KR20000058107A - 포토레지스트 회분 잔류물의 제거방법 - Google Patents
포토레지스트 회분 잔류물의 제거방법 Download PDFInfo
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- KR20000058107A KR20000058107A KR1020000007834A KR20000007834A KR20000058107A KR 20000058107 A KR20000058107 A KR 20000058107A KR 1020000007834 A KR1020000007834 A KR 1020000007834A KR 20000007834 A KR20000007834 A KR 20000007834A KR 20000058107 A KR20000058107 A KR 20000058107A
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- Prior art keywords
- residue
- gas
- ammonia
- photoresist
- vapor
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 27
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000005855 radiation Effects 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 15
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 8
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 150000001412 amines Chemical class 0.000 claims abstract description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 4
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 4
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 claims abstract description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- 150000003573 thiols Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005530 etching Methods 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 208000032484 Accidental exposure to product Diseases 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 231100000818 accidental exposure Toxicity 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000176 photostabilization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012048 reactive intermediate Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D17/00—Rigid or semi-rigid containers specially constructed to be opened by cutting or piercing, or by tearing of frangible members or portions
- B65D17/28—Rigid or semi-rigid containers specially constructed to be opened by cutting or piercing, or by tearing of frangible members or portions at lines or points of weakness
- B65D17/401—Rigid or semi-rigid containers specially constructed to be opened by cutting or piercing, or by tearing of frangible members or portions at lines or points of weakness characterised by having the line of weakness provided in an end wall
- B65D17/4011—Rigid or semi-rigid containers specially constructed to be opened by cutting or piercing, or by tearing of frangible members or portions at lines or points of weakness characterised by having the line of weakness provided in an end wall for opening completely by means of a tearing tab
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D1/00—Containers having bodies formed in one piece, e.g. by casting metallic material, by moulding plastics, by blowing vitreous material, by throwing ceramic material, by moulding pulped fibrous material, by deep-drawing operations performed on sheet material
- B65D1/12—Cans, casks, barrels, or drums
- B65D1/14—Cans, casks, barrels, or drums characterised by shape
- B65D1/16—Cans, casks, barrels, or drums characterised by shape of curved cross-section, e.g. cylindrical
- B65D1/165—Cylindrical cans
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D43/00—Lids or covers for rigid or semi-rigid containers
- B65D43/02—Removable lids or covers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D51/00—Closures not otherwise provided for
- B65D51/002—Closures to be pierced by an extracting-device for the contents and fixed on the container by separate retaining means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D85/00—Containers, packaging elements or packages, specially adapted for particular articles or materials
- B65D85/70—Containers, packaging elements or packages, specially adapted for particular articles or materials for materials not otherwise provided for
- B65D85/72—Containers, packaging elements or packages, specially adapted for particular articles or materials for materials not otherwise provided for for edible or potable liquids, semiliquids, or plastic or pasty materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2313/00—Connecting or fastening means
- B65D2313/08—Double sided adhesive tape, e.g. for suspension of the container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2517/00—Containers specially constructed to be opened by cutting, piercing or tearing of wall portions, e.g. preserving cans or tins
- B65D2517/0001—Details
- B65D2517/0031—Reclosable openings
- B65D2517/004—Reclosable openings by means of an additional element
- B65D2517/0041—Reclosable openings by means of an additional element in the form of a cover
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (17)
- 기재의 온도를 실온보다 높게 유지하면서, 잔류물이 반응하는 가스 및/또는 증기를 잔류물에 가하는 단계와, 이 잔류물을 자외선 복사에 충분한 시간동안 노출시켜 잔류물을 휘발시키거나 혹은 잔류물을 탈이온수로 충분히 제거가능한 친수성으로 하는 단계를 포함하는, 반도체 기재로부터 플루오르 함유 잔류물의 제거방법.
- 제1항에 있어서, 가스 및 증기는, 아민류, 알코올류, 티올류, 암모니아, 이산화황, 이산화황과 산소, 삼산화황, 황화 수소, 이산화 탄소, 일산화 탄소, 이황화 탄소, 황화 카르보닐, 과산화 수소 및 물로 된 군으로부터 선택되는 1종 이상인 제거방법.
- 제2항에 있어서, 잔류물을 자외선 복사로 블랭키팅함으로써 잔류물을 자외선 복사에 노출시키는 제거방법.
- 제3항에 있어서, 가스 및/또는 증기를 가하기전에 포토레지스트에 대하여 회분화 공정을 실시하는 제거방법.
- 제4항에 있어서, 가스 및/또는 증기가 암모니아, 수소 및 이산화황으로 된 군으로부터 선택되는 제거방법.
- 제2항에 있어서, 가스 및/또는 증기를 가한후에 기재를 탈이온수로 세정하는 제거방법.
- 제4항에 있어서, 가스 및/또는 증기를 가한후에 기재를 탈이온수로 세정하는 제거방법.
- 제7항에 있어서, 가스 또는 증기가 암모니아인 제거방법.
- 제8항에 있어서, 암모니아를 질소와 혼합하는 제거방법.
- 제9항에 있어서, 암모니아와 질소의 혼합물을 대기압하에서 가하는 제거방법.
- 1) 웨이퍼를 포토레지스트로 코우팅하는 단계와,2) 자외선 복사에 의하여 포토레지스트에 패턴을 형성하는 단계와,3) 이 포토레지스트를 현상하는 단계와,4) 포토레지스트를 딱딱하게 경화시키거나 안정화하는 단계와,5) 웨이퍼위에 집적회로 부품을 형성하는 단계와,가) 잔류물을 제외한 포토레지스트를 제거하는, 포토레지스트에 대한 회분화 공정을 실시하고,나) 기재의 온도를 실온보다 높게 유지하면서, 아민류, 알코올류, 티올류, 암모니아, 이산화황, 이산화황과 산소, 삼산화황, 황화 수소, 이산화 탄소, 일산화 탄소, 이황화 탄소, 황화 카르보닐, 과산화 수소 및 물로 된 군으로부터 선택되는 가스 및/또는 증기를 잔류물에 가하고, 이 잔류물을 자외선 복사로써 충분한 시간동안 노출시켜 잔류물을 휘발시키거나 혹은 잔류물을 탈이온수로 충분히 제거가능한 친수성으로 함으로써 잔류물을 제거하여 웨이퍼로부터 포토레지스트를 제거하는 단계를 포함하는 반도체 웨이퍼의 처리방법.
- 제11항에 있어서, 가스를 가한 후에 기재를 탈이온수로 세정하는 처리방법.
- 제11항에 있어서, 가스가 암모니아, 수소 및 이산화황으로 된 군으로부터 선택되는 1종 이상을 포함하는 처리방법.
- 제13항에 있어서, 가스를 가한 후에 기재를 탈이온수로 세정하는 처리방법.
- 제14항에 있어서, 가스가 암모니아인 처리방법.
- 제15항에 있어서, 암모니아를 질소와 혼합하는 처리방법.
- 제16항에 있어서, 암모니아와 질소의 혼합물을 대기압하에서 가하는 처리방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12086699P | 1999-02-19 | 1999-02-19 | |
US60/120,866 | 1999-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000058107A true KR20000058107A (ko) | 2000-09-25 |
KR100544970B1 KR100544970B1 (ko) | 2006-01-24 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020000007834A KR100544970B1 (ko) | 1999-02-19 | 2000-02-18 | 포토레지스트 애시 잔류물의 제거 방법 |
Country Status (4)
Country | Link |
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EP (1) | EP1032026B1 (ko) |
JP (1) | JP2000241992A (ko) |
KR (1) | KR100544970B1 (ko) |
DE (1) | DE60040252D1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030025174A (ko) * | 2001-09-19 | 2003-03-28 | 엔이씨 일렉트로닉스 코포레이션 | N₂플라즈마기체 및 n₂/h₂플라즈마기체의 두 단계에싱과정을 포함한 반도체장치 제조방법 |
KR100474594B1 (ko) * | 2002-08-28 | 2005-03-10 | 주식회사 하이닉스반도체 | 반도체 소자의 세정방법 |
KR100772125B1 (ko) * | 2002-06-26 | 2007-10-31 | 이유브이 리미티드 라이어빌러티 코포레이션 | 방사 주입된 표면 오염을 감소시키는 공정 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7875419B2 (en) | 2002-10-29 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing resist pattern and method for manufacturing semiconductor device |
JP2005159294A (ja) | 2003-09-18 | 2005-06-16 | Nec Kagoshima Ltd | 基板処理方法及びそれに用いる薬液 |
JP5207728B2 (ja) * | 2006-12-21 | 2013-06-12 | 富士フイルム株式会社 | 導電膜およびその製造方法 |
JP2013030625A (ja) * | 2011-07-28 | 2013-02-07 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及び処理装置 |
CN111009459B (zh) * | 2019-12-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 含氟残留物去除方法、刻蚀方法和氧化层清洗方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01274426A (ja) * | 1988-04-26 | 1989-11-02 | Mitsubishi Electric Corp | 半導体装置製造のポジレジスト除去方法 |
JP2853211B2 (ja) * | 1989-11-01 | 1999-02-03 | 富士通株式会社 | 半導体装置の製造方法 |
JPH0410622A (ja) * | 1990-04-27 | 1992-01-14 | Tokyo Electron Ltd | ドライ洗浄装置 |
JPH0475323A (ja) * | 1990-07-17 | 1992-03-10 | Seiko Epson Corp | レジスト除去法 |
AU7682594A (en) * | 1993-09-08 | 1995-03-27 | Uvtech Systems, Inc. | Surface processing |
US5814156A (en) * | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
KR19980068184A (ko) * | 1997-02-17 | 1998-10-15 | 김광호 | 반도체장치 제조공정의 포토레지스트 제거방법 |
JPH10289891A (ja) * | 1997-04-11 | 1998-10-27 | Mitsubishi Gas Chem Co Inc | 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法 |
US5849639A (en) * | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
KR20000004232A (ko) * | 1998-06-30 | 2000-01-25 | 김영환 | 반도체 소자의 콘택 홀 형성 방법 |
-
2000
- 2000-02-17 EP EP00301234A patent/EP1032026B1/en not_active Expired - Lifetime
- 2000-02-17 DE DE60040252T patent/DE60040252D1/de not_active Expired - Lifetime
- 2000-02-18 KR KR1020000007834A patent/KR100544970B1/ko active IP Right Grant
- 2000-02-21 JP JP2000042903A patent/JP2000241992A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030025174A (ko) * | 2001-09-19 | 2003-03-28 | 엔이씨 일렉트로닉스 코포레이션 | N₂플라즈마기체 및 n₂/h₂플라즈마기체의 두 단계에싱과정을 포함한 반도체장치 제조방법 |
KR100772125B1 (ko) * | 2002-06-26 | 2007-10-31 | 이유브이 리미티드 라이어빌러티 코포레이션 | 방사 주입된 표면 오염을 감소시키는 공정 |
KR100474594B1 (ko) * | 2002-08-28 | 2005-03-10 | 주식회사 하이닉스반도체 | 반도체 소자의 세정방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2000241992A (ja) | 2000-09-08 |
EP1032026A2 (en) | 2000-08-30 |
EP1032026A3 (en) | 2001-01-03 |
DE60040252D1 (de) | 2008-10-30 |
EP1032026B1 (en) | 2008-09-17 |
KR100544970B1 (ko) | 2006-01-24 |
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