성방법
KR100821440B1 (ko) 2003-01-31 2008-04-10 미츠비시 레이온 가부시키가이샤 레지스트용 중합체 및 레지스트 조성물
JP4121396B2 (ja) 2003-03-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
JP4115322B2 (ja) 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
DE602004023668D1 (de) * 2003-03-31 2009-12-03 Fujifilm Corp Positiv arbeitende Resistzusammensetzung
JP4418659B2 (ja) * 2003-09-26 2010-02-17 富士フイルム株式会社 ポジ型電子線、x線又はeuv光用レジスト組成物及びそれを用いたパターン形成方法
JP4486839B2 (ja) * 2004-03-24 2010-06-23 富士フイルム株式会社 電子線、x線又はeuv光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4626955B2 (ja) * 2004-10-06 2011-02-09 東邦化学工業株式会社 p−ヒドロキシスチレン系重合体の製造方法
JP4921160B2 (ja) * 2006-05-30 2012-04-25 兵庫県 感光性樹脂及び感光性組成物
US8182975B2 (en) 2007-03-28 2012-05-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP5039410B2 (ja) * 2007-03-29 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
US7498116B2 (en) 2007-03-30 2009-03-03 Fujifilm Corporation Resist composition and pattern formation method using the same
JP5039493B2 (ja) 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
JP5039492B2 (ja) 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
JP5537920B2 (ja) 2009-03-26 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
JPWO2024053579A1 (https=) * 2022-09-08 2024-03-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101350717B1 (ko) * 2007-11-27 2014-02-04 도요 고세이 고교 가부시키가이샤 감광성 수지 및 감광성 조성물

Also Published As

Publication number Publication date
JP2002049156A (ja) 2002-02-15
TWI240848B (en) 2005-10-01
JP4190138B2 (ja) 2008-12-03

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