KR102908616B1 - 기판의 처리 방법, 약액 및 약액의 제공 방법 - Google Patents

기판의 처리 방법, 약액 및 약액의 제공 방법

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Publication number
KR102908616B1
KR102908616B1 KR1020247009690A KR20247009690A KR102908616B1 KR 102908616 B1 KR102908616 B1 KR 102908616B1 KR 1020247009690 A KR1020247009690 A KR 1020247009690A KR 20247009690 A KR20247009690 A KR 20247009690A KR 102908616 B1 KR102908616 B1 KR 102908616B1
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KR
South Korea
Prior art keywords
substrate
liquid
chemical
solution
chemical solution
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Application number
KR1020247009690A
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English (en)
Korean (ko)
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KR20240046604A (ko
Inventor
다쿠미 나미키
가즈마사 와키야
유키히사 와다
Original Assignee
도오꾜오까고오교 가부시끼가이샤
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Publication of KR20240046604A publication Critical patent/KR20240046604A/ko
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Publication of KR102908616B1 publication Critical patent/KR102908616B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H01L21/02057—
    • H01L21/0273—
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
KR1020247009690A 2021-09-30 2022-09-20 기판의 처리 방법, 약액 및 약액의 제공 방법 Active KR102908616B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163250239P 2021-09-30 2021-09-30
US63/250,239 2021-09-30
PCT/JP2022/034953 WO2023054055A1 (ja) 2021-09-30 2022-09-20 基板の処理方法、薬液及び薬液の提供方法

Publications (2)

Publication Number Publication Date
KR20240046604A KR20240046604A (ko) 2024-04-09
KR102908616B1 true KR102908616B1 (ko) 2026-01-06

Family

ID=85782532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247009690A Active KR102908616B1 (ko) 2021-09-30 2022-09-20 기판의 처리 방법, 약액 및 약액의 제공 방법

Country Status (5)

Country Link
US (1) US12593639B2 (https=)
JP (1) JP7766702B2 (https=)
KR (1) KR102908616B1 (https=)
TW (1) TW202323512A (https=)
WO (1) WO2023054055A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7776349B2 (ja) * 2022-02-28 2025-11-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327894A (ja) * 2003-04-28 2004-11-18 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法及び超臨界乾燥装置
JP2007088257A (ja) * 2005-09-22 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板乾燥方法
JP2013055230A (ja) * 2011-09-05 2013-03-21 Toshiba Corp 半導体基板の超臨界乾燥方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6358673B1 (en) 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
JP2000223467A (ja) * 1999-01-28 2000-08-11 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法および装置
JP4042412B2 (ja) 2002-01-11 2008-02-06 ソニー株式会社 洗浄及び乾燥方法
JP2003347261A (ja) * 2002-05-30 2003-12-05 Tokyo Electron Ltd 洗浄装置、および洗浄方法
JP4008900B2 (ja) * 2004-07-22 2007-11-14 日本電信電話株式会社 超臨界処理方法
JP2008078322A (ja) 2006-09-20 2008-04-03 Sony Corp 半導体ウェーハの処理方法及び処理装置
JP2008130685A (ja) 2006-11-17 2008-06-05 Sony Corp 微細構造体の処理方法、処理装置、及びその微細構造体
JP2010074140A (ja) 2008-08-22 2010-04-02 Toshiba Corp 基板処理装置および基板処理方法
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
JP6085423B2 (ja) * 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
TWI689004B (zh) 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
JP2015014726A (ja) 2013-07-05 2015-01-22 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP6168128B2 (ja) 2015-11-11 2017-08-02 セントラル硝子株式会社 基板の処理方法及びその方法に用いる溶剤
JP2017195312A (ja) * 2016-04-21 2017-10-26 ダイキン工業株式会社 半導体基板の基板処理方法及び基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327894A (ja) * 2003-04-28 2004-11-18 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法及び超臨界乾燥装置
JP2007088257A (ja) * 2005-09-22 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板乾燥方法
JP2013055230A (ja) * 2011-09-05 2013-03-21 Toshiba Corp 半導体基板の超臨界乾燥方法

Also Published As

Publication number Publication date
JPWO2023054055A1 (https=) 2023-04-06
KR20240046604A (ko) 2024-04-09
US20240395538A1 (en) 2024-11-28
WO2023054055A1 (ja) 2023-04-06
US12593639B2 (en) 2026-03-31
JP7766702B2 (ja) 2025-11-10
TW202323512A (zh) 2023-06-16

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