KR20010014314A - 화학 기상 증착 챔버에서 플라즈마 예비처리를 통한질화텅스텐의 개선된 증착 - Google Patents

화학 기상 증착 챔버에서 플라즈마 예비처리를 통한질화텅스텐의 개선된 증착 Download PDF

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Publication number
KR20010014314A
KR20010014314A KR1019997012452A KR19997012452A KR20010014314A KR 20010014314 A KR20010014314 A KR 20010014314A KR 1019997012452 A KR1019997012452 A KR 1019997012452A KR 19997012452 A KR19997012452 A KR 19997012452A KR 20010014314 A KR20010014314 A KR 20010014314A
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South Korea
Prior art keywords
gas
tungsten nitride
gas composition
hydrogen
sccm
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KR1019997012452A
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English (en)
Korean (ko)
Inventor
링 첸
세샤드리 갱굴리
알프레드 마크
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US08/884,811 external-priority patent/US6309713B1/en
Application filed by 조셉 제이. 스위니, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 조셉 제이. 스위니
Publication of KR20010014314A publication Critical patent/KR20010014314A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019997012452A 1997-06-30 1998-06-26 화학 기상 증착 챔버에서 플라즈마 예비처리를 통한질화텅스텐의 개선된 증착 Withdrawn KR20010014314A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/884,811 US6309713B1 (en) 1997-06-30 1997-06-30 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
US08/884,811 1997-06-30
US09/067,429 1998-04-27
US09/067,429 US6872429B1 (en) 1997-06-30 1998-04-27 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber

Publications (1)

Publication Number Publication Date
KR20010014314A true KR20010014314A (ko) 2001-02-26

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Application Number Title Priority Date Filing Date
KR1019997012452A Withdrawn KR20010014314A (ko) 1997-06-30 1998-06-26 화학 기상 증착 챔버에서 플라즈마 예비처리를 통한질화텅스텐의 개선된 증착

Country Status (6)

Country Link
US (1) US6872429B1 (https=)
EP (1) EP0996973A1 (https=)
JP (1) JP4675439B2 (https=)
KR (1) KR20010014314A (https=)
TW (1) TW432529B (https=)
WO (1) WO1999000830A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150257A (en) * 1998-08-28 2000-11-21 Micron Technology, Inc. Plasma treatment of an interconnect surface during formation of an interlayer dielectric
US6355571B1 (en) * 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
KR101035221B1 (ko) * 2002-12-27 2011-05-18 가부시키가이샤 알박 질화 텅스텐막의 형성 방법
US7311946B2 (en) 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
JP2006156716A (ja) * 2004-11-30 2006-06-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4738178B2 (ja) * 2005-06-17 2011-08-03 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4608530B2 (ja) * 2007-09-07 2011-01-12 株式会社アルバック バリア膜製造方法
JP2010010624A (ja) * 2008-06-30 2010-01-14 Ulvac Japan Ltd 半導体装置の製造装置及び半導体装置の製造方法
JP5925476B2 (ja) * 2011-12-09 2016-05-25 株式会社アルバック タングステン化合物膜の形成方法
US9275865B2 (en) 2012-10-31 2016-03-01 Applied Materials, Inc. Plasma treatment of film for impurity removal
US10622214B2 (en) * 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102569956B1 (ko) * 2017-07-25 2023-08-22 어플라이드 머티어리얼스, 인코포레이티드 개선된 박막 캡슐화
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN111936664A (zh) 2018-03-19 2020-11-13 应用材料公司 在航空航天部件上沉积涂层的方法
US11015252B2 (en) 2018-04-27 2021-05-25 Applied Materials, Inc. Protection of components from corrosion
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US10636705B1 (en) 2018-11-29 2020-04-28 Applied Materials, Inc. High pressure annealing of metal gate structures
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
CN115734826A (zh) 2020-07-03 2023-03-03 应用材料公司 用于翻新航空部件的方法
US11976002B2 (en) 2021-01-05 2024-05-07 Applied Materials, Inc. Methods for encapsulating silver mirrors on optical structures
CN112938910B (zh) * 2021-04-16 2022-09-20 中国检验检疫科学研究院 一种薄片状氮化钨纳米材料的合成方法及应用

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2571542B1 (fr) * 1984-10-09 1987-01-23 Labo Electronique Physique Procede de realisation d'un dispositif semiconducteur incluant l'action de plasma
EP0261846B1 (en) * 1986-09-17 1992-12-02 Fujitsu Limited Method of forming a metallization film containing copper on the surface of a semiconductor device
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
US4751101A (en) * 1987-04-30 1988-06-14 International Business Machines Corporation Low stress tungsten films by silicon reduction of WF6
JPS63317676A (ja) 1987-06-19 1988-12-26 Sharp Corp 無粒構造金属化合物薄膜の製造方法
JPS645015A (en) 1987-06-26 1989-01-10 Sharp Kk Manufacture of integrated circuit element
US4847111A (en) * 1988-06-30 1989-07-11 Hughes Aircraft Company Plasma-nitridated self-aligned tungsten system for VLSI interconnections
KR940000906B1 (ko) * 1988-11-21 1994-02-04 가부시키가이샤 도시바 반도체장치의 제조방법
US5232872A (en) 1989-05-09 1993-08-03 Fujitsu Limited Method for manufacturing semiconductor device
IT1241922B (it) 1990-03-09 1994-02-01 Eniricerche Spa Procedimento per realizzare rivestimenti di carburo di silicio
KR100228259B1 (ko) 1990-10-24 1999-11-01 고지마 마따오 박막의 형성방법 및 반도체장치
US5250467A (en) 1991-03-29 1993-10-05 Applied Materials, Inc. Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer
KR930011538B1 (ko) * 1991-07-16 1993-12-10 한국과학기술연구원 실리콘 반도체소자의 금속배선 형성용 텅스텐 질화박막 증착방법
WO1994004716A1 (en) * 1992-08-14 1994-03-03 Hughes Aircraft Company Surface preparation and deposition method for titanium nitride onto carbonaceous materials
JPH07142416A (ja) 1993-06-21 1995-06-02 Applied Materials Inc 改良された界面を有する層のプラズマ化学蒸着法
WO1995034092A1 (en) 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
JPH0869994A (ja) * 1994-08-30 1996-03-12 Fujitsu Ltd 半導体装置の製造方法
US5576071A (en) * 1994-11-08 1996-11-19 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
EP0711846A1 (en) 1994-11-14 1996-05-15 Applied Materials, Inc. Titanium nitride deposited by chemical vapor deposition
JP2978748B2 (ja) * 1995-11-22 1999-11-15 日本電気株式会社 半導体装置の製造方法
US6009827A (en) 1995-12-06 2000-01-04 Applied Materials, Inc. Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films
US5648175A (en) * 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US5633200A (en) * 1996-05-24 1997-05-27 Micron Technology, Inc. Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer
TW365685B (en) * 1996-10-31 1999-08-01 Texas Instruments Inc Low-temperature processes for depositing barrier films containing tungsten and nitrogen
EP0841690B1 (en) * 1996-11-12 2006-03-01 Samsung Electronics Co., Ltd. Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method
US6162715A (en) * 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method

Also Published As

Publication number Publication date
TW432529B (en) 2001-05-01
US6872429B1 (en) 2005-03-29
JP2002507327A (ja) 2002-03-05
JP4675439B2 (ja) 2011-04-20
WO1999000830A1 (en) 1999-01-07
EP0996973A1 (en) 2000-05-03

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