KR20010071820A - 에피택설 리액터 내의 입자를 감소시키기 위한 시스템 및방법 - Google Patents

에피택설 리액터 내의 입자를 감소시키기 위한 시스템 및방법 Download PDF

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Publication number
KR20010071820A
KR20010071820A KR1020017000387A KR20017000387A KR20010071820A KR 20010071820 A KR20010071820 A KR 20010071820A KR 1020017000387 A KR1020017000387 A KR 1020017000387A KR 20017000387 A KR20017000387 A KR 20017000387A KR 20010071820 A KR20010071820 A KR 20010071820A
Authority
KR
South Korea
Prior art keywords
gas
chamber
wafer
wafer transfer
transfer chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020017000387A
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English (en)
Korean (ko)
Inventor
알란 디. 돌리
데니스 엘. 굿윈
케네쓰 오닐
게르벤 브리즈버그
데이비드 로드리구에쯔
라빈더 아가왈
Original Assignee
러셀 엔. 페어뱅크스, 쥬니어
에이에스엠 아메리카, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 러셀 엔. 페어뱅크스, 쥬니어, 에이에스엠 아메리카, 인코포레이티드 filed Critical 러셀 엔. 페어뱅크스, 쥬니어
Publication of KR20010071820A publication Critical patent/KR20010071820A/ko
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020017000387A 1998-07-10 1999-06-30 에피택설 리액터 내의 입자를 감소시키기 위한 시스템 및방법 Abandoned KR20010071820A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/113,934 1998-07-10
US09/113,934 US6161311A (en) 1998-07-10 1998-07-10 System and method for reducing particles in epitaxial reactors
PCT/US1999/015070 WO2000003056A1 (en) 1998-07-10 1999-06-30 System and method for reducing particles in epitaxial reactors

Publications (1)

Publication Number Publication Date
KR20010071820A true KR20010071820A (ko) 2001-07-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017000387A Abandoned KR20010071820A (ko) 1998-07-10 1999-06-30 에피택설 리액터 내의 입자를 감소시키기 위한 시스템 및방법

Country Status (7)

Country Link
US (2) US6161311A (https=)
EP (2) EP1097251B1 (https=)
JP (1) JP2002520832A (https=)
KR (1) KR20010071820A (https=)
DE (1) DE69940064D1 (https=)
TW (1) TW445304B (https=)
WO (1) WO2000003056A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745966B1 (ko) * 2005-12-29 2007-08-02 동부일렉트로닉스 주식회사 플라즈마 처리장치 및 이의 세정 방법
KR100774711B1 (ko) * 2006-07-19 2007-11-08 동부일렉트로닉스 주식회사 반도체 제조용 에피택셜 장비의 파티클 제거 장치 및 제거방법
KR20230022354A (ko) * 2021-08-06 2023-02-15 세메스 주식회사 파티클 안정화 방법

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Publication number Priority date Publication date Assignee Title
KR100745966B1 (ko) * 2005-12-29 2007-08-02 동부일렉트로닉스 주식회사 플라즈마 처리장치 및 이의 세정 방법
KR100774711B1 (ko) * 2006-07-19 2007-11-08 동부일렉트로닉스 주식회사 반도체 제조용 에피택셜 장비의 파티클 제거 장치 및 제거방법
KR20230022354A (ko) * 2021-08-06 2023-02-15 세메스 주식회사 파티클 안정화 방법

Also Published As

Publication number Publication date
TW445304B (en) 2001-07-11
US6550158B2 (en) 2003-04-22
DE69940064D1 (de) 2009-01-22
EP1097251B1 (en) 2008-12-10
EP1956112A3 (en) 2008-10-22
EP1097251A4 (en) 2005-01-12
JP2002520832A (ja) 2002-07-09
US20010000759A1 (en) 2001-05-03
EP1956112A2 (en) 2008-08-13
US6161311A (en) 2000-12-19
WO2000003056A1 (en) 2000-01-20
EP1097251A1 (en) 2001-05-09

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