KR102791017B1 - 리드 프레임 및 그 제조 방법 - Google Patents

리드 프레임 및 그 제조 방법 Download PDF

Info

Publication number
KR102791017B1
KR102791017B1 KR1020237029193A KR20237029193A KR102791017B1 KR 102791017 B1 KR102791017 B1 KR 102791017B1 KR 1020237029193 A KR1020237029193 A KR 1020237029193A KR 20237029193 A KR20237029193 A KR 20237029193A KR 102791017 B1 KR102791017 B1 KR 102791017B1
Authority
KR
South Korea
Prior art keywords
lead
die pad
lead frame
lead portion
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237029193A
Other languages
English (en)
Korean (ko)
Other versions
KR20240051069A (ko
Inventor
마사히로 나가타
가즈히로 시노자키
마사히로 야마다
다이스케 오쿠야마
지아키 하츠타
겐타로오 세키
히데토 마츠이
가즈노리 오오우치
Original Assignee
다이니폰 인사츠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이니폰 인사츠 가부시키가이샤 filed Critical 다이니폰 인사츠 가부시키가이샤
Priority to KR1020257010489A priority Critical patent/KR102866060B1/ko
Publication of KR20240051069A publication Critical patent/KR20240051069A/ko
Application granted granted Critical
Publication of KR102791017B1 publication Critical patent/KR102791017B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H01L23/49548—
    • H01L21/4828—
    • H01L21/56—
    • H01L21/60—
    • H01L23/3107—
    • H01L23/49503—
    • H01L23/49582—
    • H01L23/564—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/453—Leadframes comprising flexible metallic tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • ing And Chemical Polishing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1020237029193A 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법 Active KR102791017B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257010489A KR102866060B1 (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2021144291 2021-09-03
JPJP-P-2021-144288 2021-09-03
JP2021144288 2021-09-03
JPJP-P-2021-144291 2021-09-03
JPJP-P-2021-185144 2021-11-12
JP2021185144 2021-11-12
JP2021185138 2021-11-12
JPJP-P-2021-185138 2021-11-12
JP2022058471 2022-03-31
JPJP-P-2022-058471 2022-03-31
PCT/JP2022/033037 WO2023033126A1 (ja) 2021-09-03 2022-09-01 リードフレーム及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257010489A Division KR102866060B1 (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20240051069A KR20240051069A (ko) 2024-04-19
KR102791017B1 true KR102791017B1 (ko) 2025-04-07

Family

ID=85412430

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020237029193A Active KR102791017B1 (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법
KR1020257010489A Active KR102866060B1 (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법
KR1020257032099A Pending KR20250145132A (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020257010489A Active KR102866060B1 (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법
KR1020257032099A Pending KR20250145132A (ko) 2021-09-03 2022-09-01 리드 프레임 및 그 제조 방법

Country Status (6)

Country Link
US (4) US20240145356A1 (https=)
JP (6) JP7343084B2 (https=)
KR (3) KR102791017B1 (https=)
CN (1) CN119050084A (https=)
TW (2) TW202435373A (https=)
WO (1) WO2023033126A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023033126A1 (ja) 2021-09-03 2023-03-09 大日本印刷株式会社 リードフレーム及びその製造方法
JP2024101669A (ja) * 2023-01-18 2024-07-30 株式会社三井ハイテック 金属部品
JP7413626B1 (ja) 2023-05-02 2024-01-16 長華科技股▲ふん▼有限公司 リードフレーム及びその製造方法
TWI854666B (zh) * 2023-05-24 2024-09-01 群創光電股份有限公司 封裝晶片及包括其的背光模組
CN120917185A (zh) * 2023-06-16 2025-11-07 古河电气工业株式会社 导线架材料及其制造方法、以及半导体封装体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090039486A1 (en) * 2005-04-26 2009-02-12 Yo Shimazaki Circuit member, manufacturing method for circuit members, semiconductor device, and surface lamination structure for circuit member
JP2020167207A (ja) 2019-03-28 2020-10-08 大口マテリアル株式会社 半導体素子搭載用部品、リードフレーム及び半導体素子搭載用基板

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135586A (ja) * 1996-10-31 1998-05-22 Kyocera Corp フリップチップ実装用回路基板及びその製造法
JP4357728B2 (ja) 2000-09-29 2009-11-04 大日本印刷株式会社 樹脂封止型半導体装置
US20040080025A1 (en) * 2002-09-17 2004-04-29 Shinko Electric Industries Co., Ltd. Lead frame, method of manufacturing the same, and semiconductor device manufactured with the same
US7049683B1 (en) * 2003-07-19 2006-05-23 Ns Electronics Bangkok (1993) Ltd. Semiconductor package including organo-metallic coating formed on surface of leadframe roughened using chemical etchant to prevent separation between leadframe and molding compound
JP4301068B2 (ja) 2004-01-09 2009-07-22 株式会社デンソー 樹脂封止型半導体装置およびその製造方法
JP2007287765A (ja) * 2006-04-13 2007-11-01 Denso Corp 樹脂封止型半導体装置
EP2573208A4 (en) * 2010-05-20 2014-05-21 Jx Metals Trading Co Ltd ELECTROLYTIC SILVER PLATED AND / OR ELECTROLYTIC SILVER ALLOY PLATED ARTICLES WITH AN OXID SURFACE LAYER
TW201250964A (en) * 2011-01-27 2012-12-16 Dainippon Printing Co Ltd Resin-attached lead frame, method for manufacturing same, and lead frame
JP5813335B2 (ja) * 2011-02-08 2015-11-17 新光電気工業株式会社 リードフレーム、半導体装置、リードフレームの製造方法及び半導体装置の製造方法
TWI522244B (zh) * 2012-02-13 2016-02-21 群康科技(深圳)有限公司 電子裝置及其積層結構及積層結構的製造方法
US20140048934A1 (en) * 2012-08-15 2014-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method to control underfill fillet width
JP6493952B2 (ja) * 2014-08-26 2019-04-03 大口マテリアル株式会社 リードフレーム及びその製造方法
JP2017022267A (ja) * 2015-07-10 2017-01-26 Ｓｈマテリアル株式会社 リードフレームの製造方法
JP6603538B2 (ja) 2015-10-23 2019-11-06 新光電気工業株式会社 リードフレーム及びその製造方法
JP6685112B2 (ja) 2015-11-18 2020-04-22 株式会社三井ハイテック リードフレーム及びリードフレームパッケージ、並びにこれらの製造方法
TWI637470B (zh) * 2016-04-19 2018-10-01 Kabushiki Kaisha Toshiba 半導體封裝及其之製造方法
JP6269887B2 (ja) * 2017-06-29 2018-01-31 大日本印刷株式会社 半導体装置の製造方法、およびリードフレームの製造方法
JP2019040994A (ja) 2017-08-25 2019-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6733941B1 (ja) * 2019-03-22 2020-08-05 大口マテリアル株式会社 半導体素子搭載用基板
CN115244684B (zh) * 2020-03-11 2026-01-16 罗姆股份有限公司 半导体器件
DE112021000169B4 (de) * 2020-06-30 2025-08-28 Fuji Electric Co., Ltd. Halbleitermodul und verfahren zum herstellen eines halbleitermoduls
CN112133640B (zh) 2020-11-24 2021-02-09 宁波康强电子股份有限公司 一种具有粗糙侧壁的引线框架的制备方法
WO2023033126A1 (ja) 2021-09-03 2023-03-09 大日本印刷株式会社 リードフレーム及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090039486A1 (en) * 2005-04-26 2009-02-12 Yo Shimazaki Circuit member, manufacturing method for circuit members, semiconductor device, and surface lamination structure for circuit member
JP2020167207A (ja) 2019-03-28 2020-10-08 大口マテリアル株式会社 半導体素子搭載用部品、リードフレーム及び半導体素子搭載用基板

Also Published As

Publication number Publication date
JP2024105666A (ja) 2024-08-06
JP2024029078A (ja) 2024-03-05
JP2024123171A (ja) 2024-09-10
KR20250049450A (ko) 2025-04-11
JPWO2023033126A1 (https=) 2023-03-09
JP2023134601A (ja) 2023-09-27
KR102866060B1 (ko) 2025-09-30
JP7584025B2 (ja) 2024-11-15
KR20240051069A (ko) 2024-04-19
US20240030114A1 (en) 2024-01-25
JP7414181B2 (ja) 2024-01-16
US12243811B2 (en) 2025-03-04
TW202435373A (zh) 2024-09-01
JP7584026B2 (ja) 2024-11-15
US20240145356A1 (en) 2024-05-02
CN119050084A (zh) 2024-11-29
TW202320243A (zh) 2023-05-16
TWI846042B (zh) 2024-06-21
JP2025016682A (ja) 2025-02-04
WO2023033126A1 (ja) 2023-03-09
JP7540579B2 (ja) 2024-08-27
US20250174530A1 (en) 2025-05-29
US12381136B2 (en) 2025-08-05
JP7343084B2 (ja) 2023-09-12
KR20250145132A (ko) 2025-10-13
US20240404928A1 (en) 2024-12-05

Similar Documents

Publication Publication Date Title
KR102791017B1 (ko) 리드 프레임 및 그 제조 방법
JP3169919B2 (ja) ボールグリッドアレイ型半導体装置及びその製造方法
US9431273B2 (en) Method for manufacturing a resin-encapsulated semiconductor device
US10043721B2 (en) Method of manufacturing semiconductor device having semiconductor chip mounted on lead frame
JP2005057067A (ja) 半導体装置およびその製造方法
JP2009076658A (ja) 半導体装置及びその製造方法
JP2008187045A (ja) 半導体装置用リードフレームとその製造方法、半導体装置
JP2021150638A (ja) リードフレーム、リードフレームの製造方法及び半導体装置の製造方法
JP4091050B2 (ja) 半導体装置の製造方法
CN116941034A (zh) 引线框及其制造方法
JPH08116012A (ja) 放熱板とそれを用いたリードフレーム部材及び樹脂封止型半導体装置、および放熱板の製造方法
JP7380750B2 (ja) リードフレームおよび半導体装置
JP2018137315A (ja) リードフレームおよび半導体装置
JP6436202B2 (ja) リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
JP2023174472A (ja) リードフレーム及びその製造方法
JP2002343920A (ja) リードフレーム
JP2021158211A (ja) リードフレーム及びその製造方法、並びに半導体装置及びその製造方法
JP2005236127A (ja) 半導体装置およびその製造方法
JP2001308248A (ja) Ｂｃｃ用リードフレーム

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000