KR20000045309A - 박막 트랜지스터 액정표시소자 - Google Patents
박막 트랜지스터 액정표시소자 Download PDFInfo
- Publication number
- KR20000045309A KR20000045309A KR1019980061867A KR19980061867A KR20000045309A KR 20000045309 A KR20000045309 A KR 20000045309A KR 1019980061867 A KR1019980061867 A KR 1019980061867A KR 19980061867 A KR19980061867 A KR 19980061867A KR 20000045309 A KR20000045309 A KR 20000045309A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- electrode
- line
- pixel
- liquid crystal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (3)
- 수직·교차하는 수 개의 게이트 라인 및 데이터 라인; 상기 한 쌍의 게이트 라인과 한 쌍의 데이터 라인에 의해 한정된 화소영역 내에 구비된 화소전극; 및 각각의 화소영역에 구비되는 박막 트랜지스터를 포함하여 이루어지는 박막 트랜지스터 액정표시소자로서,상기 게이트 라인은 화소영역을 향하는 측면 부분에 함몰부가 구비되어 있고,상기 화소전극은 상기 게이트 라인의 함몰부 내에 상기 게이트 라인과 이격되어 배치되는 돌출부가 구비되어 있으며,상기 박막 트랜지스터는 함몰부를 포함한 게이트 라인의 일부분인 게이트 전극과, 상기 게이트 전극의 함몰부에 삽입되어져 소오스 전극의 기능을 하는 화소전극의 돌출부, 상기 화소전극의 돌출부 상에 적층된 제1오믹층, 반도체층 및 제2오믹층, 및, 상기 데이터 라인으로부터 인출되어져 상기 제2오믹층 상에 배치되는 드레인 전극을 포함하여 이루어지며, 상기 게이트 전극과 인접하는 반도체층의 세 면에 각각 수직 방향으로 채널 영역이 형성되는 것을 특징으로 하는 박막 트랜지스터 액정표시소자.
- 제 1 항에 있어서, 상기 제1오믹층, 반도체층 및 제2오믹층의 두께 합은 상기 게이트 라인의 두께와 같거나, 또는, 작은 것을 특징으로 하는 박막 트랜지스터 액정표시소자.
- 제 1 항에 있어서, 상기 데이터 라인과 이격되어 게이트 절연막 상에 형성된 스토리지 전극 라인을 더 포함하는 것을 특징으로 하는 박막 트랜지스터 액정표시소자.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980061867A KR100542310B1 (ko) | 1998-12-30 | 1998-12-30 | 박막 트랜지스터 액정표시소자_ |
JP36853299A JP3941032B2 (ja) | 1998-12-30 | 1999-12-27 | 垂直薄膜トランジスタを有する薄膜トランジスタ液晶表示素子 |
US09/473,470 US6320221B1 (en) | 1998-12-30 | 1999-12-28 | TFT-LCD having a vertical thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980061867A KR100542310B1 (ko) | 1998-12-30 | 1998-12-30 | 박막 트랜지스터 액정표시소자_ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000045309A true KR20000045309A (ko) | 2000-07-15 |
KR100542310B1 KR100542310B1 (ko) | 2006-05-09 |
Family
ID=19568564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980061867A KR100542310B1 (ko) | 1998-12-30 | 1998-12-30 | 박막 트랜지스터 액정표시소자_ |
Country Status (3)
Country | Link |
---|---|
US (1) | US6320221B1 (ko) |
JP (1) | JP3941032B2 (ko) |
KR (1) | KR100542310B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100626036B1 (ko) * | 2004-11-17 | 2006-09-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 상기 유기 발광 소자의 제조방법 |
KR100769296B1 (ko) * | 2001-03-15 | 2007-10-24 | 다이니폰 인사츠 가부시키가이샤 | 액정표시장치용의 전극기판과 그 제조방법 및, 액정표시장치 |
KR20180085404A (ko) * | 2017-01-18 | 2018-07-27 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 |
KR20230154415A (ko) * | 2016-04-12 | 2023-11-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
Families Citing this family (27)
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JP2001177103A (ja) * | 1999-12-20 | 2001-06-29 | Sony Corp | 薄膜半導体装置及び表示装置とその製造方法 |
KR100370800B1 (ko) * | 2000-06-09 | 2003-02-05 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제작방법 |
US6734924B2 (en) * | 2000-09-08 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR100475108B1 (ko) | 2001-12-22 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조 방법 |
KR100494702B1 (ko) * | 2001-12-26 | 2005-06-13 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 스위칭 액정표시장치 |
KR100796493B1 (ko) * | 2001-12-29 | 2008-01-21 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 |
KR100491821B1 (ko) * | 2002-05-23 | 2005-05-27 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
TW595005B (en) * | 2003-08-04 | 2004-06-21 | Au Optronics Corp | Thin film transistor and pixel structure with the same |
KR101090245B1 (ko) * | 2003-12-10 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7667250B2 (en) * | 2004-07-16 | 2010-02-23 | Aptina Imaging Corporation | Vertical gate device for an image sensor and method of forming the same |
TWI271870B (en) * | 2005-10-24 | 2007-01-21 | Chunghwa Picture Tubes Ltd | Thin film transistor, pixel structure and repairing method thereof |
TWI300251B (en) * | 2006-07-14 | 2008-08-21 | Ind Tech Res Inst | Manufacturing method of vertical thin film transistor |
CN101435962B (zh) * | 2007-11-15 | 2010-09-22 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板结构及其制造方法 |
TW201111884A (en) | 2009-09-17 | 2011-04-01 | Chunghwa Picture Tubes Ltd | Pixel array |
TWI402596B (zh) * | 2009-10-01 | 2013-07-21 | Chunghwa Picture Tubes Ltd | 具有電容補償的畫素結構 |
WO2011052409A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
TWI476931B (zh) * | 2010-10-21 | 2015-03-11 | Au Optronics Corp | 薄膜電晶體與具有此薄膜電晶體的畫素結構 |
US8669552B2 (en) | 2011-03-02 | 2014-03-11 | Applied Materials, Inc. | Offset electrode TFT structure |
CN102338955B (zh) * | 2011-08-08 | 2013-11-06 | 深圳市华星光电技术有限公司 | 薄膜晶体管像素单元 |
KR101903565B1 (ko) | 2011-10-13 | 2018-10-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
CN103309105B (zh) * | 2013-07-05 | 2016-02-03 | 北京京东方光电科技有限公司 | 阵列基板及其制备方法、显示装置 |
CN103413812B (zh) * | 2013-07-24 | 2016-08-17 | 北京京东方光电科技有限公司 | 阵列基板及其制备方法、显示装置 |
KR102130545B1 (ko) * | 2013-11-27 | 2020-07-07 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN105097832B (zh) * | 2015-06-25 | 2018-09-11 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
US10782580B2 (en) | 2016-04-29 | 2020-09-22 | Samsung Display Co., Ltd. | Array substrate, liquid crystal display device having the same, and method for manufacturing array substrate |
KR102576428B1 (ko) | 2016-04-29 | 2023-09-08 | 삼성디스플레이 주식회사 | 어레이 기판, 이를 포함하는 액정 표시 장치 및 어레이 기판의 제조 방법 |
CN106169485B (zh) * | 2016-08-31 | 2019-06-14 | 深圳市华星光电技术有限公司 | Tft阵列基板及其制作方法、显示装置 |
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KR940018962A (ko) | 1993-01-29 | 1994-08-19 | 이헌조 | 알루미나를 이용한 수직형 박막 트랜지스터 제조방법 |
JPH07297406A (ja) | 1994-04-21 | 1995-11-10 | Tdk Corp | 縦型薄膜半導体装置 |
US5512517A (en) * | 1995-04-25 | 1996-04-30 | International Business Machines Corporation | Self-aligned gate sidewall spacer in a corrugated FET and method of making same |
KR0165398B1 (ko) * | 1995-05-26 | 1998-12-15 | 윤종용 | 버티칼 트랜지스터의 제조방법 |
US5668391A (en) | 1995-08-02 | 1997-09-16 | Lg Semicon Co., Ltd. | Vertical thin film transistor |
GB9626487D0 (en) * | 1996-12-17 | 1997-02-05 | Philips Electronics Nv | Electronic devices and their manufacture |
-
1998
- 1998-12-30 KR KR1019980061867A patent/KR100542310B1/ko not_active IP Right Cessation
-
1999
- 1999-12-27 JP JP36853299A patent/JP3941032B2/ja not_active Expired - Lifetime
- 1999-12-28 US US09/473,470 patent/US6320221B1/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100769296B1 (ko) * | 2001-03-15 | 2007-10-24 | 다이니폰 인사츠 가부시키가이샤 | 액정표시장치용의 전극기판과 그 제조방법 및, 액정표시장치 |
KR100626036B1 (ko) * | 2004-11-17 | 2006-09-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 상기 유기 발광 소자의 제조방법 |
KR20230154415A (ko) * | 2016-04-12 | 2023-11-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
KR20180085404A (ko) * | 2017-01-18 | 2018-07-27 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 |
Also Published As
Publication number | Publication date |
---|---|
US6320221B1 (en) | 2001-11-20 |
JP3941032B2 (ja) | 2007-07-04 |
KR100542310B1 (ko) | 2006-05-09 |
JP2000196104A (ja) | 2000-07-14 |
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