KR20010030365A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR20010030365A
KR20010030365A KR1020000053774A KR20000053774A KR20010030365A KR 20010030365 A KR20010030365 A KR 20010030365A KR 1020000053774 A KR1020000053774 A KR 1020000053774A KR 20000053774 A KR20000053774 A KR 20000053774A KR 20010030365 A KR20010030365 A KR 20010030365A
Authority
KR
South Korea
Prior art keywords
layer
tin
local wiring
contact holes
wiring
Prior art date
Application number
KR1020000053774A
Other languages
English (en)
Korean (ko)
Inventor
다카마쓰와타루
Original Assignee
가네꼬 히사시
닛본 덴기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가네꼬 히사시, 닛본 덴기 가부시끼가이샤 filed Critical 가네꼬 히사시
Publication of KR20010030365A publication Critical patent/KR20010030365A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020000053774A 1999-09-10 2000-09-09 반도체장치 및 그 제조방법 KR20010030365A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25805399A JP2001085433A (ja) 1999-09-10 1999-09-10 半導体装置及びその製造方法
JP11-258053 1999-09-10

Publications (1)

Publication Number Publication Date
KR20010030365A true KR20010030365A (ko) 2001-04-16

Family

ID=17314894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000053774A KR20010030365A (ko) 1999-09-10 2000-09-09 반도체장치 및 그 제조방법

Country Status (3)

Country Link
JP (1) JP2001085433A (ja)
KR (1) KR20010030365A (ja)
TW (1) TW471124B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396103B1 (ko) * 2000-12-08 2003-08-27 미쓰비시덴키 가부시키가이샤 반도체 기억 장치 및 그 제조 방법
KR100855284B1 (ko) * 2002-06-21 2008-09-01 매그나칩 반도체 유한회사 에스램의 국부 배선 형성방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100871357B1 (ko) 2002-06-29 2008-12-02 매그나칩 반도체 유한회사 에스램소자의 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396103B1 (ko) * 2000-12-08 2003-08-27 미쓰비시덴키 가부시키가이샤 반도체 기억 장치 및 그 제조 방법
KR100855284B1 (ko) * 2002-06-21 2008-09-01 매그나칩 반도체 유한회사 에스램의 국부 배선 형성방법

Also Published As

Publication number Publication date
TW471124B (en) 2002-01-01
JP2001085433A (ja) 2001-03-30

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application