TW414998B - Method of mounting and demounting a semiconductor wafer and substance mixture suitable for carrying out the method - Google Patents

Method of mounting and demounting a semiconductor wafer and substance mixture suitable for carrying out the method Download PDF

Info

Publication number
TW414998B
TW414998B TW087120907A TW87120907A TW414998B TW 414998 B TW414998 B TW 414998B TW 087120907 A TW087120907 A TW 087120907A TW 87120907 A TW87120907 A TW 87120907A TW 414998 B TW414998 B TW 414998B
Authority
TW
Taiwan
Prior art keywords
substance mixture
semiconductor wafer
rosin resin
scope
patent application
Prior art date
Application number
TW087120907A
Other languages
English (en)
Inventor
Robert Rurlaender
Franz Mangs
Norbert Franze
Anton Dr Schnegg
Original Assignee
Wacker Siltronic Halbleitermat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Application granted granted Critical
Publication of TW414998B publication Critical patent/TW414998B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

414998 A7 經濟部中央樣準局負工消費合作社印製 五、發明説明（l ) 本發明與安裝（固定）及拆卸半導體晶圓之方法有闞， 其中半導體晶圓與一載體盤間之物質混合物將二者随溫度 變化而黏結及固化接合，且該物質混合物含有松香樹脂， 該松香樹脂係經化學修飾及酯化，於抛光該半導體晶圓之 後，該固化接合即行鬆開。再者，本發明與水溶性物質混 合物有闞，在乾烽之情況下該水溶性物質混合物随溫度不 同而黏結及固化，且該混合物含有經化學修飾及酯化之松 香樹脂，適於實施該方法。 拋光半導體晶圓正面時，係將該半導體晶圓之背面安 裝在一載體盤上。半導體晶圓與該載體盤係由一随溫度變 化而黏結及固化之黏著劑薄層接合0該黏著劑必備之特別 條件是：有助於抛光。該載體盤必須適於均勻塗佈該黏著 劑。該黏著劑之黏著作用必須眼於一狹窄之溫度範圍内。 在拋光時，必須持績保持固體狀態，俾半導體晶圓能持績 附著於載體盤上。尤其所用黏著劑不得對拋光後之半導體 晶圓之彤狀有負面影響。經拋光之半導體晶圓之表面必須 儘可能的平整。拋光後，該黏著劑應苛容易地自載體盤及 該半導體晶圓上除去。最後，該黏著劑不可釋放出任何物 質（尤其微蠆金屬），以免污染該半導體晶圓。 松香樹脂及其衍生物之黏著作用随溫度變化而不同。 但截自目前為止，仍未能確定一種以松香樹腊為主成分之 黏著劑可完全符合上述條件。 本發明與安裝及拆卸半導體晶圓之方法有闞，其中半 導體晶圓與載體盤間之物質混合物將二者随溫度變化而黏 -3 - ----------装------.玎------1 (’請先閱瘦背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29：/公釐） 414998 Α7 Β7 經濟部中央標準局貝工消費合作社印製 五、發明説明（2 ) 結及固化接合，且該物質混合物含有松香樹脂，該松番樹 脂係經化學修飾及酯化，於拋光該半導體晶圓之後，該固 化之接合即行鬆開。該方法包括用水將該接合鬆開。再者 ,本發明與該物質混合物有關，該混合物含有一化學通式 為NR1!?2!?3之胺，該胺可皂化該松香樹脂，在Rl、R2及R3 之基中至少有一個是脂族醇之基，且在1000毫巴壓力下該 胺之沸點超過150T。 尤其本發明值得注意的是，在混合及加熱該物質混合 物時，無易燃溶劑或有害健康之氣體釋出，所以該等物質 不需昂資之安全措施β此外，加熱至較低溫度，該等物質 即可轉變成黏著狀態，且即使在固化態亦可完全溶解於水 。再者，該方法不會在經拋光之半導體晶圓表面上留下次 微米趿之波紋。 該物質混合物含有化學修飾及酯化之松香樹脂。該產 品市上可以購得。該松香樹腊以從粗質松油（原高油）真空 蒸鑕製得者為佳。尤其該物質混合物所用者係由粗質松油 經再真空蒸餾所得分子董分布較窄之部分。由此方法製得 之松香樹腊（「松油松腊」）得再加以化學修飾及酯化。最 好該松香樹1旨之修飾作用係藉助於一種化合物之反應，該 化合物係遘自一髑包括順丁烯二酸、順丁烯二酐及反丁烯 二酸之族群。經修飾後之樹腊随後最好再用醇加以酯化， 該醇係番自一個包括丙三酵及異戊四醇之族群。經化學修 飾及酯化之松香樹腊，其酸值應為50至250,尤以100至 140[毫公克氫氧化鉀/公克樹腊]，其軟化點為60至U0P， -4 - f請先閱1 讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） 414996 Α7 Β7 經濟部中央標準局貝工消费合作社印裝 五、發明説明（3 ) 尤以90至UOC更佳。特別好的是瑞典之亞利桑納化學公 司出品之樹腊，該樹脂市上可購得，商名Ber8vik nxx ，其中XX係出廠批號，例如：⑼，01等。 依照本發明，經修飾及酯化之松番樹脂係用以製造物 質混合物，該混合物含有一化學通式nr1r2r3之胺，在Rl 、R2及R3基中至少一個基係一脂族酵之基，且在1000毫巴 壓力下該胺之沸點超過1501。特別好的是使用三乙醇胺 。尤其更好的是：三異丙醇胺、二異丙醇胺及二乙醇胺。 松香樹脂之皂化作用係在有溶於水中之胺存在之情況下實 施；在該等情況下該樹脂皂溶解於水相肉。 依照一特別好之配方，該物質混合物之姐成分為： 15至20%重量比烴化學修飾及酯化之松香樹脂·， 5至10¾重量比三乙醇胺； 高達2¾重虽比之非離子型界面活性劑，尤以壬基酿聚醚為 佳，係用作增塑劑； 達10¾重量比酵溶解劑，尤以異丙醇更佳； 高達0.05¾重量比之染料，尤Μ結晶紫、螢光染料（例如： 玫瑰精β及朝紅），及深色、水溶性食用染料（例如：孔雀綠) 為佳；及 湊成總量逵1005；重量比所需之水。 該物霣混合物之黏度業經加Μ調整，俾該載體盤苟均 勻地塗以該物質混合物。經塗被後，該物質涓合物變乾而 彤成一随潙度變化之黏著性及固化之物質。該物質之黏著 作用僅發生在較窄之溫度範圍（黏著區，「膠黏區」）内， -5 一 ---------^------’玎------.^ (讀先聞_讀背面之注意事項再填寫本頁〕 本紙張尺度適用中國國家標準（CNS Μ4規格（21〇χ297公釐） 414998 A7 B7 經濟部中央標隼局員工消費合作社印製 五、發明説明（4 ) 尤M45至85t：為佳。在一熱融黏著劑之案例中，該物質經 加熱至超過膠黏區内之高溫，其黏著作用即減低。為固化 半導體晶圓與載體盤間之接合，先將該載體盤加熱至膠黏 區內之溫度，再將一涸或更多個晶圓置於該載體盤上。當 載體盤冷卻時，該物質即固化且將半導體晶圓與載體盤堅 固地接合。通常在拋光期間即使30至501C之溫度情況下該 接合仍保持堅固。俟該半導體晶圓經拋光之後，半導體晶 圓與載體盤間之接合曆即行鬆開。使其與水接觸此項工作 即可達成，其中水溫以15至2510為佳。水可將該物質混合 物之殘留物自半導體晶圓上及載體盤上完全清除掉。 該物質湄合物之製備可藉下列諸實驗例加以清楚地說 明。 實驗例1) 在室溫及不停搜拌之情況下，將139,26公斤去離子水 ,14.74公斤三乙醇胺（80^重量比），4.52公斤壬基酚聚艇 ,19.64公斤纯異丙醇及0.1公斤孔雀綠依序加入35.74公 斤Bergvik M-106樹脂內。俟固體溶解後，經由一 5徹米袋 滤器將該混合物加以過濾並傾入若干容器罐内。在25¾溫 度下該溶液之黏度為22平方公厘/秒。乾燥物質混合物之 膠黏區係在49至72t之溫度範圍内。 實驗例2) 在室溫及不停攪拌之情況下，將138.5公斤去離子水 ,14.4公斤三乙醇胺（80¾重童比），4.50公斤壬基酚聚醚 ,19.7公斤純異丙醇及0.1公斤結晶紫依序加入35.74公斤 一 6 - ---------^------ir------m (.讀先閱ir背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4現格（2IOX297公釐） 414998 A7 A7 B7 五、發明説明（5 ) Bergvik M-106樹脂内。俟固體溶解後，經由一 5微米袋濾 器將該混合物加以過滤並傾入若干容器罐内。在251C溫度 下該溶液之黏度為22平方公厘/秒。乾煉物質混合物之膠 黏區係在60至80t之溫度範圍内。 實驗例3) 在室溫及不停攪拌之情況下，將276.50公斤去離子水 ,23.12公斤三乙醇胺（80¾重量比），8.42公斤壬基酚聚醚 ，25公斤纯異丙醇及0.185公斤玫瑰精B依序加人66.28公 FBergvik M-106樹脂內。俟固體溶解後，經由一 5微米袋 漶器將該混合物加以過滤並傾入若千容器罐肉。在2510溫 度下該溶液之黏度為22平方公厘/秒。乾烽物質混合物之 膠黏區係在66至79t：之溫度範圍肉。 I---------裝-- (請先閲tr背面之注意事項再填寫本買) 訂 涑 經濟部中央標準局員工消費合作社印裝 -Ί 一 本紙張又度適用中國國家楼準（CNS )人4規潘（210X297公釐）

Claims (1)

  1. 0牟Α μ目修i/更正/補寿_5修正 0牟Α μ目修i/更正/補寿_5修正 經濟部智慧財產局員Η消費合作杜印製 六、申請專利範圍 1' 一種安裝及拆卸半導體晶圓之方法，其中半導醴晶圓 與載體盤間之物質混合物將二者隨溫度變化而黏結及固化 接合’且該物質混合物含有松香樹脂，該松香樹脂係經化 學修姊及酯化，於拋光該半導嫌晶圓之後，該固化接合即 行鬆開，該方法包括用水鬆開該固化之接合β 2·如申請專利範圍第1項之方法，其辛該乾燥之物質混 合物僅在45至85°C之溫度範圍内發生黏結作用。 3·如申請專利範圍第1或2項之方法，其中該經固化之 接合係用水鬆開且載體盤上或半導體晶圓上並不留下該接 合之殘留物。 4· 一種水溶性物質混合物，在乾燥狀態下，該混合物隨 溫度變化而黏著及固化，且其中含有松香樹脂，該松香樹 脂係經化學修飾及酯化’該物質混合物含有一化學通式為 NRiR2!^之胺，該胺與松香樹脂實施皂化作用，且Rl、r2 及R3基中至少一個基係一脂族醇之基，且該胺在1000毫 巴壓力下之沸點超過15trt。 5·如申請專利範圍第4項之物質混合物，其中該胺係選 自一個包括三乙酵胺、三異丙醇胺、二異丙醇胺及二乙醇 胺之族群。 6·如申請專利範圍第4項之物質混合物，其中該松香樹 脂實施化學修飾反應所用之化合物係選自一個包括順丁稀 二酸、順丁烯二酐及反丁烯二酸之族群。 7·如申請專利範圍第4項之物質混合物，其中該松香樹 脂實施酯化所用之醇係選自一個包括丙三醇及異戊四醇之 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --I I--I I III—^.1111111 訂--------- (諳先閱讀背面之注意事項再填寫本頁) 0牟Α μ目修i/更正/補寿_5修正 0牟Α μ目修i/更正/補寿_5修正 經濟部智慧財產局員Η消費合作杜印製 六、申請專利範圍 1' 一種安裝及拆卸半導體晶圓之方法，其中半導醴晶圓 與載體盤間之物質混合物將二者隨溫度變化而黏結及固化 接合’且該物質混合物含有松香樹脂，該松香樹脂係經化 學修姊及酯化，於拋光該半導嫌晶圓之後，該固化接合即 行鬆開，該方法包括用水鬆開該固化之接合β 2·如申請專利範圍第1項之方法，其辛該乾燥之物質混 合物僅在45至85°C之溫度範圍内發生黏結作用。 3·如申請專利範圍第1或2項之方法，其中該經固化之 接合係用水鬆開且載體盤上或半導體晶圓上並不留下該接 合之殘留物。 4· 一種水溶性物質混合物，在乾燥狀態下，該混合物隨 溫度變化而黏著及固化，且其中含有松香樹脂，該松香樹 脂係經化學修飾及酯化’該物質混合物含有一化學通式為 NRiR2!^之胺，該胺與松香樹脂實施皂化作用，且Rl、r2 及R3基中至少一個基係一脂族醇之基，且該胺在1000毫 巴壓力下之沸點超過15trt。 5·如申請專利範圍第4項之物質混合物，其中該胺係選 自一個包括三乙酵胺、三異丙醇胺、二異丙醇胺及二乙醇 胺之族群。 6·如申請專利範圍第4項之物質混合物，其中該松香樹 脂實施化學修飾反應所用之化合物係選自一個包括順丁稀 二酸、順丁烯二酐及反丁烯二酸之族群。 7·如申請專利範圍第4項之物質混合物，其中該松香樹 脂實施酯化所用之醇係選自一個包括丙三醇及異戊四醇之 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --I I--I I III—^.1111111 訂--------- (諳先閱讀背面之注意事項再填寫本頁) AS B8 C8 D8 414^^8 六、申請專利範圍 族群。 8·如申請專利範圍第4、5、6或7項之物質混合物，其 組成分為· 15至20%重量比經化學修飾及酯化之松香樹脂； 5至10%重量比三乙醇胺； 高達2%重量比之非離子型界面活性劑； 高達10%重量比之醇溶解劑； 高達0.05%重量比之染料；及 湊成總量達100%重量比所需之水。 {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制衣 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐）
TW087120907A 1997-12-18 1998-12-16 Method of mounting and demounting a semiconductor wafer and substance mixture suitable for carrying out the method TW414998B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19756614A DE19756614A1 (de) 1997-12-18 1997-12-18 Verfahren zur Montage und Demontage einer Halbleiterscheibe, und Stoffmischung, die zur Durchführung des Verfahrens geeignet ist

Publications (1)

Publication Number Publication Date
TW414998B true TW414998B (en) 2000-12-11

Family

ID=7852573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087120907A TW414998B (en) 1997-12-18 1998-12-16 Method of mounting and demounting a semiconductor wafer and substance mixture suitable for carrying out the method

Country Status (7)

Country Link
US (1) US6171385B1 (zh)
EP (1) EP0924759B1 (zh)
JP (1) JP3032973B2 (zh)
KR (1) KR100284583B1 (zh)
DE (2) DE19756614A1 (zh)
SG (1) SG67579A1 (zh)
TW (1) TW414998B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10031139C2 (de) * 2000-06-27 2003-04-17 Wacker Siltronic Halbleitermat Verfahren und Stoffmischung zur Montage und Demontage von Halbleiterscheiben
DE10052293A1 (de) * 2000-10-20 2002-04-25 B L E Lab Equipment Gmbh Verfahren zum Aufbringen eines Substrats
DE10054159A1 (de) * 2000-11-02 2002-05-16 Wacker Siltronic Halbleitermat Verfahren zur Montage von Halbleiterscheiben
DE10139056B4 (de) * 2001-08-08 2005-04-21 Infineon Technologies Ag Verfahren zum Dünnen eines scheibenförmigen Gegenstands sowie zur Herstellung eines beidseitig strukturierten Halbleiterbauelements
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
CN100338166C (zh) * 2005-11-24 2007-09-19 深圳职业技术学院 一种补漏胶及其制备方法
DE102011089362B4 (de) 2011-12-21 2014-01-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102013204839A1 (de) 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
WO2014200567A1 (en) 2013-06-14 2014-12-18 Arizona Chemical Company, Llc Rosin ester tackifiers for pressure-sensitive adhesives
DE102013213838A1 (de) 2013-07-15 2014-09-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
DE102015217109B4 (de) 2015-09-08 2022-08-18 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
CN114634793A (zh) * 2022-03-23 2022-06-17 福州硕榕光电有限公司 一种光学上盘蜡及其制备方法与应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514864B2 (de) 1965-09-08 1971-08-19 Telefunken Patentverwertungsgesell schaft mbH, 7900 Ulm Verfahren zum sortieren von halbleiterelementen
DE2712521C2 (de) 1977-03-22 1987-03-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Aufkitten von Scheiben
DE3205734A1 (de) * 1982-02-18 1983-08-25 Henkel KGaA, 4000 Düsseldorf Kristallisationsinhibitoren fuer tallharze
CH666899A5 (de) * 1986-05-09 1988-08-31 Sika Ag Reaktiver schmelzklebstoff.
FR2600663B1 (fr) * 1986-06-27 1988-08-05 Charbonnages Ste Chimique Compositions pour adhesifs thermofusibles reticulables, les adhesifs correspondants ainsi que leurs procedes de preparation et d'application
SE9203499L (sv) * 1992-11-20 1994-05-21 Eka Nobel Ab Kolofoniumderivat som ytaktivt medel
EP0601615A1 (en) 1992-12-08 1994-06-15 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device whereby a semiconductor body is temporarily fastened to a further body for a processing operation
JP3845486B2 (ja) 1996-02-23 2006-11-15 ザ・インクテック株式会社 精密加工用仮着接着剤

Also Published As

Publication number Publication date
JPH11238711A (ja) 1999-08-31
SG67579A1 (en) 1999-09-21
DE59800557D1 (de) 2001-04-26
EP0924759B1 (de) 2001-03-21
DE19756614A1 (de) 1999-07-01
KR19990063063A (ko) 1999-07-26
EP0924759A2 (de) 1999-06-23
EP0924759A3 (de) 1999-09-08
KR100284583B1 (ko) 2001-11-02
JP3032973B2 (ja) 2000-04-17
US6171385B1 (en) 2001-01-09

Similar Documents

Publication Publication Date Title
TW414998B (en) Method of mounting and demounting a semiconductor wafer and substance mixture suitable for carrying out the method
CN1101437C (zh) 可复位的粘合制品
EP2738797B1 (en) Adhesive laminate for temporarily adhering a wafer to a support, wafer processing laminate consisting of said support, adhesive laminate and wafer, wafer processing member consisting of said support and said adhesive laminate, and method of manufacturing a thin wafer using said adhesive laminate
EP0883658B1 (en) Graphic marking film comprising pressure sensitive adhesive
US4028165A (en) Dry transfer product and process
CN1022302C (zh) 干转印图形品和制备方法及其用途
TW417197B (en) Wafer retainer and method for attaching/detaching the wafer retainer to/from polishing machine base plate
CN101472962A (zh) 树脂组合物和使用其对被加工构件进行临时固定的方法和表面保护方法
JPH07502461A (ja) レンズブロッキング／デブロッキング方法
JP3909907B2 (ja) 半導体ウエハ加工用粘着シ―ト類と加工方法
JP2741362B2 (ja) ウエハ−の仮着用接着剤
WO2010140569A1 (ja) 粘着シート及び半導体ウエハの裏面研削方法
JPH07105368B2 (ja) 半導体ウエハダイシング用粘着シート
EP0326530A2 (en) Adhesive stick
GB2085460A (en) Thermoplastic ink compositions
JP2000087004A (ja) 被加工物用保持剤およびそれを用いた被加工物の脱着方法
US20040029316A1 (en) Method for assembling planar workpieces
TW593613B (en) Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
TW322512B (zh)
JP4492893B2 (ja) 液状仮着接着剤
Mould et al. A New Alternative for Temporary Wafer Mounting
TWI224981B (en) Powdery microcapsules and process for the preparation thereof
JPH08203849A (ja) 研磨用ウエハ保持部材及びそのウエハ保持部材の定盤への装着方法
JP3845486B2 (ja) 精密加工用仮着接着剤
JP2000297271A (ja) 固形仮着接着剤

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent