KR19990063063A - 반도체웨이퍼를 고정하고 떼어내는 방법 및 이 방법을 실행하기에 적합한 물질혼합물 - Google Patents
반도체웨이퍼를 고정하고 떼어내는 방법 및 이 방법을 실행하기에 적합한 물질혼합물 Download PDFInfo
- Publication number
- KR19990063063A KR19990063063A KR1019980055025A KR19980055025A KR19990063063A KR 19990063063 A KR19990063063 A KR 19990063063A KR 1019980055025 A KR1019980055025 A KR 1019980055025A KR 19980055025 A KR19980055025 A KR 19980055025A KR 19990063063 A KR19990063063 A KR 19990063063A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor wafer
- resin
- water
- esterified
- fixing
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 20
- 235000012431 wafers Nutrition 0.000 title abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 11
- 230000001419 dependent effect Effects 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 claims description 15
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 claims description 14
- 150000001412 amines Chemical class 0.000 claims description 8
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 239000000975 dye Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043276 diisopropanolamine Drugs 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 2
- 239000013589 supplement Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000007787 solid Substances 0.000 description 5
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 4
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 2
- 229940043267 rhodamine b Drugs 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 235000012544 Viola sororia Nutrition 0.000 description 1
- 241001106476 Violaceae Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000989 food dye Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000003784 tall oil Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
Claims (8)
- 반도체웨이퍼를 고정 및 떼어내는 방법에 있어서, 온도종속된 접착 및 경화이음이 화학적으로 변성되고 에스테르화된 콜로포늄수지를 함유한 물질혼합물에 의하여 반도체웨이퍼와 캐리어판간에 제공되며, 그 경화이음은 반도체웨이퍼의 연마후 다시 해제됨을 특징으로 하는 반도체웨이퍼를 고정 및 떼어내는 방법.
- 제 1 항에 있어서,물질혼합물은 건조상태에서 45~85℃의 온도범위내에서만 전개되는 점착작용을 가진 것을 특징으로 하는 반도체웨이퍼를 고정 및 떼어내는 방법.
- 제 1 항에 있어서,경화이음은 캐리어판 또는 반도체웨이퍼상에 남아 있는 이음의 잔류물 없이 물에 의해 해제되는 것을 특징으로 하는 반도체웨이퍼를 고정 및 떼어내는 방법.
- 건조상태에서 온도종속되게 접착되고 경화되며, 또 화학적으로 변성되고 에스테르화된 콜로포늄수지를 함유한 물용해물질혼합물에 있어서, 그 물질혼합물은 콜로포늄수지를 감화하는 공식 NR¹R²R³의 아민을 함유하며, 이때에 적어도 래디컬 R¹, R² 및 R³중의 1개는 지방족알콜의 래디컬이며, 아민의 비등점은 1000mbar의 압력에서 150℃보다 높은 것을 특징으로 하는 물용해물질혼합물.
- 제 4 항에 있어서,상기 아민은 트리에타놀아민, 트리이소프로파놀아민, 디이소프로파놀아민 및 디에타놀아민으로 구성된 그룹에서 선정되는 것을 특징으로 하는 물용해물질혼합물.
- 제 4 항에 있어서,상기 콜로포늄수지는 말레인산, 말레인산무수물 및 프마르산으로 구성된 그룹에서 선정된 화합물과 반응하여 화학적으로 변성되는 것을 특징으로 하는 물용해물질혼합물.
- 제 4 항에 있어서,상기 콜로포늄수지는 그리세롤 및 펜타에리트리톨로 구성된 그룹에서 선정된 알콜에 의해 에스테르화되는 것을 특징으로 하는 물용해물질혼합물.
- 제 4 항에 있어서,상기 물질혼합물은 다음과 같은 조성물을 가진 것을 특징으로 하는 물용해물질혼합물:화학적으로 변성되고 에스테르화된 15~20wt%의 콜로포늄수지;5~10wt%의 트리에타놀아민;2wt%까지의 비이온 계면활성제;10wt%까지의 알콜가용화제;0.05wt%까지의 염료;100wt%로 수량표시된 합계를 보충하는 량의 물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19756614.6 | 1997-12-18 | ||
DE19756614A DE19756614A1 (de) | 1997-12-18 | 1997-12-18 | Verfahren zur Montage und Demontage einer Halbleiterscheibe, und Stoffmischung, die zur Durchführung des Verfahrens geeignet ist |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990063063A true KR19990063063A (ko) | 1999-07-26 |
KR100284583B1 KR100284583B1 (ko) | 2001-11-02 |
Family
ID=7852573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980055025A KR100284583B1 (ko) | 1997-12-18 | 1998-12-15 | 반도체웨이퍼를 고정하고 떼어내는 방법 및 이 방법을 실행하기에 적합한 물질혼합물 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6171385B1 (ko) |
EP (1) | EP0924759B1 (ko) |
JP (1) | JP3032973B2 (ko) |
KR (1) | KR100284583B1 (ko) |
DE (2) | DE19756614A1 (ko) |
SG (1) | SG67579A1 (ko) |
TW (1) | TW414998B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10031139C2 (de) * | 2000-06-27 | 2003-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Stoffmischung zur Montage und Demontage von Halbleiterscheiben |
DE10052293A1 (de) * | 2000-10-20 | 2002-04-25 | B L E Lab Equipment Gmbh | Verfahren zum Aufbringen eines Substrats |
DE10054159A1 (de) * | 2000-11-02 | 2002-05-16 | Wacker Siltronic Halbleitermat | Verfahren zur Montage von Halbleiterscheiben |
DE10139056B4 (de) * | 2001-08-08 | 2005-04-21 | Infineon Technologies Ag | Verfahren zum Dünnen eines scheibenförmigen Gegenstands sowie zur Herstellung eines beidseitig strukturierten Halbleiterbauelements |
US20030092246A1 (en) * | 2001-10-11 | 2003-05-15 | Wanat Stanley F. | Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer |
CN100338166C (zh) * | 2005-11-24 | 2007-09-19 | 深圳职业技术学院 | 一种补漏胶及其制备方法 |
DE102011089362B4 (de) | 2011-12-21 | 2014-01-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
DE102013204839A1 (de) | 2013-03-19 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
DE102013205448A1 (de) | 2013-03-27 | 2014-10-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
WO2014200567A1 (en) | 2013-06-14 | 2014-12-18 | Arizona Chemical Company, Llc | Rosin ester tackifiers for pressure-sensitive adhesives |
DE102013213838A1 (de) | 2013-07-15 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
KR20150011072A (ko) | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
DE102015217109B4 (de) | 2015-09-08 | 2022-08-18 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
CN114634793A (zh) * | 2022-03-23 | 2022-06-17 | 福州硕榕光电有限公司 | 一种光学上盘蜡及其制备方法与应用 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514864B2 (de) | 1965-09-08 | 1971-08-19 | Telefunken Patentverwertungsgesell schaft mbH, 7900 Ulm | Verfahren zum sortieren von halbleiterelementen |
DE2712521C2 (de) | 1977-03-22 | 1987-03-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Aufkitten von Scheiben |
DE3205734A1 (de) * | 1982-02-18 | 1983-08-25 | Henkel KGaA, 4000 Düsseldorf | Kristallisationsinhibitoren fuer tallharze |
CH666899A5 (de) * | 1986-05-09 | 1988-08-31 | Sika Ag | Reaktiver schmelzklebstoff. |
FR2600663B1 (fr) * | 1986-06-27 | 1988-08-05 | Charbonnages Ste Chimique | Compositions pour adhesifs thermofusibles reticulables, les adhesifs correspondants ainsi que leurs procedes de preparation et d'application |
SE9203499L (sv) * | 1992-11-20 | 1994-05-21 | Eka Nobel Ab | Kolofoniumderivat som ytaktivt medel |
EP0601615A1 (en) | 1992-12-08 | 1994-06-15 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device whereby a semiconductor body is temporarily fastened to a further body for a processing operation |
JP3845486B2 (ja) | 1996-02-23 | 2006-11-15 | ザ・インクテック株式会社 | 精密加工用仮着接着剤 |
-
1997
- 1997-12-18 DE DE19756614A patent/DE19756614A1/de not_active Withdrawn
-
1998
- 1998-10-21 JP JP10300007A patent/JP3032973B2/ja not_active Expired - Lifetime
- 1998-10-30 SG SG1998004389A patent/SG67579A1/en unknown
- 1998-12-08 DE DE59800557T patent/DE59800557D1/de not_active Expired - Lifetime
- 1998-12-08 US US09/207,891 patent/US6171385B1/en not_active Expired - Lifetime
- 1998-12-08 EP EP98123049A patent/EP0924759B1/de not_active Expired - Lifetime
- 1998-12-15 KR KR1019980055025A patent/KR100284583B1/ko not_active IP Right Cessation
- 1998-12-16 TW TW087120907A patent/TW414998B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH11238711A (ja) | 1999-08-31 |
SG67579A1 (en) | 1999-09-21 |
TW414998B (en) | 2000-12-11 |
DE59800557D1 (de) | 2001-04-26 |
EP0924759B1 (de) | 2001-03-21 |
DE19756614A1 (de) | 1999-07-01 |
EP0924759A2 (de) | 1999-06-23 |
EP0924759A3 (de) | 1999-09-08 |
KR100284583B1 (ko) | 2001-11-02 |
JP3032973B2 (ja) | 2000-04-17 |
US6171385B1 (en) | 2001-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100284583B1 (ko) | 반도체웨이퍼를 고정하고 떼어내는 방법 및 이 방법을 실행하기에 적합한 물질혼합물 | |
US5907015A (en) | Aqueous silane adhesive compositions | |
CA2198745C (en) | Thermosetting resin compositions containing maleimide and/or vinyl compounds | |
US4413082A (en) | Water-soluble, pressure sensitive, self-adhesive compositions and articles made therewith | |
KR100568039B1 (ko) | 점착제 조성물 및 그의 이용방법 | |
US7309724B2 (en) | Thermosetting resin compositions containing maleimide and/or vinyl compounds | |
CN103184022A (zh) | 用于硅片制备中的暂时性粘合用粘合剂组合物 | |
CN102174296A (zh) | 粘接剂组合物、薄膜、薄片、半导体晶圆、半导体装置 | |
JPS6237046B2 (ko) | ||
FI98308C (fi) | Kiinnitysaine kappaleen kiinnittämiseksi alustaansa | |
TW538083B (en) | Alkali-soluble adhesive | |
KR100251388B1 (ko) | 전사용 코팅수지 유액 조성물 | |
JP4492893B2 (ja) | 液状仮着接着剤 | |
JPH1161079A (ja) | 精密加工用仮着接着剤 | |
JP3845486B2 (ja) | 精密加工用仮着接着剤 | |
JP3624326B2 (ja) | アルカリ可溶性変性樹脂 | |
US2385776A (en) | Abrasive compositions | |
US3118851A (en) | Alkylene oxide adduct of a ketoneformaldehyde reaction product, and mixture thereof with an epoxy resin | |
TWI677543B (zh) | 切片工藝用保護性塗層劑的剝離劑 | |
SU1745731A1 (ru) | Способ получени модифицированных терпеномалеиновых аддуктов дл кле | |
JP2674819B2 (ja) | アルカリ水可溶性ホットメルト型接着剤 | |
JP3467654B2 (ja) | アルカリ可溶性接着剤用樹脂 | |
JP2000297270A (ja) | 固形仮着接着剤 | |
SU897822A1 (ru) | Клеева композици | |
TWI294442B (en) | Self-refluxing and reworkable thermoplastic underfill composition for flip chip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121206 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20131212 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20141211 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20151211 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20161208 Year of fee payment: 17 |
|
FPAY | Annual fee payment |
Payment date: 20171208 Year of fee payment: 18 |
|
EXPY | Expiration of term |