KR19980033124A - 방사선 감응성 조성물 - Google Patents
방사선 감응성 조성물 Download PDFInfo
- Publication number
- KR19980033124A KR19980033124A KR1019970054585A KR19970054585A KR19980033124A KR 19980033124 A KR19980033124 A KR 19980033124A KR 1019970054585 A KR1019970054585 A KR 1019970054585A KR 19970054585 A KR19970054585 A KR 19970054585A KR 19980033124 A KR19980033124 A KR 19980033124A
- Authority
- KR
- South Korea
- Prior art keywords
- solvent
- resist
- propylene glycol
- weight
- groups
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
내식막 용매(혼합물 중량비) | |
실시예1 | PGMEA:PnB= 98:2 |
실시예2 | PGMEA:PnB= 95:5 |
실시예3 | PGMEA:PnB= 90:10 |
실시예4 | PGMEA:PnB= 80:20 |
실시예5 | PGMEA:PGEEA= 75:25 |
비교 실시예1 | PGMEA |
비교 실시예2 | PGMEA:PnB= 70:30 |
가열 시간(분) | ||||||
2 | 5 | 10 | 15 | 20 | 30 | |
실시예 1 | 77.41 | 54.55 | 36.35 | 28.74 | 25.43 | 21.36 |
실시예 2 | 77.53 | 54.72 | 36.47 | 28.19 | 24.88 | 20.64 |
실시예 3 | 77.90 | 55.17 | 36.81 | 28.19 | 25.08 | 20.78 |
실시예 4 | 80.12 | 55.73 | 37.20 | 29.30 | 26.66 | 22.22 |
실시예 5 | 77.45 | 54.42 | 36.32 | 29.02 | 25.88 | 21.94 |
비교 실시예 1 | 77.30 | 52.87 | 36.25 | 31.05 | 27.80 | 23.72 |
비교 실시예 2 | 88.34 | 58.13 | 40.02 | 32.63 | 30.48 | 27.56 |
노광되지 않은 부위(Å)의 막 두께의 감소량 | |
실시예 1 | 353 |
실시예 2 | 323 |
실시예 3 | 327 |
실시예 4 | 345 |
실시예 5 | 370 |
비교 실시예 1 | 382 |
비교 실시예 2 | 428 |
σ(μm) | |
실시예1 | 0.263 |
실시예2 | 0.167 |
실시예3 | 0.175 |
실시예4 | 0.238 |
실시예5 | 0.282 |
비교 실시예1 | 0.361 |
비교 실시예2 | 0.402 |
현상 시간(초) | |||
60 | 90 | 120 | |
실시예 1 | ○ | ○ | ○ |
실시예 2 | ○ | ○ | ○ |
실시예 3 | ○ | ○ | ○ |
실시예 4 | ○ | ○ | ○ |
실시예 5 | ○ | ○ | ○ |
비교 실시예 1 | ○ | × | × |
비교 실시예 2 | ○ | × | × |
Claims (2)
- 용매로서,(A) 화학식 1의 프로필렌 글리콜 유도체 1 내지 25중량%, 및(B) 프로필렌 글리콜 모노메틸 에테르 아세테이트 및 에틸 락테이트로부터 선택된 1 종류 이상의 용매 75 내지 99중량%를 포함하는 혼합 용매를 사용하는 방사선 감응성 조성물.화학식 1R1-O-CH2CH(CH3)-O-R2상기식에서, R1및 R2는 독립적으로 수소 원자, 탄소수 2 내지 5의 알킬 그룹 및 아세틸 그룹이고, R1및 R2의 총 탄소수는 8 미만이고, R1및 R2가 동시에 수소원자는 아니다.
- 제1항에 있어서, 프로필렌 글리콜 유도체가 프로필렌 글리콜 모노-n-부틸 에테르인 방사선 감응성 조성물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP96-284293 | 1996-10-25 | ||
JP28429396A JP3376222B2 (ja) | 1996-10-25 | 1996-10-25 | 放射線感応性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980033124A true KR19980033124A (ko) | 1998-07-25 |
KR100509884B1 KR100509884B1 (ko) | 2005-11-16 |
Family
ID=17676662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970054585A KR100509884B1 (ko) | 1996-10-25 | 1997-10-24 | 방사선감응성조성물 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5962187A (ko) |
EP (1) | EP0838727B1 (ko) |
JP (1) | JP3376222B2 (ko) |
KR (1) | KR100509884B1 (ko) |
CN (1) | CN1180849A (ko) |
DE (1) | DE69705283T2 (ko) |
SG (1) | SG102525A1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4019403B2 (ja) * | 1999-03-08 | 2007-12-12 | Jsr株式会社 | レジストパターンの形成方法 |
JP3894477B2 (ja) * | 2002-02-27 | 2007-03-22 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
JP3986927B2 (ja) * | 2002-08-22 | 2007-10-03 | 富士通株式会社 | 半導体装置の製造方法 |
JP2004341431A (ja) * | 2003-05-19 | 2004-12-02 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターンの形成方法 |
JP4647418B2 (ja) * | 2005-07-19 | 2011-03-09 | ダイセル化学工業株式会社 | レジスト組成物 |
JP2007101715A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | パターン形成方法及びそれに用いるレジスト組成物 |
US8182975B2 (en) * | 2007-03-28 | 2012-05-22 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
JP6650696B2 (ja) * | 2014-09-08 | 2020-02-19 | 信越化学工業株式会社 | ドライフィルム積層体の製造方法 |
CN105600943A (zh) * | 2015-12-28 | 2016-05-25 | 上海亘卓生物工程有限公司 | 一种利用微生物有效降低发酵废水中bod、cod水平的方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3924812A1 (de) * | 1989-07-27 | 1991-01-31 | Hoechst Ag | Loesemittelgemisch und beschichtungsloesung fuer die herstellung negativ arbeitender lichtempfindlicher aufzeichnungsmaterialien |
JPH049063A (ja) * | 1990-04-07 | 1992-01-13 | Konica Corp | 感光性組成物 |
JPH0748805B2 (ja) * | 1990-05-28 | 1995-05-24 | 三菱電機株式会社 | オート・トラッキング・モニタのs字補正コンデンサ切替装置 |
US5426017A (en) * | 1990-05-31 | 1995-06-20 | Hoechst Celanese Corporation | Composition and method for removing photoresist composition from substrates surfaces |
KR920005780B1 (ko) * | 1990-06-16 | 1992-07-18 | 제일합섬 주식회사 | 내열성이 우수한 포토레지스트 조성물 |
JPH0692909A (ja) * | 1992-04-10 | 1994-04-05 | Sumitomo Chem Co Ltd | 炭酸エステル環状化合物、その製造方法及びそれを用いてなるポジ型フォトレジスト組成物 |
US5612303B1 (en) * | 1993-06-15 | 2000-07-18 | Nitto Chemical Industry Co Ltd | Solvent composition |
KR960015081A (ko) * | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
JPH0736189A (ja) * | 1993-07-15 | 1995-02-07 | Japan Synthetic Rubber Co Ltd | レジスト塗布組成物 |
JP2906960B2 (ja) * | 1993-11-29 | 1999-06-21 | 信越化学工業株式会社 | ポジ型フォトレジスト組成物 |
US5458921A (en) * | 1994-10-11 | 1995-10-17 | Morton International, Inc. | Solvent system for forming films of photoimageable compositions |
-
1996
- 1996-10-25 JP JP28429396A patent/JP3376222B2/ja not_active Expired - Lifetime
-
1997
- 1997-10-16 SG SG9703757A patent/SG102525A1/en unknown
- 1997-10-21 US US08/955,453 patent/US5962187A/en not_active Expired - Lifetime
- 1997-10-22 DE DE69705283T patent/DE69705283T2/de not_active Expired - Fee Related
- 1997-10-22 EP EP97118353A patent/EP0838727B1/en not_active Expired - Lifetime
- 1997-10-24 CN CN97119096A patent/CN1180849A/zh active Pending
- 1997-10-24 KR KR1019970054585A patent/KR100509884B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69705283T2 (de) | 2001-10-31 |
JP3376222B2 (ja) | 2003-02-10 |
CN1180849A (zh) | 1998-05-06 |
EP0838727B1 (en) | 2001-06-20 |
EP0838727A1 (en) | 1998-04-29 |
JPH10133363A (ja) | 1998-05-22 |
KR100509884B1 (ko) | 2005-11-16 |
SG102525A1 (en) | 2004-03-26 |
DE69705283D1 (de) | 2001-07-26 |
US5962187A (en) | 1999-10-05 |
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