KR20020011375A - 초기 금속을 갖는 범프 및 그 초기 금속을 제조하는 방법 - Google Patents
초기 금속을 갖는 범프 및 그 초기 금속을 제조하는 방법 Download PDFInfo
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- KR20020011375A KR20020011375A KR1020017012228A KR20017012228A KR20020011375A KR 20020011375 A KR20020011375 A KR 20020011375A KR 1020017012228 A KR1020017012228 A KR 1020017012228A KR 20017012228 A KR20017012228 A KR 20017012228A KR 20020011375 A KR20020011375 A KR 20020011375A
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- Prior art keywords
- coating
- terminal surface
- palladium
- zinc
- zincate
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001465 metallisation Methods 0.000 title description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 122
- 238000000576 coating method Methods 0.000 claims abstract description 105
- 239000011248 coating agent Substances 0.000 claims abstract description 102
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 62
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 46
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims abstract description 46
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 44
- 239000011701 zinc Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000002245 particle Substances 0.000 claims abstract description 29
- 239000003792 electrolyte Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 6
- 150000003751 zinc Chemical class 0.000 claims description 15
- 238000005844 autocatalytic reaction Methods 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000006911 nucleation Effects 0.000 description 15
- 238000010899 nucleation Methods 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 3
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- -1 palladium ions Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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Abstract
Description
Claims (12)
- 단자면이 아연산염에 의한 전해질 코팅을 통해 초기 금속화되도록 핵화됨으로써, 상기 단자면 상에 전기분해되어 증착된 아연 입자가 자가촉매 반응에 의해 상기 초기 금속상에 콘택 금속이 증착되기 위한 핵으로 작용하며, 상기 아연산염에 의한 전해질 코팅에 추가하여 상기 단자면(21)은 팔라듐에 의해 전해질 코딩되며, 상기 단자면(21)상에 증착된 상기 아연 입자(24) 및 팔라듐 입자(25)가 핵으로 작용함으로써 후속하여 상기 단자면상에 자가촉매 반응에 의해 상기 콘택 금속(28, 29)이 증착되도록 한 것을 특징으로 하는 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 1항에 있어서,상기 아연산염에 의한 상기 단자면(21)의 전해질 코팅(아연산염 코팅)은 제1공정에서 일어나며, 상기 팔라듐에 의한 단자면의 전해질 코팅(팔라듐 코팅)은 후속하는 제2공정에서 일어남을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 2항에 있어서,상기 아연 입자(24)를 적어도 일부분 제거한 후 아연산염 코팅을 재개한 다음 상기 팔라듐 코팅을 실시함을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 1항에 있어서,상기 팔라듐에 의한 상기 단자면(21)의 전해질 코팅(팔라듐 코팅)은 제1공정에서 일어나며, 상기 아연산염에 의한 단자면의 전해질 코팅(아연산염 코팅)은 후속하는 제2공정에서 일어남을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 4항에 있어서,상기 아연산염 코팅 이후에 상기 아연 입자(24)를 적어도 일부분 제거한 다음 아연산염 코팅을 재개함을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 1항에 있어서,아연산염에 의한 상기 단자면(21)의 제1전해질 코팅은 제1공정에서 일어나며, 팔라듐에 의한 상기 단자면의 전해질 코팅(팔라듐 코팅)은 후속하는 제2공정에서 일어나며, 제2아연산염 코팅은 제3공정으로 일어남을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 6항에 있어서,상기 제1아연산염 코팅을 한 다음 상기 팔라듐 코팅을 실시하기 이전에 상기 아연 입자(24)를 적어도 일부분 제거함을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 1항에 있어서,아연산염에 의한 상기 단자면(21)의 전해질 코팅(아연산염 코팅)과 팔라듐에 의한 상기 단자면의 전해질 코팅(팔라듐 코팅)은 단일 공정으로 실시되며, 상기 아연산염 코팅은 혼합 전해질을 통하여 상기 팔라듐 코팅과 동시에 일어남(아연산염/팔라듐 코팅)을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 8항에 있어서,상기 아연산염/팔라듐 코팅 이후에 상기 아연 입자(24)를 적어도 일부분 제거한 후에 상기 아연산염의 단자면(21) 코팅을 재개함을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 8항에 있어서,상기 아연산염/팔라듐 코팅은 상기 단자면(21)의 아연산염 코팅을 한 다음에 실시되며, 그 후 상기 아연 입자(24)를 적어도 일부분 제거함을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 제 1항 내지 제 10항 중 어느 한 항에 있어서,상기 적어도 일부분의 아연 입자(24)의 제거는 스트립(strip)을 통하여 실시됨을 특징으로 하는 상기 반도체 기판의 단자면상에 범프를 제조하는 방법.
- 반도체 기판의 단자면상에 위치한 초기 금속과 상기 초기 금속상에 콘택 금속을 가지며, 상기 초기 금속은 아연과 팔라듐을 포함하는 것을 특징으로 하는 범프 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE19914338A DE19914338A1 (de) | 1999-03-30 | 1999-03-30 | Kontakthöcker mit Trägermetallisierung sowie Verfahren zur Herstellung der Trägermetallisierung |
DE19914338.2 | 1999-03-30 |
Publications (2)
Publication Number | Publication Date |
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KR20020011375A true KR20020011375A (ko) | 2002-02-08 |
KR100679064B1 KR100679064B1 (ko) | 2007-02-05 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020017012228A KR100679064B1 (ko) | 1999-03-30 | 2000-03-29 | 초기 금속을 갖는 범프 및 그 초기 금속을 제조하는 방법 |
Country Status (6)
Country | Link |
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US (1) | US6720257B1 (ko) |
EP (1) | EP1175697B1 (ko) |
JP (1) | JP4204026B2 (ko) |
KR (1) | KR100679064B1 (ko) |
DE (2) | DE19914338A1 (ko) |
WO (1) | WO2000060649A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873040B1 (ko) * | 2002-06-11 | 2008-12-09 | 삼성테크윈 주식회사 | 반도체 팩키지 및, 반도체 팩키지의 범프 제조 방법 |
KR100963618B1 (ko) * | 2007-11-30 | 2010-06-15 | 주식회사 하이닉스반도체 | 반도체 패키지 및 이의 제조 방법 |
KR101050943B1 (ko) * | 2004-01-09 | 2011-07-20 | 매그나칩 반도체 유한회사 | 반도체 장치의 금속배선 형성 방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2273543A3 (en) * | 2001-12-14 | 2011-10-26 | STMicroelectronics S.r.l. | Semiconductor electronic device and method of manufacturing thereof |
KR100450685B1 (ko) * | 2002-11-30 | 2004-10-01 | 삼성전자주식회사 | 유전막 공정을 단순화하여 반도체 소자의 커패시터를제조하는 방법과 그 유전막을 형성하는 장치 |
KR102513360B1 (ko) * | 2016-02-22 | 2023-03-24 | 삼성디스플레이 주식회사 | 범프 구조물, 범프 구조물을 포함하는 구동 칩 및 범프 구조물의 제조 방법 |
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JPH0781060B2 (ja) | 1986-07-24 | 1995-08-30 | 日本ゼオン株式会社 | 熱可塑性エラストマ−組成物 |
US4970571A (en) * | 1987-09-24 | 1990-11-13 | Kabushiki Kaisha Toshiba | Bump and method of manufacturing the same |
JPH022132A (ja) * | 1988-06-14 | 1990-01-08 | Nec Corp | バンプ電極の製造方法 |
US5182006A (en) * | 1991-02-04 | 1993-01-26 | Enthone-Omi Inc. | Zincate solutions for treatment of aluminum and aluminum alloys |
JP2990955B2 (ja) | 1992-06-02 | 1999-12-13 | 東陶機器株式会社 | 銅メタライズ法 |
JPH09283557A (ja) * | 1996-04-16 | 1997-10-31 | World Metal:Kk | 電子素子チップと配線回路の電気的接合方法 |
DE19631565A1 (de) * | 1996-07-24 | 1998-01-29 | Atotech Deutschland Gmbh | Verfahren zum Herstellen von Palladiumkontaktbumps auf Halbleiterschaltungsträgern |
US6028011A (en) * | 1997-10-13 | 2000-02-22 | Matsushita Electric Industrial Co., Ltd. | Method of forming electric pad of semiconductor device and method of forming solder bump |
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1999
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- 2000-03-29 WO PCT/DE2000/000933 patent/WO2000060649A1/de active IP Right Grant
- 2000-03-29 EP EP00930988A patent/EP1175697B1/de not_active Expired - Lifetime
- 2000-03-29 JP JP2000610050A patent/JP4204026B2/ja not_active Expired - Lifetime
- 2000-03-29 US US09/937,955 patent/US6720257B1/en not_active Expired - Lifetime
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Publication number | Priority date | Publication date | Assignee | Title |
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KR100873040B1 (ko) * | 2002-06-11 | 2008-12-09 | 삼성테크윈 주식회사 | 반도체 팩키지 및, 반도체 팩키지의 범프 제조 방법 |
KR101050943B1 (ko) * | 2004-01-09 | 2011-07-20 | 매그나칩 반도체 유한회사 | 반도체 장치의 금속배선 형성 방법 |
KR100963618B1 (ko) * | 2007-11-30 | 2010-06-15 | 주식회사 하이닉스반도체 | 반도체 패키지 및 이의 제조 방법 |
Also Published As
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JP4204026B2 (ja) | 2009-01-07 |
WO2000060649A1 (de) | 2000-10-12 |
US6720257B1 (en) | 2004-04-13 |
DE19914338A1 (de) | 2000-10-05 |
DE50015309D1 (de) | 2008-09-25 |
JP2002541325A (ja) | 2002-12-03 |
EP1175697B1 (de) | 2008-08-13 |
EP1175697A1 (de) | 2002-01-30 |
KR100679064B1 (ko) | 2007-02-05 |
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