JP7740232B2 - 薬液耐性保護膜 - Google Patents

薬液耐性保護膜

Info

Publication number
JP7740232B2
JP7740232B2 JP2022512172A JP2022512172A JP7740232B2 JP 7740232 B2 JP7740232 B2 JP 7740232B2 JP 2022512172 A JP2022512172 A JP 2022512172A JP 2022512172 A JP2022512172 A JP 2022512172A JP 7740232 B2 JP7740232 B2 JP 7740232B2
Authority
JP
Japan
Prior art keywords
group
protective film
methyl
semiconductor
butoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022512172A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021200769A1 (https=
Inventor
雄人 橋本
登喜雄 西田
勇樹 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of JPWO2021200769A1 publication Critical patent/JPWO2021200769A1/ja
Priority to JP2025114361A priority Critical patent/JP2025143442A/ja
Application granted granted Critical
Publication of JP7740232B2 publication Critical patent/JP7740232B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04—Epoxynovolacs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Epoxy Resins (AREA)
JP2022512172A 2020-03-30 2021-03-29 薬液耐性保護膜 Active JP7740232B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025114361A JP2025143442A (ja) 2020-03-30 2025-07-07 薬液耐性保護膜

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060092 2020-03-30
JP2020060092 2020-03-30
PCT/JP2021/013164 WO2021200769A1 (ja) 2020-03-30 2021-03-29 薬液耐性保護膜

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025114361A Division JP2025143442A (ja) 2020-03-30 2025-07-07 薬液耐性保護膜

Publications (2)

Publication Number Publication Date
JPWO2021200769A1 JPWO2021200769A1 (https=) 2021-10-07
JP7740232B2 true JP7740232B2 (ja) 2025-09-17

Family

ID=77927294

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022512172A Active JP7740232B2 (ja) 2020-03-30 2021-03-29 薬液耐性保護膜
JP2025114361A Pending JP2025143442A (ja) 2020-03-30 2025-07-07 薬液耐性保護膜

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025114361A Pending JP2025143442A (ja) 2020-03-30 2025-07-07 薬液耐性保護膜

Country Status (5)

Country Link
US (1) US12424441B2 (https=)
JP (2) JP7740232B2 (https=)
KR (1) KR102800934B1 (https=)
CN (1) CN115280241A (https=)
WO (1) WO2021200769A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022054853A1 (ja) * 2020-09-10 2022-03-17 日産化学株式会社 薬液耐性保護膜

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006293207A (ja) 2005-04-14 2006-10-26 Shin Etsu Chem Co Ltd レジスト下層膜材料およびパターン形成方法
JP2008026600A (ja) 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2008039811A (ja) 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
JP2009098639A (ja) 2007-09-28 2009-05-07 Shin Etsu Chem Co Ltd 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP2010539288A (ja) 2007-09-13 2010-12-16 ブルーワー サイエンス アイ エヌ シー． マイクロエレクトロニクス基板のウェットエッチング処理のためのスピンオン保護被膜
JP2017187764A (ja) 2016-03-31 2017-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
WO2018203464A1 (ja) 2017-05-02 2018-11-08 日産化学株式会社 過酸化水素水溶液に対する保護膜形成組成物
JP2019082681A (ja) 2017-10-31 2019-05-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド フォトレジストと共に使用するための下層コーティング組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169672A (ja) * 1998-12-09 2000-06-20 Nippon Kayaku Co Ltd プリント配線板用熱硬化性固体状樹脂組成物
CN101550265B (zh) * 2003-04-02 2014-04-16 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
US8993215B2 (en) * 2012-03-27 2015-03-31 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing phenylindole-containing novolac resin
EP3040777B1 (en) * 2013-08-28 2018-03-14 Nissan Chemical Industries, Ltd. Pattern forming method using resist underlayer film
US11815815B2 (en) * 2014-11-19 2023-11-14 Nissan Chemical Industries, Ltd. Composition for forming silicon-containing resist underlayer film removable by wet process
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
TWI662370B (zh) 2015-11-30 2019-06-11 Rohm And Haas Electronic Materials Korea Ltd. 與外塗佈光致抗蝕劑一起使用之塗料組合物
JP7486919B2 (ja) * 2016-05-02 2024-05-20 日産化学株式会社 特定の架橋剤を含む保護膜形成組成物及びそれを用いたパターン形成方法
WO2018052130A1 (ja) 2016-09-16 2018-03-22 日産化学工業株式会社 保護膜形成組成物
JP6718406B2 (ja) * 2017-03-31 2020-07-08 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
JP6853716B2 (ja) * 2017-03-31 2021-03-31 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
CN111492311B (zh) * 2017-12-22 2024-11-08 日产化学株式会社 具有缩醛结构的保护膜形成用组合物

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006293207A (ja) 2005-04-14 2006-10-26 Shin Etsu Chem Co Ltd レジスト下層膜材料およびパターン形成方法
JP2008026600A (ja) 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2008039811A (ja) 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
JP2010539288A (ja) 2007-09-13 2010-12-16 ブルーワー サイエンス アイ エヌ シー． マイクロエレクトロニクス基板のウェットエッチング処理のためのスピンオン保護被膜
JP2009098639A (ja) 2007-09-28 2009-05-07 Shin Etsu Chem Co Ltd 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP2017187764A (ja) 2016-03-31 2017-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
WO2018203464A1 (ja) 2017-05-02 2018-11-08 日産化学株式会社 過酸化水素水溶液に対する保護膜形成組成物
JP2019082681A (ja) 2017-10-31 2019-05-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド フォトレジストと共に使用するための下層コーティング組成物

Also Published As

Publication number Publication date
WO2021200769A1 (ja) 2021-10-07
JP2025143442A (ja) 2025-10-01
US12424441B2 (en) 2025-09-23
KR102800934B1 (ko) 2025-04-29
US20230114358A1 (en) 2023-04-13
KR20220162755A (ko) 2022-12-08
TW202202942A (zh) 2022-01-16
CN115280241A (zh) 2022-11-01
JPWO2021200769A1 (https=) 2021-10-07

Similar Documents

Publication Publication Date Title
KR101915138B1 (ko) Euv 리소그래피용 레지스트 상층막 형성 조성물
KR20150052861A (ko) 리소그래피용 레지스트 상층막 형성 조성물 및 이를 이용한 반도체 장치의 제조방법
JP7622779B2 (ja) 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物
JP2025143442A (ja) 薬液耐性保護膜
CN109791376B (zh) 使用了溶剂置换法的抗蚀剂图案涂布用组合物的制造方法
JP7841430B2 (ja) 薬液耐性保護膜
CN116249729A (zh) 包含已封端的反应产物的抗蚀剂下层膜形成用组合物
WO2022202644A1 (ja) 保護された塩基性の有機基を有するレジスト下層膜形成組成物
TWI921328B (zh) 半導體裝置的製造方法
TWI885249B (zh) 含萘單元之阻劑下層膜形成組成物、經圖型化之基板之製造方法、半導體裝置之製造方法
KR102826591B1 (ko) Euv레지스트 하층막 형성 조성물
TW202613243A (zh) 半導體裝置的製造方法
WO2024204163A1 (ja) レジスト下層膜形成用組成物
CN118251753A (zh) 耐化学药液保护膜
TW202542650A (zh) 阻劑下層膜形成用組成物及阻劑下層膜
WO2023120616A1 (ja) サッカリン骨格を有するレジスト下層膜形成用組成物
WO2025142781A1 (ja) レジスト下層膜形成用組成物
WO2023085295A1 (ja) アルコキシ基含有レジスト下層膜形成用組成物
WO2022163602A1 (ja) 脂環式炭化水素基を有するポリマーを含むレジスト下層膜形成組成物

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250312

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250603

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250707

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250805

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250818

R150 Certificate of patent or registration of utility model

Ref document number: 7740232

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150