KR20010082216A - 유전체 재료 플라즈마 에칭 방법 - Google Patents

유전체 재료 플라즈마 에칭 방법 Download PDF

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Publication number
KR20010082216A
KR20010082216A KR1020017004035A KR20017004035A KR20010082216A KR 20010082216 A KR20010082216 A KR 20010082216A KR 1020017004035 A KR1020017004035 A KR 1020017004035A KR 20017004035 A KR20017004035 A KR 20017004035A KR 20010082216 A KR20010082216 A KR 20010082216A
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KR
South Korea
Prior art keywords
etching
layer
openings
reactor
etch
Prior art date
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Ceased
Application number
KR1020017004035A
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English (en)
Korean (ko)
Inventor
쥬헬렌
린드퀴스트로저에프.
Original Assignee
리차드 에이치. 로브그렌
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 리차드 에이치. 로브그렌, 램 리서치 코포레이션 filed Critical 리차드 에이치. 로브그렌
Publication of KR20010082216A publication Critical patent/KR20010082216A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020017004035A 1998-09-30 1999-09-24 유전체 재료 플라즈마 에칭 방법 Ceased KR20010082216A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/163,301 1998-09-30
US09/163,301 US6297163B1 (en) 1998-09-30 1998-09-30 Method of plasma etching dielectric materials
PCT/US1999/020888 WO2000019506A1 (en) 1998-09-30 1999-09-24 Method of plasma etching dielectric materials

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020077000756A Division KR20070020325A (ko) 1998-09-30 1999-09-24 유전체 재료 플라즈마 에칭 방법

Publications (1)

Publication Number Publication Date
KR20010082216A true KR20010082216A (ko) 2001-08-29

Family

ID=22589392

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017004035A Ceased KR20010082216A (ko) 1998-09-30 1999-09-24 유전체 재료 플라즈마 에칭 방법

Country Status (7)

Country Link
US (1) US6297163B1 (https=)
EP (1) EP1121714A1 (https=)
JP (1) JP4499289B2 (https=)
KR (1) KR20010082216A (https=)
AU (1) AU6246399A (https=)
TW (1) TW584672B (https=)
WO (1) WO2000019506A1 (https=)

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KR100434312B1 (ko) * 2000-12-21 2004-06-05 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성 방법

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US6518591B1 (en) * 1998-12-02 2003-02-11 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analizing contact-, via- and/or trench-forming processes in an integrated circuit
TW434816B (en) * 1998-12-28 2001-05-16 Asahi Chemical Micro Syst Method for forming contact hole
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6251770B1 (en) * 1999-06-30 2001-06-26 Lam Research Corp. Dual-damascene dielectric structures and methods for making the same
US6749763B1 (en) * 1999-08-02 2004-06-15 Matsushita Electric Industrial Co., Ltd. Plasma processing method
US20050158666A1 (en) * 1999-10-15 2005-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma
JP3586605B2 (ja) * 1999-12-21 2004-11-10 Ｎｅｃエレクトロニクス株式会社 シリコン窒化膜のエッチング方法及び半導体装置の製造方法
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
JP5407101B2 (ja) * 2000-09-07 2014-02-05 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
KR100379976B1 (ko) * 2000-11-27 2003-04-16 삼성전자주식회사 실리콘 산화물 식각용 가스 조성물 및 이를 사용한 실리콘산화물의 식각 방법
AU2002222631A1 (en) * 2000-12-21 2002-07-01 Tokyo Electron Limited Etching method for insulating film
US6740593B2 (en) * 2002-01-25 2004-05-25 Micron Technology, Inc. Semiconductor processing methods utilizing low concentrations of reactive etching components
US6593232B1 (en) 2002-07-05 2003-07-15 Taiwan Semiconductor Manufacturing Co., Ltd Plasma etch method with enhanced endpoint detection
US6838012B2 (en) 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US7083903B2 (en) * 2003-06-17 2006-08-01 Lam Research Corporation Methods of etching photoresist on substrates
US6949469B1 (en) 2003-12-16 2005-09-27 Lam Research Corporation Methods and apparatus for the optimization of photo resist etching in a plasma processing system
US7504340B1 (en) * 2004-06-14 2009-03-17 National Semiconductor Corporation System and method for providing contact etch selectivity using RIE lag dependence on contact aspect ratio
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
CN101416293B (zh) * 2006-03-31 2011-04-20 应用材料股份有限公司 用于介电膜层的阶梯覆盖与图案加载
DE112007002810T5 (de) * 2007-01-05 2009-11-12 Nxp B.V. Ätzverfahren mit verbesserter Kontrolle der kritischen Ausdehnung eines Strukturelements an der Unterseite dicker Schichten
US7985681B2 (en) * 2007-06-22 2011-07-26 Micron Technology, Inc. Method for selectively forming symmetrical or asymmetrical features using a symmetrical photomask during fabrication of a semiconductor device and electronic systems including the semiconductor device
US8603363B1 (en) * 2012-06-20 2013-12-10 Praxair Technology, Inc. Compositions for extending ion source life and improving ion source performance during carbon implantation
JP2014007270A (ja) * 2012-06-25 2014-01-16 Tokyo Electron Ltd エッチング方法及びエッチング装置
CN103824767B (zh) * 2012-11-16 2017-05-17 中微半导体设备(上海)有限公司 一种深硅通孔的刻蚀方法
JP6557642B2 (ja) * 2016-09-05 2019-08-07 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

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US5013400A (en) 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5021121A (en) 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
US5013398A (en) 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
US5022958A (en) 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
US6171974B1 (en) * 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US5269879A (en) 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
JPH06188229A (ja) * 1992-12-16 1994-07-08 Tokyo Electron Yamanashi Kk エッチングの後処理方法
JP3271359B2 (ja) * 1993-02-25 2002-04-02 ソニー株式会社 ドライエッチング方法
JP3252518B2 (ja) * 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
US5770098A (en) 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JPH07161702A (ja) 1993-10-29 1995-06-23 Applied Materials Inc 酸化物のプラズマエッチング方法
US5736457A (en) 1994-12-09 1998-04-07 Sematech Method of making a damascene metallization
JP3778299B2 (ja) 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5626716A (en) 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
JP3319285B2 (ja) * 1996-06-05 2002-08-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP3862035B2 (ja) * 1996-07-17 2006-12-27 ソニー株式会社 半導体装置およびその製造方法
JP3997494B2 (ja) * 1996-09-17 2007-10-24 ソニー株式会社 半導体装置
EP0945896B1 (en) * 1996-10-11 2005-08-10 Tokyo Electron Limited Plasma etching method
JP3713869B2 (ja) * 1997-02-17 2005-11-09 ソニー株式会社 半導体装置の製造方法
US5972235A (en) * 1997-02-28 1999-10-26 Candescent Technologies Corporation Plasma etching using polycarbonate mask and low pressure-high density plasma
US5780338A (en) 1997-04-11 1998-07-14 Vanguard International Semiconductor Corporation Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits
GB9712019D0 (en) * 1997-06-09 1997-08-06 Northern Telecom Ltd Eye measurement of optical sampling
US6051504A (en) 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434312B1 (ko) * 2000-12-21 2004-06-05 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성 방법

Also Published As

Publication number Publication date
WO2000019506A1 (en) 2000-04-06
JP4499289B2 (ja) 2010-07-07
US6297163B1 (en) 2001-10-02
TW584672B (en) 2004-04-21
AU6246399A (en) 2000-04-17
EP1121714A1 (en) 2001-08-08
JP2002526919A (ja) 2002-08-20
WO2000019506A9 (en) 2000-08-31

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