KR19990029224A - 반도체레이저장치 - Google Patents
반도체레이저장치 Download PDFInfo
- Publication number
- KR19990029224A KR19990029224A KR1019980022348A KR19980022348A KR19990029224A KR 19990029224 A KR19990029224 A KR 19990029224A KR 1019980022348 A KR1019980022348 A KR 1019980022348A KR 19980022348 A KR19980022348 A KR 19980022348A KR 19990029224 A KR19990029224 A KR 19990029224A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor laser
- submount
- heat sink
- laser device
- laser element
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (8)
- 금속제의 히트싱크와, 상기 히트싱크상에 탑재되는 도전성의 서브마운트와, 상기 서브마운트에 PN정션의 한쪽의 도전형전극이 전기적으로 접속되도록 탑재된 반도체레이저소자와, 상기 서브마운트 근방에 배치된 복수의 리드핀을 갖는 반도체레이저장치에 있어서,상기 히트싱크와 서브마운트와의 사이에 절연체가 설치됨과 동시에, 상기 리드핀의 한쪽의 리드핀과 반도체레이저소자의 다른쪽 도전형전극 및, 상기 리드핀의 다른쪽의 리드핀과 상기 서브마운트가 전기적으로 접속되어 있는 것을 특징으로 하는 반도체레이저장치.
- 제 1항에 있어서,상기 리드핀의 하나의 리드핀과 반도체레이저소자의 다른쪽 도전형전극이 상기 서브마운트상의 절연막에 형성된 금속배선을 거쳐서 전기적으로 접속되어 있는 것을 특징으로 하는 반도체레이저장치.
- 제1항 또는 제2항에 있어서,상기 절연체가 상기 서브마운트와 동등 이상의 열전도율을 갖는 것을 특징으로 하는 반도체레이저장치.
- 제 3항에있어서,절연체가 AlN 또는 SiC 또는 BeO인 것을 특징으로 하는 반도체레이저장치.
- 금속제의 히트싱크와, 상기 히트싱크상에 탑재되는 도전성의 서브마운트와, 상기 서브마운트에 PN정션의 P측면이 전기적으로 접속되도록 탑재된 반도체레이저소자와, 상기 서브마운트 근방에 배치된 리드핀을 갖는 반도체레이저장치에 있어서,상기 히트싱크와 상기 서브마운트 사이에 절연체가 설치됨과 동시에, 상기 히트싱크와 상기 반도체레이저소자의 N측 및, 상기 리드핀과 서브마운트가 전기적으로 접속되어 있는 것을 특징으로 하는 반도체레이저장치.
- 제 5항에 있어서,상기 히트싱크와 반도체레이저소자의 N측이 서브마운트상의 절연막에 형성된 금속배선을 거쳐서 전기적으로 접속되어 있는 것을 특징으로 하는 반도체레이저장치.
- 제 5항 또는 제 6항에 있어서,절연체가 서브마운트와 동등 이상의 열전도율을 갖는 것을 특징으로 하는 반도체레이저장치.
- 제 7항에 있어서,절연체가 AlN 또는 SiC 또는 BeO인 것을 특징으로 하는 반도체레이저장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9260161A JPH11103120A (ja) | 1997-09-25 | 1997-09-25 | 半導体レーザ装置 |
JP97-260161 | 1997-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990029224A true KR19990029224A (ko) | 1999-04-26 |
KR100522635B1 KR100522635B1 (ko) | 2005-12-30 |
Family
ID=17344174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1998-0022348A KR100522635B1 (ko) | 1997-09-25 | 1998-06-15 | 반도체레이저장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6301278B2 (ko) |
JP (1) | JPH11103120A (ko) |
KR (1) | KR100522635B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780522B1 (ko) * | 1999-10-06 | 2007-11-29 | 로무 가부시키가이샤 | 반도체 레이저 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223791A (ja) * | 1999-02-04 | 2000-08-11 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JP2001168442A (ja) * | 1999-12-07 | 2001-06-22 | Sony Corp | 半導体レーザ素子の製造方法、配設基板および支持基板 |
US6920161B2 (en) * | 2002-01-18 | 2005-07-19 | Oepic Semiconductors, Inc. | High-speed TO-can optoelectronic packages |
JP3737769B2 (ja) * | 2002-03-28 | 2006-01-25 | 株式会社東芝 | 半導体レーザ装置 |
EP1349243B1 (en) * | 2002-03-29 | 2008-04-30 | Matsushita Electric Industrial Co., Ltd. | Optical device, method of manufacturing the same, optical module, optical transmission system |
JP2004022760A (ja) * | 2002-06-14 | 2004-01-22 | Oki Electric Ind Co Ltd | レーザダイオード |
US7170151B2 (en) * | 2003-01-16 | 2007-01-30 | Philips Lumileds Lighting Company, Llc | Accurate alignment of an LED assembly |
US7039083B2 (en) * | 2003-03-12 | 2006-05-02 | Opnext, Inc. | High speed optical transmission assembly |
JP2004281682A (ja) * | 2003-03-14 | 2004-10-07 | Sumitomo Electric Ind Ltd | 光送信装置 |
KR100526504B1 (ko) * | 2003-06-04 | 2005-11-08 | 삼성전자주식회사 | 광소자 모듈 패키지 및 그 제조 방법 |
JP2005026291A (ja) * | 2003-06-30 | 2005-01-27 | Sharp Corp | 窒化物系半導体発光装置およびその製造方法 |
JP2005167189A (ja) * | 2003-11-13 | 2005-06-23 | Hitachi Cable Ltd | 光−電気変換モジュール及びそれを用いた光トランシーバ |
KR100856280B1 (ko) * | 2004-05-25 | 2008-09-03 | 삼성전기주식회사 | 반도체 레이저 다이오드 패키지 |
WO2007132672A1 (ja) * | 2006-05-11 | 2007-11-22 | Panasonic Corporation | 半導体レーザ装置、光ピックアップ装置および光情報記録再生装置 |
US9089075B2 (en) * | 2012-03-27 | 2015-07-21 | Gerald Ho Kim | Silicon-based cooling package for cooling and thermally decoupling devices in close proximity |
JP6809101B2 (ja) * | 2016-09-30 | 2021-01-06 | 日亜化学工業株式会社 | 光源装置 |
JP7091640B2 (ja) * | 2017-12-06 | 2022-06-28 | セイコーエプソン株式会社 | 発光装置および発光装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138778A (ja) * | 1987-11-25 | 1989-05-31 | Mitsubishi Electric Corp | 半導体レーザ装置 |
NL8800140A (nl) * | 1988-01-22 | 1989-08-16 | Philips Nv | Laserdiode module. |
JPH02186648A (ja) * | 1989-01-12 | 1990-07-20 | Nec Corp | 半導体装置用ステム |
JPH0719929B2 (ja) * | 1989-03-28 | 1995-03-06 | 三菱電機株式会社 | 半導体レーザ装置 |
JP2618069B2 (ja) * | 1990-04-25 | 1997-06-11 | 松下電子工業株式会社 | 半導体レーザ装置 |
JPH06188516A (ja) * | 1992-12-16 | 1994-07-08 | Matsushita Electron Corp | 光半導体装置およびその製造方法 |
US5328715A (en) * | 1993-02-11 | 1994-07-12 | General Electric Company | Process for making metallized vias in diamond substrates |
JP2937791B2 (ja) * | 1995-03-14 | 1999-08-23 | 日本電気株式会社 | ペルチエクラーク |
-
1997
- 1997-09-25 JP JP9260161A patent/JPH11103120A/ja active Pending
-
1998
- 1998-06-15 KR KR10-1998-0022348A patent/KR100522635B1/ko not_active IP Right Cessation
- 1998-07-21 US US09/119,696 patent/US6301278B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780522B1 (ko) * | 1999-10-06 | 2007-11-29 | 로무 가부시키가이샤 | 반도체 레이저 |
Also Published As
Publication number | Publication date |
---|---|
KR100522635B1 (ko) | 2005-12-30 |
US20010006526A1 (en) | 2001-07-05 |
US6301278B2 (en) | 2001-10-09 |
JPH11103120A (ja) | 1999-04-13 |
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