JP7766702B2 - 基板の処理方法、薬液及び薬液の提供方法 - Google Patents
基板の処理方法、薬液及び薬液の提供方法Info
- Publication number
- JP7766702B2 JP7766702B2 JP2023551340A JP2023551340A JP7766702B2 JP 7766702 B2 JP7766702 B2 JP 7766702B2 JP 2023551340 A JP2023551340 A JP 2023551340A JP 2023551340 A JP2023551340 A JP 2023551340A JP 7766702 B2 JP7766702 B2 JP 7766702B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chemical solution
- chemical
- liquid
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/80—Cleaning only by supercritical fluids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163250239P | 2021-09-30 | 2021-09-30 | |
| US63/250,239 | 2021-09-30 | ||
| PCT/JP2022/034953 WO2023054055A1 (ja) | 2021-09-30 | 2022-09-20 | 基板の処理方法、薬液及び薬液の提供方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023054055A1 JPWO2023054055A1 (https=) | 2023-04-06 |
| JPWO2023054055A5 JPWO2023054055A5 (https=) | 2024-06-05 |
| JP7766702B2 true JP7766702B2 (ja) | 2025-11-10 |
Family
ID=85782532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023551340A Active JP7766702B2 (ja) | 2021-09-30 | 2022-09-20 | 基板の処理方法、薬液及び薬液の提供方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12593639B2 (https=) |
| JP (1) | JP7766702B2 (https=) |
| KR (1) | KR102908616B1 (https=) |
| TW (1) | TW202323512A (https=) |
| WO (1) | WO2023054055A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7776349B2 (ja) * | 2022-02-28 | 2025-11-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理システム |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223467A (ja) | 1999-01-28 | 2000-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界乾燥方法および装置 |
| JP2003206497A (ja) | 2002-01-11 | 2003-07-22 | Sony Corp | 洗浄及び乾燥方法 |
| JP2003347261A (ja) | 2002-05-30 | 2003-12-05 | Tokyo Electron Ltd | 洗浄装置、および洗浄方法 |
| JP2004327894A (ja) | 2003-04-28 | 2004-11-18 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界乾燥方法及び超臨界乾燥装置 |
| JP2006040969A (ja) | 2004-07-22 | 2006-02-09 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界処理方法 |
| JP2007088257A (ja) | 2005-09-22 | 2007-04-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板乾燥方法 |
| JP2008078322A (ja) | 2006-09-20 | 2008-04-03 | Sony Corp | 半導体ウェーハの処理方法及び処理装置 |
| JP2010074140A (ja) | 2008-08-22 | 2010-04-02 | Toshiba Corp | 基板処理装置および基板処理方法 |
| JP2013055230A (ja) | 2011-09-05 | 2013-03-21 | Toshiba Corp | 半導体基板の超臨界乾燥方法 |
| JP2013179244A (ja) | 2011-05-30 | 2013-09-09 | Toshiba Corp | 基板処理方法、基板処理装置および記憶媒体 |
| WO2015002250A1 (ja) | 2013-07-05 | 2015-01-08 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法及び電子デバイス |
| JP2016503588A (ja) | 2012-11-26 | 2016-02-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理 |
| JP2017195312A (ja) | 2016-04-21 | 2017-10-26 | ダイキン工業株式会社 | 半導体基板の基板処理方法及び基板処理装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358673B1 (en) | 1998-09-09 | 2002-03-19 | Nippon Telegraph And Telephone Corporation | Pattern formation method and apparatus |
| JP2008130685A (ja) | 2006-11-17 | 2008-06-05 | Sony Corp | 微細構造体の処理方法、処理装置、及びその微細構造体 |
| WO2010091045A2 (en) | 2009-02-05 | 2010-08-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of polymers and other organic material from a surface |
| WO2012165377A1 (ja) | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
| JP6168128B2 (ja) | 2015-11-11 | 2017-08-02 | セントラル硝子株式会社 | 基板の処理方法及びその方法に用いる溶剤 |
-
2022
- 2022-09-20 KR KR1020247009690A patent/KR102908616B1/ko active Active
- 2022-09-20 US US18/695,607 patent/US12593639B2/en active Active
- 2022-09-20 WO PCT/JP2022/034953 patent/WO2023054055A1/ja not_active Ceased
- 2022-09-20 JP JP2023551340A patent/JP7766702B2/ja active Active
- 2022-09-26 TW TW111136299A patent/TW202323512A/zh unknown
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223467A (ja) | 1999-01-28 | 2000-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界乾燥方法および装置 |
| JP2003206497A (ja) | 2002-01-11 | 2003-07-22 | Sony Corp | 洗浄及び乾燥方法 |
| JP2003347261A (ja) | 2002-05-30 | 2003-12-05 | Tokyo Electron Ltd | 洗浄装置、および洗浄方法 |
| JP2004327894A (ja) | 2003-04-28 | 2004-11-18 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界乾燥方法及び超臨界乾燥装置 |
| JP2006040969A (ja) | 2004-07-22 | 2006-02-09 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界処理方法 |
| JP2007088257A (ja) | 2005-09-22 | 2007-04-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板乾燥方法 |
| JP2008078322A (ja) | 2006-09-20 | 2008-04-03 | Sony Corp | 半導体ウェーハの処理方法及び処理装置 |
| JP2010074140A (ja) | 2008-08-22 | 2010-04-02 | Toshiba Corp | 基板処理装置および基板処理方法 |
| JP2013179244A (ja) | 2011-05-30 | 2013-09-09 | Toshiba Corp | 基板処理方法、基板処理装置および記憶媒体 |
| JP2013055230A (ja) | 2011-09-05 | 2013-03-21 | Toshiba Corp | 半導体基板の超臨界乾燥方法 |
| JP2016503588A (ja) | 2012-11-26 | 2016-02-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理 |
| WO2015002250A1 (ja) | 2013-07-05 | 2015-01-08 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法及び電子デバイス |
| JP2017195312A (ja) | 2016-04-21 | 2017-10-26 | ダイキン工業株式会社 | 半導体基板の基板処理方法及び基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023054055A1 (https=) | 2023-04-06 |
| KR20240046604A (ko) | 2024-04-09 |
| US20240395538A1 (en) | 2024-11-28 |
| WO2023054055A1 (ja) | 2023-04-06 |
| US12593639B2 (en) | 2026-03-31 |
| TW202323512A (zh) | 2023-06-16 |
| KR102908616B1 (ko) | 2026-01-06 |
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