KR102800934B1 - 약액 내성 보호막 - Google Patents

약액 내성 보호막 Download PDF

Info

Publication number
KR102800934B1
KR102800934B1 KR1020227037898A KR20227037898A KR102800934B1 KR 102800934 B1 KR102800934 B1 KR 102800934B1 KR 1020227037898 A KR1020227037898 A KR 1020227037898A KR 20227037898 A KR20227037898 A KR 20227037898A KR 102800934 B1 KR102800934 B1 KR 102800934B1
Authority
KR
South Korea
Prior art keywords
group
protective film
forming
methyl
wet etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227037898A
Other languages
English (en)
Korean (ko)
Other versions
KR20220162755A (ko
Inventor
유토 하시모토
토키오 니시타
유키 엔도
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20220162755A publication Critical patent/KR20220162755A/ko
Application granted granted Critical
Publication of KR102800934B1 publication Critical patent/KR102800934B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04—Epoxynovolacs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H01L21/02057—
    • H01L21/30604—
    • H01L21/3081—
    • H01L21/3086—
    • H01L21/31111—
    • H01L21/31144—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Epoxy Resins (AREA)
KR1020227037898A 2020-03-30 2021-03-29 약액 내성 보호막 Active KR102800934B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-060092 2020-03-30
JP2020060092 2020-03-30
PCT/JP2021/013164 WO2021200769A1 (ja) 2020-03-30 2021-03-29 薬液耐性保護膜

Publications (2)

Publication Number Publication Date
KR20220162755A KR20220162755A (ko) 2022-12-08
KR102800934B1 true KR102800934B1 (ko) 2025-04-29

Family

ID=77927294

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227037898A Active KR102800934B1 (ko) 2020-03-30 2021-03-29 약액 내성 보호막

Country Status (5)

Country Link
US (1) US12424441B2 (https=)
JP (2) JP7740232B2 (https=)
KR (1) KR102800934B1 (https=)
CN (1) CN115280241A (https=)
WO (1) WO2021200769A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022054853A1 (ja) * 2020-09-10 2022-03-17 日産化学株式会社 薬液耐性保護膜

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008026600A (ja) 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2008039811A (ja) * 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
WO2018203464A1 (ja) 2017-05-02 2018-11-08 日産化学株式会社 過酸化水素水溶液に対する保護膜形成組成物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169672A (ja) * 1998-12-09 2000-06-20 Nippon Kayaku Co Ltd プリント配線板用熱硬化性固体状樹脂組成物
CN101550265B (zh) * 2003-04-02 2014-04-16 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
JP4575220B2 (ja) 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
US8192642B2 (en) 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
JP4993139B2 (ja) 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
US8993215B2 (en) * 2012-03-27 2015-03-31 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing phenylindole-containing novolac resin
EP3040777B1 (en) * 2013-08-28 2018-03-14 Nissan Chemical Industries, Ltd. Pattern forming method using resist underlayer film
US11815815B2 (en) * 2014-11-19 2023-11-14 Nissan Chemical Industries, Ltd. Composition for forming silicon-containing resist underlayer film removable by wet process
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
TWI662370B (zh) 2015-11-30 2019-06-11 Rohm And Haas Electronic Materials Korea Ltd. 與外塗佈光致抗蝕劑一起使用之塗料組合物
US11262656B2 (en) 2016-03-31 2022-03-01 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
JP7486919B2 (ja) * 2016-05-02 2024-05-20 日産化学株式会社 特定の架橋剤を含む保護膜形成組成物及びそれを用いたパターン形成方法
WO2018052130A1 (ja) 2016-09-16 2018-03-22 日産化学工業株式会社 保護膜形成組成物
JP6718406B2 (ja) * 2017-03-31 2020-07-08 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
JP6853716B2 (ja) * 2017-03-31 2021-03-31 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
US11086220B2 (en) 2017-10-31 2021-08-10 Rohm And Haas Electronic Materials Korea Ltd. Underlayer coating compositions for use with photoresists
CN111492311B (zh) * 2017-12-22 2024-11-08 日产化学株式会社 具有缩醛结构的保护膜形成用组合物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008026600A (ja) 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2008039811A (ja) * 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
WO2018203464A1 (ja) 2017-05-02 2018-11-08 日産化学株式会社 過酸化水素水溶液に対する保護膜形成組成物

Also Published As

Publication number Publication date
WO2021200769A1 (ja) 2021-10-07
JP2025143442A (ja) 2025-10-01
US12424441B2 (en) 2025-09-23
JP7740232B2 (ja) 2025-09-17
US20230114358A1 (en) 2023-04-13
KR20220162755A (ko) 2022-12-08
TW202202942A (zh) 2022-01-16
CN115280241A (zh) 2022-11-01
JPWO2021200769A1 (https=) 2021-10-07

Similar Documents

Publication Publication Date Title
US9469777B2 (en) Resist underlayer film forming composition that contains novolac resin having polynuclear phenol
JP6652747B2 (ja) アリーレン基を有するポリマーを含むレジスト下層膜形成組成物
CN106164774B (zh) 含有包含丙烯酰胺结构和丙烯酸酯结构的聚合物的光刻用抗蚀剂下层膜形成用组合物
TWI817950B (zh) 阻劑下層膜形成組成物、阻劑下層膜、阻劑圖型之形成方法及半導體裝置之製造方法
CN116057103B (zh) 药液耐性保护膜
JP2025143442A (ja) 薬液耐性保護膜
US20250034427A1 (en) Chemical-resistant protective film-forming composition having catechol group
TWI921328B (zh) 半導體裝置的製造方法
WO2023100506A1 (ja) ヒドロキシケイ皮酸誘導体を有するレジスト下層膜形成用組成物
KR20240051144A (ko) 레지스트 하층막 형성 조성물
JP7275676B2 (ja) レジスト下層膜形成組成物
TW202613243A (zh) 半導體裝置的製造方法
KR102826591B1 (ko) Euv레지스트 하층막 형성 조성물
TWI834841B (zh) 阻劑下層膜形成組成物
KR20250166879A (ko) 레지스트 하층막 형성용 조성물
KR20250107863A (ko) 쿠르쿠민 유도체를 갖는 레지스트 하층막 형성용 조성물
CN118215886A (zh) 含有烷氧基的抗蚀剂下层膜形成用组合物
TW202544102A (zh) 光阻下層膜形成用組成物、光阻下層膜、光阻圖案之形成方法、及半導體裝置之製造方法
TW202535994A (zh) 光阻下層膜形成用組成物
CN118369618A (zh) 具有糖精骨架的抗蚀剂下层膜形成用组合物
WO2023084961A1 (ja) 薬液耐性保護膜

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000