CN115280241A - 药液耐性保护膜 - Google Patents

药液耐性保护膜 Download PDF

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Publication number
CN115280241A
CN115280241A CN202180021035.1A CN202180021035A CN115280241A CN 115280241 A CN115280241 A CN 115280241A CN 202180021035 A CN202180021035 A CN 202180021035A CN 115280241 A CN115280241 A CN 115280241A
Authority
CN
China
Prior art keywords
protective film
group
forming
composition
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180021035.1A
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English (en)
Chinese (zh)
Inventor
桥本雄人
西田登喜雄
远藤勇树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN115280241A publication Critical patent/CN115280241A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04—Epoxynovolacs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Epoxy Resins (AREA)
CN202180021035.1A 2020-03-30 2021-03-29 药液耐性保护膜 Pending CN115280241A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-060092 2020-03-30
JP2020060092 2020-03-30
PCT/JP2021/013164 WO2021200769A1 (ja) 2020-03-30 2021-03-29 薬液耐性保護膜

Publications (1)

Publication Number Publication Date
CN115280241A true CN115280241A (zh) 2022-11-01

Family

ID=77927294

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180021035.1A Pending CN115280241A (zh) 2020-03-30 2021-03-29 药液耐性保护膜

Country Status (5)

Country Link
US (1) US12424441B2 (https=)
JP (2) JP7740232B2 (https=)
KR (1) KR102800934B1 (https=)
CN (1) CN115280241A (https=)
WO (1) WO2021200769A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022054853A1 (ja) * 2020-09-10 2022-03-17 日産化学株式会社 薬液耐性保護膜

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169672A (ja) * 1998-12-09 2000-06-20 Nippon Kayaku Co Ltd プリント配線板用熱硬化性固体状樹脂組成物
CN1768306A (zh) * 2003-04-02 2006-05-03 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
JP2008026600A (ja) * 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2008039811A (ja) * 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
CN104185816A (zh) * 2012-03-27 2014-12-03 日产化学工业株式会社 含有含苯基吲哚的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
CN105492973A (zh) * 2013-08-28 2016-04-13 日产化学工业株式会社 应用了抗蚀剂下层膜的图案形成方法
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
CN108693705A (zh) * 2017-03-31 2018-10-23 信越化学工业株式会社 抗蚀剂下层膜材料、图案形成方法、及抗蚀剂下层膜形成方法
CN108693713A (zh) * 2017-03-31 2018-10-23 信越化学工业株式会社 抗蚀剂下层膜材料、图案形成方法、及抗蚀剂下层膜形成方法
CN109073978A (zh) * 2016-05-02 2018-12-21 日产化学株式会社 包含特定交联剂的保护膜形成用组合物及使用了该组合物的图案形成方法
TW201938604A (zh) * 2017-12-22 2019-10-01 日商日產化學股份有限公司 具有縮醛結構之保護膜形成組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4575220B2 (ja) 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US8192642B2 (en) 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
JP4993139B2 (ja) 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
TWI662370B (zh) 2015-11-30 2019-06-11 Rohm And Haas Electronic Materials Korea Ltd. 與外塗佈光致抗蝕劑一起使用之塗料組合物
US11262656B2 (en) 2016-03-31 2022-03-01 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
WO2018052130A1 (ja) 2016-09-16 2018-03-22 日産化学工業株式会社 保護膜形成組成物
CN110582728B (zh) 2017-05-02 2023-11-17 日产化学株式会社 耐受过氧化氢水溶液的保护膜形成用组合物
US11086220B2 (en) 2017-10-31 2021-08-10 Rohm And Haas Electronic Materials Korea Ltd. Underlayer coating compositions for use with photoresists

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169672A (ja) * 1998-12-09 2000-06-20 Nippon Kayaku Co Ltd プリント配線板用熱硬化性固体状樹脂組成物
CN1768306A (zh) * 2003-04-02 2006-05-03 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
JP2008026600A (ja) * 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2008039811A (ja) * 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
CN104185816A (zh) * 2012-03-27 2014-12-03 日产化学工业株式会社 含有含苯基吲哚的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
CN105492973A (zh) * 2013-08-28 2016-04-13 日产化学工业株式会社 应用了抗蚀剂下层膜的图案形成方法
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
CN109073978A (zh) * 2016-05-02 2018-12-21 日产化学株式会社 包含特定交联剂的保护膜形成用组合物及使用了该组合物的图案形成方法
CN108693705A (zh) * 2017-03-31 2018-10-23 信越化学工业株式会社 抗蚀剂下层膜材料、图案形成方法、及抗蚀剂下层膜形成方法
CN108693713A (zh) * 2017-03-31 2018-10-23 信越化学工业株式会社 抗蚀剂下层膜材料、图案形成方法、及抗蚀剂下层膜形成方法
TW201938604A (zh) * 2017-12-22 2019-10-01 日商日產化學股份有限公司 具有縮醛結構之保護膜形成組成物

Also Published As

Publication number Publication date
WO2021200769A1 (ja) 2021-10-07
JP2025143442A (ja) 2025-10-01
US12424441B2 (en) 2025-09-23
KR102800934B1 (ko) 2025-04-29
JP7740232B2 (ja) 2025-09-17
US20230114358A1 (en) 2023-04-13
KR20220162755A (ko) 2022-12-08
TW202202942A (zh) 2022-01-16
JPWO2021200769A1 (https=) 2021-10-07

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