WO2023054055A1 - 基板の処理方法、薬液及び薬液の提供方法 - Google Patents

基板の処理方法、薬液及び薬液の提供方法 Download PDF

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Publication number
WO2023054055A1
WO2023054055A1 PCT/JP2022/034953 JP2022034953W WO2023054055A1 WO 2023054055 A1 WO2023054055 A1 WO 2023054055A1 JP 2022034953 W JP2022034953 W JP 2022034953W WO 2023054055 A1 WO2023054055 A1 WO 2023054055A1
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Prior art keywords
chemical solution
substrate
chemical
processing method
organic solvent
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PCT/JP2022/034953
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English (en)
French (fr)
Japanese (ja)
Inventor
拓海 並木
和正 脇屋
幸久 和田
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to US18/695,607 priority Critical patent/US12593639B2/en
Priority to KR1020247009690A priority patent/KR102908616B1/ko
Priority to JP2023551340A priority patent/JP7766702B2/ja
Publication of WO2023054055A1 publication Critical patent/WO2023054055A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Definitions

  • the present invention relates to a substrate processing method, a chemical solution, and a chemical solution providing method.
  • the substrate is washed with a rinsing liquid.
  • the rinsing liquid is removed by drying the substrate. At this time, the pattern on the substrate surface collapses due to the capillary force of the rinsing liquid remaining in the pattern. may occur.
  • the fluid in a method of cleaning the surface of a semiconductor substrate with an aqueous cleaning liquid, replacing the aqueous cleaning liquid adhering to the substrate surface with a supercritical fluid, and drying the substrate, the fluid includes Fe, Ni, Cr, Al, A semiconductor characterized by using a solvent containing a fluorine-containing alcohol having 2 to 6 carbon atoms in which the content of each element of Zn, Cu, Mg, Li, K, Na, and Ca is 500 mass ppb or less. Substrate processing methods have been proposed.
  • the method for processing a semiconductor substrate described in Patent Document 1 uses a fluorine-containing alcohol having 2 to 6 carbon atoms as a solvent.
  • the fluorine-containing alcohol is not highly versatile as a solvent, is not readily available, and has a high global warming potential.
  • Isopropyl alcohol is also commonly used as a supercritical fluid. However, since IPA easily absorbs moisture in the air and easily involves external impurities, there is a concern that this may cause pattern collapse.
  • the present invention has been made in view of the above circumstances. Further, another object of the present invention is to provide a method for providing the chemical solution.
  • a first aspect of the present invention is a substrate processing method for processing the surface of a substrate having an uneven pattern formed on the surface, wherein the surface of the substrate is rinsed with a rinse liquid containing water.
  • a rinsing step a chemical solution replacement step of bringing a chemical solution into contact with the rinsed surface of the substrate and replacing the liquid adhering to the surface of the substrate from the rinsing solution with the chemical solution; a step of changing the state of the chemical to a supercritical state by raising the temperature of the chemical to a critical temperature or higher; and a removing step of removing the chemical in the supercritical state from the surface of the substrate, wherein the chemical is , a method for treating a substrate containing an organic solvent (S1) having a higher specific gravity than water (excluding an organic solvent having a fluorine atom).
  • S1 organic solvent having a higher specific gravity than water
  • a second aspect of the present invention includes a rinsing step of rinsing the surface of a substrate having an uneven pattern formed on the surface with a rinsing liquid containing water; a chemical solution replacement step of replacing the liquid adhering to the surface of the substrate from the rinse solution with the chemical solution; and raising the temperature of the substrate wet with the chemical solution to a critical temperature of the chemical solution or higher to bring the chemical solution into a supercritical state. and a removal step of removing the supercritical chemical from the surface of the substrate, the chemical used in the substrate processing method, wherein the chemical is an organic solvent having a higher specific gravity than water ( S1) is a chemical liquid containing (however, an organic solvent having a fluorine atom is excluded).
  • a third aspect of the present invention is a chemical solution providing method for providing the chemical solution to a process line that executes the substrate processing method according to the first aspect of the present invention.
  • a method of processing a substrate having a favorable effect of suppressing collapse of a pattern when processing a surface of a substrate on which an uneven pattern is formed a chemical solution used in the method of processing the substrate, and a method of providing the chemical solution. can do.
  • FIG. 2 is a flowchart of a substrate processing method according to the first embodiment
  • FIG. 10 is a flowchart of a substrate processing method according to the second embodiment
  • a first aspect of the present invention is a substrate processing method for processing the surface of a substrate having an uneven pattern formed on the surface, wherein the surface of the substrate is rinsed with a rinse liquid containing water.
  • a chemical solution replacement step of bringing a chemical solution into contact with the rinsed surface of the substrate to replace the liquid adhering to the surface of the substrate from the rinsing solution with the chemical solution; a state changing step of raising the temperature of the chemical to a critical temperature or higher to bring the chemical into a supercritical state; and a removing step of removing the chemical in the supercritical state from the surface of the substrate, wherein the chemical is water.
  • This is a method for treating a substrate containing an organic solvent (S1) having a higher specific gravity than the organic solvent (excluding an organic solvent having a fluorine atom).
  • the substrate is not particularly limited, and conventionally known substrates can be used.
  • a silicon oxide film such as a natural oxide film, a thermal oxide film and a vapor-phase synthetic film (such as a CVD film) may be formed on the surface of the silicon oxide film.
  • a pattern may be formed on the substrate.
  • the “surface” includes the surface of the substrate itself, the surface of the inorganic pattern provided on the substrate, and the surface of the non-patterned inorganic layer.
  • An example of the inorganic pattern provided on the substrate is an inorganic pattern formed by forming an etching mask on the surface of the inorganic layer present on the substrate by a photoresist method, and then performing an etching treatment.
  • the inorganic layer include the substrate itself, a layer made of an oxide of an element constituting the substrate, and a layer made of an inorganic substance such as silicon nitride, titanium nitride, and tungsten formed on the surface of the substrate.
  • Examples of such an inorganic layer include, but are not limited to, an inorganic layer formed during the manufacturing process of a semiconductor device.
  • the shape of the pattern is not particularly limited, and may be, for example, a pattern shape generally formed in the semiconductor manufacturing process.
  • the pattern shape may be a line pattern, a hole pattern, or a pattern including a plurality of pillars.
  • the pattern shape is preferably a pattern comprising a plurality of pillars.
  • the shape of the pillar is not particularly limited, but examples thereof include a cylindrical shape, a polygonal prismatic shape (quadrangular prismatic shape, etc.), and the like.
  • FIG. 1 shows a flowchart of a substrate processing method according to the first embodiment.
  • the substrate processing method of the present embodiment comprises a rinsing step S101 of rinsing the surface of the substrate with a rinse liquid containing water, bringing a chemical solution into contact with the rinsed surface of the substrate, and removing the liquid adhering to the surface of the substrate.
  • a chemical replacement step S102 of replacing the rinsing solution with the chemical solution and a state change step S103 of raising the temperature of the substrate wet with the chemical solution to a temperature equal to or higher than the critical temperature of the chemical solution to bring the chemical solution into a supercritical state.
  • a removing step S104 for removing the supercritical chemical solution from the surface of the substrate.
  • the rinsing step S101 is a step of rinsing the surface of the substrate with a rinsing liquid containing water.
  • the rinsing method is not particularly limited, and a method generally used for cleaning substrates in the semiconductor manufacturing process can be adopted. Such methods include, for example, a spin coating method, an immersion method (dip method), a spray method, and a liquid filling method (paddle method), which will be described later.
  • the spin coating method is a method in which a substrate is rotated using a spin coater or the like, and a rinse solution is dripped or sprayed onto the rotated substrate.
  • the immersion method (dip method) is a method of immersing the substrate in a rinse liquid.
  • the spray method is a method in which a substrate is transported in a predetermined direction and a rinse liquid is sprayed into that space.
  • the liquid heaping method (paddle method) is a method in which the rinse liquid is heaped up on the substrate by surface tension and left stationary for a certain period of time.
  • the spin coating method is preferable for the rinsing step S101.
  • As the rotation speed of the spin 100 rpm or more and 5000 rpm or less are exemplified.
  • the rinsing liquid in the rinsing step S101 contains water.
  • water pure water, deionized water, ion-exchanged water, or the like can be used.
  • the rinse liquid in this embodiment may contain an organic solvent in addition to water.
  • organic solvents examples include hydrocarbons, esters, ethers, ketones, halogen-containing solvents, sulfoxide solvents, alcohols, polyhydric alcohol derivatives, and nitrogen-containing compound solvents.
  • the rinse liquid may further contain known additives.
  • Known additives include, for example, fluorine-based surfactants and silicone-based surfactants.
  • fluorine-based surfactants include BM-1000, BM-1100 (both manufactured by BM Chemie), Megafac F142D, Megafac F172, Megafac F173, and Megafac F183 (both manufactured by DIC).
  • silicone-based surfactants include unmodified silicone-based surfactants, polyether-modified silicone-based surfactants, polyester-modified silicone-based surfactants, alkyl-modified silicone-based surfactants, and aralkyl-modified silicone-based surfactants. Active agents, reactive silicone surfactants, and the like can be preferably used. A commercially available silicone surfactant can be used as the silicone surfactant.
  • silicone surfactants include Paintad M (manufactured by Dow Corning Toray Co., Ltd.), Topica K1000, Topica K2000, Topica K5000 (all manufactured by Takachiho Sangyo Co., Ltd.), XL-121 (polyether-modified silicone surfactant, manufactured by Clariant), BYK-310 (polyester-modified silicone surfactant, manufactured by BYK-Chemie), and the like.
  • the chemical solution replacement step S102 is a step of bringing a chemical solution into contact with the surface of the substrate rinsed in the rinsing step S101 described above, and replacing the liquid adhering to the surface of the substrate from the rinse solution with the chemical solution.
  • the chamber is, for example, a high-pressure container made of stainless steel and having a predetermined pressure resistance.
  • the method of bringing the chemical solution into contact with the surface of the substrate is not particularly limited, and includes, for example, the above-mentioned spin coating method, immersion method (dip method), spray method, liquid heaping method (paddle method), and the like.
  • the chemical solution in the chemical solution replacement step S102 contains an organic solvent (S1) having a higher specific gravity than water. However, in the organic solvent (S1), an organic solvent having a fluorine atom is excluded. It is preferable that the chemical solution in the present embodiment does not contain an organic solvent having a fluorine atom from the viewpoint of reducing cost and environmental load.
  • Organic solvent (S1) in the present embodiment is not particularly limited as long as it does not have a fluorine atom and has a higher specific gravity than water, but polar solvents such as carbonate solvents and lactone solvents are preferred.
  • specific gravity is a value calculated using water at 4° C. as a standard substance.
  • organic solvent (S1) in the present embodiment examples include propylene carbonate (propylene carbonate, specific gravity: 1.2047, solubility: 29.3), dimethyl carbonate (dimethyl carbonate, specific gravity: 1.0636, solubility: 8 .5), ethylene carbonate (ethylene carbonate, specific gravity: 1.3214, solubility: 29.3), diethyl carbonate (diethyl carbonate, specific gravity: 1.069, solubility: 1.8), butylene carbonate (butylene carbonate, specific gravity: 1.107, solubility: 13.5), furfuryl alcohol (specific gravity: 1.1296, solubility: 7.7), tetrahydrofurfuryl alcohol (specific gravity: 1.0544, solubility: 16.9), dihydrolevoglucosenone (Sylene, specific gravity: 1.261, solubility: 3.2), ⁇ -butyrolactone (specific gravity: 1.1284, solubility: 7.0), ⁇ -valerolactone (specific gravity: :
  • the specific gravity of the organic solvent (S1) in the present embodiment is more than 1.0, preferably 1.05 or more, more preferably 1.1 or more.
  • the organic solvent (S1) may be used alone or in combination of two or more.
  • the ratio of the organic solvent (S1) in the chemical solution is preferably 50% by mass or more, more preferably 75% by mass or more, and may be 100% by mass with respect to the total mass of the chemical solution.
  • the chemical solution in this embodiment may contain an organic solvent (S2) other than the organic solvent (S1) described above.
  • organic solvents (S2) include protic polar solvents such as glycol solvents, glycol ether solvents, and alcohol solvents; aprotic polar solvents; hydrocarbon solvents and the like.
  • the organic solvent (S2) may be used alone or in combination of two or more.
  • the chemical solution in the present embodiment may consist only of the organic solvent (S1) or may be a mixed solvent of the organic solvent (S1) and the organic solvent (S2). , is preferably greater than 1.0, more preferably 1.05 or more, and even more preferably 1.1 or more. That is, the chemical liquid in the present embodiment preferably has a specific gravity of more than 1.0 as a whole chemical liquid, more preferably 1.05 or more, and further preferably 1.1 or more.
  • the chemical solution in the chemical solution replacement step S102 preferably has the property of dissolving 0.5 to 40 g of water in 100 mL of the chemical solution at 25°C, and the property of dissolving 1 to 30 g of water in 100 mL of the chemical solution at 25°C. More preferably, it has the property of dissolving 2 to 20 g of water in 100 mL of the chemical solution at 25°C.
  • the organic solvent (S1) that satisfies the above range may be selected, or the organic solvent (S1) and the organic solvent (S2) are mixed to satisfy the above range. can be adjusted to
  • the chemical solution can contain components other than the organic solvent (S1) and the organic solvent (S2) within a range that does not impair the effects of the present invention.
  • Other components include metal chelating agents (aminocarboxylic acid-based chelating agents, phosphonic acid-based chelating agents, acetylene alcohol, etc.), pH adjusters, surfactants, and known organic solvents that do not correspond to the above solvents. .
  • the state change step S103 is a step of raising the temperature of the substrate wetted with the chemical in the chemical replacement step S102 above the critical temperature of the chemical to bring the chemical into a supercritical state.
  • the liquid chemical can be brought into a supercritical state.
  • the supercritical state is a state of a substance placed under a temperature and pressure higher than the critical point, and a chemical liquid in the supercritical state has both gas diffusibility and liquid solubility (high density).
  • the state change step S103 the chemical solution is heated/pressurized above the critical point.
  • the removing step S104 is a step of removing the supercritical chemical liquid from the surface of the substrate by the above-described state changing step S103.
  • the substrate processing method of the present embodiment since the chemical solution is removed in a supercritical state, an interface between the liquid and the gas is not formed, and drying can be performed in a state in which surface tension does not act on the pattern. Become.
  • the substrate is tilted to flow the supercritical chemical solution, thereby removing the chemical solution from the surface of the substrate and reducing the pressure to remove the supercritical chemical solution.
  • An operation to vaporize, or the like can be mentioned.
  • the removal step S104 in the present embodiment preferably includes an operation of tilting the substrate to flow the supercritical chemical solution, thereby removing the chemical solution from the surface of the substrate.
  • the substrate processing method of the present embodiment may have arbitrary steps other than the rinse step S101, the chemical replacement step S102, the state change step S103, and the removal step S104.
  • the optional step includes a washing step.
  • the cleaning step is a step of pre-cleaning the surface of the substrate prior to the above-described rinsing step S101.
  • the cleaning method is not particularly limited, and examples of substrate cleaning methods include the known RCA cleaning method.
  • this RCA cleaning method the substrate is first immersed in an SC-1 solution of hydrogen peroxide and ammonium hydroxide to remove fine particles and organic matter from the substrate.
  • the substrate is immersed in a hydrofluoric acid aqueous solution to remove the natural oxide film on the substrate surface.
  • the substrate is immersed in an acidic SC-2 solution of hydrogen peroxide and dilute hydrochloric acid to remove insoluble alkali ions and metal impurities in the SC-1 solution.
  • a chemical solution containing an organic solvent (S1) having a higher specific gravity than water is used, and the chemical solution is brought into a supercritical state to process the substrate.
  • the chemical liquid enters under the rinse liquid, and the rinse liquid on the substrate can be effectively removed. Therefore, the substrate processing method of the present embodiment can remove even a very small amount of rinse liquid remaining on the substrate, and the effect of suppressing pattern collapse is excellent.
  • the chemical solution when a chemical solution having moderately low solubility in water is selected as the chemical solution, the chemical solution hardly absorbs moisture in the air and does not easily involve external impurities, so that the effect of suppressing pattern collapse is improved.
  • the chemical solution does not contain an organic solvent containing fluorine atoms, the cost and environmental load can be further reduced.
  • FIG. 2 shows a flowchart of the substrate processing method of the second embodiment.
  • the substrate processing method of the present embodiment comprises a rinsing step S201 of rinsing the surface of the substrate with a rinse liquid containing water, bringing a chemical solution into contact with the rinsed surface of the substrate in a first chamber, and a chemical solution replacement step S202 in which the liquid adhering to the surface of the substrate is replaced from the rinse solution with the chemical solution; a transfer step of transferring the substrate from the first chamber in which the chemical solution replacement step S202 has been performed to a second chamber; a state changing step S204 of raising the temperature of the substrate wetted with the chemical solution transported into the second chamber to a temperature equal to or higher than the critical temperature of the chemical solution to bring the chemical solution into a supercritical state; is removed from the surface of the substrate, and the chemical solution contains the above-described organic solvent (S1).
  • the rinsing step S201 in this embodiment is the same as the rinsing step S101 described above.
  • the chemical replacement step S202 in this embodiment is the same step as the rinse step S201 described above. However, in this embodiment, at least the chemical replacement step S202 and the state change step S204 are performed in different chambers.
  • the first chamber in which the chemical replacement step S202 is performed is not particularly limited, and examples thereof include a container made of stainless steel.
  • the transfer step S203 is a step of transferring the substrate from the first chamber in which the chemical replacement step S202 is performed to the second chamber in which the state change step S204 is performed.
  • Specific examples of the method of transporting the substrate include a method of transporting the substrate by transport rollers and a method of transporting the substrate by floating it with air. Even in a substrate processing method having a transport step S203 in which moisture in the atmosphere is likely to be absorbed, the chemical solution in the present embodiment can remove even a small amount of rinse solution in the subsequent removal step S205. The effect of suppressing collapse is good.
  • the state change step S204 is the same step as the state change step S104 described above.
  • a high-pressure container made of stainless steel and ensuring a predetermined pressure resistance can be used as the first chamber in which the state change step S204 is performed.
  • the removal step S205 is the same step as the removal step S105 described above.
  • the substrate processing method of the second embodiment may also include an optional step such as the cleaning step described above.
  • the substrate processing method of the present embodiment described above uses the chemical solution containing the organic solvent (S1) described above, even in the substrate processing method having the transfer step S203, the rinsing liquid can be effectively applied. It can be removed, and the effect of suppressing pattern collapse is good. Further, when a chemical solution having moderately low solubility in water is selected as the chemical solution, it is less likely to absorb moisture in the atmosphere and less likely to involve external impurities in the transport step S203. Become.
  • a second aspect of the present invention includes a rinsing step of rinsing the surface of a substrate having an uneven pattern formed on the surface with a rinsing liquid containing water; a chemical solution replacement step of replacing the liquid adhering to the surface of the substrate from the rinsing solution with the chemical solution; and raising the temperature of the substrate wet with the chemical solution to a critical temperature of the chemical solution or higher to bring the chemical solution into a supercritical state.
  • the chemical is an organic solvent having a higher specific gravity than water ( S1) is a chemical liquid containing (however, an organic solvent having a fluorine atom is excluded).
  • the chemical solution of this embodiment includes the same chemical solution as described in the substrate processing method according to the first aspect of the present invention.
  • the chemical solution of this embodiment is a chemical solution useful for use in a supercritical drying method such as the substrate processing method according to the first aspect of the present invention described above.
  • the chemical solution of the present embodiment contains the above-described organic solvent (S1)
  • the chemical solution enters the lower portion of the rinse solution, effectively removing the rinse solution from the substrate. can be removed. Therefore, according to the chemical liquid of the present embodiment, even a very small amount of the rinse liquid remaining on the substrate can be removed, and the effect of suppressing pattern collapse can be improved.
  • the chemical solution has moderately low solubility in water, it is difficult to absorb moisture in the atmosphere, and it is difficult to involve external impurities, so that the effect of suppressing pattern collapse can be further improved.
  • the chemical solution does not contain an organic solvent containing fluorine atoms, the cost and environmental load are further reduced.
  • a third aspect of the present invention is a method of providing a chemical solution, which provides the chemical solution to a process line that executes the substrate processing method according to the first aspect of the present invention.
  • the chemical solution here may be appropriately selected and prepared from the above-described materials (organic solvent (S1), etc.), and the timing of chemical solution preparation may be determined according to the size of the process line and the operating speed. good.
  • the business entity that executes the substrate processing method and the business entity that executes the present providing method do not necessarily have to be the same.
  • the method of providing a chemical solution according to the present embodiment is such that a business entity that executes the above-described substrate processing method provides the chemical solution to a process line that executes the substrate processing method. is the method of providing
  • the chemical solution has a low hygroscopicity of water, but a high removability of water on the substrate, so that the water remains. It is presumed that the state change step of making the chemical liquid into a supercritical state can be performed in a state in which the chemical liquid is not in a state of being immersed. Therefore, it is presumed that the substrate processing method of the present embodiment is effective in suppressing pattern collapse because the substrate surface can be dried without leaving moisture on the substrate surface.

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PCT/JP2022/034953 2021-09-30 2022-09-20 基板の処理方法、薬液及び薬液の提供方法 Ceased WO2023054055A1 (ja)

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US18/695,607 US12593639B2 (en) 2021-09-30 2022-09-20 Method for processing substrate, chemical solution, and method for providing chemical solution
KR1020247009690A KR102908616B1 (ko) 2021-09-30 2022-09-20 기판의 처리 방법, 약액 및 약액의 제공 방법
JP2023551340A JP7766702B2 (ja) 2021-09-30 2022-09-20 基板の処理方法、薬液及び薬液の提供方法

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223467A (ja) * 1999-01-28 2000-08-11 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法および装置
JP2003206497A (ja) * 2002-01-11 2003-07-22 Sony Corp 洗浄及び乾燥方法
JP2003347261A (ja) * 2002-05-30 2003-12-05 Tokyo Electron Ltd 洗浄装置、および洗浄方法
JP2004327894A (ja) * 2003-04-28 2004-11-18 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法及び超臨界乾燥装置
JP2006040969A (ja) * 2004-07-22 2006-02-09 Nippon Telegr & Teleph Corp <Ntt> 超臨界処理方法
JP2007088257A (ja) * 2005-09-22 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板乾燥方法
JP2008130685A (ja) * 2006-11-17 2008-06-05 Sony Corp 微細構造体の処理方法、処理装置、及びその微細構造体
JP2013055230A (ja) * 2011-09-05 2013-03-21 Toshiba Corp 半導体基板の超臨界乾燥方法
JP2013179244A (ja) * 2011-05-30 2013-09-09 Toshiba Corp 基板処理方法、基板処理装置および記憶媒体
JP2017195312A (ja) * 2016-04-21 2017-10-26 ダイキン工業株式会社 半導体基板の基板処理方法及び基板処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6358673B1 (en) 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
JP2008078322A (ja) 2006-09-20 2008-04-03 Sony Corp 半導体ウェーハの処理方法及び処理装置
JP2010074140A (ja) 2008-08-22 2010-04-02 Toshiba Corp 基板処理装置および基板処理方法
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
TWI689004B (zh) 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
JP2015014726A (ja) 2013-07-05 2015-01-22 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP6168128B2 (ja) 2015-11-11 2017-08-02 セントラル硝子株式会社 基板の処理方法及びその方法に用いる溶剤

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223467A (ja) * 1999-01-28 2000-08-11 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法および装置
JP2003206497A (ja) * 2002-01-11 2003-07-22 Sony Corp 洗浄及び乾燥方法
JP2003347261A (ja) * 2002-05-30 2003-12-05 Tokyo Electron Ltd 洗浄装置、および洗浄方法
JP2004327894A (ja) * 2003-04-28 2004-11-18 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法及び超臨界乾燥装置
JP2006040969A (ja) * 2004-07-22 2006-02-09 Nippon Telegr & Teleph Corp <Ntt> 超臨界処理方法
JP2007088257A (ja) * 2005-09-22 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板乾燥方法
JP2008130685A (ja) * 2006-11-17 2008-06-05 Sony Corp 微細構造体の処理方法、処理装置、及びその微細構造体
JP2013179244A (ja) * 2011-05-30 2013-09-09 Toshiba Corp 基板処理方法、基板処理装置および記憶媒体
JP2013055230A (ja) * 2011-09-05 2013-03-21 Toshiba Corp 半導体基板の超臨界乾燥方法
JP2017195312A (ja) * 2016-04-21 2017-10-26 ダイキン工業株式会社 半導体基板の基板処理方法及び基板処理装置

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