KR20010029868A - 반도체 집적회로장치 및 그 제조방법 - Google Patents
반도체 집적회로장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR20010029868A KR20010029868A KR1020000036702A KR20000036702A KR20010029868A KR 20010029868 A KR20010029868 A KR 20010029868A KR 1020000036702 A KR1020000036702 A KR 1020000036702A KR 20000036702 A KR20000036702 A KR 20000036702A KR 20010029868 A KR20010029868 A KR 20010029868A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- silicon film
- silicon
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 122
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 154
- 239000012535 impurity Substances 0.000 claims abstract description 149
- 239000003990 capacitor Substances 0.000 claims abstract description 84
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 73
- 238000007788 roughening Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 262
- 229910052710 silicon Inorganic materials 0.000 claims description 222
- 239000010703 silicon Substances 0.000 claims description 222
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 103
- 238000010438 heat treatment Methods 0.000 claims description 82
- 239000007789 gas Substances 0.000 claims description 79
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 73
- 230000008569 process Effects 0.000 claims description 73
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 73
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 64
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 64
- 238000006243 chemical reaction Methods 0.000 claims description 61
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 60
- 229910052698 phosphorus Inorganic materials 0.000 claims description 60
- 239000011574 phosphorus Substances 0.000 claims description 60
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 35
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 27
- 229910021332 silicide Inorganic materials 0.000 claims description 26
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 26
- 150000003376 silicon Chemical class 0.000 claims description 19
- 125000004429 atom Chemical group 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 15
- 238000011282 treatment Methods 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 239000012808 vapor phase Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 19
- 239000010408 film Substances 0.000 description 644
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 71
- 229910052814 silicon oxide Inorganic materials 0.000 description 71
- 239000010410 layer Substances 0.000 description 51
- 239000013078 crystal Substances 0.000 description 32
- 230000002093 peripheral effect Effects 0.000 description 32
- 229920005591 polysilicon Polymers 0.000 description 24
- 238000012545 processing Methods 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000012071 phase Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000004913 activation Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Landscapes
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11192009A JP2001024165A (ja) | 1999-07-06 | 1999-07-06 | 半導体装置およびその製造方法ならびに半導体製造装置 |
| JP99-192009 | 1999-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010029868A true KR20010029868A (ko) | 2001-04-16 |
Family
ID=16284096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000036702A Ceased KR20010029868A (ko) | 1999-07-06 | 2000-06-30 | 반도체 집적회로장치 및 그 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6632721B1 (https=) |
| JP (1) | JP2001024165A (https=) |
| KR (1) | KR20010029868A (https=) |
| TW (1) | TW557568B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003037172A (ja) * | 2001-07-23 | 2003-02-07 | Niigata Seimitsu Kk | アナログ・デジタル混載集積回路 |
| KR100399940B1 (ko) * | 2001-12-29 | 2003-09-29 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 캐패시터 제조방법 |
| US7189606B2 (en) * | 2002-06-05 | 2007-03-13 | Micron Technology, Inc. | Method of forming fully-depleted (FD) SOI MOSFET access transistor |
| KR100520600B1 (ko) * | 2003-02-17 | 2005-10-10 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
| KR100681274B1 (ko) * | 2004-11-25 | 2007-02-09 | 삼성전자주식회사 | 커패시터 및 그 제조 방법 |
| JP2006324363A (ja) * | 2005-05-17 | 2006-11-30 | Elpida Memory Inc | キャパシタおよびその製造方法 |
| US8189376B2 (en) * | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
| CN102222606B (zh) * | 2010-04-14 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 一种电容的形成方法 |
| US8642440B2 (en) | 2011-10-24 | 2014-02-04 | International Business Machines Corporation | Capacitor with deep trench ion implantation |
| WO2013116335A1 (en) * | 2012-01-30 | 2013-08-08 | First Solar, Inc | Method and apparatus for producing a transparent conductive oxide |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0168770B1 (ko) * | 1994-11-24 | 1999-01-15 | 김주용 | 조대한 입자구조의 폴리실리콘 박막을 갖는 반도체 소자 제조 방법 |
| KR19990013845A (ko) * | 1997-07-15 | 1999-02-25 | 가네꼬 히사시 | 반도체 장치의 제조방법 |
| KR19990032975A (ko) * | 1997-10-22 | 1999-05-15 | 윤종용 | 미세한 굴곡이 형성된 하부전극을 구비한 반도체장치의 커패시터 제조방법 |
| KR19990045170A (ko) * | 1997-11-16 | 1999-06-25 | 니시히라 순지 | 요철상 폴리실리콘층의 형성방법 및 이 방법의 실시에 사용되는기판처리장치와 반도체 메모리디바이스 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314774A (ja) | 1993-04-28 | 1994-11-08 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH0786434A (ja) | 1993-09-17 | 1995-03-31 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5639685A (en) * | 1995-10-06 | 1997-06-17 | Micron Technology, Inc. | Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon |
| US6069053A (en) * | 1997-02-28 | 2000-05-30 | Micron Technology, Inc. | Formation of conductive rugged silicon |
| US6197653B1 (en) * | 1997-03-27 | 2001-03-06 | Texas Instruments Incorporated | Capacitor and memory structure and method |
| US6218260B1 (en) * | 1997-04-22 | 2001-04-17 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
| JP3542704B2 (ja) * | 1997-10-24 | 2004-07-14 | シャープ株式会社 | 半導体メモリ素子 |
| JP2000012783A (ja) * | 1998-06-22 | 2000-01-14 | Nippon Asm Kk | 半導体素子の製造方法 |
| US5913119A (en) * | 1998-06-26 | 1999-06-15 | Vanguard Int Semiconduct Corp | Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure |
| US6177696B1 (en) * | 1998-08-13 | 2001-01-23 | International Business Machines Corporation | Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices |
| JP3242901B2 (ja) * | 1999-06-18 | 2001-12-25 | 日本エー・エス・エム株式会社 | 半導体形成方法及び装置 |
-
1999
- 1999-07-06 JP JP11192009A patent/JP2001024165A/ja active Pending
-
2000
- 2000-06-14 TW TW089111653A patent/TW557568B/zh active
- 2000-06-23 US US09/602,887 patent/US6632721B1/en not_active Expired - Fee Related
- 2000-06-30 KR KR1020000036702A patent/KR20010029868A/ko not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0168770B1 (ko) * | 1994-11-24 | 1999-01-15 | 김주용 | 조대한 입자구조의 폴리실리콘 박막을 갖는 반도체 소자 제조 방법 |
| KR19990013845A (ko) * | 1997-07-15 | 1999-02-25 | 가네꼬 히사시 | 반도체 장치의 제조방법 |
| KR19990032975A (ko) * | 1997-10-22 | 1999-05-15 | 윤종용 | 미세한 굴곡이 형성된 하부전극을 구비한 반도체장치의 커패시터 제조방법 |
| KR19990045170A (ko) * | 1997-11-16 | 1999-06-25 | 니시히라 순지 | 요철상 폴리실리콘층의 형성방법 및 이 방법의 실시에 사용되는기판처리장치와 반도체 메모리디바이스 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001024165A (ja) | 2001-01-26 |
| US6632721B1 (en) | 2003-10-14 |
| TW557568B (en) | 2003-10-11 |
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